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1999
Journal Article
Titel
In(x)Ga(1-x)N/GaN band offsets as inferred from the deep, yellow-red emission band in In(x)Ga(1-x)N
Alternative
In(x)Ga(1-x)N/GaN Band Offset Bestimmung über die tiefe, gelb-rote Emissionsbande in In(x)Ga(1-x)N
Abstract
The deep, yellow photoluminescence band well known in GaN has been studied in In(x)Ga(1-x)N (x<=0.14) grown pseudomorphically on GaN. The peak energy E(p) of the band is found to shift gradually to the red with increasing x according to E(p) = 2.20- 2.02x (eV). As in the case of GaN, the deep band in In(x)Ga(1-x)N is assigned to shallow donor-deep acceptor pair recombination. The data show that the deep acceptor level does not follow the valence band edge. It is therefore assumed to be pinned to a reference level common to GaN and In(x)Ga(1-x)N. The band offsets between GaN and strained In(x)Ga(1-x)N evaluated under this assumption, are found to be given by delta E(c)(x) about 2.02x (eV) and delta E,(v)(x) about 1.26x (eV) for x<=0.14.
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