Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh
Konferenzbeitrag
2019High-Q anti-series AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2019RF-noise model extraction procedure for distributed multiport models
Heinz, Felix; Schwantuschke, Dirk; Ohlrogge, Matthias; Leuther, Arnulf; Ambacher, Oliver
Konferenzbeitrag
2018Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
Schwantuschke, Dirk; Brueckner, Peter; Amirpour, Raul; Tessmann, Axel; Kuri, Michael; Rießle, Markus; Massler, Hermann; Quay, Rüdiger
Konferenzbeitrag
2018First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Lozar, Roger; Massler, Hermann; Wagner, Sandrine; Quay, Rüdiger
Konferenzbeitrag
2018Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018High-power asymmetrical three-way GaN doherty power amplifier at C-band frequencies
Derguti, Edon; Ture, Erdin; Krause, Sebastian; Schwantuschke, Dirk; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter
Zeitschriftenaufsatz
2018Low-frequency dispersion and state dependency in modern microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael
Konferenzbeitrag
2018mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
Schwantuschke, Dirk; Godejohann, Birte-Julia; Brueckner, Peter; Tessmann, Axel; Quay, Rüdiger
Konferenzbeitrag
2018RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Tessmann, Axel; Ohlrogge, Matthias; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018State dependency, low-frequency dispersion, and thermal effects in microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2017E-band downlink wireless data transmission for future satellite communication
Harati, Parisa; Rosello, Enoc; Dan, Iulia; Bammidi, E.R.; Eisenbeis, Jörg; Tessmann, Axel; Schwantuschke, Dirk; Henneberger, Ralf; Kallfass, Ingmar
Konferenzbeitrag
2017Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Konferenzbeitrag
2017HEMT large-signal integral transform model including trapping and impact ionization
Raay, Friedbert van; Leuther, Arnulf; Ohlrogge, Matthias; Schwantuschke, Dirk; Schlechtweg, Michael
Konferenzbeitrag
2017Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick
Konferenzbeitrag
2017Is E-Band Satellite Communication Viable?: Advances in Modern Solid-State Technology Open Up the Next Frequency Band for SatCom
Harati, P.; Schoch, B.; Tessmann, A.; Schwantuschke, D.; Henneberger, R.; Czekala, H.; Zwick, T.; Kallfass, I.
Zeitschriftenaufsatz
2017Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick
Konferenzbeitrag
2017Untersuchung des Hochfrequenzrauschens von InGaAs-Transistoren
Heinz, Felix
: Ambacher, Oliver (Referent); Schwantuschke, Dirk (Betreuer)
Master Thesis
2016Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power
Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Dual-gate HEMT parameter extraction based on 2.5D multiport simulation of passive structures
Raay, F. van; Quay, R.; Schwantuschke, D.; Ohlrogge, M.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2016E-band transmitter with 29 dBm RF power for satellite communication
Harati, P.; Tessmann, A.; Schwantuschke, D.; Henneberger, R.; Kallfass, I.
Konferenzbeitrag
2016GaN-based E-band power amplifier modules
Schwantuschke, D.; Henneberger, R.; Wagner, S.; Tessmann, A.; Kallfass, I.; Brueckner, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design
Schwantuschke, Dirk
: Kallfass, I. (Betreuer); Ambacher, Oliver (Hrsg.)
Dissertation
2015High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power
Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design
Schwantuschke, D.
: Kallfass, I. (Referent); Ambacher, O. (Referent)
Dissertation
2014A 92 GHz GaN HEMT voltage-controlled oscillator MMIC
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Raay, F. van; Ambacher, O.
Konferenzbeitrag
2014Advanced GaN/(In)AlGaN MMICs for applications in space from K-band to W-band frequencies
Quay, R.; Schwantuschke, D.; Brueckner, P.; Chéron, J.; Dammann, M.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2014Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2014High linearity active GaN-HEMT down-converter MMIC for E-band radar applications
Kallfass, I.; Eren, G.; Weber, R.; Wagner, S.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014Q- and E-band amplifier MMICs for satellite communication
Schwantuschke, D.; Aja, B.; Seelmann-Eggebert, M.; Quay, R.; Leuther, A.; Brueckner, P.; Schlechtweg, M.; Mikulla, M.; Kallfass, I.; Ambacher, O.
Konferenzbeitrag
2014Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2014A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications
Ohlrogge, M.; Seelmann-Eggebert, M.; Leuther, A.; Massler, H.; Tessmann, A.; Weber, R.; Schwantuschke, D.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2013(In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies
Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O.
Zeitschriftenaufsatz
2013A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-Band AlGaN/GaN MMIC
Pahl, P.; Diebold, S.; Schwantuschke, D.; Wagner, S.; Lozar, R.; Quay, R.; Kallfass, I.; Zwick, T.
Konferenzbeitrag
2013A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-band AlGaN/GaN MMIC
Pahl, P.; Diebold, S.; Schwantuschke, D.; Wagner, S.; Lozar, R.; Quay, R.; Kallfass, I.; Zwick, T.
Konferenzbeitrag
2013A 67 GHz GaN voltage-controlled oscillator MMIC with high output power
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Zeitschriftenaufsatz
2013AlGaN/GaN-based variable gain amplifiers for W-band operation
Diebold, S.; Müller, D.; Schwantuschke, D.; Wagner, S.; Quay, R.; Zwick, T.; Kallfass, I.
Konferenzbeitrag
2013A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs
Schwantuschke, D.; Seelmann-Eggebert, M.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Konferenzbeitrag
2013High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2013High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Cheron, J.; Campovecchio, M.; Quere, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2013High-gain millimeter-wave AlGaN/GaN transistors
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2013High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
Mikulla, M.; Leuther, A.; Brueckner, P.; Schwantuschke, D.; Tessmann, A.; Schlechtweg, M.; Ambacher, O.; Caris, M.
Konferenzbeitrag
2013Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Maier. T.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2013New low-frequency dispersion model for AlGaN/GaN HEMTs using integral transform and state description
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Zeitschriftenaufsatz
20128-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
Dennler, P.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
201294 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology
Heijningen, M. van; Bent, G. van der; Rodenburg, M.; Vliet, F.E. van; Quay, R.; Brückner, P.; Schwantuschke, D.; Jukkala, P.; Narhi, T.
Konferenzbeitrag
2012Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2012GaN-based millimeter-wave monolithic integrated circuits
Schwantuschke, D.; Kallfass, I.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2012A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
Zeitschriftenaufsatz
2012A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Konferenzbeitrag
2012A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Konferenzbeitrag
2012W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology
Heijningen, M. van; Rodenburg, M.; Vliet, F.E. van; Massler, H.; Tessmann, A.; Brueckner, P.; Müller, S.; Schwantuschke, D.; Quay, R.; Narhi, T.
Konferenzbeitrag
2011A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brueckner, P.; Seelmann-Eggebert, M.; Mikulla, M.; Kallfass, I.; Quay, R.
Konferenzbeitrag
2011Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2011A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Brueckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2011A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Bruckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2011A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology
Kallfass, I.; Quay, R.; Massler, H.; Wagner, S.; Schwantuschke, D.; Haupt, C.; Kiefer, R.; Ambacher, O.
Konferenzbeitrag
2010Leistungsverstärker MMICs in GaN-Technologie für mm-Wellen Anwendungen
Schwantuschke, D.
Diplomarbeit