| | |
|---|
| 2020 | A 600 V p-GaN gate HEMT with intrinsic freewheeling schottky-diode in a GaN power IC with bootstrapped driver and sensors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2020 | A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2020 | A GaN-based currrent sense amplifier for GaN HEMTs with integrated current shunts
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2020 | Growth and fabrication of quasivertical current aperture vertical electron transistor structures
Doering, Philipp; Driad, Rachid; Leone, Stefano; Müller, Stefan; Waltereit, Patrick; Kirste, Lutz; Polyakov, Vladimir M.; Mikulla, Michael; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2020 | Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage
Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2020 | Monolithic integrated AlGaN/GaN power converter topologies on high-voltage AlN/GaN superlattice buffer
Mönch, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2020 | Monolithic integration of inductive components in a GaN-on-Si technology
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2020 | Si-substrate removal for AlGaN/GaN devices on PCB carriers
Reiner, Richard; Gerrer, Thomas; Weiss, Beatrix; Waltereit, Patrick; Mönch, Stefan; Meder, Dirk; Sinnwell, Matthias; Dammann, Michael; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | 3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond
Gerrer, Thomas; Czap, Heiko; Maier, Thomas; Benkhelifa, Fouad; Müller, Stefan; Nebel, Christoph E.; Waltereit, Patrick; Quay, Rüdiger; Cimalla, Volker | Zeitschriftenaufsatz |
| 2019 | Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers
Gerrer, Thomas; Graff, Andreas; Simon-Najasek, Michél; Czap, Heiko; Maier, Thomas; Benkhelifa, Fouad; Müller, Stefan; Nebel, Christoph E.; Waltereit, Patrick; Quay, Rüdiger; Cimalla, Volker | Zeitschriftenaufsatz |
| 2019 | Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Meder, Dirk; Basler, Michael; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2019 | A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2019 | Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
Frei, Kathrin; Trejo-Hernández, Raúl; Schütt, Sebastian; Kirste, Lutz; Prescher, Mario; Aidam, Rolf; Müller, Stefan; Waltereit, Patrick; Ambacher, Oliver; Fiederle, Michael | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2019 | MBE of III-Nitride Semiconductors for Electronic Devices
Aidam, Rolf; Ambacher, Oliver; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Lim, T.; Quay, Rüdiger; Waltereit, Patrick | Aufsatz in Buch |
| 2019 | Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Schwantuschke, Dirk; Khandelwal, Sourabh | Zeitschriftenaufsatz |
| 2019 | A pseudo-complementary GaN-based gate driver with Reduced Static Losses
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | Halbleiterbauelement und Verfahren zu dessen Herstellung
Köhler, Klaus; Waltereit, Patrick | Patent |
| 2018 | Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2018 | Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2018 | Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | PCB-embedding for GaN-on-Si power devices and ICs
Reiner, Richard; Weiss, Beatrix; Meder, Dirk; Waltereit, Patrick; Vockenberger, C.; Gerrer, Thomas; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Ambacher, Oliver; Quay, Rüdiger | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2017 | Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2017 | Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick | Konferenzbeitrag |
| 2017 | Investigation of GaN-HEMTs in reverse conduction
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Pulse robustness of AlGaN/GaN HEMTs with Schottky- and MIS-gates
Unger, Christian; Mocanu, Mariana; Pfost, Martin; Waltereit, Patrick; Reiner, Richard | Konferenzbeitrag |
| 2017 | Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick | Konferenzbeitrag |
| 2017 | Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan | Konferenzbeitrag |
| 2017 | Thermal stability and failure mechanism of schottky gate AlGaN/GaN HEMTs
Mocanu, Manuela; Unger, Christian; Pfost, Martin; Waltereit, Patrick; Reiner, Richard | Zeitschriftenaufsatz |
| 2017 | Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Nebel, Christoph E.; Quay, Rüdiger | Konferenzbeitrag |
| 2016 | Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O. | Konferenzbeitrag |
| 2010 | Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O. | Zeitschriftenaufsatz |
| 2009 | Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K. | Konferenzbeitrag |