Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Non-invasive soft breakdown localisation in low k dielectrics using photon emission microscopy and thermal laser stimulation
Herfurth, N.; Wu, C.; Beyreuther, A.; Nakamura, T.; Wolf, I. de; Simon-Najasek, M.; Altmann, F.; Croes, K.; Boit, C.
Zeitschriftenaufsatz
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Zeitschriftenaufsatz
2018Finite element study of chip package induced mechanical and corrosive failure modes complementing microstructural root cause analyses
Lorenz, G.; Simon-Najasek, M.; Lindner, A.
Konferenzbeitrag
2018Physical failure analysis methods for wide band gap semiconductor devices
Graff, A.; Simon-Najasek, M.; Poppitz, D.; Altmann, F.
Konferenzbeitrag
2017The combined effect of mechanical package stress and humidity on chip corrosion probability
Lorenz, G.; Simon-Najasek, M.; Lindner, A.
Konferenzbeitrag
2017High resolution physical analysis of ohmic contact formation at GaN-HEMT devices
Graff, A.; Simon-Najasek, M.; Altmann, F.; Kuzmik, J.; Gregušová, D.; Haščík, Š.; Jung, H.; Baur, T.; Grünenpütt, J.; Blanck, H.
Zeitschriftenaufsatz
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Zeitschriftenaufsatz
2016Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures
Broas, M.; Graff, A.; Simon-Najasek, M.; Poppitz, D.; Altmann, F.; Jung, H.; Blanck, H.
Zeitschriftenaufsatz
2016Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy
Brand, S.; Simon-Najasek, M.; Kögel, M.; Jatzkowski, J.; Portius, R.; Altmann, F.
Zeitschriftenaufsatz
2016Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions
Simon-Najasek, M.; Lorenz, G.; Lindner, A.; Altmann, F.
Zeitschriftenaufsatz
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Konferenzbeitrag
2014Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures
Simon-Najasek, M.; Huebner, S.; Altmann, F.; Graff, A.
Zeitschriftenaufsatz
2014Localization of weak points in thin dielectric layers by Electron Beam Absorbed Current (EBAC) imaging
Jatzkowski, J.; Simon-Najasek, M.; Altmann, F.
Konferenzbeitrag
2013Aberration corrected TEM and Super-X STEM-EDXS characterization of high electron mobility transistor structures
Graff, A; Simon-Najasek, M.; Altmann, F.; Dammann, M.
Konferenzbeitrag
2012Enhanced failure analysis on open TSV interconnects
Altmann, F.; Schmidt, C.; Beyersdorfer, J.; Simon-Najasek, M.; Große, C.; Schrank, F.; Kraft, J.
Konferenzbeitrag
2012A new technique for non-invasive short-localisation in thin dielectric layers by electron beam absorbed current (EBAC) imaging
Simon-Najasek, M.; Jatzkowski, J.; Große, C.; Altmann, F.
Konferenzbeitrag
2012Novel techniques for dopant contrast analysis on real IC structures
Jatzkowski, J.; Simon-Najasek, M.; Altmann, F.
Zeitschriftenaufsatz, Konferenzbeitrag