Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications
Friedrich, J.; Jung, T.; Trempa, M.; Reimann, C.; Denisov, A.; Muehe, A.
Zeitschriftenaufsatz
2019Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots
Trempa, M.; Kranert, C.; Kupka, I.; Reimann, C.; Friedrich, J.
Zeitschriftenaufsatz
2019Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles
Schwanke, S.; Trempa, M.; Reimann, C.; Kuczynski, M.; Schroll, G.; Sans, J.; Friedrich, J.
Zeitschriftenaufsatz
2017Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots
Trempa, M.; Kupka, I.; Kranert, C.; Lehmann, T.; Reimann, C.; Friedrich, J.
Zeitschriftenaufsatz
2017Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots
Kupka, I.; Lehmann, T.; Trempa, M.; Kranert, C.; Reimann, C.; Friedrich, J.
Zeitschriftenaufsatz
2017Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon
Oriwol, D.; Trempa, M.; Sylla, L.; Leipner, H.S.
Zeitschriftenaufsatz
2016Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots
Trempa, M.; Beier, M.; Reimann, C.; Roßhirth, K.; Friedrich, J.; Löbel, C.; Sylla, L.; Richter, T.
Zeitschriftenaufsatz
2016Influence of different seed materials on multi-crystalline silicon ingot properties
Reimann, C.; Trempa, M.; Lehmann, T.; Rosshirt, K.; Stenzenberger, J.; Friedrich, J.; Hesse, K.; Dornberger, E.
Zeitschriftenaufsatz
2015Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi-mono-crystalline silicon ingots
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Krause, A.; Sylla, L.; Richter, T.
Zeitschriftenaufsatz
2015Investigation of iron contamination of seed crystals and its impact on lifetime distribution in Quasimono silicon ingots
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Sylla, L.; Krause, A.; Richter, T.
Zeitschriftenaufsatz
2014Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Krause, A.; Sylla, L.; Richter, T.
Zeitschriftenaufsatz
2014Gerichtete Erstarrung von einkristallinen Siliciumkristallen nach dem VGF-Verfahren für die Anwendung in der Photovoltaik
Trempa, Matthias
Dissertation
2014Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale
Lehmann, T.; Trempa, M.; Meissner, E.; Zschorsch, M.; Reimann, C.; Friedrich, J.
Zeitschriftenaufsatz
2014Verfahren zur Herstellung einer diffusionshemmenden Beschichtung, Tiegel zum Schmelzen und/oder Kristallisieren von Nicht-Eisen Metallen sowie Verwendungszwecke
Reimann, Christian; Obermeier, Sebastian; Trempa, Matthias; Schneider, Veronika; Friedrich, Jochen
Patent
2012Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Oriwol, D.
Zeitschriftenaufsatz
2011DEVICE AND METHOD FOR THE PRODUCTION OF SILICON BLOCKS
Freudenberg, Bernhard; Hollatz, Mark; Trempa, Matthias; Reimann, Christian; Friedrich, Jochen
Patent
2011Device for producing silicon blocks, comprises vessel, which is provided to receive silicon melt and has bottom, inner side, outer side and middle-longitudinal axis, supporting plate, and unit for generating inhomogeneous temperature field
Freudenberg, B.; Radel, G.; Trempa, M.; Dadzis, K.; Dietrich, M.; Nauert, D.; Proske, S.; Reimann, C.; Friedrich, J.
Patent
2011Device useful for producing silicon blocks, comprises a container for receiving a silicon melt with a base, an inner side, an outer side and a central longitudinal axis
Radel, G.; Nauert, D.; Trempa, M.; Dadzis, K.; Dietrich, M.; Proske, S.; Reimann, C.; Friedrich, J.; Freudenberg, B.
Patent
2010About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock
Reimann, C.; Trempa, M.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2010The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2010Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters
Reimann, C.; Trempa, M.; Jung, T.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2008Modeling of convective eeat and mass transfer processes in crystal growth of silicon for photovoltaic applications
Reimann, C.; Jung, T.; Trempa, M.; Friedrich, J.
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