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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013Simple and low-cost tracking generator design in envelope tracking radio frequency power amplifier system for WCDMA applications
Yusoff, Z.; Lees, J.; Chaudhary, M.A.; Carrubba, V.; Choi, H.; Tasker, P.; Cripps, S.C.
Zeitschriftenaufsatz
2012The continuous inverse class-F mode with resistive second-harmonic impedance
Carrubba, V.; Akmal, M.; Quay, R.; Lees, J.; Benedikt, J.; Cripps, S.C.; Tasker, P.J.
Zeitschriftenaufsatz
2012Continuous-classF3 power amplifier mode varying simultaneously first 3 harmonic impedances
Carrubba, V.; Quay, R.; Schlechtweg, M.; Ambacher, O.; Akmal, M.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C.
Konferenzbeitrag
2011Inverse class-FJ: Experimental validation of a new PA voltage waveform family
Carrubba, V.; Bell, J.J.; Smith, R.M.; Akmal, M.; Yusoff, Z.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C.
Konferenzbeitrag
2000A simplified broad-band large-signal nonquasi-static table-based FET Model
Fernandez-Barciela, M.; Tasker, P.; Campos-Roca, Y.; Demmler, M.; Massler, H.; Sanchez, E.; Curras-Francos, M.C.; Schlechtweg, M.
Zeitschriftenaufsatz
1997A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor
Gobert, Y.; Tasker, P.J.; Bachem, K.H.
Zeitschriftenaufsatz
1996AlInAs/GaInAs/AlInAs MODFETs fabricated on InP and on GaAs with metamorphic buffer - a comparison
Fink, T.; Haupt, M.; Köhler, K.; Raynor, B.; Braunstein, J.; Massler, H.; Tasker, P.J.
Konferenzbeitrag
1996Coplanar millimeter-wave IC's for W-band applications using 0.15 mu m pseudomorphic MODFETs
Schlechtweg, M.; Haydl, W.H.; Bangert, A.; Braunstein, J.; Tasker, P.J.; Verweyen, L.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.
Zeitschriftenaufsatz
1996Direct extraction of non-linear intrinsic transistor behaviour form large signal waveform measurement data
Demmler, M.; Tasker, P.J.; Schlechtweg, M.; Hülsmann, A.
Konferenzbeitrag
1995110 GHz Amplifiers Based on Compact Coplanar W-Band Receiver Technology
Schlechtweg, M.; Haydl, W.H.; Braunstein, J.; Tasker, P.J.; Bangert, A.; Reinert, W.; Verweyen, L.; Massler, H.; Seibel, J.; Züfle, K.H.; Bronner, W.; Fink, T.; Hülsmann, A.; Hofmann, P.; Kaufel, G.; Köhler, K.
Konferenzbeitrag
1995Compact high gain low 60 to 80 GHz amplifiers on GaAs
Braunstein, J.; Tasker, P.J.; Schlechtweg, M.; Maßler, H.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schneider, J.
Konferenzbeitrag
1995The determination of the transistor dynamic I-V characteristic from large signal RF measurements
Demmler, M.; Leckey, J.G.; Tasker, P.J.; Schlechtweg, M.
Konferenzbeitrag
1995New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHz
Tasker, P.J.; Braunstein, J.
Konferenzbeitrag
1995Pseudomorphic AlGaInP/GaAs MODFETs, novel device concepts for simple fabrication schemes
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Konferenzbeitrag
19940.15 mym T-gate e-beam lithography using crosslinked P/MMA/MAA developed in ortho-xylene resulting in high contrast and high plasma stability for dry etched recess gate pseudomorphic MODFETs for MMIC production
Hülsmann, A.; Mühlfriedel, E.; Raynor, B.; Glorer, K.; Bronner, W.; Köhler, K.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Zeitschriftenaufsatz
1994AlGaInP/GaInAs/GaAs MODFET devices with self-aligned p+ -GaAs gate structure.
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Konferenzbeitrag
1994AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device properties
Bachem, K.H.; Pletschen, W.; Winkler, K.; Fleissner, J.; Hoffmann, C.; Tasker, P.J.
Konferenzbeitrag
1994Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.; Arias, J.
Konferenzbeitrag
1994DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping
Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J.
Konferenzbeitrag
1994Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K.
Konferenzbeitrag
1994Fabrication of high breakdown pseudomorphic doped field effect transistors using double dry etched gate recess technology in combination with e-beam T-gate lithography
Hülsmann, A.; Bronner, W.; Köhler, K.; Braunstein, J.; Tasker, P.J.
Zeitschriftenaufsatz
1994Fabrication of high speed MMICs and digital ICs using T-gate technology on pseudomorphic-HEMT structures
Hülsmann, A.; Bronner, W.; Hofmann, P.; Köhler, K.; Raynor, B.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Konferenzbeitrag
1994Gds and fT analysis of pseudomorphic MODFETs with gate lengths down to 0.1 mym
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.
Konferenzbeitrag
1994Impedance characteristics of quantum-wells lasers
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Romero, B.; Rosenzweig, J.
Zeitschriftenaufsatz
1994Impedance, modulation response, and equivalent circuit of ultra-high-speed In0.35Ga0.65As/MQW lasers with p-doping
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1994On-wafer large signal power, S-parameter and waveform measurement system
Demmler, M.; Tasker, P.J.; Schlechtweg, M.
Konferenzbeitrag
199328-51 GHz dynamic frequency divider based on 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs.
Thiede, A.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.; Berroth, M.; Braunstein, J.; Nowotny, U.
Zeitschriftenaufsatz
199330 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Konferenzbeitrag
1993AlGaInP/GaInAs/GaAs MODFET devices - candidates for optoelectronic integrated circuits
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Zeitschriftenaufsatz
1993Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Zeitschriftenaufsatz
1993Design data for millimeter wave coplanar circuits
Haydl, W.H.; Heinrich, W.; Bosch, R.; Schlechtweg, M.; Tasker, P.J.; Braunstein, J.
Konferenzbeitrag
1993Digital dynamic frequency dividers for broad band application up to 60 GHz.
Thiede, A.; Berroth, M.; Tasker, P.J.; Schlechtweg, M.; Seibel, J.; Raynor, B.; Hülsmann, A.; Köhler, K.; Bronner, W.
Konferenzbeitrag
1993Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.
Konferenzbeitrag
1993High gain 70-80 GHz MMIC amplifiers in coplanar waveguide technology.
Schlechtweg, M.; Tasker, P.J.; Reinert, W.; Braunstein, J.; Haydl, W.H.; Hülsmann, A.; Köhler, K.
Zeitschriftenaufsatz
1993High gain CPW MMIC amplifiers and waveguide modules for V-band applications
Schlechtweg, M.; Tasker, P.J.; Reinert, W.; Braunstein, J.; Haydl, W.H.; Lohrmann, W.
Konferenzbeitrag
1993High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band
Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Reinert, W.; Hülsmann, A.; Köhler, K.; Bronner, W.; Bosch, R.; Haydl, W.
Konferenzbeitrag
1993High speed selfaligned GaInP/GaAs HBBTs.
Leier, H.; Marten, A.; Pletschen, W.; Tasker, P.J.; Bachem, K.H.
Zeitschriftenaufsatz
1993Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers
Weisser, S.; Tasker, P.J.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.
Konferenzbeitrag
1993Lumped element 12 GHz LNA MMIC using InGaAs/GaAs MODFETs with optimised gate width and reactive feedback.
Bosch, R.; Tasker, P.J.; Schlechtweg, M.; Braunstein, J.; Reinert, W.
Zeitschriftenaufsatz
1993Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Konferenzbeitrag
1993MODFET technology optimization for MMICs using statistical microwave characterization
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Kaufel, G.; Schlechtweg, M.
Konferenzbeitrag
1993A novel approach for MODFET noise parameter extraction and its application in mm-wave MMICs
Tasker, P.J.; Schlechtweg, M.; Reinert, W.; Braunstein, J.
Konferenzbeitrag
1993On-wafer single contact S-parameter measurements to 75 GHz - calibration procedure and measurement system
Tasker, P.J.; Schlechtweg, M.; Braunstein, J.
Konferenzbeitrag
1993P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J.
Zeitschriftenaufsatz
1993Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.
Konferenzbeitrag
1993Relating mym-wave mapped data to physical parameters for MODFETs.
Braunstein, J.; Tasker, P.J.; Schlechtweg, M.; Hülsmann, A.; Kaufel, G.; Köhler, K.
Zeitschriftenaufsatz
1993Very broad band TWAs to 80 GHz on GaAs substrate
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Schlechtweg, M.; Reinert, W.; Köhler, K.; Bronner, W.; Haydl, W.
Konferenzbeitrag
1993Very broadband distributed amplifier to 75 GHz.
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Schlechtweg, M.; Köhler, K.; Bronner, W.; Haydl, W.
Zeitschriftenaufsatz
199216 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.
Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P.
Konferenzbeitrag
1992Attenuation of millimeterwave coplanar lines on gallium arsenide and indium phosphide over the range 1-60 GHz
Haydl, W.H.; Braunstein, J.; Kitazawa, T.; Schlechtweg, M.; Tasker, P.J.; Eastman, L.F.
Konferenzbeitrag
1992Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J.
Konferenzbeitrag
1992Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Rosenzweig, J.; Fleissner, J.
Konferenzbeitrag
1992Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models.
Schlechtweg, M.; Reinert, W.; Tasker, P.J.; Braunstein, J.; Hülsmann, A.; Bosch, R.; Köhler, K.
Konferenzbeitrag
1992Direct extraction of all four transistor noise parameters from a single noise figure measurement
Tasker, P.J.; Reinert, W.; Braunstein, J.; Schlechtweg, M.
Konferenzbeitrag
1992Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Zeitschriftenaufsatz
1992High-frequency characterization of 30 GHz p-type modulation-doped In0.35Ga0.65As/GaAs MQW lasers
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Konferenzbeitrag
1992Investigation of transport phenomena in pseudomorphic MODFETs
Braunstein, J.; Tasker, P.; Schweizer, T.; Hülsmann, A.; Schlechtweg, M.; Kaufel, G.; Köhler, K.
Konferenzbeitrag
1992Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping.
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Konferenzbeitrag
1992Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.
Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Fleissner, J.; Larkins, E.C.; Ralston, J.D.; Rosenzweig, J.
Konferenzbeitrag
1992Probing the In mole fraction limits for pseudomorphic MODFETs.
Braunstein, J.; Tasker, P.J.; Reinert, W.; Schlechtweg, M.; Bosch, R.; Köhler, K.; Hülsmann, A.; Kaufel, G.
Konferenzbeitrag
1991Materials and device properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors -0 smaller than x smaller than 0.5.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schweizer, T.; Braunstein, J.; Schlechtweg, M.; Tasker, P.; Jakobus, T.; Köhler, K.
Konferenzbeitrag
1991Properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors - 0 is smaller than x smaller than 0.5.
Schweizer, T.; Ganser, P.; Hülsmann, A.; Tasker, P.; Köhler, K.
Konferenzbeitrag
1991Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.
Ralston, J.D.; Tasker, P.J.; Zappe, H.P.; Esquivias, I.; Fleissner, J.; Gallagher, D.F.G.
Zeitschriftenaufsatz
1990Materials and device characteristics of single and double sided delta-doped pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Konferenzbeitrag
1989Strained-layer InGaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy.
Offsey, S.D.; Schaff, W.J.; Tasker, P.J.; Eastman, L.F.; Ennen, H.
Zeitschriftenaufsatz