Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1993Grenzflächen- und Materialeigenschaften von Al0.3Ga0.7As/InxGa1-xAs/GaAs Heterostrukturen
Schweizer, T.
Dissertation
1993Optical spectroscopy of shallow impurity states in semiconductor quantum wells.
Monemar, B.; Holtz, P.O.; Harris, C.I.; Bergmann, J.P.; Kalt, H.; Sundaram, M.; Merz, J.L.; Gossard, A.C.; Köhler, K.; Schweizer, T.
Zeitschriftenaufsatz
1992Anisotropic electrical conduction in GaAs/In 0.2 Ga 0.8 As/Al 0.3 Ga 0.7 As strained heterostructures beyond the critical layer thickness.
Hiesinger, P.; Schweizer, T.; Rothemund, W.; Ganser, P.; Jantz, W.; Köhler, K.
Zeitschriftenaufsatz
1992Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Schweizer, T.; Köhler, K.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1992Investigation of transport phenomena in pseudomorphic MODFETs
Braunstein, J.; Tasker, P.; Schweizer, T.; Hülsmann, A.; Schlechtweg, M.; Kaufel, G.; Köhler, K.
Konferenzbeitrag
1992Optical spectroscopy of bound excitons in AlGaAs/GaAs quantum wells
Monemar, B.; Holtz, P.O.; Bergmann, J.P.; Harris, C.; Sundaram, M.; Merz, J.P.; Gossard, A.C.; Schweizer, T.; Kalt, H.; Köhler, K.
Konferenzbeitrag
1992Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures.
Schweizer, T.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Anisotropic electron mobilities of Al0.3Ga0.7As/InxGa1-xAs/GaAs high electron mobility transistor structures.
Schweizer, T.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Dynamics of free and bound excitons in center-doped GaAs/AsGaAs quantum wells.
Monemar, B.; Kalt, H.; Harris, C.I.; Bergman, J.P.; Holtz, P.O.; Sundaram, M.; Merz, J.L.; Gossard, A.C.; Schweizer, T.; Köhler, K.
Zeitschriftenaufsatz
1991Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures.
Schweizer, T.; Rothemund, W.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Materials and device properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors -0 smaller than x smaller than 0.5.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schweizer, T.; Braunstein, J.; Schlechtweg, M.; Tasker, P.; Jakobus, T.; Köhler, K.
Konferenzbeitrag
1991Properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors - 0 is smaller than x smaller than 0.5.
Schweizer, T.; Ganser, P.; Hülsmann, A.; Tasker, P.; Köhler, K.
Konferenzbeitrag
1991Variations of the confining potential of doped AlGaAs/GaAs Quantum Wells with the photon energy of excitation.
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Schweizer, T.; Köhler, K.
Zeitschriftenaufsatz
1990Comparative investigation of the interface quality of GaAs/AlGaAs quantum wells grown by MBE.
Schweizer, T.; Bachem, K.H.; Voigt, A.; Strunk, H.P.; Ganser, P.; Köhler, K.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1990Influence of RIE- induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures.
As, D.J.; Kaufel, G.; Köhler, K.; Rothemund, W.; Zappe, H.P.; Jantz, W.; Schweizer, T.; Frey, T.
Zeitschriftenaufsatz
1990Investigation of the interface of GaAs/AlGaAs heterostructures.
Schweizer, T.; Bachem, K.H.; As, D.J.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1990Materials and device characteristics of single and double sided delta-doped pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Konferenzbeitrag
1990Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells.
Nido, M.; Alexander, M.G.W.; Rühle, W.W.; Schweizer, T.; Köhler, K.
Zeitschriftenaufsatz
1990A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells
Harris, C.; Monemar, B.; Kalt, H.; Schweizer, T.; Köhler, K.
Konferenzbeitrag