Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018GaN-based Tri-gate high electron mobility transistors
Ture, Erdin
Dissertation
2018High-power asymmetrical three-way GaN doherty power amplifier at C-band frequencies
Derguti, Edon; Ture, Erdin; Krause, Sebastian; Schwantuschke, Dirk; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter
Zeitschriftenaufsatz
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Zeitschriftenaufsatz
2017Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017GaN-based Tri-gate high electron mobility transistors
Ture, Erdin
: Ambacher, Oliver (Referent); Bolognesi, Colombo R. (Referent); Palacios, Tomas (Referent)
Dissertation
2017Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick
Konferenzbeitrag
2016Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
Ture, E.; Brueckner, P.; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Konferenzbeitrag
2016High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
Ture, E.; Brückner, P.; Godejohann, B.-J.; Aidam, R.; Alsharef, M.; Granzner, R.; Schwierz, F.; Quay, R.; Ambacher, O.
Zeitschriftenaufsatz
2016Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Performance of tri-gate AlGaN/GaN HEMTs
Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016RF performance of trigate GaN HEMTs
Alsharef, M.; Christiansen, M.; Granzner, R.; Ture, E.; Quay, R.; Ambacher, O.; Schwierz, F.
Zeitschriftenaufsatz
2015A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O.
Zeitschriftenaufsatz
2015High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power
Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Ture, E.; Brückner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Konferenzbeitrag
2014Analysis and performance of drain bias "in-dependent" class-J power amplifier
Carrubba, V.; Ture, E.; Quay, R.; Raay, F. van; Musser, M.; Ambacher, O.
Konferenzbeitrag
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014Design of GaN tri-gate HEMTs
Alsharef, M.; Granzner, R.; Ture, E.; Quay, R.; Racko, J.; Breza, J.; Schwierz, F.
Konferenzbeitrag
2013Design of a high efficiency and broadband GaN power amplifier in class-J configuration using a transistor in package
Ture, E.
Master Thesis