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| 2014 | Advanced extra functionality CMOS-based devices
Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2008 | Detailed arsenic concentration profiles at Si/SiO2 interfaces
Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W. | Zeitschriftenaufsatz |
| 2008 | Distribution and segregation of arsenic at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W. | Zeitschriftenaufsatz |
| 2007 | Characterization of the pile-up of As at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Windl, W. | Konferenzbeitrag |
| 2007 | Characterization of the Segregation of Arsenic at the Interface SiO2/Si
Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W. | Konferenzbeitrag |
| 2007 | Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches
Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N.; Windl, W.; Paul, S.; Lerch, W. | Konferenzbeitrag |
| 2006 | Process-induced diffusion phenomena in advanced CMOS technologies
Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F. | Konferenzbeitrag |
| 2005 | Ab initio identification of the nitrogen diffusion mechanism in silicon
Stoddard, N.; Pichler, P.; Duscher, G.; Windl, W. | Zeitschriftenaufsatz |
| 2004 | Silicon Front-End Junction Formation - Physics and Technology
: Pichler, P.; Claverie, A.; Lindsay, R.; Orlowski, M.; Windl, W. | Tagungsband |