Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Influence of annealing, oxidation and doping on conduction-band near interface traps in 4H-SiC characterized by low temperature conductance measurements
Noll, S.; Rambach, M.; Grieb, M.; Scholten, D.; Bauer, A.; Frey, L.
Konferenzbeitrag
2014Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors
Noll, S.; Rambach, M.; Grieb, M.; Scholten, D.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2013Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi
Noll, S.; Scholten, D.; Grieb, M.; Bauer, A.J.; Frey, L.
Konferenzbeitrag