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2018 | 22nd International Conference on Ion Implantation Technology, IIT 2018. Proceedings : Häublein, Volker; Ryssel, H. | Tagungsband |
2018 | Mass Separation Issues for the Implantation of Doubly Charged Aluminum Ions Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2016 | Ion implantation of polypropylene films for the manufacture of thin film capacitors Häublein, V.; Birnbaum, E.; Ryssel, H.; Frey, L.; Djupmyr, M. | Konferenzbeitrag |
2015 | Thermal laser separation - a novel dicing technology fulfilling the demands of volume manufacturing of 4H-SiC devices Lewke, D.; Dohnke, K.O.; Zühlke, H.U.; Cerezuela Barret, M.; Schellenberger, M.; Bauer, A.; Ryssel, H. | Konferenzbeitrag |
2014 | High quality and high speed cutting of 4H-SiC JFET wafers including PCM structures by using thermal laser separation Lewke, D.; Koitzsch, M.; Dohnke, K.O.; Schellenberger, M.; Zuehlke, H.-U.; Rupp, R.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
2014 | Modification of polypropylene films for thin film capacitors by ion implantation Häublein, V.; Birnbaum, E.; Ryssel, H.; Frey, L.; Grimm, W. | Konferenzbeitrag |
2014 | Out-diffusion of cesium and rubidium from amorphized silicon during solid-phase epitaxial regrowth Maier, R.; Häublein, V.; Ryssel, H. | Konferenzbeitrag |
2014 | Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2013 | Apertureless SNOM imaging of the surface phonon polariton waves. What do we measure? Kazantsev, D.V.; Ryssel, H. | Zeitschriftenaufsatz |
2013 | Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC Häublein, V.; Temmel, G.; Mitlehner, H.; Rattmann, G.; Strenger, C.; Hürner, A.; Bauer, A.J.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2013 | Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC Ouennoughi, Z.; Strenger, C.; Bourouba, F.; Haeublein, V.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz |
2013 | Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H. | Konferenzbeitrag |
2013 | Improving electric behavior and simplifying production of Si-based diodes by using thermal laser separation Koitzsch, M.; Lewke, D.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Kolb, R.; Zühlke, H.-U. | Konferenzbeitrag |
2013 | Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2013 | Scanning head for the apertureless near field optical microscope Kazantsev, D.V.; Ryssel, H. | Zeitschriftenaufsatz |
2013 | Simulation and design optimization of transparent heaters for spectroscopic micro cells Völlm, H.; Herrmann, J.; Maier, R.; Feili, D.; Häublein, V.; Ryssel, H.; Seidel, H. | Konferenzbeitrag |
2012 | Ablation Free Dicing of 4H-SiC Wafers with Feed Rates up to 200 mm/s by Using Thermal Laser Separation Lewke, Dirk; Koitzsch, Matthias; Schellenberger, Martin; Pfitzner, Lothar; Ryssel, Heiner; Zühlke, Hans-Ulrich | Konferenzbeitrag |
2012 | Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications Schwarzmann, Holger; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar | Konferenzbeitrag |
2012 | Angular distributions of sputtered silicon at grazing gallium ion beam incidence Burenkov, Alex; Sekowski, Matthias; Belko, Viktor; Ryssel, Heiner | Zeitschriftenaufsatz, Konferenzbeitrag |
2012 | Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs Strenger, C.; Häublein, V.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Bedel-Pereira, E.; Lefebvre, M.; Cristiano, F. | Konferenzbeitrag |
2012 | Enhancements in resizing single crystalline silicon wafers up to 450 mm by using thermal laser separation Koitzsch, M.; Lewke, D.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Zühlke, H.U. | Konferenzbeitrag |
2012 | Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation Häublein, V.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz |
2012 | Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium Maier, R.; Häublein, V.; Ryssel, H.; Völlm, H.; Feili, D.; Seidel, H.; Frey, L. | Konferenzbeitrag |
2012 | Thermal laser separation and its applications Lewke, Dirk; Koitzsch, Matthias; Schellenberger, Martin; Pfitzner, Lothar; Ryssel, Heiner; Zühlke, Hans-Ulrich | Zeitschriftenaufsatz |
2011 | 4H-SiC n-MOSFET logic circuits for high temperature operation Le-Huu, M.; Grieb, M.; Schrey, F.F.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2011 | Conduction mechanisms and environmental sensitivity of solution-processed silicon nanoparticle layers for thin-film transistors Weis, S.; Körmer, R.; Jank, M.P.M.; Lemberger, M.; Otto, M.; Ryssel, H.; Peukert, W.; Frey, L. | Zeitschriftenaufsatz |
2011 | Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
2011 | Dielectric layers suitable for high voltage integrated trench capacitors Dorp, J. vom; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz, Konferenzbeitrag |
2011 | Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters Laven, J.G.; Schulze, H.-J.; Häublein, V.; Niedernostheide, F.-J.; Schulze, H.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz |
2011 | Effect of increased oxide hole trap density due to nitrogen incorporation at the SiO2/SiC interface on F-N current degradation Strenger, C.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2011 | Effects of oxygen and forming gas annealing on ZnO TFTs Huang, J.; Radhakrishna, U.; Lemberger, M.; Jank, M.P.M.; Polster, S.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2011 | Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz, Konferenzbeitrag |
2011 | Germanium substrate loss during thermal processing Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
2011 | High pressure oxidation of 4H-SiC in nitric acid vapor Kalai Selvi, K.; Sreenidhi, T.; Dasgupta, N.; Ryssel, H.; Bauer, A. | Zeitschriftenaufsatz |
2011 | Investigation of the reliability of 4H-SiC MOS devices for high temperature applications Le-Huu, M.; Schmitt, H.; Noll, S.; Grieb, M.; Schrey, F.F.; Bauer, A.J.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2011 | Modulares Steuerungskonzept für integrierte Messtechnik in der Halbleiterfertigung am Beispiel einer Mehrkammerprozessanlage Schellenberger, Martin : Ryssel, H.; Frey, L. | Dissertation |
2011 | Monolithic RC-snubber for power electronic applications Dorp, Joachim vom; Berberich, Sven E.; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar | Konferenzbeitrag |
2011 | A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions Lorentz, V.R.H.; Schwarzmann, H.; März, M.; Bauer, A.J.; Ryssel, H.; Frey, L.; Poure, P.; Braun, F. | Zeitschriftenaufsatz |
2011 | Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors Walther, S.; Polster, S.; Meyer, B.; Jank, M.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz, Konferenzbeitrag |
2011 | Tuning of charge carrier density of ZnO nanoparticle films by oxygen plasma treatment Walther, S.; Polster, S.; Jank, M.P.M.; Thiem, H.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz, Konferenzbeitrag |
2010 | 2D Angular distributions of ion sputtered germanium atoms under grazing incidence Sekowski, M.; Burenkov, A.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2010 | Aerosol synthesis of silicon nanoparticles with narrow size distribution. Pt.1: Experimental investigations Körmer, R.; Jank, M.P.M.; Ryssel, H.; Schmid, H.-J.; Peukert, W. | Zeitschriftenaufsatz |
2010 | Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H. | Konferenzbeitrag |
2010 | Deep doping profiles in silicon created by MeV hydrogen implantation: Influence of implantation parameters Laven, J.G.; Schulze, H.-J.; Häublein, V.; Niedernostheide, F.-J.; Schulze, H.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2010 | Effective work function tuning in high-kappa dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz |
2010 | Effects of oxygen and forming gas annealing on ZnO-TFTs Huang, J.; Krishna, U.R.; Lemberger, M.; Jank, M.P.M.; Polster, S.; Ryssel, H.; Frey, L. | Poster |
2010 | Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide Rambach, M.; Bauer, A.J.; Ryssel, H. | Aufsatz in Buch |
2010 | FD SOI MOSFET compact modeling including process variations Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2010 | Honeycomb voids due to ion implantation in germanium Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
2010 | Impact of forming gas annealing on ZnO-TFTs Huang, J.; Krishna, U.R.; Lemberger, M.; Jank, M.P.M.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2010 | The impact of helium co-implantation on hydrogen induced donor profiles in float zone silicon Laven, J.G.; Job, R.; Schulze, H.-J.; Niedernostheide, F.-J.; Häublein, V.; Schulze, H.; Schustereder, W.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2010 | The impact of helium co-implantation on hydrogen induced donor profiles in float zone silicon Schulze, H.-J.; Niedernostheide, F.-J.; Häublein, V.; Schulze, H.; Schustereder, W.; Ryssel, H.; Frey, L.; Job, R.; Laven, J.G. | Zeitschriftenaufsatz, Konferenzbeitrag |
2010 | Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles Walther, S.; Schäfer, S.; Jank, M.P.M.; Thiem, H.; Peukert, W.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz |
2010 | Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil Dorp, J. vom; Erlbacher, T.; Lorentz, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2010 | Lanthanoid implantation for effective work function control in NMOS high-k/metal gate stacks Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2010 | Lossless average inductor current sensor for CMOS integrated DC-DC converters operating at high frequencies Lorentz, V.R.H.; Berberich, S.E.; März, M.; Bauer, A.J.; Ryssel, H.; Poure, P.; Braun, F. | Zeitschriftenaufsatz |
2010 | Modeling of the effective work function instability in metal/high-kappa dielectric stacks Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz |
2010 | NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications Le-Huu, M.; Schrey, F.F.; Grieb, M.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
2010 | Polymer bonded soft magnetics for EMI filter applications in power electronics Engelkraut, S.; Ryssel, H.; Frey, L.; Rauch, M.; Schletz, A.; März, M. | Konferenzbeitrag |
2009 | Analysis of the DC-arc behavior of a novel 3D-active fuse Dorp, J. vom; Berberich, S.E.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2009 | Charakterisierung und Modellierung von Ladungseinfangmechanismen in dielektrischen Speicherschichten Klar, O. : Ryssel, H. (Prüfer) | Dissertation |
2009 | Complementary metrology within a European joint laboratory Nutsch, A.; Beckhoff, B.; Altmann, R.; Berg, J.A. van den; Giubertoni, D.; Hoenicke, P.; Bersani, M.; Leibold, A.; Meirer, F.; Müller, M.; Pepponi, G.; Otto, M.; Petrik, P.; Reading, M.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
2009 | Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2009 | Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H. | Konferenzbeitrag |
2009 | Experimental observation of FIB induced lateral damage on silicon samples Spoldi, G.; Beuer, S.; Rommel, M.; Yanev, V.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2009 | Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes" Toumi, S.; Ferhat-Hamida, A.; Boussouar, L.; Sellai, A.; Ouennoughi, Z.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
2009 | Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films Weinreich, W.; Reiche, R.; Lemberger, M.; Jegert, G.; Müller, J.; Wilde, L.; Teichert, S.; Heitmann, J.; Erben, E.; Oberbeck, L.; Schröder, U.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2009 | Influence of the oxidation temperature and atmosphere on the reliability of thick gate oxides on the 4H-SiC C(000-1) face Grieb, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Ryssel, H. | Konferenzbeitrag |
2009 | Lanthanum implantation for threshold voltage control in metal/high-k devices Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Konferenzbeitrag, Zeitschriftenaufsatz |
2009 | Light-load efficiency increase in high-frequency integrated DC–DC converters by parallel dynamic width controlling Lorentz, V.; Berberich, S.; März, M.; Bauer, A.; Ryssel, H.; Poure, P.; Braun, F. | Zeitschriftenaufsatz |
2009 | Performance optimization of semiconductor manufacturing equipment by the application of discrete event simulation Pfeffer, M.; Pfitzner, L.; Ocker, B.; Öchsner, R.; Ryssel, H.; Verdonck, P. | Konferenzbeitrag |
2009 | Properties of TaN thin films produced using PVD linear dynamic deposition technique Kozlowska, M.; Oechsner, R.; Pfeffer, M.; Bauer, A.J.; Meissner, E.; Pfitzner, L.; Ryssel, H.; Maass, W.; Langer, J.; Ocker, B.; Schmidbauer, S.; Gonchond, J.-P. | Zeitschriftenaufsatz, Konferenzbeitrag |
2009 | Silicon based trench hole power capacitor Berberich, S.E.; Dorp, J. vom; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
2009 | Simulation assessment of process options for advanced CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2009 | Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers Erlbacher, T.; Graf, T.; DasGupta, N.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2009 | Transmission-electron-microscopy observation of Pt pillar fabricated by electron-beam-induced deposition Murakami, K.; Matsubara, N.; Ichikawa, S.; Kisa, T.; Nakayama, T.; Takamoto, K.; Wakaya, F.; Takai, M.; Petersen, S.; Amon, B.; Ryssel, H. | Zeitschriftenaufsatz |
2009 | UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale Schmitt, H.; Amon, B.; Beuer, S.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2008 | Advanced annealing strategies for the 32 nm node Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2008 | Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2008 | Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles Sekowski, M.; Burenkov, A.; Hernández-Mangas, J.; Martinez-Limia, A.; Ryssel, H. | Konferenzbeitrag |
2008 | An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A. | Zeitschriftenaufsatz |
2008 | Application-driven simulation of nanoscaled CMOS transistors and circuits Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
2008 | Barrier inhomogeneities of tungsten Schotty diodes on 4H-SiC Hamida, A.F.; Ouennoughi, Z.; Sellai, A.; Weiss, R.; Ryssel, H. | Zeitschriftenaufsatz |
2008 | Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition Roeder, G.; Manke, C.; Baumann, P.K.; Petersen, S.; Yanev, V.; Gschwandtner, A.; Ruhl, G.; Petrik, P.; Schellenberger, M.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2008 | Custom-specific UV nanoimprint templates and life-time of antisticking layers Schmitt, H.; Zeidler, M.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2008 | DC-arc behavior of a novel active fuse Dorp, J. vom; Berberich, S.E.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2008 | Detailed arsenic concentration profiles at Si/SiO2 interfaces Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W. | Zeitschriftenaufsatz |
2008 | Detailed carrier lifetime analysis of iron-contaminated boron-doped silicon by comparison of simulation and measurement Rommel, M.; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
2008 | Distribution and segregation of arsenic at the SiO2/Si interface Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W. | Zeitschriftenaufsatz |
2008 | Electrical AFM techniques for the advanced characterization of materials in semiconductor technology Yanev, V.; Rommel, M.; Spoldi, G.; Beuer, S.; Amon, B.; Petersen, S.; Lugstein, A.; Steiger, A.; Bauer, A.J.; Ryssel, H. | Poster |
2008 | Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide Rambach, M.; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
2008 | Experimental observation of FIB induced lateral damage on silicon samples Spoldi, G.; Beuer, S.; Rommel, M.; Yanev, V.; Bauer, A.J.; Ryssel, H. | Poster |
2008 | Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2007 : Öchsner, R.; Ryssel, H. | Jahresbericht |
2008 | HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
2008 | Highly filled polymers for power passives packaging Egelkraut, S.; Heinle, C.; Eckardt, B.; Krämer, P.; Brocka, Z.; März, M.; Ryssel, H.; Ehrenstein, G.W. | Konferenzbeitrag |
2008 | Ion implantation into nanoparticulate functional layers Walther, S.; Jank, M.P.M.; Ebbers, A.; Ryssel, H. | Konferenzbeitrag |
2008 | On the stability of fully depleted SOI MOSFETs under lithography process variations Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2008 | Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2008 | Polymer bonded soft magnetic particles for planar inductive devices Egelkraut, S.; Ryssel, H.; März, M. | Konferenzbeitrag |
2008 | Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2008 | Recent improvements in the integration of field emitters into scanning probe microscopy sensors Beuer, S.; Rommel, M.; Petersen, S.; Amon, B.; Sulzbach, T.; Engl, W.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2008 | Segregation of antimony to Si/SiO2 interfaces Steen, C.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
2008 | Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition Erlbacher, T.; Jank, M.P.M.; Ryssel, H.; Frey, L.; Engl, R.; Walter, A.; Sezi, R.; Dehm, C. | Zeitschriftenaufsatz |
2008 | Simulation of mass interferences considering charge exchange events and dissociation of molecular ions during extraction Häublein, V.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2008 | SSRM characterisation of FIB induced damage in silicon Beuer, S.; Yanev, V.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2008 | Threshold voltage engineering by lanthanide doping of the MOS gate stack Fet, A.; Häublein, V.; Ryssel, H. | Konferenzbeitrag |
2008 | Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics Yanev, V.; Rommel, M.; Lemberger, M.; Petersen, S.; Amon, B.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Paskalev, A.; Weinreich, W.; Fachmann, C.; Heitmann, J.; Schroeder, U. | Zeitschriftenaufsatz |
2008 | UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale Schmitt, H.; Amon, B.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Poster |
2007 | Accurate parameter extraction for the simulation of direct structuring by ion beams Beuer, S.; Rommel, M.; Lehrer, C.; Platzgummer, E.; Kvasnica, S.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2007 | Approach for a standardized methodology for multisite processing of 300-mm wafers at R&D sites Oechsner, R.; Pfeffer, M.; Frickinger, J.; Schellenberger, M.; Roeder, G.; Pfitzner, L.; Ryssel, H.; Fritzsche, M.; Kaushik, V.; Renaud, D.; Danel, A.; Claeys, C.; Bearda, T.; Lering, M.; Graef, M.; Murphy, B.; Walther, H.; Hury, S. | Zeitschriftenaufsatz |
2007 | Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection x-ray fluorescence spectrometry and successive etching of silicon Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
2007 | Characterization of the pile-up of As at the SiO2/Si interface Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Windl, W. | Konferenzbeitrag |
2007 | Characterization of the Segregation of Arsenic at the Interface SiO2/Si Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W. | Konferenzbeitrag |
2007 | Custom-specific UV nanoimprint templates and life-time of antisticking layers Schmitt, H.; Zeidler, M.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Poster |
2007 | Detailed photocurrent analysis of iron contaminated boron doped silicon by comparison of simulation and measurement Rommel, M.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2007 | Detection and review of crystal originated surface and sub surface defects on bare silicon Nutsch, A.; Funakoshi, T.; Pfitzner, L.; Steffen, R.; Supplieth, F.; Ryssel, H. | Konferenzbeitrag |
2007 | Electrical characterization of low dose focused ion beam induced damage in silicon by scanning spreading resistance microscopy Beuer, S.; Yanev, V.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Poster |
2007 | Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2006 : Öchsner, R.; Ryssel, H. | Jahresbericht |
2007 | Hafnium silicate as control oxide in non-volatile memories Erlbacher, T.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2007 | High temperature implantation of aluminum in 4H silicon carbide Rambach, M.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2007 | High voltage 3D-capacitor Berberich, S.E.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2007 | MOCVD of hafnium silicate films obtained from a single-source precursor on silicon and germanium for gate-dielectric applications Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Frey, L.; Ryssel, H.; Paskaleva, A.; Zürcher, S.; Bauer, A.J. | Zeitschriftenaufsatz |
2007 | MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications Lemberger, M.; Thiemann, S.; Baunemann, A.; Parala, H.; Fischer, R.A.; Hinz, J.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2007 | Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H. | Abstract |
2007 | Quantitative oxide charge determination by photocurrent analysis Rommel, M.; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
2007 | Recent improvements in the integration of field emitters into scanning probe microscopy sensors Beuer, S.; Rommel, M.; Petersen, S.; Amon, B.; Sulzbach, T.; Engl, W.; Bauer, A.J.; Ryssel, H. | Poster |
2007 | Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3 Weinreich, W.; Lemberger, M.; Erben, E.; Heitmann, J.; Wilde, L.; Ignatova, V.A.; Teichert, S.; Schröder, U.; Oberbeck, L.; Bauer, A.J.; Ryssel, H.; Kücher, P. | Poster |
2007 | UV nanoimprint materials: Surface energies, residual layers, and imprint quality Schmitt, H.; Frey, L.; Ryssel, H.; Rommel, M.; Lehrer, C. | Zeitschriftenaufsatz |
2007 | Verification of grain boundaries in annealed thin ZrO2 films by electrical AFM technique Yanev, V.; Paskaleva, A.; Weinreich, W.; Lemberger, M.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Poster |
2006 | Accurate parameter extraction for the simulation of direct structuring by ion beams Beuer, S.; Rommel, M.; Lehrer, C.; Platzgummer, E.; Kvasnica, S.; Bauer, A.J.; Ryssel, H. | Poster |
2006 | Active Fuse Berberich, S.E.; März, M.; Bauer, A.J.; Beuer, S.; Ryssel, H. | Konferenzbeitrag |
2006 | Approach for a standardized methodology for mulit-site processing of 300 mm wafers at R&D-sites Öchsner, R.; Frickinger, J.; Pfeffer, M.; Schellenberger, M.; Roeder, G.; Pfitzner, L.; Ryssel, H.; Fritzsche, M.; Kaushik, V.; Renaud, D.; Danel, A.; Claeys, C.; Bearda, T.; Lering, M.; Graef, M.; Murphy, B.; Walther, H.; Hury, S. | Konferenzbeitrag |
2006 | Bekleidungsstueck Ryssel, H.; Maerz, M. | Patent |
2006 | Creation of e-learning content for microelectronics manufacturing Öchsner, R.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Beer, K.; Boldin, M.; Mey, B. de; Engelhard, M.; O'Murchu, C.; Ditmar, J.; Colson, P.; Madore, M.; Krahn, L.; Kempe, W.; Luisman, E. | Konferenzbeitrag |
2006 | Creation of e-learning content for microelectronics manufacturing Öchsner, R.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Beer, K.; Boldin, M.; Mey, B. de; Engelhard, M.; O'Murchu, C.; Ditmar, J.; Colson, P.; Madore, M.; Krahn, L.; Kempe, W.; Luisman, E. | Konferenzbeitrag |
2006 | Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements Rambach, M.; Frey, L.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2006 | Flying Wafer - A standardised methodology for multi-site processing of 300 mm wafers at R&D-sites Frickinger, J.; Oechsner, R.; Schellenberger, M.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Claeys, C.; Claes, M.; Bearda, T.; Renaud, D.; Danel, A.; Lering, M.; Graef, M.; Kaushik, V.; Murphy, B.; Fritzsche, M.; Walther, H.; Hury, S. | Konferenzbeitrag |
2006 | Flying wafer - A standardised methodology for multi-site processing Of 300 Mm wafers at research and development-sites Frickinger, J.; Öchsner, R.; Schellenberger, M.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Claes, M.; Bearda, T.; Renaud, D.; Danel, A.; Lering, M.; Graef, M.; Kaushik, V.; Murphy, B.; Fritzsche, M.; Walther, H.; Hury, S. | Konferenzbeitrag |
2006 | Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2005 : Öchsner, R.; Ryssel, H. | Jahresbericht |
2006 | High temperature implantation of aluminum in 4H silicon carbide Rambach, M.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2006 | The impact of mass resolution on molybdenum contamination for B, P, BF, and as implantations Häublein, V.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2006 | Optical and X-ray characterization of ferroelectric strontium-bismuth-tantalate (SBT) thin films Fried, M.; Petrik, P.; Horvath, Z.E.; Lohner, T.; Schmidt, C.; Schneider, C.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2006 | Prospects for the realization of APC in a distributed 300 mm R&D-line Roeder, G.; Schellenberger, M.; Öchsner, R.; Pfeffer, M.; Frickinger, J.; Pfitzner, L.; Ryssel, H.; Fritzsche, M. | Konferenzbeitrag |
2006 | Standardization of integrated ellipsometry for semiconductor manufacturing Roeder, G.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Richter, U.; Stehle, J.L.; Piel, J.-P. | Konferenzbeitrag |
2006 | Well design in a bulk CMOS technology with low mask count Jank, M.P.M.; Kandziora, C.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2005 | Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction Häublein, V.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2005 | Annealing of aluminum implanted 4H-SiC Rambach, M.; Bauer, A.J.; Frey, L.; Friedrichs, P.; Ryssel, H. | Konferenzbeitrag |
2005 | Characterization of interface state densities by photocurrent analysis. Comparison of results for different insulator layers Rommel, M.; Groß, M.; Ettinger, A.; Bauer, A.J.; Frey, L.; Ryssel, H. | Poster |
2005 | Characterization of interface state densities by photocurrent analysis: Comparison of results for different insulator layers Rommel, M.; Groß, M.; Ettinger, A.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2005 | Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren Frey, L.; Bauer, A.; Ryssel, H. | Zeitschriftenaufsatz |
2005 | Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor Lemberger, M.; Paskaleva, A.; Zurcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
2005 | Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2004 : Öchsner, R.; Ryssel, H. | Jahresbericht |
2005 | High-k hafnium silicate films on silicon and germanium wafers by MOCVD using a single-source precursor Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Paskaleva, A.; Bauer, A.J.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2005 | Implantation and annealing of aluminum in 4H silicon carbide Rambach, M.; Frey, L.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2005 | Investigations into the wear of a WL10 ion source Häublein, V.; Sadrawetz, S.; Frey, L.; Martinz, H.-P.; Ryssel, H. | Konferenzbeitrag |
2005 | Ion sputtering at grazing incidence for SIMS-analysis Ullrich, M.; Burenkov, A.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2005 | Reliable matching of 300 mm defect inspection tools @ sub 60 nm defect size Nutsch, A.; Supplieth, F.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
2005 | Thin Hf(x)Ti(y)Si(z)O films with varying Hf to Ti contents as candidates for high-k dielectrics Bauer, A.J.; Paskaleva, A.; Lemberger, M.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2005 | Triple trench gate IGBTs Berberich, S.E.; Bauer, A.J.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2005 | Unit process aspects for APC-software implementation Roeder, G.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Spitzlsperger, G. | Konferenzbeitrag |
2005 | Wafer scale characterization of interface state densities without test structures by photocurrent analysis Rommel, M.; Groß, M.; Frey, L.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2004 | 3D feature-scale simulation of sputter etching with coupling to equipment simulation Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2004 | Design, fabrication and characterization of a microactuator for nebulization of fluids Yasenov, N.; Berberich, S.E.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2004 | E-Learning for microelectronics manufacturing Oechsner, R.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Beer, K.; Boldin, M. | Konferenzbeitrag |
2004 | Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors Lemberger, M.; Paskaleva, A.; Zurcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2004 | Fibroblasts adhesion on ion beam modified polyethylene Svorcik, V.; Tomsov, P.; Dvornkov, B.; Hnatowicz, V.; Ochsner, R.; Ryssel, H. | Zeitschriftenaufsatz |
2004 | Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2003 : Öchsner, R.; Ryssel, H. | Jahresbericht |
2004 | Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams Lehrer, C.; Frey, L.; Petersen, S.; Ryssel, H.; Schäfer, M.; Sulzbach, T. | Zeitschriftenaufsatz |
2004 | Investigation of rapid thermal annealed pn-junctions in SiC Rambach, M.; Weiss, R.; Frey, L.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2004 | Ion sputtering at grazing incidence for SIMS-analysis Ullrich, M.; Burenkov, A.; Ryssel, H. | Konferenzbeitrag |
2004 | Measurement data evaluation for in situ single-wavelength ellipsometry during reactive ion etching Roeder, G.; Schneider, C.; Pfitzner, L.; Ryssel, H. | Vortrag |
2004 | Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2004 | Optical characterization of ferroelectric Strontium-Bismuth-Tantalate (SBT) thin films Schmidt, C.; Petrik, P.; Schneider, C.; Fried, M.; Lohner, T.; Barsony, I.; Gyulai, J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2004 | Quantum mechanical studies of boron clustering in silicon Deák, P.; Gali, A.; Pichler, P.; Ryssel, H. | Konferenzbeitrag |
2004 | Three-dimensional simulation of ionized metal plasma vapor deposition Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2004 | Verfahren zur Verringerung der Partikelabgabe und Partikelaufnahme einer Oberflaeche Birnbaum, E.; Kluge, A.; Ryssel, H.; Ryzlewicz, C. | Patent |
2003 | Defect inspection method for quality control in a reclaim line Nutsch, A.; Fritsche, M.; Dudenhausen, H.-M.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
2003 | Different ion implanted edge terminations for Schottky diodes on SiC Weiss, R.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2003 | Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2003 | ENCOTION - A new simulation tool for energetic contamination analysis Häublein, V.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2003 | Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2002 : Öchsner, R.; Ryssel, H. | Jahresbericht |
2003 | Influence of antenna shape and resist patterns on charging damage during ion implantation Dirnecker, T.; Bauer, A.J.; Beyer, A.; Frey, L.; Henke, D.; Ruf, A.; Ryssel, H. | Konferenzbeitrag |
2003 | Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents Jank, M.; Frey, L.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
2003 | Investigation of lanthanum contamination from a lanthanated tungsten ion source Häublein, V.; Walser, H.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2003 | Nanoscale effects in focused ion beam processing Frey, L.; Lehrer, C.; Ryssel, H. | Zeitschriftenaufsatz |
2003 | Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2003 | Trench sidewall doping for lateral power devices Berberich, S.E.; Bauer, A.J.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2003 | VORRICHTUNG ZUR UEBERWACHUNG VON ABSICHTLICHEN ODER UNVERMEIDBAREN SCHICHTABSCHEIDUNGEN UND VERFAHREN Ziegler, J.; Waller, R.; Pfitzner, L.; Schneider, C.; Ryssel, H.; Tegeder, V. | Patent |
2003 | Wafer reclaim in semiconductor manufacturing Frickinger, J.; Nutsch, A.; Pfitzner, L.; Ryssel, H.; Zielonka, G. | Aufsatz in Buch |
2003 | Zirconium silicate films obtained from novel MOCVD precursors Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2002 | Algorithmen für die dreiecksbasierte dreidimensionale Simulation bewegter Oberflächen in der Halbleitertechnologie Lenhart, O. : Ryssel, H. (Prüfer) | Dissertation |
2002 | Cell adhesion on modified polyethylene Svorcik, V.; Rockova, K.; Dvorancova, B.; Broz, L.; Hnatowicz, V.; Öchsner, R.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Characterisation of BaxSr1-xTiO3 films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction Petrik, P.; Khanh, N.Q.; Horvath, Z.E.; Zolnai, Z.; Barsony, I.; Lohner, T.; Fried, M.; Gyulai, J.; Schmidt, C.; Schneider, C.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Determination of aluminum diffusion parameters in silicon Krause, O.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Development of enhanced depth-resolution technique for shallow dopant profiles Fujita, M.; Tajima, J.; Nakagawa, T.; Abo, S.; Kinomura, A.; Paszti, F.; Takai, M.; Schork, R.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Effect of barium contamination on gate oxide integrity in high-k DRAM Boubekeur, H.; Mikolajick, T.; Nagel, N.; Bauer, A.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2001 : Öchsner, R.; Ryssel, H.; Pfeffer, M. | Jahresbericht |
2002 | HandMon-ISPM: Handling monitoring in a loading stations of a furnaces Trunk, R.; Schmid, H.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Bernhardt, H.; Marx, E. | Konferenzbeitrag |
2002 | Influence of photoresist pattern on charging damage during high current ion implantation Dirnecker, T.; Ruf, A.; Frey, L.; Beyer, A.; Bauer, A.J.; Henke, D.; Ryssel, H. | Konferenzbeitrag |
2002 | MOCVD of titanium dioxide on the basis of new precursors Leistner, T.; Lehmbacher, K.; Härter, P.; Schmidt, C.; Bauer, A.J.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Non-destructive characterization of strontium bismuth tantalate films Petrik, P.; Khanh, N.Q.; Horvath, Z.E.; Zoknai, P.Z.; Barsony, I.; Lohner, T.; Freid, M.; Guylai, J.; Schmidt, C.; Schneider, C.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Phi-scatterometry for integrated linewidth and process control in DRAM manufacturing Hettwer, A.; Benesch, N.; Schneider, C.; Pfitzner, L.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Platinum contamination issues in ferroelectric memories Boubekeur, H.; Mikolajick, T.; Pamler, W.; Hopfner, J.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Recombination lifetimes of iron-contaminated silicon wafers: Characterization using a single set of capture cross-sections Rommel, M.; Zoth, G.; Ullrich, M.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Verfahren zur Herstellung von Kohlenstoffelektroden und chemischen Feldeffektransistoren sowie dadurch hergestellte Kohlenstoffelektroden und chemische Feldeffektransistoren und deren Verwendung Schnupp, R.; Ryssel, H.; Oechsner, R. | Patent |
2001 | Amino acids grafting of Ar+ ions modified PE Svorcik, V.; Hnatowicz, V.; Stopka, P.; Bacáková, L.; Heitz, J.; Öchsner, R.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Barium, strontium and bismuth contamination in CMOS processes Boubekeur, H.; Mikolajick, T.; Höpfner, J.; Dehm, C.; Pamler, W.; Steiner, J.; Kilian, G.; Kolbesen, B.O.; Bauer, A.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2001 | Control of organic contamination in CMOS manufacturing Bügler, J.; Frickinger, J.; Zielonka, G.; Pfitzner, L.; Ryssel, H.; Schottler, M. | Konferenzbeitrag |
2001 | Development of sensors for the measurement of chamber wall depositions Schneider, C.; Pfitzner, L.; Ryssel, H.; Marx, E.; Schneider, T. | Konferenzbeitrag |
2001 | Electrical reliability aspects of through the gate implanted MOS-structures with thin oxides Jank, M.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Emission of volatile degradation products from polymers irradiated with heavy ions to different fluences Hnatowicz, V.; Vacik, J.; Svorcik, V.; Rybka, V.; Ryssel, H.; Kluge, A. | Zeitschriftenaufsatz |
2001 | Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused Ion beam nano machining Lehrer, C.; Frey, L.; Petersen, S.; Sulzbach, T.; Ohlsson, O.; Dziomba, T.; Danzebrink, H.U.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2000 : Öchsner, R.; Ryssel, H.; Pfeffer, M.; Schmeing, M. | Jahresbericht |
2001 | Impact of platinum contamination on ferroelectric memories Boubekeur, H.; Mikolajick, T.; Nagel, N.; Dehm, C.; Pamler, W.; Bauer, A.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Improvement in electrical properties of Simni films by multiple-steps implantation Lu, D.T.; Huang, D.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | In Situ Particle Measurement System in Loading Stations of Furnaces Trunk, R.; Schmid, H.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Bernhardt, H.; Marx, E. | Konferenzbeitrag |
2001 | In-situ measurement of the crystallization of amorphous- silicon in a vertical furnace using spectroscopic ellipsometry Petrik, P.; Lehnert, W.; Schneider, C.; Lohner, T.; Fried, M.; Gyulai, J.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | In-situ particle measurement in loading stations of furnaces Trunk, R.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Storbeck, O. | Konferenzbeitrag |
2001 | The influence of target temperature and photon assistance on the radiation sefect formation in low-fluence ion-implanted silicon Barabanenkov, M.Y.; Gyulai, J.; Leonov, A.V.; Mordkovich, V.N.; Omelyanovskaya, N.M.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Integrated metrology. An enabler for advanced process control (APC) Schneider, C.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
2001 | Limitations of focused ion beam nanomachining Lehrer, C.; Frey, L.; Petersen, S.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets Burenkov, A.; Mu, Y.; Ryssel, H. | Konferenzbeitrag |
2001 | Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low-pressure in different gas atmospheres Beichele, M.; Bauer, A.J.; Herden, M.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Reliability of ultrathin nitrided oxides grown in low- pressure N2O ambient Beichele, M.; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode Herden, M.; Bauer, A.J.; Beichele, M.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices Strobel, S.; Bauer, A.J.; Beichele, M.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Trace analysis for 300 mm wafers and processes with total- reflection x-ray-fluorescence Nutsch, A.; Erdmann, V.; Zielonka, G.; Pfitzner, L.; Ryssel, H. | Zeitschriftenaufsatz |
2001 | Tungsten, Nickel, and Molybdenum Schottky Diodes with Different Edge Termination Weiss, R.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | 3D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac) Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2000 | Adhesion and proliferation of keratinocytes on ion beam modified polyethylene Svorcik, V.; Walachova, K.; Proskova, K.; Dvoankova, B.; Vogtova, D.; Öchsner, R.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | Aspects of barium contamination in high dielectric dynamic random-access memories Boubekeur, H.; Hopfner, J.; Mikolajick, T.; Dehm, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | Charge state dependence of stopping power for light ions penetrating thin carbon foils at low velocity Mu, Y.; Burenkov, A.; Ryssel, H.; Xia, Y.; Mei, L. | Zeitschriftenaufsatz |
2000 | Charge-state dependence of stopping power for light ions penetrating thin carbon foils at low velocity Mu, Y.G.; Burenkov, A.; Ryssel, H.; Xia, Y.Y.; Mei, L.M. | Zeitschriftenaufsatz |
2000 | A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Zeitschriftenaufsatz |
2000 | Defects and gallium - contamination during focused ion beam micro machining Lehrer, C.; Frey, L.; Petersen, S.; Mizutani, M.; Takai, M.; Ryssel, H. | Konferenzbeitrag |
2000 | Electrodeposition of photoresist - optimization of deposition conditions, investigation of lithographic processes and chemical-resistance Schnupp, R.; Baumgärtner, R.; Kuhnhold, R.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition Petrik, P.; Lohner, T.; Fried, M.; Biro, L.P.; Khanh, N.Q.; Gyulai, J.; Lehnert, W.; Schneider, C.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | Enhanced depth-resolution analysis with medium energy ion scattering (MEIS) for shallow junction profiling Tajima, J.; Park, Y.K.; Fujita, M.; Takai, M.; Schork, R.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2000 | Feed-forward control for a lithography/etch sequence Öchsner, R.; Tschaftary, T.; Sommer, S.; Pfitzner, L.; Ryssel, H.; Gerath, H.; Baier, C.; Hafner, M. | Konferenzbeitrag |
2000 | Field emitter array fabricated using focused ion and electron beam induced reaction Yavas, O.; Ochiai, C.; Takai, M.; Park, Y.K.; Lehrer, C.; Lipp, S.; Frey, L.; Ryssel, H.; Hosono, A.; Okuda, S. | Zeitschriftenaufsatz |
2000 | Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 1999 : Öchsner, R.; Ryssel, H. | Jahresbericht |
2000 | Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides Jank, M.P.M.; Lemberger, M.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
2000 | In situ spectroscopic ellipsometry for the characterization of polysilicon formation inside a vertical furnace Petrik, P.; Lehnert, W.; Schneider, C.; Fried, M.; Lohner, T.; Gyulai, J.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | In-production monitoring and control of in situ-chamber clean processes Roeder, G.; Andrian-Werburg, M. von; Tschaftary, T.; Schneider, C.; Pfitzner, L.; Ryssel, H.; John, P.; Tegeder, V. | Konferenzbeitrag |
2000 | Indirect-coupling ultraviolet-sensitive photodetector with high electrical gain, fast-response, and low-noise Qian, F.; Schnupp, R.; Chen, C.Q.; Helbig, R.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H. | Konferenzbeitrag |
2000 | Modelling of intrinsic aluminum diffusion for future power devices Krause, O.; Pichler, P.; Ryssel, H. | Konferenzbeitrag |
2000 | Phi-scatterometry for on-line process control Benesch, N.; Hettwer, A.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Broermann, O.; Marx, E.; Tegeder, V. | Konferenzbeitrag |
2000 | Phosphorus ion shower implantation for special power IC applications Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H. | Konferenzbeitrag |
2000 | Reducing airborne molecular contamination by efficient purging of FOUPs for 300-mm wafers. The influence of material properties Frickinger, J.; Bügler, J.; Zielonka, G.; Pfitzner, L.; Ryssel, H.; Hollemann, S.; Schneider, H. | Zeitschriftenaufsatz |
2000 | Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide Treu, M.; Schorner, R.; Friedrichs, P.; Rupp, R.; Wiedenhofer, A.; Stephani, D.; Ryssel, H. | Konferenzbeitrag |
2000 | Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres Beichele, M.; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | A silicon vibration sensor for tool state monitoring working in the high acceleration range Thomas, J.; Kühnhold, R.; Schnupp, R.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices Herden, M.; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac) Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
2000 | Vacancy-Nitrogen Complexes in Float-Zone Silicon Quast, F.; Pichler, P.; Ryssel, H.; Falster, R. | Konferenzbeitrag |
2000 | Verfahren und Vorrichtung zur Ueberfuehrung eines Fluessigkeitsstromes in einen Gasstrom Strzyzewski, P.; Roeder, G.; Pfitzner, L.; Ryssel, H. | Patent |
1999 | AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite Biro, L.P.; Mark, G.I.; Gyulai, J.; Havancszak, K.; Lipp, S.; Lehrer, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1999 | Application and cost analysis of scatterometry for integrated metrology Benesch, N.; Schneider, C.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
1999 | Carbon nanotubes produced by high energy (E greater than 100MeV), heavy ion irradiation of graphite Biro, L.P.; Szabo, B.; Mark, G.I.; Gyulai, J.; Havancsak, K.; Kurti, J.; Dunlop, A.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1999 | Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone Bauer, A.J.; Froeschle, B.; Beichele, M.; Ryssel, H. | Konferenzbeitrag |
1999 | CMOS-kompatible Herstellung miniaturisierter Silicium-Vibrationssensoren für die Messung im Bereich hoher Beschleunigungsamplituden zur Werkzeugüberwachung Thomas, J.; Schnupp, R.; Ryssel, H. | Konferenzbeitrag |
1999 | Comparison of beam-induced deposition using ion microprobe Park, Y.S.; Nagai, T.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1999 | Comparison of FIB-induced physical and chemical etching Park, Y.K.; Paszti, F.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
1999 | A computationally efficient method for three-dimensional simulation of ion implantation Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Konferenzbeitrag |
1999 | Design and sensitivity optimization of vibration sensors for tool state monitoring Thomas, J.S.; Kuhnhold, R.; Ryssel, H. | Konferenzbeitrag |
1999 | Development and characterization of a sensor for human information Ghanem, W. : Ryssel, H. (Prüfer) | Dissertation |
1999 | Electrodeposition of photoresist: process optimization and chemical resistance Schnupp, R.; Baumgärtner, R.; Kühnhold, R.; Ryssel, H. | Konferenzbeitrag |
1999 | Elektrische Eigenschaften von MOCVD-Tantalpentoxid in Mehrschicht-Dielektrika Roth, H. : Ryssel, H. (Prüfer) | Dissertation |
1999 | Equipment and wafer modeling of batch furnaces by neural networks Benesch, N.; Schneider, C.; Lehnert, W.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
1999 | Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO Bauer, A.J.; Mayer, P.; Frey, L.; Häublein, V.; Ryssel, H. | Konferenzbeitrag |
1999 | Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 1998 : Öchsner, R.; Ryssel, H. | Jahresbericht |
1999 | Impact of nitrogen implantation into polysilicon to reduce boron penetration through the gate oxide Bauer, A.J.; Mayer, P.; Frey, L.; Häublein, V.; Ryssel, H. | Konferenzbeitrag |
1999 | Improving the Resolution of a Compact Ozone Photometer Qian, F.; Schnupp, R.; Ryssel, H. | Konferenzbeitrag |
1999 | Impurity incorporation during beam assisted processing analyzed using nuclear microprobe Park, Y.K.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1999 | In-situ particle measurements in liquids Ryssel, H.; Ramin, M.; Schmidt, A.; Trunk, R. | Konferenzbeitrag |
1999 | The influence of surface oxidation on the pH-sensing properties of silicon nitride Mikolajick, T.; Kuhnhold, R.; Schnupp, R.; Ryssel, H. | Konferenzbeitrag |
1999 | Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe Park, Y.K.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1999 | Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U. | Konferenzbeitrag |
1999 | Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U. | Konferenzbeitrag |
1999 | Ionenquelle fuer eine Ionenstrahlanlage Schork, R.; Ryssel, H. | Patent |
1999 | Li+ grafting of ion irradiated polyethylene Svorcik, V.; Rybka, V.; Vacik, J.; Hnatowicz, V.; Ochsner, R.; Ryssel, H. | Zeitschriftenaufsatz |
1999 | Mainstream measurement and dosage of anaesthetic gases by using microsystems Schnupp, R.; Temmel, G.; Ryssel, H. | Konferenzbeitrag |
1999 | Mikrosystem zur automatisierten Werkzeugüberwachung in Drehmaschinen über die Erfassung von Vibration, Kraft und Temperatur Pitter, F.; Thomas, J.; Feldmann, K.; Ryssel, H. | Zeitschriftenaufsatz |
1999 | Mikrosystemtechnische Vibrationssensoren zur automatisierten Zustandsüberwachung von Drehwerkzeugen Thomas, J. : Ryssel, H. (Prüfer) | Dissertation |
1999 | MOCVD of ferroelectric thin films Schmidt, C.; Lehnert, W.; Leistner, T.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
1999 | Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering Stiebel, D.; Pichler, P.; Ryssel, H. | Konferenzbeitrag |
1999 | Nondestructive analytical tools for characterization of thin titanium silicide films prepared by conventional and direct step silicidation with enhanced transition Kal, S.; Ryssel, H. | Zeitschriftenaufsatz |
1999 | Nondestructive analytical tools for characterization of thin titanium silicide films prepared by conventional and direct step silicidation with enhanced transition Kal, S.; Ryssel, H. | Zeitschriftenaufsatz |
1999 | Novel process control strategies for 300 mm semiconductor production Pfitzner, L.; Oechsner, R.; Schneider, C.; Ryssel, H.; Riemer, M.; Podewils, M. von | Zeitschriftenaufsatz |
1999 | On the influence of boron-interstitial complexes on transient enhanced diffusion Stiebel, D.; Pichler, P.; Ryssel, H. | Konferenzbeitrag |
1999 | Presence Monitoring Using Thermopile-Arrays Ghanem, W.; Schnupp, R.; Ryssel, H. | Konferenzbeitrag |
1999 | Reliability of ultra-thin gate oxides grown in low-pressure N20 ambient or on nitrogen-implanted silicon Bauer, A.J.; Beichele; Herden, M.; Ryssel, H. | Konferenzbeitrag |
1999 | Scanning probe method investigation of carbon nanotubes produced by high energy ion irradiation of graphite Biro, L.P.; Mark, G.I.; Gyulai, J.; Rozlosnik, N.; Kurti, J.; Szabo, B.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1999 | A silicon vibration sensor for tool state monitoring working in the acceleration range Thomas, J.; Kühnhold, R.; Schnupp, R.; Ryssel, H. | Konferenzbeitrag |
1999 | Simulation of a Coating Protection for an In Situ Ellipsometer in a CVD Furnace Poscher, S.; Lehnert, W.; Ryssel, H. | Konferenzbeitrag |
1999 | Simulation of a coating protection for an In Situ Ellipsometer in a CVD Furnace Poscher, S.; Lehnert, W.; Ryssel, H. | Konferenzbeitrag |
1999 | Simulation of the production of functional layers for vibration sensors for tool state monitoring and finite element analysis of mechanical characteristics Thomas, J.; Kuhnhold, R.; Schnupp, R.; Temmel, G.; Ryssel, H. | Konferenzbeitrag |
1999 | Simulation von widerstands- und lampenbeheizten Öfen für die Schichtabscheidung Poscher, S. : Ryssel, H. (Prüfer) | Dissertation |
1999 | Stabilität von Metall-Oxid-Halbleiter-Strukturen auf hexagonalem Siliciumkarbid Treu, M. : Ryssel, H. (Prüfer) | Dissertation |
1999 | Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering Qian, F.; Temmel, G.; Schnupp, R.; Ryssel, H. | Konferenzbeitrag |
1999 | Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1999 | Wohltemperierte Siliziumscheiben - Simulation und Messung der Temperaturverteilung in einem vertikalen Schichtabscheideofen Poscher, S.; Wellner, S.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | 4 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere Bauer, A.J.; Burte, E.P.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | AFM surface investigation of polyethylene modified by ion bombardment Svorcik, V.; Arenholz, E.; Hnatowicz, V.; Rybka, V.; Öchsner, R.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Atomistic analysis of the vacancy mechanism of impurity diffusion in silicon List, S.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Atomistic modeling of high-concentration effects of impurity diffusion in silicon List, S.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | A compact ozone measurement system Qian, F.; Jin, G.R.; Schnupp, R.; Temmel, G.; Ryssel, H. | Konferenzbeitrag |
1998 | Comparative study of polysilicon-on-oxide using spectroscopy ellipsometry, atomic force microscopy and transformation electron microscopy Petrik, P.; Fried, M.; Lohner, T.; Berger, R.; Biro, L.P.; Schneider, C.; Ryssel, H.; Gyulai, J. | Konferenzbeitrag |
1998 | Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy Petrik, P.; Biro, L.P.; Fried, M.; Lohner, T.; Berger, R.; Schneider, C.; Gyulai, J.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1998 | Fabrication of field emitter array using focused ion and electron beam induced reaction Takai, M.; Kishimoto, T.; Morimoto, H.; Park, Y.K.; Lipp, S.; Lehrer, C.; Frey, L.; Ryssel, H.; Hosono, A.; Kawabuchi, S. | Konferenzbeitrag |
1998 | Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 1997 : Öchsner, R.; Ryssel, H. | Jahresbericht |
1998 | In situ layer characterization by spectroscopic ellipsometry at high temperatures Lehnert, W.; Petrik, P.; Schneider, C.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
1998 | In situ spectroscopic ellipsometry for advanced process control in vertical furnaces Lehnert, W.; Berger, R.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Stehle, J.L.; Piel, J.-P.; Neumann, W. | Konferenzbeitrag |
1998 | Influence of RTP on Vacancy Concentrations Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R. | Aufsatz in Buch |
1998 | Microanalysis of masklessly fabricated microstructures using nuclear microprobe Park, Y.K.; Takai, M.; Nagai, T.; Kishimoto, T.; Seidl, A.; Lehrer, C.; Frey, L.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
1998 | Microprobe analysis of Pt films deposited by beam induced reaction Park, Y.K.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Monte-Carlo simulation of silicon amorphization during ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Zeitschriftenaufsatz |
1998 | Neuronale Modellbildung und Temperaturregelung eines Vertikalofens für die Halbleiterfertigung Benesch, N.; Hofmann, U.; Schneider, C.; Ryssel, H. | Konferenzbeitrag |
1998 | Noncontacting measurement of thickness of thin titanium silicide films using spectroscopic ellipsometry Kal, S.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Optimization of critical ion implantation steps in 0.18 mu m CMOS technology Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1998 | Productronica 97. Proceedings HLF. Semiconductor equipment and materials contamination control and defect reduction Ryssel, H.; Pfitzner, L.; Trunk, R. | Tagungsband |
1998 | R and D in Europe's equipment industry. The role of research institutes Ryssel, H.; Schneider, C. | Zeitschriftenaufsatz |
1998 | Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4 H-silicon carbide Treu, M.; Burte, E.P.; Schörner, R.; Friedrichs, P.; Stephani, D.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Surface disorder production during plasma immersion implantation Lohner, T.; Khanh, N.Q.; Petrik, P.; Biro, L.P.; Fried, M.; Pinter, I.; Lehnert, W.; Frey, L.; Ryssel, H.; Wentnik, D.J.; Gyulai, J. | Konferenzbeitrag |
1998 | Thin carbon films as elctrodes for bioelectronic applications Schnupp, R.; Kühnhold, R.; Temmel, G.; Burte, E.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Three-dimensional simulation of layer deposition Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | 3D simulation for sub-micron metallization Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1997 | 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2 Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | Atomistic analysis of the vacancy diffusion mechanism List, S.; Ryssel, H. | Konferenzbeitrag |
1997 | Characterization of thin TiSi2 films by spectroscopic ellipsometry and thermal wave analysis Kasko, I.; Kal, S.; Ryssel, H. | Konferenzbeitrag |
1997 | Characterization of ultrathin on stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride Bauer, A.J.; Burte, E.P.; Ryssel, H. | Zeitschriftenaufsatz |
1997 | Comparison of different methods for the parameter determination of the solar cell's double exponential equation Gottschalg, R.; Rommel, M.; Infield, D.G.; Ryssel, H. | Konferenzbeitrag |
1997 | Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | Degradation of polymide by implantation with Ar+ ions Svorcik, V.; Rybka, V.; Hnatowicz, V.; Mieek, I.; Jankovkij, O.; Öchsner, R.; Ryssel, H. | Zeitschriftenaufsatz |
1997 | Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R. | Zeitschriftenaufsatz |
1997 | The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors Mikolajick, T.; Häublein, V.; Ryssel, H. | Zeitschriftenaufsatz |
1997 | Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren Mikolajick, T. : Ryssel, H. (Prüfer) | Dissertation |
1997 | Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Achievements and results. Annual report 1996 : Öchsner, R.; Ryssel, H. | Jahresbericht |
1997 | In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions Biro, L.P.; Gyulai, J.; Havancsak, K.; Didyk, A.Y.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1997 | Integrated process control for cluster tools using an in-line analytical module Kasko, I.; Oechsner, R.; Froeschle, B.; Schneider, C.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
1997 | Ion implantation into semiconductors Ryssel, H. | Aufsatz in Buch |
1997 | Kinetics of chemical vapor deposition of titanium nitride Popovska, N.; Poscher, S.; Tichy, P.; Emig, G.; Ryssel, H. | Konferenzbeitrag |
1997 | Metrology and analytics for the optimization of CMP processing Huber, A.; Erdmann, V.; Zielonka, G.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Rohde, A. | Konferenzbeitrag |
1997 | Micromechanical ultrasonic liquid nebulizer Paneva, R.; Temmel, G.; Burte, E.P.; Ryssel, H. | Zeitschriftenaufsatz |
1997 | Modular metrology tools for productivity enhancement in wafer fabs Schneider, C.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
1997 | Monitoring strategies for yield enhancement Pfitzner, L.; Oechsner, R.; Scheider, C.; Ryssel, H.; Riemer, M.; Treiber, T.; Podewils, M. von | Konferenzbeitrag |
1997 | Monte-Carlo simulation of silicon amorphization during ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Konferenzbeitrag |
1997 | New method based on atomic force microscopy for in-depth characterization of damage in Si irradiated with 209 MeV Kr Biro, L.P.; Gyulai, J.; Havancsak, K.; Didyk, A.Y.; Bogen, S.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1997 | A novel XPS system for integration into advanced semiconductor equipment for in-line process control Kasko, I.; Oechsner, R.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Trubitsyn, A.A.; Kratenko, V.I. | Konferenzbeitrag |
1997 | Observation of vacancy enhancement during rapid thermal annealing in nitrogen Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M. | Zeitschriftenaufsatz |
1997 | The ph-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor deposition Mikolajick, T.; Kühnhold, R.; Ryssel, H. | Zeitschriftenaufsatz |
1997 | Reduction of lateral parasitic current flow by buried recombination layers formed by high-energy implantation of C or O into silicon Bogen, S.; Herden, M.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
1997 | Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | Three-dimensional simulation of ion implantation Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H. | Konferenzbeitrag |
1997 | Untersuchung des Einflusses von Gitterleerstellen auf die Sauerstoffpräzipitation in Silicium mit Hilfe der Platindiffusion Jacob, M. : Ryssel, H. (Prüfer) | Dissertation |
1996 | Advanced process control system for vertical furnaces Berger, R.; Schneider, C.; Lehnert, W.; Pfitzner, L.; Ryssel, H. | Aufsatz in Buch |
1996 | The challenge of multi-component, multi-vendor clustertools Pfitzner, L.; Schneider, C.; Ryssel, H. | Konferenzbeitrag |
1996 | Characterization of ultrathin on stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride Bauer, A.J.; Burte, E.P.; Ryssel, H. | Zeitschriftenaufsatz |
1996 | A comparison of focused ion beam and electron beam induced deposition processes Lipp, S.; Frey, L.; Lehrer, C.; Demm, C.; Pauthner, S.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
1996 | Entwurf von Vibrationssensoren und Optimierungsanalysen mittels der Methode der finiten Elemente Thomas, J.; Künhold, R.; Temmel, G.; Ryssel, H. | Konferenzbeitrag |
1996 | Experimental verification of three-dimensional simulations of LTO layer deposition using geometries prepared with anisotropic wet-etching of silicon with KOH Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1996 | Herstellung und Charakterisierung von gebondeten pn- und SOS-Strukturen und Realisierung von Leistungsdioden auf gebondeten n(+)n(-)-Siliciumschichten Wiget, R. : Ryssel, H. (Prüfer) | Dissertation |
1996 | Micromechanical ultrasonic liquid nebulizer Paneva, R.; Temmel, G.; Burte, E.P.; Ryssel, H. | Konferenzbeitrag |
1996 | Modification of field emitter array tip shape by focused ion-beam irradiation Takai, M.; Kishimoto, T.; Yamashita, M.; Morimoto, H.; Yura, S.; Hosono, A.; Okuda, S.; Lipp, S.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1996 | Simulation von Implantationsprofilen mit Methoden der Transporttheorie Barthel, A. : Ryssel, H. (Prüfer) | Dissertation |
1996 | Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiO(x)) deposition Lipp, S.; Frey, L.; Lehrer, C.; Frank, B.; Demm, E.; Pauthner, S.; Ryssel, H. | Zeitschriftenaufsatz |
1996 | Three-dimensional simulation of ion implantation Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1996 | Three-dimensional simulation of layer deposition Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1996 | Three-dimensional simulation of low-pressure chemical vapour deposition Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1995 | 4 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere Bauer, A.J.; Burte, E.P.; Ryssel, H. | Konferenzbeitrag |
1995 | 6th International Conference on Simulation of Semiconductor Devices and Processes. SISDEP '95. Proceedings : Ryssel, H.; Pichler, P. | Tagungsband |
1995 | Analysis of contamination - a must for ultraclean technology Ryssel, H.; Streckfuß, N.; Aderhold, W.; Berger, R.; Falter, T.; Frey, L. | Konferenzbeitrag |
1995 | Analytical model for phosphorus large angle tilted implantation Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Konferenzbeitrag |
1995 | Analytical modeling of lateral implantation profiles Lorenz, J.; Ryssel, H.; Wierzbicki, R.J. | Zeitschriftenaufsatz |
1995 | Anatomistic evaluation of diffusion theories for the dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Comparison of retrograde and conventional p-wells in regard latch-up susceptibility Bogen, S.; Gong, L.; Frey, L.; Ryssel, H.; Körber, K. | Zeitschriftenaufsatz |
1995 | Determination of vacancy concentration in float zone and Czochralski silicon Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R. | Konferenzbeitrag |
1995 | Gitterdeformation in Silicium nach Implantationen von Phosphor Remmler, M.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
1995 | High-dose Ge+ implantation into silicon at elevated substrate temperature Chen, N.X.; Schork, R.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Improved delineation technique for two dimensional dopant profiling Gong, L.; Petersen, S.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Ion-beam mixed ultra-thin cobalt silicide (CoSi2) films by cobalt sputtering and rapid thermal annealing Kal, S.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Local material removal by focused ion beam milling and etching Lipp, S.; Frey, L.; Franz, G.; Demm, E.; Petersen, S.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Local material removal by focused ion beam milling and etching Lipp, K.; Frey, L.; Franz, G.; Demm, E.; Petersen, S.; Ryssel, H. | Konferenzbeitrag |
1995 | Model for the electronic stopping of channeled ions in silicon around the stopping power maximum Simionescu, A.; Hobler, G.; Bogen, S.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Modeling dynamic clustering of arsenic including non-neglible concentration of arsenic-point defect pairs Bauer, H.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Nitrogen implanted etch-stop layers in silicon Paneva, R.; Temmel, G.; Ryssel, H.; Burte, E.P. | Konferenzbeitrag |
1995 | On the implantation models for simulation of the FOND devices Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1995 | Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials Pichler, P.; Ryssel, H.; Ploß, R.; Bonafos, C.; Claverie, A. | Zeitschriftenaufsatz |
1995 | Platinum diffusion at low temperatures Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R. | Konferenzbeitrag |
1995 | Preparation and characterization of ultra-thin cobalt silicide for VLSI applications Kal, S.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
1995 | Recombination of charge carriers in buried layers formed by high energy oxygen or carbon implantation into silicon Bogen, S.; Frey, L.; Herder, M.; Ryssel, H. | Konferenzbeitrag |
1995 | Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Konferenzbeitrag |
1995 | Strain profiles in phosphorus implanted /100/-silicon Remmler, M.; Frey, L.; Horvath, Z.E.; Ryssel, H. | Konferenzbeitrag |
1995 | Trajectory split method for Monte-Carlo simulation of ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Zeitschriftenaufsatz |
1995 | Ultrasonic transducer with silicon. A well known material with new applications Paneva, R.; Temmel, G.; Ryssel, H. | Konferenzbeitrag |
1994 | Analytical description of high energy implantation profiles of bordon and phosphorus into crystalline silicon Gong, L.; Bogen, S.; Frey, L.; Jung, W.; Ryssel, H. | Zeitschriftenaufsatz |
1994 | Applications of single-beam photothermal analysis Schork, R.; Krügel, S.; Schneider, C.; Pfitzner, L.; Ryssel, H. | Zeitschriftenaufsatz |
1994 | Calculation of the transport matrix for the coupled diffusion of dopants and vacancies List, S.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
1994 | Dynamic behavior of arsenic clusters in silicon Bauer, H.; Pichler, P.; Ryssel, H. | Konferenzbeitrag |
1994 | Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R. | Konferenzbeitrag |
1994 | Das europäische Mikroelektronikprogramm Jessi auf Erfolgskurs Ryssel, H. | Zeitschriftenaufsatz |
1994 | High dose and intense implantation of the multiply charged Al plus n, Ti plus n and C plus n into alfa-iron Pogrebnjak, A.D.; Bakharev, O.G.; Martynenko, V.A.; Rudenko, V.A.; Brusa, R.; Zecca, A.; Ryssel, H.; Tikhomirov, I.A.; Ryabchikov, A.I.; Öchsner, R. | Zeitschriftenaufsatz |
1994 | Investigation of the effect of altered defect structure produced by photon assisted the diffusion of As in silicon during thermal anneallagation Biro, L.P.; Gyulai, J.; Bogen, S.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1994 | Ion-beam induced CoSi2 layers - formation and contact properties. Dehm, C.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
1994 | Ion-beam mixing of Co-Si and Co-SiO2 - a comparison between Monte Carlo simulations experiments Kasko, I.; Dehm, C.; Gyulai, J.; Ryssel, H. | Zeitschriftenaufsatz |
1994 | Nuclear microprobe application to semiconductor process development - silicide formation and multi-layered structure Takai, M.; Katayama, Y.; Lohner, T.; Kinomura, A.; Ryssel, H.; Tsien, P.H.; Satou, M.; Chayahara, A.; Burte, E.P. | Zeitschriftenaufsatz |
1994 | Observation of local SIMOX layers by microprobe RBS Kinomura, A.; Horino, Y.; Mokuno, Y.; Chayahara, A.; Kiuchi, M.; Fujii, K.; Takai, M.; Lohner, T.; Ryssel, H.; Schork, R. | Zeitschriftenaufsatz |
1994 | Reflection approach for the analytical description of light ion implantation into bilayer structures Wierzbicki, R.J.; Biersack, J.P.; Barthel, A.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
1994 | Simulation of buried layer experiments containing all four dopant species Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G. | Konferenzbeitrag |
1994 | Single crystal growth of Si-Ge alloy by ion implantation and sequential rapid thermal Kal, S.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
1993 | Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H. | Konferenzbeitrag |
1993 | Contamination control and ultrasensitive chemical analysis Ryssel, H.; Frey, L.; Streckfuß, N.; Schork, R.; Kroninger, F.; Falter, T. | Zeitschriftenaufsatz |
1993 | Diffusion and activation of arsenic implanted at high temperature in silicon Yu, Y.H.; Schork, R.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
1993 | Effect of ion-beam mixing temperature on cobalt silicide formation Kasko, I.; Dehm, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
1993 | Halbleiterfertigungsgeräte und -materialien bilden eine wichtige Voraussetzung für die moderne IC-Herstellung Ryssel, H. | Zeitschriftenaufsatz |
1993 | High energy implantation of high10 B and high11 B into -100- silicon in channel and in random Gong, L.; Frey, L.; Bogen, S.; Ryssel, H. | Zeitschriftenaufsatz |
1993 | Improvement of surface properties of polymers by ion implantation Öchsner, R.; Kluge, A.; Zechel-Malonn, S.; Gong, L.; Ryssel, H. | Zeitschriftenaufsatz |
1993 | Influence of impurities on ion beam induced TiSi2 formation Dehm, C.; Raum, B.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
1993 | A novel delineation technique for 2D-profiling of dopants in crystalline silicon Gong, L.; Frey, L.; Bogen, S.; Ryssel, H. | Zeitschriftenaufsatz |
1993 | Photon assisted implantation -PAI- Biro, L.P.; Gyulai, J.; Ryssel, H.; Frey, L.; Kormany, T.; Tuan, N.M. | Zeitschriftenaufsatz |
1993 | Residual stress during local SIMOX process - Raman measurement and simulation Seidl, A.; Takai, M.; Sayama, H.; Haramura, K.; Ryssel, H.; Schork, R.; Kato, K. | Zeitschriftenaufsatz |
1992 | Characterization of metal impurities in silicon-on-insulator material Frey, L.; Kroninger, F.; Streckfuß, N.; Ryssel, H. | Konferenzbeitrag |
1992 | Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H. | Zeitschriftenaufsatz |
1992 | The effect of ion implantation on the lifetime of punches Öchsner, R.; Kluge, A.; Ryssel, H.; Stepper, M.; Straede, C.; Politiek, J. | Konferenzbeitrag |
1992 | The effect of ion implantation on the lifetime of punches Öchsner, R.; Kluge, A.; Ryssel, H.; Stepper, M.; Straede, C.; Politiek, J. | Konferenzbeitrag |
1992 | Ellipsometer zur in-situ-Schichtdickenmessung Berger, R.; Ryssel, H.; Schneider, C.; Aderhold, W. | Patent |
1992 | Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures. Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R. | Zeitschriftenaufsatz |
1992 | Gold and platinum diffusion. The key to the understanding of intrinsic point defect behaviour in silicon Zimmermann, H.; Ryssel, H. | Zeitschriftenaufsatz |
1992 | High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Gyulai, J.; Ryssel, H. | Zeitschriftenaufsatz |
1992 | In situ measurement for resist thickness control and development endpoint detection Roeder, G.; Ryssel, H.; Temmel, G. | Konferenzbeitrag |
1992 | Influence of low-dose ion-beam mixing on CoSi2 formation Kasko, I.; Dehm, C.; Ryssel, H. | Konferenzbeitrag |
1992 | Interaction between Co and SiO2 during ion-beam mixing and rapid thermal annealing Dehm, C.; Kasko, I.; Burte, E.P.; Ryssel, H. | Konferenzbeitrag |
1992 | An investigation of vacancy concentrations in bulk silicon Zimmermann, H.; Ryssel, H. | Konferenzbeitrag |
1992 | The modelling of platinum diffusion in silicon under non-equilibrium conditions Zimmermann, H.; Ryssel, H. | Zeitschriftenaufsatz |
1992 | Reduction of friction and wear by ion-implanted carbonized photoresit Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H. | Konferenzbeitrag |
1992 | Reduction of friction and wear by ion-implanted carbonized photoresit Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H. | Konferenzbeitrag |
1992 | Shallow, titanium-silicided p and n junction formation by triple germanium amorphization Dehm, C.; Gyulai, J.; Ryssel, H. | Zeitschriftenaufsatz |
1992 | Simulation of the step coverage for chemical vapor deposited silicon dioxide Wille, H.; Burte, E.P.; Ryssel, H. | Zeitschriftenaufsatz |
1992 | Verfahren und Vorrichtung zur Herstellung von Solarelementen mit unterschiedlich stark dotierten Bereichen Ryssel, H. | Patent |
1991 | Carrier concentration profiles by high-energy boron ion implantation into silicon Sayama, H.; Takai, M.; Namba, S.; Ryssel, H. | Zeitschriftenaufsatz |
1991 | Characterization and wear tests of steel surfaces implanted with oxygen, aluminium, and carbon dioxide Langguth, K.; Kluge, A.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1991 | Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing Burte, E.P.; Min, Y.; Pei-Hsin, T.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1991 | Direct determination of point-defect equilibrium concentrations Zimmermann, H.; Ryssel, H. | Zeitschriftenaufsatz |
1991 | Effect of deposition temperature of arsenic implanted poly-Si-on-insulator on grain size and residual stress Takai, M.; Kato, K.; Namba, S.; Pfannenmüller, U.; Ryssel, H. | Zeitschriftenaufsatz |
1991 | Formation and contact properties of titanium-silicided shallow junctions Dehm, C.; Gyulai, J.; Ryssel, H. | Konferenzbeitrag |
1991 | Formation of cobalt silicide by ion beam mixing Burte, E.P.; Min, Y.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1991 | Oblique ion implantation into nonplanar targets Takai, M.; Namba, S.; Ryssel, H. | Zeitschriftenaufsatz |
1991 | Observation of inverse u-shaped profiles after platinum diffusion in silicon Zimmermann, H.; Ryssel, H. | Zeitschriftenaufsatz |
1991 | Radiation-enhanced diffusion during high-temperature ion implantation Schork, R.; Kluge, A.; Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
1990 | Meßtechnik und Analytik für Halbleiterfertigungsgeräte Eichinger, P.; Pfitzner, L.; Ryssel, H.; Schneider, C. | Konferenzbeitrag |
1990 | Sicherheit bei Halbleiterfertigungsgeräten Streckfuß, N.; Pfitzner, L.; Ryssel, H.; Ryzlewicz, C. | Tagungsband |
1990 | Simulation of silicon semiconductor processing Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
1990 | Trends in practical process simulation. Pichler, P.; Ryssel, H. | Zeitschriftenaufsatz |
1990 | Untersuchungen über Regelparameter in einer Lithographiezelle Pfitzner, L.; Ryssel, H.; Temmel, G.; Zielonka, G. | Konferenzbeitrag |
1989 | Chemical and physical processes during the formation of MoSi2 by ion-beam mixing Möller, W.; Ryssel, H.; Valyi, G. | Zeitschriftenaufsatz, Konferenzbeitrag |
1989 | Entwicklung von Prozessmodulen und in-situ-Meßmethoden für ein Flexibles Fotolithografisches Prozeßzentrum Temmel, G.; Zielonka, G.; Olbrich, H.; Mann, R.; Pfitzner, L.; Ryssel, H. | Konferenzbeitrag |
1989 | A flexible target chamber for a Varian 350 DF implanter Kluge, A.; Ryssel, H.; Schork, R. | Zeitschriftenaufsatz, Konferenzbeitrag |
1989 | Improvements in simulation at 2d implantation profiles Gong, L.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1989 | Internal process control and automation for semiconductor manufacturing equipment Pfitzner, L.; Ryssel, H.; Schneider, C. | Konferenzbeitrag |
1989 | International process control and automation for semiconductor manufacturing equipment Pfitzner, L.; Ryssel, H.; Schneider, C. | Konferenzbeitrag |
1989 | Ion implantation in single-crystal magnetic ferrite. Takai, M.; Lu, Y.F.; Minamisono, T.; Namba, S.; Ryssel, H. | Zeitschriftenaufsatz |
1989 | Ion-beam mixed MoSi2 layers - formation and contract properties Dehm, C.; Gyulai, J.; Ryssel, H.; Valyi, G. | Konferenzbeitrag |
1989 | One- and two-dimensional process simulation with ICECREM and COMPLAN. Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1989 | Programs for VLSI process simulation Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H. | Konferenzbeitrag |
1989 | Prozeßtechnische Aspekte fortschrittlicher Halbleiterfertigungsgeräte Pfitzner, L.; Ryssel, H.; Schmutz, W. | Zeitschriftenaufsatz |
1989 | Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik Lorenz, J.; Pelka, J.; Ryssel, H. | Zeitschriftenaufsatz |
1989 | Simulation of the lateral spread of implanted ions - experiments Gong, L.; Barthel, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1989 | Two-dimensional simulation of ion implantation profiles using a personal computer Barthel, A.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1989 | A versatile ion implanter for material modification Kluge, A.; Öchsner, R.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1988 | A comparison of the wear behavior of Ag, B, C, N, Pb and Sn implanted steels with 1.5 to 1.8 % chromium Langguth, K.; Kobs, K.; Kluge, A.; Öchsner, R.; Ryssel, H. | Tagungsband |
1988 | CW argon-laser induced zone-melting recrystallization of thin silicon on oxide. Ryssel, H.; Götzlich, J.; Steinberger, H.; Qiuxia, X | Zeitschriftenaufsatz |
1988 | CW argon-laser-induced zone-melting recrystallization of thin silicon on oxide Ryssel, H.; Götzlich, J.; Qiuxia, X; Steinberger, H. | Zeitschriftenaufsatz |
1988 | Examination of wear, hardness and friction of N, B, C, Ag, Pb and Sn implanted steels with different chromium content Langguth, K.; Kobs, K.; Kluge, A.; Öchsner, R.; Ryssel, H. | Tagungsband |
1988 | The influence of implantation parameters and annealing conditions on the formation and properties of MoSi2 layers. Dehm, C.; Möller, W.; Ryssel, H.; Valyi, G. | Aufsatz in Buch |
1988 | Safety aspects of ion implantation. Ryssel, H. | Konferenzbeitrag |
1988 | Safety consideration for ion implanters. Hamers, P.; Ryssel, H. | Aufsatz in Buch |
1987 | Adhesive and abrasive wear study of nitrogen implanted steels Kobs, K.; Dimingen, H.; Leutenecker, R.; Ryssel, H. | Konferenzbeitrag |
1987 | Comparison of Monte Carlo simulations and analytical models for the calculation of implantation profiles in multilayer targets Krueger, W.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
1987 | Enhanced endurance life of sputtered MoSX filsm on steel by ion beam mixing. Kobs, H.; Dimigen, H.; Hübsch, H.; Tolle, H.J.; Leutenbecker, R.; Ryssel, H. | Zeitschriftenaufsatz |
1987 | The fabrication and investigation of MoSi2 layers Valyi, G.; Ryssel, H.; Möller, W. | Konferenzbeitrag |
1987 | Ion implantation into non-planar targets - Monto Carlo simulations and analytical models Krueger, W.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
1987 | Monte Carlo ion implantation and COMPOSITE Lorenz, J.; Ryssel, H.; Barthel, A. | Konferenzbeitrag |
1987 | Prozeßüberwachung bei Halbleiterfertigungsgeräten Ryssel, H.; Pfitzner, L. | Konferenzbeitrag |
1987 | Studie über den Stand der Technik und zukünftige Anforderungen an Fertigungseinrichtungen zur Herstellung von Halbleiterbauelementen unter Berücksichtigung verschiedener Herstellungsverfahren Aderhold, W.; Frühauf, W.; Herz, R.; Kahlden, T. von; Pfitzner, L.; Ryssel, H.; Sauter, K.-D.; Schmutz, W.; Schraft, R.D. | Studie |
1986 | Anforderungen an den Reinraum aus der Sicht der Halbleitertechnologie Ryssel, H.; Pfitzner, L. | Konferenzbeitrag |
1986 | Improved tribilogical properties of sputtered MoSx films by ion beam mixing Kobs, K.; Dimigen, H.; Huebsch, H.; Tolle, H.J.; Leutenecker, R.; Ryssel, H. | Zeitschriftenaufsatz |
1986 | Ion implantation models for process simulation. Chapter 2 Ryssel, H.; Biersack, J.P. | Aufsatz in Buch |
1986 | Mikroelektronik und Reinraumtechnik Ryssel, H. | Konferenzbeitrag |
1986 | Models for implantation into multilayer targets Ryssel, H.; Lorenz, J.; Hoffmann, K. | Zeitschriftenaufsatz |
1986 | Neue Technologien fuer hoechstintegrierte Schaltkreise Ryssel, H. | Zeitschriftenaufsatz |
1986 | Studie ueber den Stand der Technik und zukuenftige Anforderungen an Fertigungseinrichtunen zur Herstellung von Halbleiterbauelementen unter Beruecksichtigungen verschiedener Herstellungsverfahren Aderhold, W.; Fruehauf, W.; Herz, R.; Kahlden, T. von; Pfitzner, L.; Ryssel, H.; Sauter, K.-D.; Schmutz, W.; Schraft, R.D. | Studie |
1985 | COMPOSITE - A complete modelling program of silicon technology Pelka, J.; Lorenz, J.; Ryssel, H.; Sachs, A.; Seidl, S.; Svoboda, M. | Zeitschriftenaufsatz |
1983 | Anwendung des Laserausheilens fuer Halbleiterbauelemente Ryssel, H.; Goetzlich, J. | Zeitschriftenaufsatz |
1983 | CO2-laser annealing of ion implanted silicon - relaxation characteristics of metastable concentrations Goetzlich, J.; Tsien, P.H.; Henghuber, G.; Ryssel, H. | Aufsatz in Buch |
1983 | Implantation and diffusion models for process simulation Ryssel, H.; Prinke, G.; Hoffmann, K. | Aufsatz in Buch |
1983 | Implantation doping of germanium with Be, Mg, Zn und B-ions Metzger, M.; Zhang, Z.; Schmiedt, B.; Ryssel, H. | Aufsatz in Buch |
1983 | Ion beam lithography Ryssel, H.; Haberger, K. | Aufsatz in Buch |
1983 | Laser annealing Ryssel, H.; Goetzlich, J. | Aufsatz in Buch |
1983 | Simulation of the lithographic properties of ion-beam resists Haberger, K.; Hoffmann, K.; Forster, M.; Ryssel, H. | Aufsatz in Buch |
1983 | Studies on the lattice position of boron in silicon Fink, D.; Carstanjen, H.D.; Jahnel, F.; Muller, K.; Ryssel, H.; Osei, A.; Biersack, J.P. | Zeitschriftenaufsatz |
1982 | Ion beam exposure of resists. Ryssel, H.; Prinke, G.; Bernt, H.; Haberger, K.; Hoffmann, K. | Zeitschriftenaufsatz |
1982 | Ion implantation for very large scale integration. Ryssel, H. | Aufsatz in Buch |
1982 | Ion Implantation. Ryssel, H. | Aufsatz in Buch |
1982 | Non-electrical measuring techniques. Eichinger, P.; Ryssel, H. | Aufsatz in Buch |
1982 | Range distributions. Ryssel, H. | Aufsatz in Buch |
1981 | Annealing of boron-implanted silicon using a CW CO2-laser. Tsien, P.H.; Tsou, S.C.; Takai, M.; Roeschenthaler, D.; Ramin, M.; Ryssel, H.; Ruge, I.; Wittmaack, K. | Zeitschriftenaufsatz |
1981 | Arsenic implanted polysilicon layers. Ryssel, H.; Bleier, M.; Prinke, G.; Haberger, K.; Kranz, H.; Iberl, F. | Zeitschriftenaufsatz |
1981 | CO2 laser annealing characteristics of high-dose boron and arsenic-implanted silicon. Tsien, P.H.; Goetzlich, J.; Ryssel, H.; Ruge, I. | Zeitschriftenaufsatz |
1981 | Description of arsenic and boron profiles implanted into SiO2, Si3N4, and Si using Pearson distributions with four moments. Jahnel, J.; Ryssel, H.; Prinke, G.; Hoffmann, K.; Mueller, K.; Henkelmann, R.; Biersack, J.P. | Zeitschriftenaufsatz |
1981 | Ion beam sensitivity of polymer resists. Ryssel, H.; Haberger, K.; Kranz, H. | Zeitschriftenaufsatz |
1981 | Nd-YAG laser annealing of arsenic-implanted silicon - dependence upon scanning speed and power density. Tsien, P.H.; Ryssel, H.; Roeschenthaler, D.; Ruge, I. | Zeitschriftenaufsatz |
1981 | Nd-YAG laser annealing of arsenic-implanted silicon - Relaxation of metastable concentration by means of CO2-laser irradiation. Tsien, P.H.; Ryssel, H.; Roeschenthaler, D.; Ruge, I. | Zeitschriftenaufsatz |
1981 | Nd-YAG laser annealing of gallium-implanted silicon. Takai, M.; Tsou, S.C.; Tsien, P.H.; Roeschenthaler, D.; Ryssel, H. | Zeitschriftenaufsatz |
1981 | Resist investigation for ion-beam lithography. Ryssel, H.; Kranz, H.; Haberger, K.; Bosch, J. | Konferenzbeitrag |
1981 | Tapered windows in SiO2, Si3N4, and polysilicon layers by ion implantation. Goetzlich, G.; Ryssel, H. | Zeitschriftenaufsatz |
1980 | Verfahren und Vorrichtung zum Dotieren von Halbleitern mittels Ionenimplantation Ryssel, H. | Patent |