Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1997Molecular beam epitaxy of Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As heterostructures on metamorphic Al(x)Ga(y)In(1-x-y)As buffer layers
Haupt, M.; Köhler, K.; Ganser, P.; Müller, S.; Rothemund, W.
Zeitschriftenaufsatz
1996Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Haupt, M.; Ganser, P.; Köhler, K.; Emminger, S.; Müller, S.; Rothemund, W.
Konferenzbeitrag
1996Growth of high quality Al(0,48)In(0,52)As/Ga(0,47)In(0,53)As heterostructures using strain relaxed Al(x)Ga(y)In(1-x-y)As buffer layers on GaAs
Haupt, M.; Köhler, K.; Ganser, P.; Emminger, S.; Müller, S.; Rothemund, W.
Zeitschriftenaufsatz
1996Influence of interdiffusion processes on optical and structural properties of pseudomorphic In(0.35)Ga(0.65)As/GaAs multiple quantum well structures
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Rothemund, W.; Ralston, J.D.
Zeitschriftenaufsatz
1995Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Zeitschriftenaufsatz
1995Impurity free selective interdiffusion of pseudomorphic InyGa1-yAs/GaAs multiple quantum well laser and modulator structures
Bürkner, S.; Larkins, E.C.; Baeumler, M.; Wagner, J.; Rothemund, W.; Flemig, G.; Ralston, J.D.
Zeitschriftenaufsatz
1995Process parameter dependence of Imurity-free interdiffusion in GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs multible quantum wells
Bürkner, S.; Maier, M.; Larkins, E.C.; Rothemund, W.; O'Reilly, E.P.; Ralston, J.D.
Zeitschriftenaufsatz
1995Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III-V quantum-well structures
Sah, R.E.; Ralston, J.D.; Eichin, G.; Dischler, B.; Rothemund, W.; Wagner, J.; Larkins, E.C.; Baumann, H.
Zeitschriftenaufsatz
1994Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Flemig, G.; Rothemund, W.; Ralston, J.D.
Konferenzbeitrag
1994Diamond luminescence - resolved donor-acceptor pair recombination lines.
Dischler, B.; Rothemund, W.; Maier, K.; Wild, C.; Biebl, H.; Koidl, P.
Zeitschriftenaufsatz
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1994High quality MOCVD-grown AlGaInP/GaAs MODFET structures - an example of successful interface engineering.
Pletschen, W.; Bachem, K.H.; Rothemund, W.; Winkler, K.; Fekete, D.
Konferenzbeitrag
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Konferenzbeitrag
1994MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R.
Konferenzbeitrag
1994Resolved donor-acceptor pair-recombination lines in diamond luminescence
Dischler, B.; Rothemund, W.; Wild, C.; Locher, R.; Biebl, H.; Koidl, P.
Zeitschriftenaufsatz
1993Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices.
Ralston, J.D.; Larkins, E.C.; Rothemund, W.; Esquivias, I.; Weisser, S.; Rosenzweig, J.; Fleissner, J.
Zeitschriftenaufsatz
1993MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures.
Larkins, E.C.; Rothemund, W.; Maier, M.; Wang, Z.M.; Ralston, J.D.; Jantz, W.
Zeitschriftenaufsatz
1993Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE.
Larkins, E.C.; Bender, G.; Schneider, H.; Ralston, J.D.; Rothemund, W.; Dischler, B.; Fleissner, J.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1992Anisotropic electrical conduction in GaAs/In 0.2 Ga 0.8 As/Al 0.3 Ga 0.7 As strained heterostructures beyond the critical layer thickness.
Hiesinger, P.; Schweizer, T.; Rothemund, W.; Ganser, P.; Jantz, W.; Köhler, K.
Zeitschriftenaufsatz
1992Determination of acceptor binding energies in ZnSe.
Hingerl, K.; Jantsch, W.; Juza, P.; Lang, M.; Sitter, H.; Lilja, J.; Pessa, M.; Rothemund, W.; As, D.J.
Zeitschriftenaufsatz
1992Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Schweizer, T.; Köhler, K.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1992OMVPE-grown AlxGa1-x0.5In0.5P/InGaAs MODFET structures - growth procedure and hall properties.
Bachem, K.H.; Fekete, D.; Pletschen, W.; Rothemund, W.; Winkler, K.
Zeitschriftenaufsatz
1991Electrical and optical properties of As and Li doped ZnSe films.
Hingerl, K.; Lilja, J.; Toivonen, M.; Pessa, M.; Jantsch, W.; As, D.J.; Rothemund, W.; Juza, P.; Sitter, H.
Konferenzbeitrag
1991Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures.
Schweizer, T.; Rothemund, W.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1990Characterization of CdTe crystals by chemical etching and cathodoluminescence measurements
Moritz, R.; Rothemund, W.; Brandt, G.; Ennen, H.
Zeitschriftenaufsatz
1990Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy.
As, D.J.; Rothemund, W.; Hingerl, K.; Sitter, H.
Zeitschriftenaufsatz
1990Influence of RIE- induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures.
As, D.J.; Kaufel, G.; Köhler, K.; Rothemund, W.; Zappe, H.P.; Jantz, W.; Schweizer, T.; Frey, T.
Zeitschriftenaufsatz
1990Photolytic silicon nitride deposition for gallium arsenide by 193 excimer laser radiation
Rothemund, W.; Dischler, B.; Eisele, K.M.
Zeitschriftenaufsatz
1990Structural, electrical and optical characterization of single-crystal ErAs layers grown on GaAs by MBE.
Ralston, J.D.; Hiesinger, P.; Schneider, J.; Müller, H.D.; Rothemund, W.; Fuchs, F.; Schmälzlin, J.; Thonke, K.; Herres, N.; Ennen, H.; Wennekers, P.
Zeitschriftenaufsatz
1990Verfahren zur Herstellung einer Aetzmaske durch Ionenstrahllithographie
Rothemund, W.; Fritzsche, C.
Patent
1989Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs.
Rothemund, W.; Wagner, J.; Wettling, W.; Windscheif, J.
Zeitschriftenaufsatz
1989Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs.
Rothemund, W.; Wagner, J.; Wettling, W.; Windscheif, J.
Zeitschriftenaufsatz