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Cyclotron mass of correlated two-dimensional electron GAS systems in GaAs

Zyklonmasse von korrelierten zweidimensionalen Elektronengassystemen
: Manger, M.; Batke, E.; Köhler, K.; Ganser, P.

Gershoni, D.:
24th International Conference on the Physics of Semiconductors 1998. Proceedings
Singapore: World Scientific, 1999
ISBN: 981-02-3613-1
4 pp. : Ill., Lit.
International Conference on the Physics of Semiconductors <24, 1998, Jerusalem>
Conference Paper
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; Quantenfilm; quantum wells; electrical measurement; elektrische Messung

The cyclotron mass of a high-density electron inversion layer in GaAs was investigated at a lattice temperature of 0.4 K. A novel mass minimum is observed in the metallic regime at a filling factor of about 2.3 providing strong evidence that electron correlations influence the cyclotron resonance.