Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2007Orthodox etching of HVPE-grown GaN
Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar, R.J.; Müller, S.; Sivel, V.G.M.; Nowak, G.; Grzegory, I.
Konferenzbeitrag, Zeitschriftenaufsatz
2003Selective etching and complementary microprobe techniques
Weyher, J.L.; Frigeri, C.; Müller, S.
Aufsatz in Buch
2003Thick GaN layers grown by hydride vapor-phase epitaxy: Hetero- versus homo-epitaxy
Hageman, P.R.; Kirilyuk, V.; Corbeek, W.H.M.; Weyher, J.L.; Lucznik, B.; Bockowski, M.; Porowski, S.; Müller, S.
Zeitschriftenaufsatz
1999Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers
Frigeri, C.; Baeumler, M.; Migliori, A.; Weyher, J.L.; Jantz, W.
Zeitschriftenaufsatz
1999A study of defects in LEC GaAs after copper diffusion
Frigeri, C.; Weyher, J.L.; Müller, S.; Hiesinger, P.
Konferenzbeitrag
1998Cross-sectional TEM study of degraded high power diode lasers
Frigeri, C.; Weyher, J.L.; Baeumler, M.; Müller, S.; Jantz, W.; Luft, J.; Herrmann, G.; Späth, W.
Konferenzbeitrag
1998Investigation of degraded laser diodes by chemical preparation and luminescence microscopy
Baeumler, M.; Weyher, J.L.; Müller, S.; Jantz, W.; Stibal, R.; Herrmann, G.; Luft, J.; Sporrer, K.; Späth, W.
Konferenzbeitrag
1998Selective etching of III-V materials
Weyher, J.L.
Konferenzbeitrag
1997Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes
Müller, S.; Weyher, J.L.; Dian, R.; Jantz, W.
Zeitschriftenaufsatz
1996Influence of multi wafer annealing of LEC GaAs substrates on the quality of epitaxial layers
Forker, J.; Baeumler, M.; Weyher, J.L.; Jantz, W.; Bernklau, D.; Riechert, H.; Inoue, T.
Konferenzbeitrag