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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2006Widely tunable GaSb-based external cavity diode laser emitting around 2.3 µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Zappe, H.P.; Wagner, J.
Zeitschriftenaufsatz
1993Electronic study of plasma-induced damage in GaAs heterostructures.
Zappe, H.P.
Zeitschriftenaufsatz
199216 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.
Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P.
Konferenzbeitrag
1992Hot-electron electroluminescence in GaAs transistors.
Zappe, H.P.
Zeitschriftenaufsatz
1991Carrier transport in HEMT's analyzed by high-field electroluminescence.
Zappe, H.P.; As, D.J.
Zeitschriftenaufsatz
1991Electrical damage due to low energy plasma processing of GaAs structures
Kaufel, G.; Zappe, H.P.
Konferenzbeitrag
1991Reactive-ion-etch damage in GaAs processing evaluated by a microwave absorption technique.
Zappe, H.P.; Kaufel, G.
Zeitschriftenaufsatz
1991Spectrum of hot-electron luminescence from high electron mobility transistors.
As, D.J.; Zappe, H.P.
Zeitschriftenaufsatz
1991Study of lower-dimensional transport by electroluminescence.
Zappe, H.P.
Aufsatz in Buch
1991Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.
Ralston, J.D.; Tasker, P.J.; Zappe, H.P.; Esquivias, I.; Fleissner, J.; Gallagher, D.F.G.
Zeitschriftenaufsatz
1990Characterization of GaAs/AlGaAs heterostructure quantum wells by microwave absorption
Jantz, W.; Zappe, H.P.
Konferenzbeitrag
1990Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems.
Jantz, W.; Zappe, H.P.
Zeitschriftenaufsatz
1990Electroluminescence from Gunn domains in GaAs MESFETS as a means for defect detection
Jantz, W.; Zappe, H.P.
Konferenzbeitrag
1990Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field-effect transistors.
Moglestue, C.; Zappe, H.P.
Zeitschriftenaufsatz
1990Influence of RIE- induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures.
As, D.J.; Kaufel, G.; Köhler, K.; Rothemund, W.; Zappe, H.P.; Jantz, W.; Schweizer, T.; Frey, T.
Zeitschriftenaufsatz
1990Mechanisms for the emission of visible light from GaAs field-effect transistors
As, D.J.; Zappe, H.P.
Zeitschriftenaufsatz