Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Defect analysis using scanning acoustic microscopy for bonded microelectronic components with extended resolution and defect sensitivity
Brand, S.; Vogg, G.; Petzold, M.
2015Scanning acoustic GHz-microscopy versus conventional SAM for advanced assessment of ball bond and metal interfaces in microelectronic devices
Vogg, G.; Heidmann, T.; Brand, S.
2006Phosphorus donors in highly strained silicon
Huebl, H.; Stegner, A.R.; Stutzmann, M.; Brandt, M.S.; Vogg, G.; Bensch, F.; Rauls, E.; Gerstmann, U.
2005High quality strained Si/SiGe substrates for CMOS and optical devices
Weber, J.; Nebrich, L.; Bensch, F.; Neumeier, K.; Vogg, G.; Wieland, R.; Bonfert, D.; Ramm, P.
2005In situ defect etching of strained-Si layers with HCl gas
Kreuzer, S.; Bensch, F.; Merkel, R.; Vogg, G.
Konferenzbeitrag, Zeitschriftenaufsatz
2005Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate
Nebrich, L.; Neumeier, K.; Stadler, A.; Weber, J.; Bensch, F.; Kreuzer, S.; Vogg, G.; Herrmann, K.; Klumpp, A.; Wieland, R.; Bonfert, D.; Soldner, W.; Ramm, P.
Konferenzbeitrag, Zeitschriftenaufsatz
2005Spectroscopic techniques for characterization of high-mobility strained-Si CMOS
Schmidt, J.; Vogg, G.; Bensch, F.; Kreuzer, S.; Ramm, P.; Zollner, S.; Liu, R.; Wennekers, P.
Konferenzbeitrag, Zeitschriftenaufsatz
2005Strain stabilization of SiGe films on Si(001) by in situ pre-epitaxial HCL etching
Vogg, G.; Bensch, F.; Kreuzer, S.; Merkel, R.
Konferenzbeitrag, Zeitschriftenaufsatz
2004Gaschemisches Verfahren zum in-situ-Dekorieren von Kristalldefekten
Kreuzer, S.; Bensch, F.; Vogg, G.
2004High quality heteroepitaxial AlN films on diamond
Vogg, G.; Miskys, C.R.; Garrido, J.A.; Hermann, M.; Eickhoff, M.; Stutzmann, M.
2004Structural and interface properties of an AlN diamond ultraviolet-light emitting diode
Miskys, C.R.; Garrido, J.A.; Hermann, M.; Eickhoff, M.; Nebel, C.E.; Stutzmann, M.; Vogg, G.