Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Comparison of the environmental properties of parasiticides and harmonisation of the basis for environmental assessment at the EU level
Römbke, Jörg; Duis, Karen; Egeler, Philipp; Gilberg, Daniel; Schuh, Christine; Herrchen, Monika; Hennecke, Dieter; Hölzle, Ludwig E.; Heilmann-Thudium, Brigitte; Wohde, Manuel; Wagner, Julia; Düring, Rolf-Alexander
Bericht
2019An experimental study on HCI under various stress conditions
Lange, André; Weddeler, Nicki; Wagner, Jakob; Bogacz, Steffen; Drehsig, Daniel
Vortrag
2019inspECT-PRO - Breitband-Wirbelstromprüfelektronik für Mehrkanal- und Mehrfrequenzanwendungen
Koster, Dirk; Rick, Rainer; Oswald, Jan; Stopp, Philipp; Weingard, Christoph; Wagner, Jens
Konferenzbeitrag
2018Asset-liability management for long-term insurance business
Albrecher, H.; Bauer, D.; Embrechts, P.; Filipović, D.; Koch-Medina, P.; Korn, R.; Loisel, S.; Pelsser, A.; Schiller, F.; Schmeiser, H.; Wagner, J.
Zeitschriftenaufsatz
2018Microoptoelectromechanical systems-based external cavity quantum cascade lasers for real-time spectroscopy
Butschek, Lorenz; Hugger, Stefan; Jarvis, Jan-Philip; Härtelt, Marko; Merten, André; Schwarzenberg, Markus; Grahmann, Jan; Stothard, David; Warden, Matthew; Carson, Christoph; Macarthur, John; Fuchs, Frank; Ostendorf, Ralf; Wagner, Joachim
Zeitschriftenaufsatz
2018Robot-assisted laser tissue soldering system
Basov, Svetlana; Milstein, Amit; Sulimani, Erez; Platkov, Max; Peretz, Eli; Rattunde, Marcel; Wagner, Joachim; Netz, Uri; Katzir, Abraham; Nisky, Ilana
Zeitschriftenaufsatz
2018Ultraviolet laser ablation as technique for defect repair of GaN‑based light‑emitting diodes
Passow, Thorsten; Kunzer, Michael; Pfeuffer, Alexander; Binder, Michael; Wagner, Joachim
Zeitschriftenaufsatz
2017100 W-level peak-power laser system tunable from 8 to 10 μm
Gutty, Francois; Grisard, Arnaud; Larat, Christian; Papillon, Dominique; Schwarz, Muriel; Gerard, Bruno; Ostendorf, Ralf; Rattunde, Marcel; Wagner, Joachim; Lallier, Eric
Konferenzbeitrag
2017140 W peak power laser system tunable in the LWIR
Gutty, F.; Grisard, A.; Larat, C.; Papillon, D.; Schwarz, M.; Gerard, B.; Ostendorf, R.; Rattunde, M.; Wagner, J.; Lallier, E.
Zeitschriftenaufsatz
2017Chromogene Polymere - Kunststoffe mit steuerbaren optischen Eigenschaften
Wagner, Jürgen; Ruhmann, Ralf; Eberhardt, Volker; Rabe, Christian
Konferenzbeitrag
2017GaSb-based VECSEL for high-power applications and Ho-pumping
Holl, Peter; Rattunde, Marcel; Adler, Steffen; Scholle, Karsten; Lamrini, Samir; Fuhrberg, Peter; Diwo-Emmer, Elke; Aidam, Rolf; Bronner, Wolfgang; Wagner, Joachim
Konferenzbeitrag
2017Halbleiter-Scheibenlaser und ihre Integration in anwendungsspezifische Resonatoren
Holl, Peter
: Wagner, Joachim (Referent); Reiter, Günter (Referent); Rattunde, Marcel (Betreuer)
Dissertation
2017High peak-power laser system tuneable from 8 to 10 μm
Gutty, F.; Grisard, A.; Larat, C.; Papillon, D.; Schwarz, M.; Gérard, B.; Ostendorf, R.; Wagner, J.; Lallier, E.
Zeitschriftenaufsatz
2017Hyperspectral data acquisition and analysis in imaging and real-time active MIR backscattering spectroscopy
Jarvis, Jan-Philip; Härtelt, Marko; Hugger, Stefan; Butschek, Lorenz; Fuchs, Frank; Ostendorf, Ralf; Wagner, Joachim; Beyerer, Juergen
Zeitschriftenaufsatz
2017Hyperspectral imaging for standoff trace detection of explosives using quantum cascade lasers
Fuchs, F.; Hugger, S.; Jarvis, J.P.; Härtelt, M.; Yang, Q.K.K.; Rattunde, M.; Ostendorf, R.; Schilling, C.; Driad, R.; Aidam, R.; Wagner, J.
Konferenzbeitrag
2017Real-time spectroscopy enabled by external cavity QCLs with MOEMS diffraction gratings
Butschek, Lorenz; Hugger, Stefan; Jarvis, Jan-Philip; Härtelt, Marko; Merten, André; Grahmann, Jan; Boskovic, Dusan; Fuchs, Frank; Ostendorf, Ralf; Schilling, Christian; Rattunde, Marcel; Wagner, Joachim
Konferenzbeitrag
2017Recyclingpotenzial strategischer Metalle (ReStra)
Sander, Knut; Gößling-Reisemann, Stefan; Zimmermann, Till; Marscheider-Weidemann, Frank; Wilts, Henning; Schebek, Lieselotte; Wagner, Jörg; Heegn, Hanspeter; Pehlken, Alexandra
Bericht
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias
: Wagner, Joachim; Lausen, G.; Ambacher, O.; Schwierz, F.
Dissertation
2016Closure of incisions in cataract surgery in-vivo using a temperature controlled laser soldering system based on a 1.9µm semiconductor laser
Gabay, I.; Basov, S.; Varssano, D.; Barequet, I.; Rosner, M.; Rattunde, M.; Wagner, J.; Platkov, M.; Harlev, M.; Rossmann, U.; Katzir, A.
Konferenzbeitrag
2016Effects of image compression on ear biometrics
Rathgeb, C.; Pflug, A.; Wagner, J.; Busch, C.
Zeitschriftenaufsatz
2016Etablierung einer Messtechnik zur quantitativen Gain-Bestimmung von Avalanche-Photodioden
Stolch, L.
: Wagner, J. (Referent)
Master Thesis
2016A flame retardant synergism of organic disulfides and phosphorous compounds
Wagner, Jochen; Deglmann, Peter; Fuchs, Sabine; Ciesielski, Michael; Fleckenstein, Christoph A.; Döring, Manfred
Zeitschriftenaufsatz
2016GaSb-based 2.0 µm SDL with 17 W output power at 20°C
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Wagner, J.
Zeitschriftenaufsatz
2016Generation und Charakterisierung von NV-Zentren in Diamant mittels Stickstoff-Gasphasen-Dotierung
Popko, J.A.
: Wagner, J. (Referent); Schreyvogel, C. (Betreuer)
Bachelor Thesis
2016High voltage GaN-based Schottky diodes in non-isolated LED buck converters
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.
Konferenzbeitrag
2016Hyperspectral image analysis for standoff trace detection using IR laser spectroscopy
Jarvis, J.P.; Fuchs, F.; Hugger, S.; Ostendorf, R.; Butschek, L.; Yang, Q.; Dreyhaupt, A.; Grahmann, J.; Wagner, J.
Konferenzbeitrag
2016Imaging standoff trace detection of explosives using IR-laser based backscattering
Fuchs, F.; Hugger, S.; Jarvis, J.; Yang, Q.K.; Ostendorf, R.; Schilling, C.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.
Konferenzbeitrag
2016LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers
Zibold, A.; Kunzer, M.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Wagner, J.; Ambacher, O.
Konferenzbeitrag
2016Modeling the electro-optical performance of high power mid-infrared quantum cascade lasers
Tholl, H.D.; Yang, Q.; Wagner, J.
Zeitschriftenaufsatz
2016MOEMS EC-QCL for real-time identification of chemical compounds
Ostendorf, R.; Butschek, L.; Merten, A.; Dreyhaupt, A.; Grahmann, J.; Rattunde, M.; Jarvis, J.; Härtelt, M.; Hugger, S.; Fuchs, F.; Wagner, J.
Konferenzbeitrag
2016Optimization of 2.5 μm VECSEL: Influence of the QW active region
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2016Project FAST - fast actuators sensors & transceivers
Ellinger, Frank; Meister, Tilo; Grosa, Patrick; Jamshidi, Kambiz; Ihle, David; Franchi, Norman; Wagner, Jens; Richter, Andreas; Fettweis, Gerhard; Fitzek, Frank; Kreissig, Martin; Klessig, Henrik; Kraemer, Rolf; Richter, Klaus; Frotzscher, Andreas; Loehr, Robert; Winkler, Wolfgang; Zoeke, Dominik; Carôt, Alexander; Bluschke, Andreas
Konferenzbeitrag
2016Quantum cascade laser based active hyperspectral imaging for standoff detection of chemicals on surfaces
Hugger, Stefan; Fuchs, Frank; Jarvis, J.P.; Yang, Q.K.; Rattunde, M.; Ostendorf, R.; Schilling, C.; Draid, R.; Bronner, W.; Aidam, R.; Wagner, J.; Tybussek, Thorsten; Rieblinger, Klaus
Konferenzbeitrag
2016Real-time spectroscopic sensing using a widely tunable external cavity-QCL with MOEMS diffraction grating
Ostendorf, R.; Butschek, L.; Merten, A.; Grahmann, J.; Jarvis, J.P.; Hugger, S.; Fuchs, F.; Wagner, J.
Konferenzbeitrag
2016Recent advances and applications of external Cavity-QCLs towards hyperspectral imaging for standoff detection and real-time spectroscopic sensing of chemicals
Ostendorf, R.; Butschek, L.; Hugger, S.; Fuchs, F.; Yang, Q.; Jarvis, J.; Schilling, C.; Rattunde, M.; Merten, A.; Grahmann, J.; Boskovic, D.; Tybussek, T.; Rieblinger, K.; Wagner, J.
Zeitschriftenaufsatz
2016Security Research Conference. 11th Future Security
: Ambacher, Oliver (Ed.); Wagner, Joachim (Ed.); Quay, Rüdiger (Ed.)
Tagungsband
2016Vorrichtung zur Freistrahlübertragung von Energie und Information
Tholl, Hans Dieter; Wagner, Joachim
Patent
2015Detection of explosives and their precursors using imaging mid-infrared laser backscattering spectroscopy
Fuchs, F.; Hugger, S.; Jarvis, J.; Yang, Q.K.; Ostendorf, R.; Schilling, C.; Driad, R.; Aidam, R.; Bächle, A.; Bronner, W.; Wagner, J.
Konferenzbeitrag
2015Doping and electrical properties of the semiconductor material AIGaN
Richter, J.
: Fiederle, M. (Referent); Wagner, J. (Referent)
Master Thesis
2015GaSb-based 2µm semiconductor disk laser: Power scaling for optical pumping of Ho:YAG
Holl, P.; Rattunde, M.; Adler, S.; Kaspar, S.; Bronner, W.; Bächle, A.; Aidam, R.; Wagner, J.; Scholle, K.; Lamrini, S.; Fuhrberg, P.
Konferenzbeitrag
2015Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration
Weig, T.; Höck, H.; Holc, Katarzyna; Köhler, Klaus; Wagner, Joachim; Schwarz, U.T.
Zeitschriftenaufsatz
2015Leistungsgrenzen von 1920 nm Halbleiter-Scheibenlasern
Lindner, C.
: Wagner, J. (Referent); Schätz, T. (Referent)
Bachelor Thesis
2015Mikroelektromechanisches System zum Durchstimmen von Lasern
Schenk, Harald; Grahmann, Jan; Wagner, Joachim; Ostendorf, Ralf; Rattunde, Marcel
Patent
2015Optisch gepumpter Halbleiter-Scheibenlaser
Töpper, Tino; Rattunde, Marcel; Kaspar, Sebastian; Wagner, Joachim
Patent
2015Rate equation modelling of the power-versus-current characteristics of high power mid-infrared quantum cascadelasers
Tholl, H.D.; Wagner, J.; Yang, Q.
Konferenzbeitrag
2015Recent advances in power scaling of GaSb-based semiconductor disk lasers
Holl, Peter; Rattunde, Marcel; Adler, Steffen; Kaspar, S.; Bronner, Wolfgang; Bächle, Andreas; Aidam, Rolf; Wagner, Joachim
Zeitschriftenaufsatz
2015Standoff trace detection of explosives with active infrared hyperspectral imagery
Fuchs, F.; Hugger, S.; Jarvis, J. P.; Yang, Q. K.; Ostendorf, R.; Wagner, J.; Schilling, C.; Bronner, W.; Driad, R.; Aidam, R.
Konferenzbeitrag
2015Standoff trace detection of explosives with infrared hyperspectral imagery
Fuchs, F.; Hugger, S.; Jarvis, J. P.; Yang, Q. K.; Zaum, F.; Ostendorf, R.; Schilling, C.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.
Konferenzbeitrag
2015Widely tuneable quantum cascade lasers for spectroscopic sensing
Wagner, J.; Ostendorf, R.; Grahmann, Jan; Merten, André; Hugger, S.; Jarvis, J.P.; Fuchs, F.; Boskovic, D.; Schenk, Harald
Konferenzbeitrag
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Konferenzbeitrag
20142-µm high-brilliance micro-cavity VECSEL with >2W output power
Kaspar, S.; Rattunde, M.; Holl, P.; Adler, S.; Schilling, C.; Bächle, A.; Manz, C.; Aidam, R.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2014Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes
Weig, T.; Lükens, G.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Konferenzbeitrag
2014Analysis of dielectric properties of layered plastics at W-band frequencies
Klenner, M.; Zech, C.; Hülsmann, A.; Schlechtweg, M.; Wagner, J.; Ambacher, O.
Konferenzbeitrag
2014Augmenting communication, emotion expression and interaction capabilities of individuals with cerebral palsy
Scherer, Reinhold; Wagner, Johanna; Billinger, Martin; Müller-Putz, Gernot; Raya, Rafael; Rocon de Lima, Eduardo; Mohamad, Yehya; Tassilo Hettich, Dirk; Bolinger, Elaina; Iosa, Marco; Cincotti, Febo; Londral, Ana Rita; Mesquita, Joana; Lloria Garcia, Mariano; Belda, Juanma
Konferenzbeitrag
2014Combining external cavity quantum cascade lasers and MOEMS technology: An approach for miniaturization and fast wavelength scanning
Ambacher, O.; Ostendorf, R.; Bleh, D.; Merten, A.; Grahmann, J.; Schmidt, R.; Kunzer, M.; Hugger, S.; Wagner, J.
Konferenzbeitrag
2014Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Zeitschriftenaufsatz
2014Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Konferenzbeitrag
2014Forming plastic shields on a reconfigurable tooling system
Simon, Dominik; Zitzlsberger, Sabine; Wagner, Julia; Maurer, Christoph; Haller, Dieter; Reinhart, Gunther
Konferenzbeitrag
2014Gallium nitride laser diodes with integrated absorber: On the dynamics of self-pulsation
Holc, K.; Lükens, G; Weig, T.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Zeitschriftenaufsatz, Konferenzbeitrag
2014GaN-based micro-LED arrays on flexible substrates for optical cochlear implants
Goßler, C.; Bierbrauer, C.; Moser, R.; Kunzer, M.; Holc, K.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwaerzle, M.; Ruther, P.; Paul, O.; Neef, J.; Keppeler, D.; Hoch, G.; Moser, T.; Schwarz, U.T.
Zeitschriftenaufsatz
2014Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
Däubler, J.; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.
Zeitschriftenaufsatz
2014Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side
Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2014Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress
Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M.A.; Wagner, J.; Schwarz, U.T.; Zanoni, E.
Konferenzbeitrag
2014Multilayer dielectric elastomer stack actuators
Wagner, J.; Krause, J.; Clauberg, K.; Feller, T.; Orselli, E.; Schilling, C.; Lellinger, Dirk; Alig, I.; Uhl, D.; Böse, R.; Rabindranath, R.; Kretschmer, H.-R.; Theile, P.; Lotz, P.; Grotepaß, T.; Haus, H.; Mößinger, H.; Schlaak, H.F.
Konferenzbeitrag
2014Quantum cascade lasers (QCL) for active hyperspectral imaging
Yang, Q.K.; Fuchs, F.; Wagner, J.
Zeitschriftenaufsatz
2014A reconfigurable tooling system for producing plastic shields
Simon, Dominik; Kern, Lisa; Wagner, Julia; Reinhart, Gunther
Zeitschriftenaufsatz, Konferenzbeitrag
2014Reflexionsspektroskopie an verschiedenen Wasserproben im Millimeterwellenbereich
Abels, T.
: Hülsmann, A. (Betreuer); Klenner, M. (Betreuer); Wagner, J. (Referent)
Bachelor Thesis
2014Spectroscopic detection of hazardous substances using broadband-tunable quantum cascade lasers
Hugger, S.; Fuchs, F.; Jarvis, J.; Yang, Q.K.; Driad, R.; Bronner, W.; Aidam, R.; Ostendorf, R.; Wagner, J.
Konferenzbeitrag
2014Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
Santi, C. de; Meneghini, M.; Marioli, M.; Buffolo, M.; Trivellin, N.; Weig, T.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.; Meneghesso, G.; Zanoni, E.
Zeitschriftenaufsatz, Konferenzbeitrag
2014Trace detection of explosive substances in hyperspectral imagery
Jarvis, J.P.; Fuchs, F.; Hugger, S.; Blattmann, V.; Yang, Q.; Ostendorf, R.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.; Beyerer, Jürgen
Konferenzbeitrag
2014Untersuchung der Eigenrauschmechanismen metamorpher Feldeffekttransistoren mit hoher Elektronenbeweglichkeit (HEMT) zwischen 5GHz und 25GHz bei 15K
Jacob, K.
: Wagner, J. (Betreuer); Seelmann-Eggebert, M. (Betreuer)
Master Thesis
2013 Power scaling of narrow-linewidth 2μm GaSb-based semiconductor disk laser
Kaspar, S.; Rattunde, M.; Adler, S.; Topper, T.; Manz, C.; Kohler, K.; Wagner, J.
Konferenzbeitrag
201330 W peak-power 3 ns pulse-width operation of a 2 µm electro-optically cavity-dumped VECSEL
Kaspar, S.; Rattunde, M.; Töpper, T.; Adler, S.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2013Aluminum-germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes
Goßler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Köhler, K.; Schwarz, U.T.; Wagner, J.
Zeitschriftenaufsatz
2013Beam combining of quantum cascade lasers for remote sensing
Tholl, H.D.; Wagner, J.
Zeitschriftenaufsatz
2013Benign and high-yielding, large-scale synthesis of diphenylphosphinodithioic acid and related compounds
Wagner, J.; Ciesielski, M.; Fleckenstein, C.A.; Denecke, H.; Garlichs, F.; Ball, A.; Doering, M.
Zeitschriftenaufsatz
2013Broadband-tunable external-cavity quantum cascade lasers for spectroscopy and standoff detection
Fuchs, F.; Hugger, S.; Yang, Q.K.; Jarvis, J.P.; Kinzer, M.; Ostendorf, R.; Schilling, C.; Driad, R.; Bronner, W.; Bächle, A.; Aidam, R.; Wagner, J.
Aufsatz in Buch
2013Broadband-tunable external-cavity quantum cascade lasers for the spectroscopic detection of hazarduos substances
Hugger, S.; Fuchs, F.; Jarvis, J.P.; Kinzer, M.; Yang, Q.K.; Driad, R.; Aidam, R.; Wagner, J.
Konferenzbeitrag
2013Correlation between noise properties and coherent coupling of lateral modes in quantum cascade lasers
Kinzer, M.; Yang, Q.K.; Hugger, S.; Schilling, C.; Ostendorf, R.; Aidam, R.; Driad, R.; Bronner, W.; Fuchs, F.; Wagner, J.
Zeitschriftenaufsatz
2013Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence
Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M.A.; Wagner, J.; Schwarz, U.T.; Zanoni, E.
Zeitschriftenaufsatz
2013Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm
Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.
Zeitschriftenaufsatz
2013Detection of hazardous substances using broadband-tuneable quantum cascade laser based mid-infrared spectroscopy
Fuchs, F.; Hugger, S.; Jarvis, J.; Yang, Q.K.; Ostendorf, R.; Schilling, C.; Driad, R.; Aidam, R.; Bächle, A.; Bronner, W.; Wagner, J.
Konferenzbeitrag
2013Experimental determination of the dominant type of Auger recombination in InGaN quantum wells
Galler, B.; Lugauer, H.; Binder, M.; Hollweck, R.; Folwill, Y.; Nirschl, A.; Gomez-Iglesias, A.; Hahn, B.; Wagner, J.; Sabathil, M.
Zeitschriftenaufsatz
2013High power efficiency AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2013High-performance 2.X micron semiconductor disk lasers
Rattunde, M.; Kaspar, S.; Adler, S.; Holl, P.; Bächle, A.; Manz, C.; Wagner, J.
Konferenzbeitrag
2013Hyperspectral image analysis for standoff detection of explosives
Jarvis, J.P.; Fuchs, F.; Hugger, S.; Blattmann, V.; Yang, Q.K.; Ostendorf, R.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.; Beyerer, Jürgen
Konferenzbeitrag
2013Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
Binder, M.; Nirschl, A.; Zeisel, R.; Hager, T.; Lugauer, H.; Sabathil, M.; Bougeard, D.; Wagner, J.; Galler, B.
Zeitschriftenaufsatz
2013Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias
Holc, K.; Weig, T.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Zeitschriftenaufsatz
2013Infrared hyperspectral standoff detection of explosives
Fuchs, F.; Hugger, S.; Jarvis, J.P.; Blattmann, V.; Kinzer, M.; Yang, Q.K.; Ostendorf, R.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.
Konferenzbeitrag
2013Investigations on correlation between I-V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes
Binder, M.; Galler, B.; Furitsch, M.; Off, J.; Wagner, J.; Zeisel, R.; Katz, S.
Zeitschriftenaufsatz
2013Laser direct writing of GaN-based light-emitting diodes - the suitable laser source for mesa definition
Moser, R.; Goßler, C.; Kunzer, M.; Köhler, K.; Pletschen, W.; Brunne, J.; Schwarz, U.T.; Wagner, J.
Zeitschriftenaufsatz
2013Linewidth narrowing and power scaling of single-frequency 2.X µm GaSb-based semiconductor disk lasers
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2013Micro-cavity 2-µm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader
Kaspar, S.; Rattunde, M.; Schilling, C.; Adler, S.; Holl, P.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2013Multi-wavelength and multi-band infrared semiconductor lasers
Ostendorf, R.; Hugger, S.; Rattunde, M.; Schilling, C.; Kaspar, S.; Aidam, R.; Baechle, A.; Manz, C.; Driad, R.; Fuchs, F.; Wagner, J.
Konferenzbeitrag
2013Multilayer material analysis using an active millimeter wave imaging system
Klenner, M.; Zech, C.; Hülsmann, A.; Tessmann, A.; Leuther, A.; Schlechtweg, M.; Wagner, J.; Ambacher, O.
Konferenzbeitrag
2013New DEA materials by organic modification of silicone and polyurethane networks
Kussmaul, B.; Risse, S.; Wegener, M.; Bluemke, M.; Krause, J.; Wagner, J.; Feller, T.; Clauberg, K.; Hitzbleck, J.; Gerhard, R.; Krueger, H.
Konferenzbeitrag
2013Numerical simulation of organic binder decomposition during thermal debinding
Kraft, T.; Schmidt, I.; Riedel, H.; Svoboda, J.; Kestler, H.; Wagner, J.
Konferenzbeitrag
2013Picosecond pulse generation in monolithic GaN-based multi-section laser diodes
Holc, K.; Weig, T.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Konferenzbeitrag
2013Recent advances in 2-µm GaSb-based semiconductor disk laser - power scaling, narrow-linewidth and short-pulse operation
Kaspar, S.; Rattunde, M.; Töpper, T.; Moser, R.; Adler, S.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2012(Al, In)GaN laser diodes with optimized ridge structures
Holc, K.; Köhler, K.; Pletschen, W.; Wagner, J.; Schwarz, U.T.
Konferenzbeitrag
2012Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2012AlGaN-based 355 nm UV light-emitting diodes with high power efficiency
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2012Diffraction-limited infrared-imaging of the near-field intensity emitted by quantum-cascade lasers
Kinzer, M.; Yang, Q.K.; Hugger, S.; Brunner, M.; Fuchs, F.; Wagner, J.
Zeitschriftenaufsatz
2012Dispersion of effective refractive indices of mid-infrared quantum cascade lasers
Yang, Q. K.; Kinzer, M.; Aidam, R.; Driad, R.; Bronner, W.; Hugger, S.; Ostendorf, R.; Fuchs, F.; Wagner, J.
Zeitschriftenaufsatz
2012Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Electro-optically cavity dumped 2 µm semiconductor disk laser emitting 3 ns pulses of 30 W peak power
Kaspar, S.; Rattunde, M.; Töpper, T.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2012GaSb-based 2-3 µm semiconductor disk lasers: Versatile lasers for high-power and narrow linewidth emission
Rattunde, Marcel; Kaspar, S.; Töpper, T.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Konferenzbeitrag
2012GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation
Wagner, J.; Rattunde, M.; Töpper, T.; Kaspar, S.; Rösener, B.; Manz, C.; Köhler, K.
Konferenzbeitrag
2012High-power 2.0 µm semiconductor disk laser-influence of lateral lasing
Töpper, T.; Rattunde, Marcel; Kaspar, S.; Moser, R.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Zeitschriftenaufsatz
2012Imaging standoff detection of explosives with broad band tunable quantum cascade lasers
Fuchs, F.; Jarvis, J.; Hugger, S.; Kinzer, M.; Yang, Q.K.; Ostendorf, R.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.
Konferenzbeitrag
2012Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
Galler, B.; Drechsel, P.; Monnard, R.; Rode, P.; Stauss, P.; Froehlich, S.; Bergbauer, W.; Binder, M.; Sabathil, M.; Hahn, B.; Wagner, J.
Zeitschriftenaufsatz
2012Laser processing of gallium nitride-based light-emitting diodes with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Zeitschriftenaufsatz
2012Laser processing of GaN-based LEDs with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Schmidt, R.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Konferenzbeitrag
2012Laserbasierte Ferndetektion von Explosivstoffen
Fuchs, F.; Hugger, S.; Yang, Q.K.; Kinzer, M.; Bronner, W.; Loesch, R.; Aidam, R.; Wagner, J.; Degreif, K.; Rademacher, S.; Schnürer, F.; Schweikert, W.
Konferenzbeitrag
2012Neue Technologie zur voll-optischen Mikro- und Nanostrukturierung für die Herstellung diffraktiv-optischer und photonischer Elemente
Wagner, J.; Döring, S.; Rosenhauer, R.; Stumpe, J.
Konferenzbeitrag
2012Polymer-based optical functional elements
Stumpe, J.; Sakhno, O.; Gritsai, Y.; Rosenhauer, R.; Döring, S.; Fischer, T.; Rutloh, M.; Wagner, J.
Aufsatz in Buch
2012Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F.; Polyakov, V.M.; Baeumler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Cäsar, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Zeitschriftenaufsatz
2012Semiconductor disk laser at 2.05 µm wavelength with <100 kHz linewidth at 1 W output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2012Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2012Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Topper, T.; Manz, C.; Kohler, K.; Wagner, J.
Konferenzbeitrag
2012Single-frequency kHz-linewidth 2-m GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2012Wall-plug efficiency of mid-infrared quantum cascade lasers
Yang, Q.K.; Schilling, C.; Ostendorf, R.; Hugger, S.; Fuchs, F.; Wagner, J.
Zeitschriftenaufsatz
20112 µm semiconductor disk laser with a heterodyne linewidth below 10 kHz
Rösener, B.; Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Zeitschriftenaufsatz
20112µm semiconductor disk laser technology
Rattunde, M.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2011Aluminum-germanium wafer bonding of (AlGaIn)N thin film light-emitting diodes
Gossler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Koehler, K.; Schwarz, U.T.; Wagner, J.
Abstract
2011Beam steering and lateral hole burning in mid-infrared quantum-cascade lasers
Yang, Q.K.; Kinzer, M.; Fuchs, F.; Hugger, S.; Hinkov, B.; Bronner, W.; Lösch, R.; Aidam, R.; Wagner, J.
Zeitschriftenaufsatz
2011Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2011Controlling the Mg doping profile in MOVPE-grown GaN/Al(0.2)Ga(0.8)N light-emitting diodes
Gutt, R.; Köhler, K.; Wiegert, J.; Kirste, L.; Passow, T.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2011Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers
Kunzer, M.; Gutt, R.; Kirste, L.; Passow, T.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Narrow linewidth 2 µm GaSb-based semiconductor disk laser
Rattunde, M.; Kaspar, S.; Rösener, B.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Abstract
2011Neue Technologie zur voll-optischen Mikro- und Nanostrukturierung von Oberflächen
Wagner, J.; Kulikovska, O.; Kulikovsky, L.; Goldenberg, L.; Rosenhauer, R.; Stumpe, J.
Zeitschriftenaufsatz
2011Quantitative evaluation of loss mechanisms in thin film solar cells using lock-in thermography
Straube, H.; Wagner, J.-M.; Schneider, J.; Breitenstein, O.
Zeitschriftenaufsatz
2011Raman spectra of barium halides in orthorhombic and hexagonal symmetry: An ab initio study
Bohley, C.; Wagner, J.-M.; Pfau, C.; Miclea, P.-T.; Schweizer, S.
Zeitschriftenaufsatz
2011Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
Hossain, N.; Sweeney, S.J.; Rogowsky, S.; Ostendorf, R.; Wagner, J.; Liebich, S.; Zimprich, M.; Volz, K.; Kunert, B.; Stolz, W.
Zeitschriftenaufsatz
2011Sub-MHz-linewidth 200-mW actively stabilized 2.3-µm semiconductor disk laser
Kaspar, S.; Rösener, B.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Zeitschriftenaufsatz
2011Understanding junction breakdown in multicrystalline solar cells
Breitenstein, O.; Bauer, J.; Bothe, K.; Kwapil, W.; Lausch, D.; Rau, U.; Schmidt, J.; Schneemann, M.; Schubert, M.C.; Wagner, J.-M.; Warta, W.
Zeitschriftenaufsatz
2011Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
Rogowsky, S.; Baeumler, M.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Stolz, W.; Volz, K.; Kunert, B.
Zeitschriftenaufsatz
201020W, quasi-cw GaSb-based semiconductor disk laser
Hempler, N.; Hopkins, J.-M.; Kemp, A.; Rösener, B.; Rattunde, M.; Wagner, J.; Burns, D.
Konferenzbeitrag
2010Correlation between composition and stress for high density plasma CVD silicon nitride films
Sah, R.E.; Baumann, H.; Driad, R.; Wagner, J.
Zeitschriftenaufsatz
2010Defect-induced breakdown in multicrystalline silicon solar cells
Breitenstein, O.; Bauer, J.; Wagner, J.-M.; Zakharov, N.; Blumtritt, H.; Lotnyk, A.; Kasemann, M.; Kwapil, W.; Warta, W.
Zeitschriftenaufsatz
2010Determination of the valence band offsets at HfO(2)/InN(0001) and InN/In(0.3)Ga(0.7)N(0001) heterojunctions using X-ray photoelectron spectroscopy
Eisenhardt, A.; Knübel, A.; Schmidt, R.; Himmerlich, M.; Wagner, J.; Schaefer, J.A.; Krischok, S.
Zeitschriftenaufsatz, Konferenzbeitrag
2010External cavity spectral beam combining of 4.6 µm emitting quantum cascade laser arrays
Ostendorf, R.; Hugger, S.; Aidam, R.; Bronner, W.; Fuchs, F.; Lösch, R.; Yang, Q.K.; Wagner, J.; Romasew, E.; Raab, M.; Tholl, H.D.
Konferenzbeitrag
2010GaSb-based high-power and high-brightness semiconductor lasers emitting at >= 2 µm
Wagner, J.; Kelemen, M.T.
Konferenzbeitrag
2010GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 µm wavelength range
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2010GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission
Rattunde, M.; Rösener, B.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2010Infrarot-Halbleiterlaser für gerichtete optronische Gegenmaßnahmen (DIRCM) zum Schutz von Flugzeugen
Wagner, J.; Hugger, S.
Aufsatz in Buch
2010Long-wavelength GaSb disk lasers
Rösener, B.; Rattunde, M.; Hopkins, J.-M.; Burns, D.; Wagner, J.
Aufsatz in Buch
2010Mid-infrared high-power diode lasers and modules
Kelemen, M.T.; Gilly, J.; Rattunde, M.; Wagner, J.; Ahlert, S.; Biesenbach, J.
Konferenzbeitrag
2010Mid-infrared semiconductor lasers for power projection and sensing
Tholl, H.D.; Wagner, J.; Rattunde, M.; Hugger, S.; Fuchs, F.
Konferenzbeitrag
2010Near-UV LEDs for integrated InO-based ozone sensors
Wang, C.Y.; Cimalla, V.; Kunzer, M.; Passow, T.; Pletschen, W.; Kappeler, O.; Wagner, J.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs
Passow, T.; Gutt, R.; Maier, M.; Pletschen, W.; Kunzer, M.; Schmidt, R.; Wiegert, J.; Luick, D.; Liu, S.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2010Optical investigation of the BGaP/GaP/Si material system
Baeumler, M.; Rogowsky, S.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Kunert, B.; Stolz, W.
Konferenzbeitrag
2010Power scaling of quantum cascade lasers via multiemitter beam combining
Hugger, S.; Aidam, R.; Bronner, W.; Fuchs, F.; Lösch, R.; Yang, Q.K.; Wagner, J.; Romasew, E.; Raab, M.; Tholl, H.D.; Höfer, B.; Matthes, A.L.
Zeitschriftenaufsatz
2010Rate equations analysis of external-cavity quantum cascade lasers
Yang, Q.K.; Hinkov, B.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.; Maulini, R.; Faist, J.
Zeitschriftenaufsatz
2010Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Gutt, R.; Kirste, L.; Passow, T.; Kunzer, M.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Time-resolved spectral characteristics of external-cavity quantum cascade lasers and their application to stand-off detection of explosives
Hinkov, B.; Fuchs, F.; Yang, Q.K.; Kaster, J.M.; Bronner, W.; Aidam, R.; Köhler, K.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2010Toward 3 micron wavelength semiconductor disk lasers
Rösener, B.; Rattunde, M.; Manz, C.; Wagner, J.; Hopkins, J.-M.; Burns, D.; Scholle, K.
Zeitschriftenaufsatz
2010Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2009Continuous-wave, room-temperature operation of 2-µm Sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates
Rotter, T.J.; Tatebayashi, J.; Senanayake, P.; Balakrishnan, G.; Rattunde, M.; Wagner, J.; Hader, J.; Moloney, J.V.; Koch, S.W.; Dawson, L.R.; Huffaker, D.L.
Zeitschriftenaufsatz
2009Correlation of surface morphology and photoluminescence fluctuation in green light emitting InGaN/GaN quantum wells
Danhof, J.; Vierheilig, C.; Schwarz, U.T.; Meyer, T.; Peter, M.; Hahn, B.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2009Diode laser arrays for 1.8 to 2.3 µm wavelength range
Kelemen, M.T.; Gilly, J.; Haag, M.; Biesenbach, J.; Rattunde, M.; Wagner, J.
Konferenzbeitrag
2009Diode laser arrays for 1.8 to 2.3 µm wavelength range
Kelemen, M.T.; Gilly, J.; Ahlert, S.; Kissel, H.; Biesenbach, J.; Rattunde, M.; Wagner, J.
Konferenzbeitrag
2009Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2009GaSb-based optically pumped semiconductor disk laser using multiple gain elements
Rösener, B.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2009High-power frequency stabilized tapered diode amplifiers at 1064 nm
Ostendorf, R.; Schilling, C.; Kaufel, G.; Moritz, R.; Wagner, J.; Kochem, G.; Friedmann, P.; Gilly, J.; Kelemen, M.T.
Konferenzbeitrag
2009Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GalnN/GaN light-emitting diodes
Passow, T.; Maier, M.; Kunzer, M.; Crenguta-Columbina, L.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2009Infrared semiconductor laser modules for DIRCM applications
Wagner, J.; Hugger, S.; Rösener, B.; Fuchs, F.; Rattunde, M.; Yang, Q.K.; Bronner, W.; Aidam, R.; Köhler, K.; Raab, M.; Romasew, E.; Tholl, H.D.
Konferenzbeitrag
2009Luminescence properties of thick InGaN quantum-wells
Laubsch, A.; Bergbauer, W.; Sabathil, M.; Strassburg, M.; Lugauer, H.; Peter, M.; Meyer, T.; Brüderl, G.; Wagner, J.; Linder, N.; Streubel, K.; Hahn, B.
Zeitschriftenaufsatz, Konferenzbeitrag
2009A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers
Wagner, J.; Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.
Konferenzbeitrag
2009Optical stand-off detection of explosives and improvised explosive devices - OFDEX
Schnürer, F.; Schweikert, W.; Heil, M.; Bunte, G.; Krause, H.; Fuchs, F.; Kaster, J.; Hinkov, B.; Yang, Q.K.; Bronner, W.; Köhler, K.; Wagner, J.; Jander, P.; Fricke-Begemann, C.; Noll, R.; Hildenbrand, J.; Herbst, J.; Degreif, K.; Lambrecht, A.
Konferenzbeitrag
2009Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J.
Zeitschriftenaufsatz
2009Physical mechanisms of breakdown in multicrystalline silicon solar cells
Kwapil, W.; Kasemann, M.; Gundel, P.; Schubert, M.C.; Warta, W.; Breitenstein, O.; Bauer, J.; Lotnyk, A.; Wagner, J.-M.; Bronsveld, P.C.P.; Coletti, G.
Konferenzbeitrag
2009Physical mechanisms of breakdown in multicrystalline silicon solar cells
Breitenstein, O.; Bauer, J.; Wagner, J.-M.; Blumtritt, H.; Lotnyk, A.; Kasemann, M.; Kwapil, W.; Warta, W.
Konferenzbeitrag
2009Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
Rattunde, M.; Rösener, B.; Hempler, N.; Hopkins, J.-M.; Burns, D.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2009Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K.
Zeitschriftenaufsatz, Konferenzbeitrag
2009Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J.
Konferenzbeitrag
2009Reduced non-thermal roll-over in violet-emitting GaInN wide-well LEDs grown on low-dislocation-density substrates
Maier, M.; Passow, T.; Kunzer, M.; Schirmacher, W.; Pletschen, W.; Kirste, L.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2009Reduced nonthermal rollover of wide-well GaInN light-emitting diodes
Maier, M.; Köhler, K.; Kunzer, M.; Pletschen, W.; Wagner, J.
Zeitschriftenaufsatz
2009Semiconductor disk laser pumped Cr2+:Znse lasers
Hempler, N.; Hopkins, J.-M.; Rösener, B.; Rattunde, M.; Wagner, J.; Fedorov, V.V.; Moskalev, I.S.; Mirov, S.B.; Burns, D.
Zeitschriftenaufsatz
2009Short-pulse high-power operation of GaSb-based diode lasers
Müller, M.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Wagner, J.
Zeitschriftenaufsatz
2009Spectral beam combining of quantum cascade lasers in an external cavity
Hugger, S.; Fuchs, F.; Aidam, R.; Bronner, W.; Lösch, R.; Yang, Q.K.; Schulz, N.; Wagner, J.; Romasev, E.; Raab, M.; Tholl, H.D.
Konferenzbeitrag
2009Time-resolved characterization of external-cavity quantum-cascade lasers
Hinkov, B.; Yang, Q.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2009Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)
Knübel, A.; Aidam, R.; Cimalla, V.; Kirste, L.; Baeumler, M.; Leancu, C.-C.; Lebedev, V.; Wallauer, J.; Walther, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2009Tunable GaAs-based high power tapered amplifiers in an external cavity setup
Schilling, C.; Ostendorf, R.; Kaufel, G.; Moritz, R.; Wagner, J.; Ambacher, O.
Konferenzbeitrag
2009Tuning and brightness optimization of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm
Hempler, N.; Hopkins, J.-M.; Rattunde, M.; Rösener, B.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Konferenzbeitrag
2009Wavelength stabilization and mode selection of a GaSb-based semiconductor disk laser at 2 µm by using a volume Bragg grating
Scholle, K.; Lamrini, S.; Fuhrberg, P.; Rattunde, M.; Wagner, J.
Konferenzbeitrag
2008(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors
Wagner, J.; Wang, C.Y.; Röhlig, C.-C.; Maier, M.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Cimalla, V.; Köhler, K.; Ambacher, O.
Konferenzbeitrag
20085W Mid-IR optically-pumped semiconductor disk laser
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Konferenzbeitrag
2008Band anticrossing in diluted AlxGa1-xAs1-yNy (x <= 0.37,y <= 0.04)
Procz, S.; Fiederle, M.; Kunzer, M.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2008Beleuchtungsvorrichtung und Verfahren zur Erzeugung einer flächigen Lichtausgabe
Amelung, J.; Wagner, J.
Patent
2008Coherent acoustic phonons in nanostructures
Dekorsky, T.; Taubert, R.; Hudert, F.; Bartels, A.; Habenicht, A.; Merkt, F.; Leiderer, P.; Köhler, K.; Schmitz, J.; Wagner, J.
Konferenzbeitrag
2008Current- and temperature-induced beam steering in 7.8-µm emitting quantum-cascade lasers
Hinkov, B.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2008Dispersive gain and loss in midinfrared quantum cascade laser
Revin, D.G.; Soulby, M.R.; Cockburn, J.W.; Yang, Q.K.; Manz, C.; Wagner, J.
Zeitschriftenaufsatz
2008Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
Maier, M.; Köhler, K.; Kunzer, M.; Wiegert, J.; Liu, S.; Kaufmann, U.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2008GaInAs/ AlAsSb quantum cascade lasers: A new approach towards 3-to-5 µm semiconductor lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2008GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2008High-brightness 2.X µm semiconductor lasers
Rattunde, M.; Kelemen, M.T.; Schulz, N.; Pfahler, C.; Manz, C.; Schmitz, J.; Kaufel, G.; Wagner, J.
Konferenzbeitrag
2008High-brightness long-wavelength semiconductor disk lasers
Schulz, N.; Hopkins, J.-M.; Rattunde, M.; Burns, D.; Wagner, J.
Zeitschriftenaufsatz
2008High-peak power strain-compensated GaInAs/AlInAs quantum cascade lasers (lambda~4.6µm) based on a slightly diagonal active region design
Yang, Q.K.; Lösch, R.; Bronner, W.; Hugger, S.; Fuchs, F.; Aidam, R.; Wagner, J.
Zeitschriftenaufsatz
2008High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range
Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.
Konferenzbeitrag
2008High-power diode lasers for the 1.9 to 2.2 µm wavelength range
Kelemen, M.T.; Gilly, J.; Moritz, R.; Rattunde, M.; Schmitz, J.; Wagner, J.
Konferenzbeitrag
2008High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2008High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Zeitschriftenaufsatz
2008An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2008Infrared semiconductor lasers for DIRCM applications
Wagner, J.; Schulz, N.; Rösener, B.; Rattunde, M.; Yang, Q.; Fuchs, F.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Raab, M.; Romasev, E.; Tholl, H.D.
Konferenzbeitrag
2008Infrarot-Halbleiterlaser
Schulz, N.; Rattunde, M.; Wagner, J.; Roesener, B.
Patent
2008Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure
Bückers, C.; Thränhardt, A.; Koch, S.W.; Rattunde, Marcel; Schulz, N.; Wagner, Joachim; Hader, J.; Moloney, J.V.
Zeitschriftenaufsatz
2008OFDEX-optial stand-off detection of explosives and improvised explosive devices
Bronner, W.; Fuchs, F.; Köhler, K.; Wagner, J.; Wild, C.; Bunte, G.; Heil, M.; Krause, H.; Schnürer, F.; Fricke-Begemann, C.; Jander, P.; Noll, R.; Bühler, C.; Herbst, J.; Hildenbrand, J.; Lambrecht, A.
Konferenzbeitrag
2008Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2008Optically pumped GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2008Progress in silicon solar cell characterization with infrared imaging methods
Kasemann, M.; Kwapil, W.; Walter, B.; Giesecke, J.; Michl, B.; The, M.; Wagner, J.-M.; Bauer, J.; Schütt, A.; Carstensen, J.; Kampwerth, H.; Gundel, P.; Schubert, M.C.; Bardos, R.A.; Föll, H.; Nagel, H.; Würfel, P.; Trupke, T.; Breitenstein, O.; Warta, W.; Glunz, S.W.
Konferenzbeitrag
2008Semiconductor disk laser pumped Cr2+:chalcogenide lasers
Hempler, N.; Hopkins, J.-M.; Rösener, B.; Schulz, N.; Rattunde, M.; Wagner, J.; Roy, U.N.; Burger, A.; Burns, D.
Konferenzbeitrag
2008SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Kirste, L.; Köhler, K.; Maier, M.; Kunzer, M.; Maier, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2008Spatial variations of carrier and defect concentration in VGF GaAs:Si
Baeumler, M.; Boerner, F.; Kretzer, U.; Scheffer-Czygan, M.; Bünger, T.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2008Thermal management in 2.3-mu m semiconductor disk lasers: A finite element analysis
Kemp, A.J.; Hopkins, J.-M.; Maclean, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Burns, D.
Zeitschriftenaufsatz
2008Two-micron semiconductor disk lasers achieve higher powers
Rattunde, M.; Rösener, B.; Schulz, N.; Manz, C.; Hopkins, J.-M.; Burns, D.; Wagner, J.
Zeitschriftenaufsatz
2008Waveguide optical losses in InGaAs/AlAsSb quantum cascade laser
Revin, D.G.; Cockburn, J.W.; Menzel, S.; Yang, Q.K.; Manz, C.; Wagner, J.
Zeitschriftenaufsatz
2008Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures
Kunzer, M.; Leancu, C.-C.; Maier, M.; Köhler, K.; Kaufmann, U.; Wagner, J.
Zeitschriftenaufsatz
2008Widely tunable micro-mechanical external-cavity diode laser emitting around 2.1 µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.; Bläsi, B.; Kallweit, D.; Zappe, H.
Zeitschriftenaufsatz
2007µ-probe photoluminescence study of mid-IR quantum cascade lasers based on antimonide ternary and quaternary barriers
Vitiello, M.S.; Scamarcio, G.; Spagnolo, V.; Yang, Q.; Manz, C.; Wagner, J.; Revin, D.G.; Cockburn, J.
Zeitschriftenaufsatz
2007Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs
Wagner, J.; Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Manz, C.; Wild, C.; Köhler, K.
Zeitschriftenaufsatz
2007Effect of the cavity resonance-gain offset on the output power characteristics of GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2007Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window
Vitiello, M.S.; Scamarcio, G.; Spagnolo, V.; Yang, Q.K.; Manz, C.; Wagner, J.; Revin, D.G.; Cockburn, J.
Konferenzbeitrag
2007Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers
Vitiello, M.S.; Scarmacio, G.; Spagnolo, V.; Lops, A.; Yang, Q.K.; Manz, C.; Wagner, J.
Zeitschriftenaufsatz
2007High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wörner, E.; Wagner, J.
Konferenzbeitrag
2007High peak-power (10.5 W) GaInAs/AlGaAsSb quantum-cascade lasers emitting at lamda ~ 3.6-3.8 µm
Yang, Q.K.; Manz, C.; Bronner, W.; Lehmann, N.; Fuchs, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2007High-power, high-brightness, tunable GaSb-based VECSEL at 2.X µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Kemp, A.J.; Maclean, A.J.; Dawson, M.D.; Burns, D.
Konferenzbeitrag
2007High-speed asynchronous optical sampling for high-sensitivity detection of coherent phonons
Dekorsy, T.; Taubert, R.; Hudert, F.; Schrenk, G.; Bartels, A.; Cerna, R.; Kotaidis, A.; Plech, A.; Köhler, K.; Schmitz, J.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2007Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures
Kunzer, M.; Baeumler, M.; Köhler, K.; Leancu, C.-C.; Kaufmann, U.; Wagner, J.
Zeitschriftenaufsatz
2007Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes
Wang, C.-Y.; Cimalla, V.; Kups, T.; Röhlig, C.-C.; Stauden, T.; Ambacher, O.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2007Measurement of the internal quantum efficiency of InGaN quantum wells
Laubsch, A.; Sabathil, M.; Bruederl, G.; Wagner, J.; Strassburg, M.; Baur, E.; Braun, H.; Schwarz, U.T.; Lell, A.; Lutgen, S.; Linder, N.; Oberschmid, R.; Hahn, B.
Konferenzbeitrag
2007Micro-mechanical external-cavity laser with wide tuning range
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.; Kallweit, D.; Zappe, H.
Konferenzbeitrag
2007Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes
Kunzer, M.; Kaufmann, U.; Köhler, K.; Leancu, C.-C.; Liu, S.; Wagner, J.
Zeitschriftenaufsatz
2007Photoinduced optical anisotropy in new polymers containing azobenzene side groups
Sava, I.; Bruma, M.; Kopnick, T.; Sapich, B.; Wagner, J.; Schulz, B.; Stumpe, J.
Zeitschriftenaufsatz
2007Pulsed pumping of a 2.3m InGaAsSb semiconductor disk laser
Hempler, N.; Hopkins, J.-M.; Kemp, A.; Dawson, M.; Burns, D.; Shultz, N.; Rattunde, M.; Wagner, J.
Konferenzbeitrag
2007Pulsed pumping of semiconductor disk lasers
Hempler, N.; Hopkins, J.-M.; Kemp, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Dawson, M.D.; Burns, D.
Zeitschriftenaufsatz
2007Remote sensing of explosives using mid-infrared quantum cascade lasers
Fuchs, F.; Wild, C.; Rahmouni, Y.; Bronner, W.; Raynor, B.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2007Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regime
Schulz, N.; Rattunde, M.; Manz, C.; Kohler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.
Konferenzbeitrag
2007Resonant optical in-well pumping of an (AlGaln)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 µm
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Brauch, U.
Zeitschriftenaufsatz
2007Short-wavelength quantum cascade lasers
Yang, Quankui K.; Manz, Christian; Bronner, Wolfgang; Köhler, Klaus; Wagner, Joachim
Zeitschriftenaufsatz
2007Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Baeumler, M.; Kunzer, M.; Schmidt, R.; Liu, S.; Pletschen, W.; Schlotter, P.; Köhler, K.; Kaufmann, U.; Wagner, J.
Zeitschriftenaufsatz
2007Tunable, single-frequency, diode-pumped 2.3 µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Riis, E.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2006Above room-temperature GaInAs/Al(Ga)AsSb quantum cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2006Bound-to-contiuum GaInAs-AlAsSb quantum cascade lasers with reduced electric injection power density
Yang, Q.K.; Manz, C.; Bronner, W.; Schäuble, K.; Mann, C.; Schwarz, K.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2006Correlation of band formation and local vibrational mode structure in Ga(0.95)Al(0.05)As(1-x)N(x) with 0<= x <= 0.03
Güngerich, M.; Klar, P.J.; Heimbrodt, W.; Volz, K.; Köhler, K.; Wagner, J.; Polimeni, A.; Capizzi, M.; Alt, H.C.; Gomeniuk, Y.V.
Zeitschriftenaufsatz
2006Distributed-feedback GaInAs/AIAsSb quantum-cascade lasers operating at 300 K
Yang, Q.K.; Bronner, W.; Manz, C.; Raynor, B.; Menner, H.; Mann, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2006Fabrication of robust high-quality ORMOCER® inverse opals
Lange, B.; Wagner, J.; Zentel, R.
Zeitschriftenaufsatz
2006Functional microprism substrate for organic solar cells
Niggemann, M.; Glatthaar, M.; Lewer, P.; Müller, C.; Wagner, J.; Gombert, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section
Pfahler, C.; Eichhorn, M.; Kelemen, M.T.; Kaufel, G.; Mikulla, M.; Schmitz, J.; Wagner, J.
Zeitschriftenaufsatz
2006GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power
Rattunde, M.; Schmitz, J.; Kaufel, G.; Kelemen, M.T.; Weber, J.; Wagner, J.
Zeitschriftenaufsatz
2006GaSb-based micro-mechanical external-cavity laser emitting around 2.3µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.; Kallweit, D.; Zappe, H.
Konferenzbeitrag
2006GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power
Pfahler, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Rattunde, M.; Schmitz, J.; Wagner, J.
Zeitschriftenaufsatz
2006GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Konferenzbeitrag
2006High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Zeitschriftenaufsatz
2006High power GaSb-based optically pumped VECSEL at 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.
Konferenzbeitrag
2006High-peak-power pulsed operation of 2.0 µm (AlGaIn) (AsSb) quantum-well ridge waveguide diode lasers
Eichhorn, M.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.
Zeitschriftenaufsatz
2006High-power 1.9-µm diode laser arrays with reduced far field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.
Zeitschriftenaufsatz
2006High-power diode laser arrays emitting at 2 µm with reduced far-field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.; Pfahler, C.
Konferenzbeitrag
2006III-Sb-based type-I QW diode lasers
Rattunde, M.; Schmitz, J.; Mermelstein, C.; Kiefer, R.; Wagner, J.
Aufsatz in Buch
2006Influence of injector doping concentration on the performance of InP-based quantum cascade lasers
Mann, C.; Yang, Q.K.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2006Mg doping profile in III-N light emitting diodes in close proximity to the active region
Köhler, K.; Perona, A.; Maier, M.; Wiegert, J.; Kunzer, M.; Wagner, J.
Zeitschriftenaufsatz
2006Molecular beam epitaxy and doping of AlN at high growth temperatures
Boger, R.; Fiederle, M.; Kirste, L.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
2006New poly(amide-imide)s containing cinnamoyl and azobenzene groups
Hamciuc, E.; Sava, I.; Bruma, M.; Köpnick, T.; Schulz, B.; Sapich, B.; Wagner, J.; Stumpe, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Zeitschriftenaufsatz
2006Room-temperature short-wavelength (Lambda about 3.7-3.9 µm) GaInAs/AlAsSb quantum-cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2006Spectral tuning and mode competition in quantum cascade lasers studied by time-resolved Fourier transform spectroscopy
Fuchs, F.; Kirn, B.; Mann, C.; Yang, Q.K.; Bronner, W.; Raynor, B.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2006Tunable, single-frequency, diode-pumped 2.3µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2006Widely tunable GaSb-based external cavity diode laser emitting around 2.3 µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Zappe, H.P.; Wagner, J.
Zeitschriftenaufsatz
2005(AlGaIn)(AsSb) quantum well diode lasers with improved beam quality
Wagner, J.; Geerlings, E.; Kaufel, G.; Kelemen, M.T.; Manz, C.; Pfahler, C.; Rattunde, M.; Schmitz, J.
Konferenzbeitrag
2005Assessment of layer composition and thickness in AlGaN/GaN HEMT structures by spectroscopic ellipsometry
Baeumler, M.; Müller, S.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2005Bonding of nitrogen in dilute InAsN and high In-content GaInAsN
Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2005Continuous-wave operation of GaInAs/AlGaAsSb quantum cascade lasers
Yang, Q.K.; Bronner, W.; Manz, C.; Moritz, R.; Mann, C.; Kaufel, G.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2005Control of the Mg doping profile in III-N light-emitting diodes and its effect on the elecroluminescence efficiency
Köhler, K.; Stephan, T.; Perona, A.; Wiegert, J.; Maier, M.; Kunzer, M.; Wagner, J.
Zeitschriftenaufsatz
2005Einmodige Quantenkaskadenlaser für Anwendungen in der Spurenanalytik
Mann, C.; Yang, Q.K.; Bronner, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2005GaInAs/AlAsSb quantum-cascade lasers operating up to 400 K
Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Kirste, L.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2005GaInAs/AlGaAsSb quantum-cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Kirste, L.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2005GaSb-based 1.9-2.4 µm quantum-well diode lasers with low-beam divergence
Rattunde, M.; Geerlings, E.; Schmitz, J.; Kaufel, G.; Weber, J.; Mikulla, M.; Wagner, J.
Konferenzbeitrag
2005Growth-temperature-dependent bandgap of MBE-grown GaInNAs epilayers lattice matched to GaAs
Pavelescu, E.-M.; Wagner, J.; Kudrawiec, R.; Dumitrescu, M.; Konttinen, J.; Dhaka, V.D.S.; Lemmetyinen, H.; Pessa, M.
Konferenzbeitrag
2005Halbleiterlaser zur Lichtemission im MIR-Bereich
Mermelstein, C.; Wagner, J.; Schmitz, J.
Patent
2005Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: A quest for better doping efficiency
Desnica-Frankovi, I.D.; Desnica, U.V.; Furi, K.; Wagner, J.; Haynes, T.E.
Zeitschriftenaufsatz
2005High duty-cycle (>= 50%) operation of GalnAs/Al(Ga)AsSb quantum cascade lasers
Bronner, W.; Yang, Q.; Manz, C.; Kaufel, G.; Mann, C.; Kohler, K.; Wagner, J.
Konferenzbeitrag
2005High duty-cycle (>= 50%) operation of GaInAs/Al(Ga)AsSb quantum cascade lasers
Bronner, W.; Yang, Q.K.; Manz, C.; Kaufel, G.; Mann, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2005High-brightness GaSb-based tapered diode-lasers emitting at 1.9 µm
Pfahler, C.; Manz, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Wagner, J.
Konferenzbeitrag
2005High-power diode laser arrays at 2 µm for materials processing
Kelemen, M.T.; Weber, J.; Rattunde, M.; Pfahler, C.; Kaufel, G.; Moritz, R.; Manz, C.; Mikulla, M.; Wagner, J.
Konferenzbeitrag
2005High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
Manz, C.; Yang, Q.K.; Köhler, K.; Maier, M.; Kirste, L.; Wagner, J.; Send, W.; Gerthsen, D.
Zeitschriftenaufsatz
2005Low-threshold, low beam divergence GaSb-based quantum-well diode-lasers emitting in the 1.9 to 2.4 µm wavelength range
Rattunde, M.; Geerlings, E.; Hülsmann, A.; Schmitz, J.; Kaufel, G.; Wagner, J.
Konferenzbeitrag
2005MBE growth of mid-IR type-II interband laser diodes
Schmitz, J.; Mermelstein, C.; Kiefer, R.; Walther, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2005Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing
Pavelescu, E.-M.; Wagner, J.; Komsa, H.-P.; Rantala, T.; Dumitrescu, M.; Pessa, M.
Zeitschriftenaufsatz
2005Quantum cascade lasers: Valuable new tools for laser spectroscopy
Mann, C.; Wagner, J.; Tauer, U.; Braun, M.
Zeitschriftenaufsatz
2005Spatial electron distribution and its origin in the nanoporous TiO2 network of a dye solar cell
Würfel, U.; Wagner, J.; Hinsch, A.
Zeitschriftenaufsatz
2005Tunable laser diode system for noninvasive blood glucose measurements
Olesberg, J.T.; Arnold, M.A.; Mermelstein, C.; Schmitz, J.; Wagner, J.
Zeitschriftenaufsatz
2005Tunable laser diode system for noninvasive blood glucose measurements
Olesberg, J.; Arnold, M.; Mermelstein, C.; Schmitz, J.; Wagner, J.
Konferenzbeitrag
2005Untersuchung eines diodengepumpten Faserverstärkers mit Emission bei 2 µm
Eichhorn, M.
: Wagner, J. (Prüfer)
Dissertation
2005Violet-emitting diode lasers on low defect density GaN templates
Sommer, F.; Vollrath, F.; Kunzer, M.; Pletschen, W.; Müller, S.; Köhler, K.; Schlotter, P.; Wagner, J.; Weimar, A.; Haerle, V.
Zeitschriftenaufsatz
2004Automated testing systems for rotor blades
Wagner, J.; Aderhold, J.
Konferenzbeitrag
2004Comprehensive analysis of the internal losses in 2.0 µm (AlGaIn)(AsSb) quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Zeitschriftenaufsatz
2004Elucidation of the emission red-shift with increasing growth temperature of MBE-grown GaInNAs/GaAs quantum wells
Pavelescu, E.-M.; Dumitrescu, M.; Jouhti, T.; Wagner, J.; Klar, P.J.; Karirinne, S.; Pessa, M.
Zeitschriftenaufsatz, Konferenzbeitrag
2004Epitaxy and characterisation of dilute III-As(1-y)N(y) on GaAs and InP
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, M.; Kirste, L.
Konferenzbeitrag, Zeitschriftenaufsatz
2004GaSb-based 2.3 µm quantum-well diode-lasers with low beam divergence
Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.
Konferenzbeitrag
2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.
Konferenzbeitrag
2004High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9µm
Pfahler, C.; Manz, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Wagner, J.
Konferenzbeitrag
2004III-N based short-wavelength LEDs, LUCO-LEDs and lasers
Sommer, F.; Stephan, T.; Vollrath, F.; Köhler, K.; Kunzer, M.; Müller, S.; Schlotter, P.; Pletschen, W.; Kaufmann, U.; Wagner, J.
Zeitschriftenaufsatz
2004Influence of Mg doping profile on the electroluminescence properties of GaInN multiple quantum well light emitting diodes
Stephan, T.; Köhler, K.; Maier, M.; Kunzer, M.; Schlotter, P.; Wagner, J.
Konferenzbeitrag
2004Infrared semiconductor lasers for sensing and diagnostics
Wagner, J.; Mann, C.; Rattunde, M.; Weimann, G.
Zeitschriftenaufsatz
2004Interband type-II miniband-to-bound state diode lasers for the midinfrared
Mermelstein, C.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J.
Zeitschriftenaufsatz
2004Modellierung von Farbstoffsolarzellen mit polymerem Lochleiter
Wagner, J.
Dissertation
2004New carbazole-based polymers for dye solar cells with hole-conducting polymer
Wagner, J.; Pielichowski, J.; Hinsch, A.; Pielichowski, K.; Bogdal, D.; Pajda, M.; Kurek, S.S.; Burczyk, A.
Zeitschriftenaufsatz
2004Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs
Kudrawiec, R.; Pavelescu, E.-M.; Wagner, J.; Sek, G.; Misiewicz, J.; Dumitrescu, M.; Konttinen, J.; Gheorghiu, A.; Pessa, M.
Zeitschriftenaufsatz
2004The realization of long-wavelength (lambda <= 2.3 µm) Ga(1-x)In(x)As(1-y)N(y) quantum wells on InP by molecular-beam epitaxy
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, T.; Kirste, L.
Zeitschriftenaufsatz
2004Resonant Raman scattering from N-doped and Si-doped diamondlike amorphous carbon films
Yoshikawa, M.; Iwagami, K.; Matsunobe, T.; Morita, N.; Yamaguchi, Y.; Izumi, Y.; Wagner, J.
Zeitschriftenaufsatz
2004Room-temperature external cavity GaSb-based diode laser around 2.13 µm
Jacobs, U.H.; Scholle, K.; Heumann, E.; Huber, G.; Rattunde, M.; Wagner, J.
Zeitschriftenaufsatz
2004Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2003Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2003Compound Semiconductors 2002, ISCS
: Ilegems, M.; Weimann, G.; Wagner, J.
Tagungsband
2003Dilute group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and realization of long wavelength (2.3 µm) GaInAsN QWs on InP
Serries, D.; Geppert, T.; Köhler, K.; Ganser, P.; Wagner, J.
Konferenzbeitrag
2003Electroluminescence efficiency of InGaN light emitting diodes: Dependence on AlGaN:Mg electron blocking layer width and Mg doping profile
Stephan, T.; Köhler, K.; Kunzer, M.; Schlotter, P.; Wagner, J.
Zeitschriftenaufsatz
2003Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2003Gain and internal losses in GaSb-based 2 µm quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Konferenzbeitrag
2003Modulation of the electronic properties of GaN films by surface acoustic waves
Camacho, J.; Santos, P.V.; Alsina, F.; Ramsteiner, M.; Ploog, K.H.; Cantarero, A.; Obloh, H.; Wagner, J.
Zeitschriftenaufsatz
2003Optical properties of ordered arrays of large latex particles
Goldenberg, L.M.; Wagner, J.; Stumpe, J.; Paulke, B.-R.; Görnitz, E.
Zeitschriftenaufsatz, Konferenzbeitrag
2003Preparation of ordered arrays of layer-by-layer modified latex particles
Goldenberg, L.M.; Jung, B.-D.; Wagner, J.; Stumpe, J.; Paulke, B.-R.; Görnitz, E.
Zeitschriftenaufsatz
2003Quantitative assessment of Al-to-N bonding in dilute Al(0.33)Ga(0.67)As(1-y)N(y)
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2003Temperature sensitivity of high power GaSb based 2 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Konferenzbeitrag
2003Violet and blue laser diodes make strides
Haerle, V.; Lell, A.; Wagner, J.
Zeitschriftenaufsatz
2002(AlGaIn)N ultraviolet LED chips and their use in tri-phosphor luminescence conversion white LEDs
Wagner, J.; Kaufmann, U.; Köhler, K.; Kunzer, M.; Pletschen, W.; Obloh, H.; Schlotter, P.; Stephan, T.; Walcher, H.; Ellens, A.; Rossner, W.; Kobusch, M.
Konferenzbeitrag
20021.9-µm and 2.0-µm laser diode pumping of Cr(2+):ZnSe and Cr(2+):CdMnTe
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Zeitschriftenaufsatz
2002Band-edge aligned quaternary carrier barriers in InGaAs-AlGaAs high-power diode lasers for improved high-temperature operation
Wiedmann, N.; Schmitz, J.; Boucke, K.; Herres, N.; Wagner, J.; Mikulla, M.; Poprawe, R.; Weimann, G.
Zeitschriftenaufsatz
2002Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Zeitschriftenaufsatz
2002Diffraction properties of ordered arrays of large latex particles
Goldenberg, L.M.; Wagner, J.; Stumpe, J.; Paulke, B.-R.; Görnitz, E.
Zeitschriftenaufsatz
2002Efficient 100 mW Cr(2+): ZnSe laser pumped by a 1.9 µm laser diode
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Konferenzbeitrag
2002High in content GaInAsN on InP: Composition dependent band gap energy and luminescence properties
Serries, D.; Geppert, T.; Ganser, P.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2002Importance of nonradiative recombination process in violet UV InGaN light emmitting diodes
Stephan, T.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Obloh, H.; Müller, S.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2002Improvement of lambda ~ 5 µm quantum cascade lasers by blocking barriers in the active regions
Yang, Q.K.; Mann, C.; Fuchs, F.; Kiefer, R.; Köhler, K.; Rollbühler, N.; Schneider, H.; Wagner, J.
Zeitschriftenaufsatz
2002Ordered arrays of large latex particles organised by vertical deposition
Goldenberg, L.M.; Wagner, J.; Stumpe, J.; Paulke, B.-R.; Gornitz, E
Zeitschriftenaufsatz
2002Ordered arrays of large latex particles organized by vertical deposition
Goldenberg, L.M.; Wagner, J.; Stumpe, J.; Paulke, B.-R.; Görnitz, E.
Zeitschriftenaufsatz
2002Physics and applications of III-Sb based type-I QW diode lasers
Mermelstein, C.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J.
Konferenzbeitrag
2002Preferential formation of Al-N bonds in low N-content AlGaAsN
Geppert, T.; Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2002Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.
Zeitschriftenaufsatz
2002Sb-based mid-infrared diode lasers
Mermelstein, C.; Rattunde, M.; Schmitz, J.; Simanowski, S.; Kiefer, R.; Walther, M.; Wagner, J.
Konferenzbeitrag
2002Simple method for the preparation of colloidal particle monolayers at the water/alkane interface
Goldenberg, L.M.; Wagner, J.; Stumpe, J.; Paulke, B.-R.; Görnitz, E.
Zeitschriftenaufsatz
2002Single chip white LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Zeitschriftenaufsatz
2002X-Ray determination of the composition of partially strained group-III nitride layers using the extended bond method
Herres, N.; Kirste, L.; Obloh, H.; Köhler, K.; Wagner, J.; Koidl, P.
Zeitschriftenaufsatz
2001Carbon-doped MOCVD InP is semi-insulating up to 700°C
Newman, R.C.; Davidson, B.R.; Wagner, J.; Sangster, M.J.L.; Leigh, R.S.
Zeitschriftenaufsatz
2001Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.; Köhler, K.
Zeitschriftenaufsatz
2001Edge and vertical surface emitting lasers around 2.0-2.5 mum and their applications: Discussion
Wagner, J.; Alibert, C.
Zeitschriftenaufsatz
2001Growth and layer structure optimization of 2.26 µm (AlGaIn)(AsSb) diode lasers for room temperature operation
Simanowski, S.; Mermelstein, C.; Walther, M.; Herres, N.; Kiefer, R.; Rattunde, M.; Schmitz, J.; Wagner, J.; Weimann, G.
Zeitschriftenaufsatz
2001Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J.
Zeitschriftenaufsatz
2001N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Herres, N.
Zeitschriftenaufsatz
2001Power efficiency of GaSb based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Fuchs, F.; Walther, M.; Wagner, J.
Konferenzbeitrag
2001The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides
Stath, N.; Haerle, V.; Wagner, J.
Zeitschriftenaufsatz
2001Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
Rattunde, M.; Mermelstein, C.; Simanowski, S.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Walther, M.; Wagner, J.
Konferenzbeitrag
2001Thermal stability of semi-insulating InP epilayers: The roles of dicarbon and carbon-hydrogen centers
Newman, R.; Davidson, B.; Wagner, J.; Sangster, M.; Leigh, R.
Zeitschriftenaufsatz
2001Ultraviolet pumped tricolor phosphor blend white emitting LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Schmidt, R.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Zeitschriftenaufsatz
20002 µm room-temperature diode lasers for Co(2)-detection
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J.; Beyer, T.; Lambrecht, A.
Konferenzbeitrag
2000Anodic oxidation of GaSb in Acid-glycol-water electrolytes
Sulima, O.; Bett, A.; Wagner, J.
Zeitschriftenaufsatz
2000GaAsN interband transitions involving localized and extended states probed by resonant Raman scattering and spectrosopic ellipsometry
Wagner, J.; Köhler, K.; Ganser, P.; Herres, N.
Zeitschriftenaufsatz
2000Group III-Nitride heterostructures: From materials research to devices
Wagner, J.; Obloh, H.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Kiefer, R.; Kaufmann, U.; Köhler, K.
Konferenzbeitrag
2000Growth of metastable GaAsSb for InP-based type-II emitters
Peter, M.; Serries, D.; Herres, N.; Fuchs, F.; Kiefer, R.; Winkler, K.; Bachem, K.-H.; Wagner, J.
Konferenzbeitrag
2000Optimization of InGaN/GaN quantum wells for violet GaN/InGaN/AlGaN LEDs
Ramakrishnan, A.; Kunzer, M.; Schlotter, P.; Obloh, H.; Pletschen, W.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2000Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
Ramakrishnan, A.; Wagner, J.; Kunzer, M.; Obloh, H.; Köhler, K.
Zeitschriftenaufsatz
2000Raman and dielectric function spectra of strained GaAs(1-x)Sb(x) layers on InP
Serries, D.; Peter, M.; Herres, N.; Winkler, K.; Wagner, J.
Zeitschriftenaufsatz
2000Resonant Raman scattering from buried Al(x)Ga(1-x)N (x < = 0.17) layers in (Al,Ga,In)N heterostructures
Yoshikawa, M.; Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.
Zeitschriftenaufsatz
2000Room temperature cw operation of GaInAsSb/AlGaAsSb quantum well lasers emitting in the 2.2 to 2.3 µm wavelength range
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.
Konferenzbeitrag
2000Room-temperature cw Operation of GaInAsSb/AlGaAsSb Quantum Well Diode Lasers emitting beyond 2 µm
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.
Konferenzbeitrag
2000Room-temperature low-threshold low-loss continous-wave operation of 2.26 µm GaInAsSb/AlGaAsSb quantum-well laser diodes
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.
Zeitschriftenaufsatz
2000Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Köhler, K.; Johs, B.
Konferenzbeitrag
2000Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3.-2.7. µm laser structures
Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G.
Zeitschriftenaufsatz
1999Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mu m laser structures on GaSb substrates
Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G.
Zeitschriftenaufsatz
1999Band gaps and band offsets in strained GaAs(1-y)Sb(y) on InP grown by metalorganic chemical vapor deposition
Peter, M.; Herres, N.; Fuchs, F.; Winkler, K.; Bachem, K.H.; Wagner, J.
Zeitschriftenaufsatz
1999Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U.
Zeitschriftenaufsatz
1999Composition dependence of the band gap energy of In(x)Ga(1-x)N layers on GaN(x < = 0.15) grown by metal-organic chemical vapor deposition
Wagner, J.; Ramakrishnan, A.; Behr, D.; Maier, M.; Herres, N.; Kunzer, M.; Obloh, H.; Bachem, K.H.
Konferenzbeitrag
1999Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M.
Zeitschriftenaufsatz
1999Group III-nitride based blue emitters
Obloh, H.; Bachem, K.H.; Behr, D.; Kaufmann, U.; Kunzer, M.; Ramakrishnan, A.; Schlotter, P.; Seelmann-Eggebert, M.; Wagner, J.
Aufsatz in Buch
1999High resolution EL2 and resistivity topography of Si GaAs wafers
Wickert, M.; Stibal, R.; Hiesinger, P.; Jantz, W.; Wagner, J.; Jurisch, M.; Kretzer, U.; Weinert, B.
Konferenzbeitrag
1999Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate
Peter, M.; Kiefer, R.; Fuchs, F.; Herres, N.; Winkler, K.; Bachem, K.H.; Wagner, J.
Zeitschriftenaufsatz
1999Luminescence imaging - a well-established technique to study material- and device-related problems
Baeumler, M.; Fitz, C.,; Weinberg, U.; Wagner, J.; Jantz, W.
Zeitschriftenaufsatz
1999Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides
Heppel, S.; Wirth, R.; Off, J.; Scholz, F.; Hangleiter, A.; Obloh, H.; Wagner, J.; Kirchner, C.; Kamp, M.
Zeitschriftenaufsatz
1999Optical switching in a superconductor-semiconductor-superconductor Josephson junction
Bastian, G.; Göbel, E.O.; Schmitz, J.; Walther, M.; Wagner, J.
Zeitschriftenaufsatz
1999Raman scattering observations and ab initio models of dicarbon complexes in AlAS
Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R.
Zeitschriftenaufsatz
1999Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Maier, M.; Bachem, K.H.
Konferenzbeitrag
1998Di-carbon complexes in AlAs and GaAs
Latham, C.D.; Jones, R.; Wagner, J.; Davidson, B.R.; Newman, R.C.; Button, C.C.; Briddon, P.R.; Öberg, S.
Zeitschriftenaufsatz
1998Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H.
Zeitschriftenaufsatz
1998InAs/(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formation
Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Serries, D.; Grietens, B.; Nemeth, S.; Hoof, C. van; Borghs, G.
Zeitschriftenaufsatz
1998Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In(0.53)Ga(0.47)As
Wagner, J.; Peter, M.; Winkler, K.; Bachem, K.H.
Zeitschriftenaufsatz
1998MOCVD growth of (Ga(1-x)In(x)As-GaAs(1-y)Sb(y))superlattices on InP showing type-II emission at wavelengths beyond 2 mu m
Peter, M.; Winkler, K.; Herres, N.; Fuchs, F.; Müller, S.; Bachem, K.H.; Wagner, J.
Konferenzbeitrag
1998Optical and electrical properties of InAs/Ga(1-x)In(x)Sb photodiodes for infrared detection
Fuchs, F.; Pletschen, W.; Weimar, U.; Schmitz, J.; Walther, M.; Wagner, J.; Koidl, P.
Konferenzbeitrag
1998Sistemes D'Ajut a la Mobilitat
Schraft, R.D.; Wagner, J.; Schaeffer, C.
Konferenzbeitrag
1998Spectroscopic ellipsometry characterization of (InGa)N on GaN
Wagner, J.; Ramakrishnan, A.; Behr, D.; Obloh, H.; Kunzer, M.; Bachem, K.H.
Zeitschriftenaufsatz
1998Spectroscopic ellipsometry for characterization of InAs/Ga(1-x)In(x)Sb superlattices
Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Walther, M.
Zeitschriftenaufsatz
1997Di-Carbon defects in annealed highly carbon doped GaAs
Wagner, J.; Newman, R.C.; Davidson, B.R.; Westwater, S.P.; Bullough, T.J.; Joyce, T.B.; Latham, C.D.; Jones, R.; Öberg, S.
Zeitschriftenaufsatz
1997ECR-plasma deposited oxygen-free SiN(x) films for low- and high-reflectivity coatings for GaAs based devices
Sah, R.E.; Weimar, U.; Baumann, H.; Wagner, J.; Kiefer, R.; Müller, S.
Konferenzbeitrag
1997Epitaxial overgrowth of 13C diamond films on diamond substrates predamaged by ion implantation
Behr, D.; Locher, R.; Wagner, J.; Koidl, P.; Richter, V.; Kalish, R.
Zeitschriftenaufsatz
1997Farbaufnahmesystem
Wagner, J.; Bloss, H.; Bauer, N.; Boebel, F.G.
Patent
1997Global Engineering Networks. Eine Chance für kleine und mittelständische Unternehmen
Wagner, J.
Konferenzbeitrag
1997Growth and characterization of InAs/AlSb/GaSb heterostructures
Fuchs, F.; Wagner, J.; Schmitz, J.; Herres, N.; Koidl, P.
Aufsatz in Buch
1997High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
Fuchs, F.; Weimer, U.; Pletschen, W.; Schmitz, J.; Ahlswede, E.; Walther, M.; Wagner, J.; Koidl, P.
Zeitschriftenaufsatz
1997InAs/(GaIn)Sb superlattices for infrared detection
Wagner, J.; Fuchs, F.; Schmitz, J.; Pletschen, W.; Weimar, U.; Herres, N.; Walther, M.; Koidl, P.
Konferenzbeitrag
1997InAs/AlSb/GaSb heterostructures
Wagner, J.; Schmitz, J.; Fuchs, F.; Obloh, H.; Herres, N.; Koidl, P.
Aufsatz in Buch
1997Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Zeitschriftenaufsatz
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Konferenzbeitrag
1997Structural and optical properties of AlGaN/GaN quantum well structures grown by MOCVD on sapphire
Niebuhr, R.; Bachem, K.H.; Behr, D.; Hoffmann, C.; Kaufmann, U.; Lu, Y.; Santic, B.; Wagner, J.; Arlery, M.; Rouviere, J.L.; Jürgensen, H.
Konferenzbeitrag
1997Study of composition and critical-point broadening in InAs/Ga(1-x)In(x)Sb superlattices using spectroscopic ellipsometry
Wagner, J.; Schmitz, J.; Herres, N.; Tränkle, G.; Koidl, P.
Zeitschriftenaufsatz
1996Broadening of interband resonances in thin AlAs barriers embedded in GaAs
Weimar, U.; Wagner, J.; Gaymann, A.; Köhler, K.
Zeitschriftenaufsatz
1996Critical point broadening in the dielectric function of thin AlAs barriers on GaAs
Wagner, J.; Weimar, U.; Gaymann, A.; Köhler, K.
Konferenzbeitrag
1996Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices
Herres, N.; Fuchs, F.; Schmitz, J.; Pavlov, K.M.; Wagner, J.; Ralston, J.D.; Koidl, P.; Gadaleta, C.; Scamarcio, G.
Zeitschriftenaufsatz
1996Influence of interdiffusion processes on optical and structural properties of pseudomorphic In(0.35)Ga(0.65)As/GaAs multiple quantum well structures
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Rothemund, W.; Ralston, J.D.
Zeitschriftenaufsatz
1996Infrared Raman scattering as a sensitive probe for the thermal conductivity of chemical vapor deposited diamond films
Wörner, E.; Wagner, J.; Müller-Sebert, W.; Wild, C.; Koidl, P.
Zeitschriftenaufsatz
1996Intersubband Raman scattering in InAs/AlSb quantum wells
Wagner, J.; Schmitz, J.; Richards, D.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1996Isolated hydrogen molecules in GaAS
Vetterhöffer, J.; Wagner, J.; Weber, J.
Zeitschriftenaufsatz
1996Landau damped intersubband plasmons in InAs/AlSb quantum wells
Richards, D.; Wagner, J.; Schmitz, J.
Zeitschriftenaufsatz
1996Lattice locations of silicon atoms in delta-doped layers in GaAs at high doping concentrations
Newman, R.C.; Ashwin, M.J.; Fahy, M.R.; Hart, L.; Holmes, S.N.; Roberts, C.; Zhang, X.; Wagner, J.
Zeitschriftenaufsatz
1996Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures
Wagner, J.; Richards, D.
Aufsatz in Buch
1996Raman spectroscopy of doping sheets and heterointerfaces in III-V semiconductor structures
Wagner, J.; Schmitz, J.; Newman, R.C.; Roberts, C.
Zeitschriftenaufsatz
1996Resonant multi-LO-phonon Raman scattering in hexagonal GaN
Behr, D.; Wagner, J.; Niebuhr, R.; Merz, C.; Bachem, K.H.; Amano, H.; Akasaki, I.
Konferenzbeitrag
1996Resonant raman scattering in hexagonal GaN
Behr, D.; Wagner, J.; Schneider, J.; Amano, H.; Akasaki, I.
Zeitschriftenaufsatz
1996Structural characterization of InAs/(GaIn)Sb superlattices for IR optoelectronics
Wagner, J.; Schmitz, J.; Fuchs, F.; Weimar, U.; Herres, N.; Tränkle, G.; Koidl, P.
Konferenzbeitrag
1996Temperature measurement at RTP facilities. An overview
Wagner, J.; Böbel, F.G.
Konferenzbeitrag
1995Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs
Däweritz, L.; Hey, R.; Ramsteiner, M.; Wagner, J.; Maier, M.; Kostial, H.; Behrend, J.; Höricke, M.
Zeitschriftenaufsatz
1995Boron doped diamond films: electrical and optical characterization and the effect of compensating nitrogen
Locher, R.; Wagner, J.; Fuchs, F.; Wild, C.; Hiesinger, P.; Gonon, P.; Koidl, P.
Zeitschriftenaufsatz
1995Compositional and structural analysis of AlSb (As) tunneling barriers in InAs/AlSb (As) / GaSb resonant interband-tunneling structures
Wagner, J.; Schmitz, J.; Obloh, H.; Koidl, P.
Zeitschriftenaufsatz
1995Determination of the bonding of carbon acceptors in InxGa1-xAs for x smallr than 0.1
Pritchard, R.E.; Newman, R.C.; Wagner, J.; Maier, M.; Mazuelas, A.; Lane, P.A.; Martin, T.; Whitehouse, C.R.; Ploog, K.
Zeitschriftenaufsatz
1995Dynamics of the H-CAs complex in GaAs determined from Raman measurements
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Zeitschriftenaufsatz
1995The dynamics of the H-CAs complex in GaAs studied by raman spectroscopy
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Konferenzbeitrag
1995Fermi-edge singularity in (AlGaIn)As quantum systems
Wagner, J.
Aufsatz in Buch
1995High carbon doping of Ga1-xInxAs /x about 0.01/ grown by molecular beam epitaxy
Mazuelas, A.; Maier, M.; Wagner, J.; Fischer, A.; Trampert, A.; Ploog, K.
Zeitschriftenaufsatz
1995Impurity free selective interdiffusion of pseudomorphic InyGa1-yAs/GaAs multiple quantum well laser and modulator structures
Bürkner, S.; Larkins, E.C.; Baeumler, M.; Wagner, J.; Rothemund, W.; Flemig, G.; Ralston, J.D.
Zeitschriftenaufsatz
1995In situ real time monitoring of film thickness and temperature during epitaxial growth by using Reflexion Supported Pyrometric Interferometry (RSPI)
Böbel, F.G.; Möller, H.; Hertel, B.; Märitz, J.; Wagner, J.; Chow, P.
Konferenzbeitrag
1995InAs/GaSb Superlattices for infrared detection: Structural characterization and optical Properties
Wagner, J.; Fuchs, F.; Herres, N.; Schmitz, J.; Koidl, P.
Aufsatz in Buch
1995InAs/GaSb superlattices with different interfaces studied by resonant raman scattering ans ellipsometry
Behr, D.; Wagner, J.; Ralston, J.D.; Koidl, P.; Ramsteiner, M.; Schrottke, L.; Jungk, G.
Konferenzbeitrag
1995Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering
Wagner, J.; Schmitz, J.; Fuchs, F.; Ralston, J.D.; Koidl, P.; Richards, D.
Zeitschriftenaufsatz
1995A novel pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics
Peter, M.; Forker, J.; Winkler, K.; Bachem, K.H.; Wagner, J.
Zeitschriftenaufsatz
1995Optical and electrical characterization of boron-doped diamond films
Locher, R.; Wagner, J.; Fuchs, F.; Maier, M.; Gonon, P.; Koidl, P.
Zeitschriftenaufsatz
1995Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy
Schmitz, J.; Wagner, J.; Fuchs, F.; Herres, N.; Koidl, P.; Ralston, J.D.
Zeitschriftenaufsatz
1995Raman scattering by folded longitudinal acoustic phonons in InAs/GaSb superlattices - Resonant enhancement an effect of interfacial bonding
Wagner, J.; Schmitz, J.; Herres, N.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1995Raman spectroscopic study of the H-CAs complex in epitaxial AlAs
Wagner, J.; Pritchard, R.E.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.; Button, C.; Roberts, J.S.
Zeitschriftenaufsatz
1995A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers
Alvarez, A.-L.; Calle, F.; Sacedon, A.; Calleja, E.; Munoz, E.; Wagner, J.; Maier, M.; Mazuelas, A.; Ploog, K.H.
Zeitschriftenaufsatz
1995Rapid Prototyping: An Approach Beyond Manufacturing Technology
Steger, W.; Wagner, J.
Konferenzbeitrag
1995Realization and modeling of a pseudomorphic (GaAs(1-x)Sb(x)-In(y)Ga(1-y)As)/GaAs bilayer-quantum well
Peter, M.; Winkler, K.; Maier, N.; Herres, N.; Wagner, J.; Fekete, D.; Bachem, K.H.; Richards, D.
Zeitschriftenaufsatz
1995Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III-V quantum-well structures
Sah, R.E.; Ralston, J.D.; Eichin, G.; Dischler, B.; Rothemund, W.; Wagner, J.; Larkins, E.C.; Baumann, H.
Zeitschriftenaufsatz
1995Silicon incorporation in GaAs. From delta-doping to monolayer insertion
Wagner, J.; Newman, R.C.; Roberts, C.
Zeitschriftenaufsatz
1995Surface influence on the doping dependence of the E1 plus Delta1 critical points of GaAs - electric field and inpurity unscreening effect
Kuball, M.; Kelly, M.K.; Santos, P.V.; Cardona, M.; Köhler, K.; Wagner, J.
Konferenzbeitrag
1995Wire-Like ordering of Si dopant atoms on GaAs-001- vincinal surgaces studied by raman scattering
Ramsteiner, M.; Däweritz, L.; Hey, R.; Jungk, G.; Wagner, J.
Konferenzbeitrag
1994The assignment of the 78/203meV double acceptor in GaAs to BAs impurity antisite centres.
Newman, R.C.; Davidson, B.R.; Addinall, R.; Murray, R.; Emmert, J.W.; Wagner, J.; Götz, W.; Roos, G.; Pensl, G.
Zeitschriftenaufsatz
1994Bonding of H-CAs pairs in Al(x)Ga(1-x)As alloys
Pritchard, R.E.; Newman, R.C.; Wagner, J.; Fuchs, F.; Jones, R.; Öberg, S.
Zeitschriftenaufsatz
1994Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Flemig, G.; Rothemund, W.; Ralston, J.D.
Konferenzbeitrag
1994Doping dependence of the E1 and E1 plus Delta1 critical points in highly doped n- and p-type GaAs: Importance of surface band bending and depletion
Kuball, M.; Kelly, M.K.; Cardona, M.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
1994Excitonic enhancement of the Fermi edge singularity and recombination kinetics of photogenerated electrons in p-type delta-doped GaAs-Be/AlxGa1-xAs double-heterostructures.
Wagner, J.; Richards, D.; Schneider, H.; Fischer, A.; Ploog, K.
Zeitschriftenaufsatz
1994Improved structural and transport properties of MBE-grown InAs/AlSb QW's with residual As incorporation eliminated via valved cracker
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Hiesinger, P.; Koidl, P.; Ralston, J.D.
Konferenzbeitrag
1994Incorporation of Be into InxGa1-xAs /0.004 equal or smaller than x equal or smaller than 0.17/ studied by photoluminescence and resonant Raman spectroscopy of local vibrational modes.
Alvarez, A.L.; Wagner, J.; Calle, F.; Maier, M.; Gutierrez, G.; Sacedon, A.; Calleja, E.; Munoz, E.
Zeitschriftenaufsatz
1994Incorporation of silicon in -311-A and -111-A GaAs grown by molecular beam epitaxy.
Wagner, J.; Ramsteiner, M.; Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Braun, W.; Ploog, K.
Zeitschriftenaufsatz
1994Infrared and Raman studies of carbon impurities in highly doped MBE AlAs-C.
Davidson, B.R.; Newman, R.C.; Pritchard, R.E.; Robbie, D.A.; Sangster, M.J.L.; Wagner, J.; Fischer, A.; Ploog, K.
Zeitschriftenaufsatz
1994Interface characterization of InAs/AlSb heterostructures by far infrared optical spectroscopy
Fuchs, F.; Schmitz, J.; Schwarz, K.; Wagner, J.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1994Interface formation and surface Fermi level pinning in GaSb and InSb grown on GaAs by molecular beam epitaxy
Wagner, J.; Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.
Konferenzbeitrag
1994Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular-beam epitaxy
Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1994A local vibrational mode investigation of p-type Si-doped GaAs
Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Wagner, J.; Robbie, D.A.; Silier, I.; Sangster, M.J.L.; Bauser, E.; Braun, W.; Ploog, K.
Zeitschriftenaufsatz
1994Magneto-photoluminescence excitation spectroscopy in a centre Si delta-doped GaAs/Al0.33Ga0.67As double heterostructure.
Wagner, J.; Calleja, J.M.; Mestres, N.; Richards, D.; Fischer, A.; Ploog, K.
Zeitschriftenaufsatz
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Konferenzbeitrag
1994MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R.
Konferenzbeitrag
1994Objektorientierte Benutzungsschnittstellen
Bullinger, H.-J.; Wagner, J.
Zeitschriftenaufsatz
1994Prestige - Objektorientiertes Projektmanagement
Wagner, J.
Konferenzbeitrag
1994Raman scattering investigation on the ordered incorporation of Si dopant atoms on GaAs-001- vicinal surfaces during MBE growth.
Ramsteiner, M.; Wagner, J.; Jungk, G.; Behr, D.; Däweritz, L.; Hey, R.
Zeitschriftenaufsatz
1994Raman spectroscopic study of heterointerfaces in GaSb and InSb on GaAs and in InAs/(AlGa)Sb quantum structures
Wagner, J.; Schmitz, J.
Zeitschriftenaufsatz
1994Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs-001- vicinal surfaces.
Ramsteiner, M.; Wagner, J.; Behr, D.; Jungk, G.; Däweritz, L.; Hey, R.
Zeitschriftenaufsatz
1994Resonance effects in first- and second-order Raman scattering from AlAs
Wagner, J.; Fischer, A.; Braun, W.; Ploog, K.
Zeitschriftenaufsatz
1994Resonance effects in Raman scattering from InAs/AlSb quantum wells.
Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1994Resonant quenching of exciton photoluminescence in coupled GaAs/AlAs quantum wells - effect of exciton binding energy.
Schneider, H.; Wagner, J.; Ploog, K.
Zeitschriftenaufsatz
1994Resonant Raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces
Behr, D.; Wagner, J.; Schmitz, J.; Herres, N.; Ralston, J.D.; Koidl, P.; Ramsteiner, M.; Schrottke, L.; Jungk, G.
Zeitschriftenaufsatz
1994Studies of GaSb-capped InAs/AlSb quantum wells by resonant Raman scattering.
Wagner, J.; Schmitz, J.; Maier, M.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1994The transition from dilute aluminium delta-structures to an AlAs monolayer in GaAs and a comparison with Si delta-doping
Ashwin, M.J.; Fahy, M.R.; Hart, L.; Newman, R.C.; Wagner, J.
Zeitschriftenaufsatz
1994Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Koidl, P.; Ralston, J.D.
Zeitschriftenaufsatz
1993Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements.
Koidl, P.; Uzan-Saguy, C.; Kalish, R.; Bruder, M.; Bachem, K.H.; Wagner, J.
Zeitschriftenaufsatz
1993Characterization of heterointerfaces and surfaces in InSb on GaAs and in InAs/AlSb quantum wells
Schmitz, J.; Alvarez, A.-L.; Koidl, P.; Ralston, J.D.; Wagner, J.
Zeitschriftenaufsatz
1993Defect and strain redistribution in InxGa1-xAs/GaAs multiple quantum wells studied by resonant Raman scattering.
Larkins, E.C.; Herres, N.; Ralston, J.D.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1993Electronic and optical properties of low-dimensional semiconductor structures
Wagner, J.
Konferenzbeitrag
1993Homoepitaxial 13C diamond films studied by micro-Raman and photoluminescence spectroscopy
Behr, D.; Wagner, J.; Wild, C.; Koidl, P.
Zeitschriftenaufsatz
1993The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy.
Davidson, B.R.; Newman, R.C.; Robbie, D.A.; Sangster, M.J.L.; Fischer, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1993Nucleation, relaxation and redistribution of Si layers in GaAs.
Brandt, O.; Crook, G.; Ploog, K.; Bierwolf, R.; Hohenstein, M.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1993Observation of extremely long electron-spin-relaxation times in p-type delta-doped GaAs/Al(x)Ga(1-x)As double heterostructures
Schneider, H.; Richards, D.; Fischer, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1993Optical emission from the one-dimensional electron gas in narrow modulation-doped GaAs/'InGa'As/'AlGa'As quantum wires fabricated by lateral top barrier modulation
Wagner, J.; Behr, D.; Richards, D.; Bickl, T.; Forchel, A.; Emmerling, M.; Köhler, K.
Zeitschriftenaufsatz
1993Optical investigation of delta-doped In0.1Ga0.9As-Si/GaAs strained quantum wells.
Richards, D.; Maier, M.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
1993Photocurrent and Raman spectroscopy of Stark ladder superlattices with single monolayer AlAs barriers.
Schneider, H.; Ploog, K.; Fischer, A.; Fujiwara, K.; Wagner, J.
Zeitschriftenaufsatz
1993Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping.
Ramsteiner, M.; Hiesinger, P.; Köhler, K.; Rössler, U.; Wagner, J.
Zeitschriftenaufsatz
1993Raman spectroscopic study of interfaces in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular beam epitaxy
Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1993Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.
Fischer, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1993Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE.
Larkins, E.C.; Bender, G.; Schneider, H.; Ralston, J.D.; Rothemund, W.; Dischler, B.; Fleissner, J.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1993Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering.
Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1993Two-dimensional hole gas and Fermi-edge singularity in Be delta-doped GaAs
Richards, D.; Schneider, H.; Hendorfer, G.; Maier, M.; Fischer, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1993Wissensbasierte Planung fuer die Unikatfertigung
Wagner, J.
Konferenzbeitrag
1992The confining potential for carriers in planar doped GaAs and the effect of photoexcitation.
Richards, D.; Fischer, A.; Ploog, K.; Wagner, J.
Konferenzbeitrag
1992Effect of photoexcitation on the surface band bending in delta-doped GaAs:Si/Al0.33Ga0.67As double heterostructures.
Richards, D.; Wagner, J.; Fischer, A.; Ploog, K.
Zeitschriftenaufsatz
1992Fermi edge singularity and screening effects in the luminescence spectra of Si or Be delta-doped GaAs.
Ganser, P.; Fischer, A.; Köhler, K.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1992Infrared raman study of the phonon linewidth and the nondiamond carbon phase in -110- and -100- textured polycrystalline diamond films
Müller-Sebert, W.; Koidl, P.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1992Multiply resonant Raman scattering in Stark ladder superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Zeitschriftenaufsatz
1992Polycrystalline diamond for optical thin films
Müller-Sebert, W.; Wild, C.; Koidl, P.; Herres, N.; Eckermann, T.; Wagner, J.
Zeitschriftenaufsatz
1992Raman and ion channeling of damage in ion-implanted GaAs - dependence on ion dose and dose rate.
Desnica, U.V.; Haynes, T.E.; Holland, O.W.; Wagner, J.
Zeitschriftenaufsatz
1992Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers.
Bachem, K.H.; Ashwin, M.; Newman, R.C.; Woodhouse, K.; Nicklin, R.; Bradley, R.R.; Lauterbach, T.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1992Raman spectroscopy assessment of laterally structured delta-doped GaAs-Si.
Hülsmann, A.; Kaufel, G.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
1992Raman spectroscopy of delta-doped GaAs layers and wires.
Wagner, J.
Konferenzbeitrag
1992Raman spectroscopy of dopant induced local vibrational modes in III-V semiconductors
Wagner, J.
Konferenzbeitrag
1992Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers
Bachem, K.H.; Mörsch, G.; Kamp, M.; Fischer, A.; Lauterbach, T.; Maier, M.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1992Stundenplan - inkrementelle Datensicherung mit "dump"
Heinen, I.; Riegg, J.; Wagner, J.
Zeitschriftenaufsatz
1991Dopant incorporation and activation in highly Si doped GaAs layers grown by atomic layer molecular beam epitaxy
Silveira, J.P.; Briones, F.; Ramsteiner, M.; Wagner, J.
Konferenzbeitrag
1991Effect of spatial localization of dopant atoms of the spacing of electron subbands in delta-doped GaAs-Si.
Richards, D.; Fasol, G.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1991Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor -78/203 meV- in GaAs.
Roos, G.; Schöner, A.; Pensl, G.; Meyer, B.K.; Newman, R.C.; Wagner, J.
Zeitschriftenaufsatz
1991Fermi-edge singularity and band-filling effects in the luminescence spectrum of Be-delta-doped GaAs
Ruiz, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1991Fermi-edge singularity and screening effects in the absorption and luminescence spectrum of Si delta-doped GaAs.
Fischer, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1991Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering.
Addinall, R.; Murray, R.; Newman, R.C.; Parker, S.D.; Williams, R.L.; Droopad, R.; Deoliveira, A.G.; Stradling, R.A.; Wagner, J.
Zeitschriftenaufsatz
1991Overgrowth and strain in MBE-grown GaAs/ErAs/GaAs structures.
Hiesinger, P.; Schmälzlin, J.; Fuchs, F.; Ralston, J.D.; Wagner, J.
Zeitschriftenaufsatz
1991Plasma etching damage in GaAs studied by resonant Raman scattering.
Pletschen, W.; Kaufel, G.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
1991Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy.
Murray, R.; Newman, R.C.; Beall, R.B.; Harris, J.J.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1991Raman characterization of semiconducting materials and related structures.
Prevot, B.; Wagner, J.
Zeitschriftenaufsatz
1991Raman depth profiling in situ sputtering.
Koidl, P.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1991Raman scattering from the intrinsic 68-meV acceptor in Ga-rich GaAs
Ko, K.H.; Lagowski, J.; Wagner, J.
Zeitschriftenaufsatz
1991Raman spectroscopy for impurity characterization in III-V semiconductors.
Wagner, J.
Zeitschriftenaufsatz
1991Redistribution of epitaxial Si on -001- GaAs during overgrowth by GaAs.
Brandt, O.; Crook, G.E.; Ploog, K.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1991Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.
Newman, R.C.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1991Resonance effects in Raman scattering from polycrystalline diamond films.
Koidl, P.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1991Stark localization and resonance-induced delocalization of electrons in GaAs/AlAs superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Zeitschriftenaufsatz
1991Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots
Stibal, R.; Jantz, W.; Wagner, J.; Windscheif, J.
Zeitschriftenaufsatz
1990Comparative investigation of the interface quality of GaAs/AlGaAs quantum wells grown by MBE.
Schweizer, T.; Bachem, K.H.; Voigt, A.; Strunk, H.P.; Ganser, P.; Köhler, K.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1990Dopant incorporation in delta-doped GaAs layers studied by local vibrational mode spectroscopy
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Konferenzbeitrag
1990Dopant incorporation in Si-implanted and thermally annealed GaAs.
Jantz, W.; Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1990Doping density dependence of intersubband transitions in GaAs/AlxGa1-xAs quantum-well structures.
Ralston, J.D.; Biebl, H.; Koidl, P.; Ramsteiner, M.; Ennen, H.; Wagner, J.
Zeitschriftenaufsatz
1990Electronic structure of single delta-doped GaAs layers studied by photoluminescence and raman spectroscopy.
Ploog, K.; Wagner, J.
Konferenzbeitrag
1990Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Bruder, M.; Koidl, P.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1990Photoluminescence from the quasi-two-dimensional electron gas at a single silicon delta-doped layer in GaAs
Ploog, K.; Fischer, A.; Wagner, J.
Zeitschriftenaufsatz
1990Raman spectroscopy of dopant impurities in homogeneously and planar -delta- doped III-V semiconductors.
Wagner, J.
Zeitschriftenaufsatz
1990Raman spectroscopy of impurities in GaAs
Wagner, J.
Konferenzbeitrag
1990The role of deep acceptors for the compensation of undoped SI GaAs
Baeumler, M.; Mooney, P.; Kaufmann, U.; Wagner, J.
Konferenzbeitrag
1990Triply resonant raman scattering by LO phonons in a Wannier-Stark ladder
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Zeitschriftenaufsatz
1989The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering.
Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1989Double modulation techniques in Fourier Transform infrared photoluminescence
Fuchs, F.; Lusson, A.; Koidl, P.; Wagner, J.
Konferenzbeitrag
1989Hall effects, DLTS and optical investigations on the intrinsic 78/203 meV acceptor in GaAs.
Roos, G.; Schöner, A.; Pensil, G.; Krambrock, K.; Meyer, B.; Spaeth, J.M.; Wagner, J.
Zeitschriftenaufsatz
1989Incorporation of SI in delta-doped GaAs studied by local vibrational mode spectroscopy.
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1989Interference effects in the Raman scattering intensity from thin films.
Ramsteiner, M.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1989Optical and structural characterization of CVD diamond
Herres, N.; Koidl, P.; Wagner, J.; Wild, C.
Konferenzbeitrag
1989Optical spectroscopy of impurity levels in GaAs
Wagner, J.
Zeitschriftenaufsatz
1989Plasma deposition, properties and structure of amorphous hydrogenated carbon films.
Dischler, B.; Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1989Properties of sequentially sputtered tungsten silicide thin films
Pletschen, W.; Maier, M.; Herres, N.; Seelmann-Eggebert, M.; Wagner, J.
Zeitschriftenaufsatz
1989Radiative recombination across the Epsilon(0) and Delta(0) band gap in CdTe
Lusson, A.; Wagner, J.
Zeitschriftenaufsatz
1989Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy.
Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1989Raman spectroscopic study of Si local vibrational modes in GaAs.
Ramsteiner, M.; Murray, R.; Newman, R.C.; Wagner, J.
Zeitschriftenaufsatz
1989Resonant Raman scattering of amorphous carbon and polycrystalline diamond films
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1989Resonant raman scattering on In+-implanted CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1989Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs.
Rothemund, W.; Wagner, J.; Wettling, W.; Windscheif, J.
Zeitschriftenaufsatz
1988Band-gap narrowing in heavily doped silicon - a comparison of optical and electrical data.
Alamo, J.A. del; Wagner, J.
Zeitschriftenaufsatz
1988Characterization of GaAs crystals with different degrees of compensation - Electronic Raman scattering of photoneutralized acceptors
Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1988Composition dependence of longitudinal optical phonon modes in Cd(x)Hg(1-x)Te with 0.5 equal or smaller than x equal or smaller than 1
Lusson, A.; Wagner, J.
Zeitschriftenaufsatz
1988Damage assessment of low-dose Si-implanted GaAs by Raman spectroscopy.
Wagner, J.
Zeitschriftenaufsatz
1988Quantitative optical analysis of residual shallow acceptors in semi-insulating GaAs
Löhnert, K.; Jantz, W.; Ramsteiner, M.; Wagner, J.
Konferenzbeitrag
1988Raman scattering of amorphous carbon/semiconductor interface layers.
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1988Raman scattering of residual acceptors in GaAs and its application to optical topography
Windscheif, J.; Wagner, J.
Konferenzbeitrag
1988Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1988Raman study of Si plus -implanted GaAs.
Fritzsche, C.; Wagner, J.
Zeitschriftenaufsatz
1988Resonance Raman scattering of Si local vibrational modes in GaAs
Maier, M.; Ramsteiner, M.; Ennen, H.; Wagner, J.
Zeitschriftenaufsatz
1988Stimmen Computerberechnungen des wärmetechnischen Verhaltens von Gebäuden mit praktischen Messungen überein?
Erhorn, H.; Gertis, K.; Rath, J.; Wagner, J.
Zeitschriftenaufsatz
1988Werden die vorherberechneten keff-Werte von Außenbauteilen praktisch bestätigt?
Erhorn, H.; Gertis, K.; Rath, J.; Wagner, J.
Zeitschriftenaufsatz
1987Das Bauwerk als Heizungskomponente. Ein einfaches Hybridsystem zur Heizenergieeinparung mittels Kiesspeicher und verglastem Dachraum
Erhorn, H.; Gertis, K.; Rath, J.; Wagner, J.
Zeitschriftenaufsatz
1987Binding energies of shallow donors in semi-insulating GaAs
Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1987Characterization of a-C - H films by raman and luminescence spectroscopy
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Konferenzbeitrag
1987Defect induced raman transition in non-stoichiometric Ga-rich GaAs - a pseudolocalized vibrational mode of the GaAs antisite?
Ramsteiner, M.; Newmann, R.C.; Wagner, J.
Zeitschriftenaufsatz
1987Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structures
Stolz, W.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1987Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs
Ramsteiner, M.; Haydl, W.H.; Wagner, J.
Zeitschriftenaufsatz
1987Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs
Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J.
Konferenzbeitrag
1987Energiediagnose für Wohngebäude
Ast, H.; Diemer, R.; Bach, H.; Gertis, K.; Koenig, N.; Wagner, J.
Buch
1987Energy diagnosis for existing buildings - uncertainties in the thermal improvement of a facade
König, N.; Wagner, J.
Konferenzbeitrag
1987Ground-state splitting of the 78-meV double acceptor in GaAs
Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1987Optical characterization of heavily doped silicon
Wagner, J.
Zeitschriftenaufsatz
1987Photoluminescence excitation measurements on GaAs-Er grown by molecular-beam epitaxy
Müller, H.D.; Smith, R.S.; Ennen, H.; Wagner, J.
Zeitschriftenaufsatz
1987Plasma deposition of a-C/H films - the role of process gas, plasma chemistry and plasma surface interaction
Koidl, P.; Wagner, J.; Wild, C.
Konferenzbeitrag
1987Process monitoring of a-C-H plasma deposition
Koidl, P.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1987Raman scattering form extremely thin a-C-H films deposited on semiconductors
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Konferenzbeitrag
1987Raman scattering from extremely thin hard amorphous carbon films
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1987Raman scattering study of implantation damage and annealing in GaAs
Ramsteiner, M.; Wagner, J.
Konferenzbeitrag
1987Raman scattering study of low dose Si+-/implanted GaAs used for metal-semiconductor field-effect transistor fabrication
Jantz, W.; Wagner, J.; Frey, T.
Zeitschriftenaufsatz
1987Raman spectroscopic study of point defects in bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Konferenzbeitrag
1987Resonant raman scattering of hydrogenated amorphous carbon - evidence for pi-bonded carbon clusters
Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1987Resonant two-phonon raman scattering in GaAs. A sensitive probe for implantation damage and annealing
Wagner, J.; Hoffmann, C.
Zeitschriftenaufsatz
1986Band gap narrowing due to heavy doping in semiconductors
Wagner, J.
Aufsatz in Buch
1986Characterization hydrocarbon plasma used for a-C-H deposition
Bubenzer, A.; Koidl, P.; Wagner, J.; Wild, C.
Konferenzbeitrag
1986Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
Stolz, W.; Knecht, J.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1986Electronic raman scattering from residual acceptors in GaAs
Seelewind, H.; Newman, R.C.; Maguire, J.; Wagner, J.
Konferenzbeitrag
1986Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
Miguel, J.L. de; Ohmori, Y.; Stolz, W.; Tapfer, L.; Ploog, K.; Wagner, J.
Konferenzbeitrag
1986Hard amorphous carbon studied by ellipsometry and photoluminescence
Lautenschlager, P.; Wagner, J.
Zeitschriftenaufsatz
1986Neodymium complexed in GaP seperated by photoluminescence excitation spectroscopy
Müller, H.D.; Ennen, H.; Wagner, J.
Zeitschriftenaufsatz
1986Optical studies of hydrogenated amorphous carbon plasma deposition
Pohl, F.; Koidl, P.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1986Optically induced far-infrared absorption from residual acceptors in as-grown GaAs
Koidl, P.; Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1986Photoluminescence form heavily doped Si layers grown by liquid-phase epitaxy
Appel, W.; Warth, M.; Wagner, J.
Zeitschriftenaufsatz
1986Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs
Kaufmann, U.; Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1986Residual acceptor assessment in as-grown bulk GaAs by raman and selective pair luminescence spectroscopy - A comparative study
Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1985Excitation spectroscopy on silicon using color center lasers - Study of the thermally induced P line -0.767eV- defect
Sauer, R.; Doernen, A.; Wagner, J.
Konferenzbeitrag
1985Free-exciton luminescence in GaSb quantum wells confined by short-period AISb-GaSb superlattices
Ploog, K.; Ohmori, Y.; Okamoto, H.; Stolz, W.; Wagner, J.
Zeitschriftenaufsatz
1985Luminescence excitation spectroscopy on Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As quantum-well heterostructures
Stolz, W.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1984Germanium extremely heavily doped by Ion-implantation and laser annealing - A photoluminescence study
Axmann, A.; Contreras, G.; Compaan, A.; Cardona, M.; Wagner, J.
Konferenzbeitrag
1984Photoluminescence excitation spectroscopy on InP:Yb
Ennen, H.; Wagner, J.; Windscheif, J.
Zeitschriftenaufsatz
1983The E1 - E1 + Delta 1 transitions in bulk grown and in implanted laser annealed heavily doped germanium - lumninescence
Axmann, A.; Contreras, G.; Compaan, A.; Cardona, M.; Wagner, J.
Zeitschriftenaufsatz
1983Photoluminescence in heavily doped Si and Ge
Axmann, A.; Compaan, A.; Wagner, J.
Zeitschriftenaufsatz