Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2002Development of enhanced depth-resolution technique for shallow dopant profiles
Fujita, M.; Tajima, J.; Nakagawa, T.; Abo, S.; Kinomura, A.; Paszti, F.; Takai, M.; Schork, R.; Frey, L.; Ryssel, H.
2000Enhanced depth-resolution analysis with medium energy ion scattering (MEIS) for shallow junction profiling
Tajima, J.; Park, Y.K.; Fujita, M.; Takai, M.; Schork, R.; Frey, L.; Ryssel, H.
2000Phosphorus ion shower implantation for special power IC applications
Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.
1999Ionenquelle fuer eine Ionenstrahlanlage
Schork, R.; Ryssel, H.
1997SiC formation by high-temperature carbon implantation into SiO2, the role of Si/SiO2 interface
Frey, L.; Stoemenos, J.; Schork, R.; Nejim, A.; Hemment, P.L.
1996Entwicklung eines Implantationsmodules
Schork, R.
Aufsatz in Buch
1995High-dose Ge+ implantation into silicon at elevated substrate temperature
Chen, N.X.; Schork, R.; Ryssel, H.
1995Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon
Simionescu, A.; Herzog, S.; Hobler, G.; Schork, R.; Lorenz, J.; Tian, C.; Stingeder, G.
1994Applications of single-beam photothermal analysis
Schork, R.; Krügel, S.; Schneider, C.; Pfitzner, L.; Ryssel, H.
1994Observation of local SIMOX layers by microprobe RBS
Kinomura, A.; Horino, Y.; Mokuno, Y.; Chayahara, A.; Kiuchi, M.; Fujii, K.; Takai, M.; Lohner, T.; Ryssel, H.; Schork, R.
1994On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R.
1993Contamination control and ultrasensitive chemical analysis
Ryssel, H.; Frey, L.; Streckfuß, N.; Schork, R.; Kroninger, F.; Falter, T.
1993Diffusion and activation of arsenic implanted at high temperature in silicon
Yu, Y.H.; Schork, R.; Pichler, P.; Ryssel, H.
1993Residual stress during local SIMOX process - Raman measurement and simulation
Seidl, A.; Takai, M.; Sayama, H.; Haramura, K.; Ryssel, H.; Schork, R.; Kato, K.
1992Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects
Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H.
1992Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.
1991Radiation-enhanced diffusion during high-temperature ion implantation
Schork, R.; Kluge, A.; Pichler, P.; Ryssel, H.
1989A flexible target chamber for a Varian 350 DF implanter
Kluge, A.; Ryssel, H.; Schork, R.
Zeitschriftenaufsatz, Konferenzbeitrag