Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Minixhofer, Rainer; Filipovic, Lado; Orio, Roberto de; Selberherr, Siegfried
Zeitschriftenaufsatz, Konferenzbeitrag
2014Three-dimensional simulation for the reliability and electrical performance of through-silicon vias
Filipovic, Lado; Rudolf, Florian; Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Singulani, Anderson; Minixhofer, Rainer; Selberherr, Siegfried
Konferenzbeitrag
2012Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
Zeitschriftenaufsatz
2011Hierarchical simulation of process variations and their impact on circuits and systems: Methodology
Lorenz, J.; Bär, E.; Clees, T.; Jancke, R.; Salzig, C.P.J; Selberherr, S.
Zeitschriftenaufsatz
2011Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.
Zeitschriftenaufsatz
2007Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2007Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2001Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Zeitschriftenaufsatz
2001Nonlinear electronic transport and device performance of HEMTs
Quay, R.; Hess, K.; Reuter, R.; Schlechtweg, M.; Grave, T.; Palankovski, V.; Selberherr, S.
Zeitschriftenaufsatz
2001Optimization of High-Speed SiGe HBTs
Palankovski, V.; Röhrer, G.; Wachmann, E.; Kraft, J.; Löffler, B.; Cervenka, J.; Quay, R.; Grasser, T.; Selberherr, S.
Konferenzbeitrag
2001A review of modeling issues for RF heterostructure device simulation
Quay, R.; Schultheis, R.; Kellner, W.; Palankovski, V.; Selberherr, S.
Konferenzbeitrag
2000Analysis of HBT behavior after strong electrothermal stress
Palankovski, V.; Selberherr, S.; Quay, R.; Schultheis, R.
Konferenzbeitrag
2000A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
2000A global self-heating model for device simulation
Grasser, T.; Palankovski, V.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2000III/V device optimization by physics-based S-parameter simulation
Quay, R.; Palankovski, V.; Reuter, R.; Schlechtweg, M.; Kellner, W.; Selberherr, S.
Konferenzbeitrag
2000Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2000Simulation of Gallium-Arsenide based high electron mobility transistors
Quay, R.; Massler, H.; Kellner, W.; Grasser, T.; Palankovski, V.; Selberherr, S.
Konferenzbeitrag
2000Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters
Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S.
Konferenzbeitrag
2000A temperature dependent model for the saturation velocity in semiconductor materials
Quay, R.; Moglestue, C.; Palankovski, V.; Selberherr, S.
Zeitschriftenaufsatz
1999A computationally efficient method for three-dimensional simulation of ion implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1999S-parameter simulation of HBTs on Gallium-Arsenide
Palankovski, V.; Quay, R.; Selberherr, S.; Schultheis, R.
Konferenzbeitrag
1999Thermal simulations of III/V HEMTs
Quay, R.; Reuter, R.; Grasser, T.; Selberherr, S.
Konferenzbeitrag
1998Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
1997Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1995Analytical model for phosphorus large angle tilted implantation
Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1995Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1995Trajectory split method for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
1988Implementation of models for stress-reduced oxidation into 2-D simulator
Seidl, A.; Huber, V.; Rudan, M.; Selberherr, S.; Stippel, H.; Strasser, E.; Lorenz, E.
Konferenzbeitrag