Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology
Thome, Fabian; Leuther, Arnulf; Heinz, Felix; Ambacher, Oliver
Konferenzbeitrag
201870-116-GHz LNAs in 35-nm and 50-nm gate-length metamorphic HEMT technologies for cryogenic and room-temperature operation
Thome, Fabian; Leuther, Arnulf; Gallego, Juan Daniel; Schäfer, Frank; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2018Architecture of highly integrated cryogenic active planar OrthoMode transducer for the 3-mm band
Valente, G.; Navarrini, A.; Schaefer, F.; Serres, P.; Thome, Fabian
Konferenzbeitrag
2018Broadband high-power W-band amplifier MMICs based on stacked-HEMT unit cells
Thome, Fabian; Leuther, Arnulf; Schlechtweg, Michael; Ambacher, Oliver
Zeitschriftenaufsatz
2018Compact dual-polarization cryogenic receiver module for the 75-116 GHz band
Navarrini, Alessandro; Valente, Giuseppe; Serres, Patrice; Schäfer, Frank; Thome, Fabian; Garnier, Olivier
Konferenzbeitrag
2018Highly isolating and broadband single-pole double-throw switches for millimeter-wave applications up to 330 GHz
Thome, Fabian; Ambacher, Oliver
Zeitschriftenaufsatz
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
Thome, Fabian; Ambacher, Oliver
Konferenzbeitrag
2017Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag