Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2000Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas
Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications
Hamacher, M.; Kaiser, R.; Heidrich, H.; Albrecht, P.; Borchert, B.; Janiak, K.; Löffler, R.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.
Konferenzbeitrag
2000Optical crosstalk within monolithic transceiver ICs on GaInAsP/InP
Kaiser, R.; Hamacher, M.; Heidrich, H.; Albrecht, P.; Janiak, K.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.
Konferenzbeitrag
1999Monolithically integrated 1.5 mu m/1.3 mu m transceiver modules for full-duplex operation
Hamacher, M.; Heidrich, H.; Kaiser, R.; Albrecht, P.; Ebert, W.; Franke, D.; Jacumeit, G.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.; Stenzel, R.; Devoldere, P.; Morin, M.; Terol, G.; Defars, J.-P.
Konferenzbeitrag
1998Full-duplex WDM transceiver PICs
Hamacher, M.; Heidrich, H.; Kaiser, R.; Albrecht, P.; Ebert, W.; Malchow, S.; Möhrle, M.; Rehbein, W.; Schroeter-Janssen, H.; Stenzel, R.
Konferenzbeitrag
1998Monolithically integrated transceivers on InP: The development of a generic integration concept and its technological challenges
Kaiser, R.; Hamacher, M.; Heidrich, H.; Albrecht, P.; Ebert, W.; Gibis, R.; Künzel, H.; Löffler, R.; Malchow, S.; Möhrle, M.; Rehbein, W.; Schroeter-Janssen, H.
Konferenzbeitrag
1997Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1997LP-MOVPE growth of laser structures using nitrogen carrier gas
Roehle, H.; Schroeter-Janssen, H.
Konferenzbeitrag
1996Bi-directional photonic integrated transceivers for optical communication systems
Heidrich, H.; Hamacher, M.; Kaiser, R.; Wenger, G.; Albrecht, P.; Löffler, R.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.; Steingrüber, R.
Konferenzbeitrag
1996Fabrication of a heterodyne receiver OEIC with optimized integration process using three MOVPE growth steps only
Hamacher, M.; Trommer, D.; Li, K.; Schroeter-Janssen, H.; Rehbein, W.; Heidrich, H.
Zeitschriftenaufsatz
1996LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H.
Konferenzbeitrag
1995First heterodyne receiver frontend module including a polarization diversity receiver OEIC on InP
Hamacher, M.; Trommer, D.; Heidrich, H.; Albrecht, P.; Jacumeit, G.; Passenberg, W.; Rohle, H.; Schroeter-Janssen, H.; Stenzel, R.; Unterborsch, G.
Zeitschriftenaufsatz
1995High bandwidth heterodyne receiver OEIC, fabricated with a three stage MOVPE
Hamacher, M.; Trommer, D.; Li, K.; Schroeter-Janssen, H.; Rehbein, W.; Heidrich, H.
Konferenzbeitrag
1995On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D.
Konferenzbeitrag
1994Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs
Kaiser, R.; Fidorra, F.; Trommer, D.; Malchow, S.; Albrecht, P.; Franke, D.; Heidrich, H.; Passenberg, W.; Schroeter-Janssen, H.; Stenzel, R.; Rehbein, W.
Konferenzbeitrag
1994Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE
Kaiser, R.; Fidorra, F.; Heidrich, H.; Albrecht, P.; Rehbein, W.; Malchow, S.; Schroeter-Janssen, H.; Franke, D.; Sztefka, G.
Konferenzbeitrag
1994Monolithically integrated polarisation diversity heterodyne receivers on GaInAsP/InP
Kaiser, R.; Trommer, D.; Fidorra, F.; Heidrich, H.; Malchow, S.; Franke, D.; Passenberg, W.; Rehbein, W.; Schroeter-Janssen, H.; Stenzel, R.; Unterborsch, G.
Zeitschriftenaufsatz
1992MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1992Passive mode converter with a periodically tilted InP/GaInAsP rib waveguide
Heidrich, H.; Albrecht, P.; Hamacher, M.; Nolting, H.-P.; Schroeter-Janssen, H.; Weinert, C.M.
Zeitschriftenaufsatz
1991Application of localized Zn diffusion across heterointerfaces for the realization of a compact high-speed bipolar driver circuit on InGaAsP/InP
Weber, R.; Paraskevopoulos, A.; Schroeter-Janssen, H.; Bach, H.G.
Zeitschriftenaufsatz
1991Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1990High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Paraskevopoulos, A.; Bach, H.G.; Schroeter-Janssen, H.; Mekonnen, G.; Hensel, H.J.; Grote, N.
Konferenzbeitrag
1989InP based integrated laser driver circuit
Paraskevopoulos, A.; Bach, H.G.; Mekonnen, G.; Schroeter-Janssen, H.; Fiedler, F.; Grote, N.
Konferenzbeitrag
1986Reactive ion beam etching of InP with N2 and N2/O2 mixtures
Katzschner, W.; Niggebrügge, U.; Löffler, R.; Schroeter-Janssen, H.
Zeitschriftenaufsatz
1985pnp-type InP/InGaAsP/InP bipolar transistor
Su, L.M.; Schroeter-Janssen, H.; Li, K.C.; Grote, N.
Zeitschriftenaufsatz