Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias
: Wagner, Joachim; Lausen, G.; Ambacher, O.; Schwierz, F.
Dissertation
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias
: Ambacher, Oliver (Referent); Schwierz, Frank (Referent)
Dissertation
2016Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
Ture, E.; Brueckner, P.; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Konferenzbeitrag
2016High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
Ture, E.; Brückner, P.; Godejohann, B.-J.; Aidam, R.; Alsharef, M.; Granzner, R.; Schwierz, F.; Quay, R.; Ambacher, O.
Zeitschriftenaufsatz
2016Performance of tri-gate AlGaN/GaN HEMTs
Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016RF performance of trigate GaN HEMTs
Alsharef, M.; Christiansen, M.; Granzner, R.; Ture, E.; Quay, R.; Ambacher, O.; Schwierz, F.
Zeitschriftenaufsatz
2015Bias-free lateral terahertz emitters - a simulation study
Granzner, R.; Polyakov, V.M.; Cimalla, V.; Ambacher, O.; Schwierz, F.
Zeitschriftenaufsatz
2015Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Ture, E.; Brückner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Konferenzbeitrag
2014Design of GaN tri-gate HEMTs
Alsharef, M.; Granzner, R.; Ture, E.; Quay, R.; Racko, J.; Breza, J.; Schwierz, F.
Konferenzbeitrag
2014Empirical model for the effective electron mobility in silicon nanowires
Granzner, R.; Polyakov, V.M.; Schippel, C.; Schwierz, F.
Zeitschriftenaufsatz
2014Reliability studies of GaN high electron mobility transistors
Cäsar, M.
: Ambacher, O. (Betreuer); Schwierz, F. (Betreuer)
Dissertation
2012The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
Al Mustafa, N.; Granzner, R.; Polyakov, Vladimir M.; Racko, J.; Mikolasek, M.; Breza, J.; Schwierz, F.
Zeitschriftenaufsatz
2011Electron and hole accumulation in InN/InGaN heterostructures
Lebedev, V.; Polyakov, V.M.; Knübel, A.; Aidam, R.; Kirste, L.; Cimalla, V.; Granzner, R.; Schwierz, F.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Impact of n-type doping on the terahertz surface emission from c-plane InN
Polyakov, V.M.; Cimalla, V.; Lebedev, V.; Schwierz, F.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Zeitschriftenaufsatz
2010Transport properties of InN
Cimalla, V.; Lebedev, V.; Ambacher, O.; Polyakov, V.M.; Schwierz, F.; Niebelschütz, F.; Ecke, G.; Myers, T.H.; Schaff, W.J.
Aufsatz in Buch
2010Vertical Design of InN Field Effect Transistors
Granzner, R.; Kittler, M.; Schwierz, F.; Polyakov, V.M.
Konferenzbeitrag
2009Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
Maroldt, S.; Haupt, C.; Pletschen, W.; Müller, S.; Quay, R.; Ambacher, O.; Schippel, C.; Schwierz, F.
Zeitschriftenaufsatz
2008Electronic and photoconductive properties of ultrathin InGaN photodetectors
Lebedev, V.; Polyakov, V.M.; Hauguth-Frank, S.; Cimalla, V.; Wang, C.-Y.; Ecke, G.; Schwierz, F.; Schober, A.; Lozano, J.G.; Morales, F.M.; Gonzales, D.; Ambacher, O.
Zeitschriftenaufsatz