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| 2011 | Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy
Hermann, P.; Hecker, M.; Chumakov, D.; Weisheit, M.; Rinderknecht, J.; Shelaev, A.; Dorozhkin, P.; Eng, L.M. | Zeitschriftenaufsatz |
| 2010 | Local anodic oxidation by atomic force microscopy for nano-Raman strain measurements on silicon-germanium thin films
Kolanek, K.; Hermann, P.; Dudek, P.T.; Gotszalk, T.; Chumakov, D.; Weisheit, M.; Hecker, M.; Zschech, E. | Zeitschriftenaufsatz |
| 2010 | Novel SThM nanoprobe for thermal properties investigation of micro- and nanoelectronic devices
Janus, P.; Szmigiel, D.; Weisheit, M.; Wielgoszewski, G.; Ritz, Y.; Grabiec, P.; Hecker, M.; Gotszalk, T.; Sulecki, P.; Zschech, E. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2010 | Physical and electrical properties of MOCVD and ALD deposited HfZrO4 gate dielectrics for 32nm CMOS high performance logic SOI technologies
Kelwing, T.; Mutas, S.; Trentzsch, M.; Naumann, A.; Trui, B.; Herrmann, L.; Graetsch, F.; Klein, C.; Wilde, L.; Ohsiek, S.; Weisheit, M.; Peeva, A.; Richter, I.; Prinz, H.; Wuerfel, A.; Carter, R.; Stephan, R.; Kücher, P.; Hansch, W. | Konferenzbeitrag |
| 2009 | Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si
Kim, J.-H.; Ignatova, V.A.; Weisheit, M. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2009 | Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si
Kim, J.-H.; Ignatova, V.A.; Kücher, P.; Weisheit, M.; Zschech, E. | Zeitschriftenaufsatz |
| 2009 | Utilizing near-field and depolarization effects for tip-enhanced Raman spectroscopy on semiconductor nanostructures
Hermann, P.; Chong, Z.; Hecker, M.; Olk, P.; Weisheit, M.; Rinderknecht, J.; Ritz, Y.; Kücher, P.; Eng, L.M. | Abstract, Konferenzbeitrag |