Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Advanced building blocks for (sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Massler, H.; Moschetti, G.; Rösch, M.; Weber, R.; Hurm, V.; Kuri, M.; Zink, M.; Riessle, M.; Rosenzweig, J.; Ambacher, O.
Konferenzbeitrag
2013A highly linear transimpedance amplifier in InP technology for application in 100 Gbit/s fiber optical data communication
Ferenci, D.; Grözing, M.; Berroth, M.; Makon, R.E.; Driad, R.; Rosenzweig, J.; Schlechtweg, M.
Konferenzbeitrag
2013Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Massler, H.; Wagner, S.; Aidam, R.; Rosenzweig, J.; Ambacher, O.; Kallfass, I.; Lewark, U.J.; Sommer, R.; Wahlen, A.; Stanko, S.; Ender, J.
Konferenzbeitrag
2012A 25 GHz analog demultiplexer with a novel track and hold circuit for a 50 GS/s A/D-conversion system in InP DHBT technology
Ferenci, D.; Grözing, M.; Berroth, M.; Makon, R.E.; Driad, R.; Rosenzweig, J.
Konferenzbeitrag
2012Millimeter-wave monolithic integrated circuits and modules for safety and security applications
Schlechtweg, Michael; Tessmann, Axel; Hülsmann, Axel; Kallfass, Ingmar; Leuther, Arnulf; Aidam, Rolf; Zech, Christian; Lewark, U.J.; Massler, Hermann; Rießle, Markus; Zink, Martin; Rosenzweig, Josef; Ambacher, O.
Konferenzbeitrag
2011100 - 112 Gbit/s complete ETDM systems based on monolithically integrated transmitter and receiver modules
Ke, W.; Jie, L.; Djupsjöbacka, A.; Chacinski, M.; Westergren, U.; Popov, S.; Jacobsen, G.; Hurm, V.; Makon, R.E.; Driad, R.; Walcher, H.; Rosenzweig, J.; Steffan, A.G.; Mekonnen, G.G.; Bach, H.-G.; Zhuo, L.; Friberg, A.
Zeitschriftenaufsatz
2011100 Gb/s RZ-OOK transmission through 212 km deployed SSMF using monolithically integrated ETDM receiver module
Wang, K.; Li, J.; Djupsjöbacka, A.; Popov, S.; Jacobsen, G.; Makon, R.E.; Driad, R.; Walcher, H.; Rosenzweig, J.; Steffan, A.G.; Mekonnen, G.G.; Bach, H.-G.; Li, Z.; Friberg, A.
Zeitschriftenaufsatz
2011InP DHBT-based IC technology for 100-Gb/s ethernet
Driad, R.; Rosenzweig, J.; Makon, R.E.; Lösch, R.; Hurm, V.; Walcher, H.; Schlechtweg, M.
Zeitschriftenaufsatz
2011Ultra-high-speed transmitter and receiver ICs for 100 Gbit/s ethernet using InP DHBTs
Makon, R.E.; Driad, R.; Rosenzweig, J.; Hurm, V.; Walcher, H.; Schlechtweg, M.; Ambacher, O.; Schubert, C.
Konferenzbeitrag
2010100 Gb/s complete ETDM system based on monolithically integrated transmitter and receiver modules
Wang, K.; Li, J.; Djupsjöbacka, A.; Chacinski, M.; Westergren, U.; Popov, S.; Jacobsen, G.; Hurm, V.; Makon, R.E.; Driad, R.; Walcher, H.; Rosenzweig, J.; Steffan, A.G.; Mekonnen, G.G.; Bach, H.-G.
Konferenzbeitrag
2010107-112 Gbit/s fully integrated CDR/1:2 DEMUX using InP-based DHBTs
Makon, R.E.; Driad, R.; Schubert, C.; Fischer, J.; Lösch, R.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2010112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE
Li, J.; Schubert, C.; Derksen, R.H.; Makon, R.E.; Hurm, V.; Djupsjöbacka, A.; Chacinski, M.; Westergren, U.; Bach, H.-G.; Mekonnen, G.G.; Steffan, A.G.; Driad, R.; Walcher, H.; Rosenzweig, J.
Konferenzbeitrag
2010Advanced metamorphic HEMT submillimeter-wave monolithic integrated circuits and modules up to 320 GHz
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Kallfass, I.; Hurm, V.; Massler, H.; Rosenzweig, J.; Zink, M.; Riessle, M.; Lösch, R.
Konferenzbeitrag
2010Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors
Driad, R.; Lösch, R.; Benkhelifa, F.; Kuri, M.; Rosenzweig, J.
Zeitschriftenaufsatz
2010ETDM transmitter module for 100-Gb/s ethernet
Chacinski, M.; Westergren, U.; Thylen, L.; Stoltz, B.; Rosenzweig, J.; Driad, R.; Makon, R.E.; Li, J.; Steffan, A.G.
Zeitschriftenaufsatz
2010High linearity 2-bit current steering InP/GaInAs DHBT digital-to-analog converter
Kraus, S.; Kallfass, I.; Makon, R.E.; Rosenzweig, J.; Driad, R.; Moyal, M.; Ritter, D.
Konferenzbeitrag
2010Setting the stage for 100GbE serial standard - the HECTO project
Derksen, R.H.; Wang, K.; Li, J.; Djupsjöbacka, A.; Jacobsen, G.; Chacinski, M.; Westergren, U.; Popov, S.; Hurm, V.; Makon, R.E.; Driad, R.; Walcher, H.; Rosenzweig, J.; Steffan, A.G.; Mekonnen, G.G.; Bach, H.-G.; Schubert, C.
Konferenzbeitrag
2010Transceiver modules utilizing travelling-wave electro-absorption modulator
Chacinski, M.; Westergren, U.; Stoltz, B.; Rosenzweig, J.; Driad, R.; Makon, R.E.; Li, J.; Steffan, A.G.; Hurm, V.
Konferenzbeitrag
2009High performance compound semiconductor devices and integrated circuits for advanced communication, sensor, and imaging applications
Schlechtweg, M.; Makon, R.E.; Hurm, V.; Driad, R.; Tessmann, A.; Kallfass, I.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.
Konferenzbeitrag
2009High-performance MMICs and high-speed mixed-signal ICs based on III/V HEMT and HBT technology for sensors and communication
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Massler, H.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.; Kuri, M.
Konferenzbeitrag
2009InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s
Makon, R.E.; Driad, R.; Lösch, R.; Rosenzweig, J.; Schlechtweg, M.; Ambacher, O.
Zeitschriftenaufsatz
2009InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications
Hurm, V.; Makon, R.E.; Driad, R.; Benkhelifa, F.; Lösch, R.; Massler, H.; Riessle, M.; Rosenzweig, J.; Schlechtweg, M.; Tessmann, A.; Walcher, H.
Zeitschriftenaufsatz
2009InP-based DHBT technology for high-speed mixed signal and digital applications
Driad, R.; Makon, R.E.; Hurm, V.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Schlechtweg, M.
Konferenzbeitrag
2009MMICs and mixed-signal ICs based on III/V technology for highest frequencies and data rates
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.
Zeitschriftenaufsatz
2008100 Gbit/s fully integrated InP DHBT-based CDR/1:2 DEMUX IC
Makon, R.E.; Driad, R.; Lösch, R.; Rosenzweig, J.; Schlechtweg, M.
Konferenzbeitrag
2008InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation
Hurm, V.; Benkhelifa, F.; Driad, R.; Lösch, R.; Makon, R.E.; Massler, H.; Rosenzweig, J.; Schlechtweg, M.; Walcher, H.
Zeitschriftenaufsatz
2008InP DHBT-based ICs for 100 Gbit/s data transmission
Driad, R.; Makon, R.E.; Hurm, V.; Schneider, K.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.
Konferenzbeitrag
2003Hybrid integrated optical receivers for high-speed data transmission
Leich, M.; Hurm, V.; Berger, J.; Dietrich, E.; Sohn, J.; Leuther, A.; Bronner, W.; Köhler, K.; Lösch, R.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M.
Konferenzbeitrag
200265 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier
Leich, M.; Hurm, V.; Sohn, J.; Feltgen, T.; Bronner, W.; Köhler, K.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M.
Zeitschriftenaufsatz
2002High conversion gain flip-chip integrated photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Ludwig, M.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.
Konferenzbeitrag
2002Large area MSM photodiode array for 0.85µm wavelength 10 Gbit/s per channel parallel optical links
Hurm, V.; Bronner, W.; Benz, W.; Köhler, K.; Kropp, J.-R.; Lösch, R.; Ludwig, M.; Mann, G.; Mikulla, M.; Rosenzweig, J.; Schlechtweg, M.; Walther, M.; Weimann, G.
Zeitschriftenaufsatz
2002Narrow-band photoreceiver at 10 GHz with a flip-chip mounted 1.55 µm waveguide photodiode
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M.
Zeitschriftenaufsatz
2001Complete monolithic integrated 2.5 Gbit/s optoelectronic receiver with large area MSM photodiode for 850 nm wavelength
Lang, M.; Bronner, W.; Benz, W.; Ludwig, M.; Hurm, V.; Kaufel, G.; Leuther, A.; Rosenzweig, J.; Schlechtweg, M.
Zeitschriftenaufsatz
2001Design of narrow-band photoreceivers by means of the photodiode intrinsic conductance
Leven, A.; Hurm, V.; Reuter, R.; Rosenzweig, J.
Zeitschriftenaufsatz
2001High conversion gain 10-GHz narrow-band photoreceiver with a flip-chip mounted 1.55 µm waveguide photodiode
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.
Konferenzbeitrag
200040 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier
Leven, A.; Hurm, V.; Bronner, W.; Köhler, K.; Walcher, H.; Kiefer, R.; Fleißner, J.; Rosenzweig, J.; Schlechtweg, M.
Konferenzbeitrag
2000Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique
Arias, J.; Esquivias, I.; Larkins, E.C.; Burkner, S.; Weisser, S.; Rosenzweig, J.
Zeitschriftenaufsatz
2000Monolithic and hybrid integrated GaAs-based photoreceivers for 40 Gbit/s optical communication
Hurm, V.; Leven, A.; Benz, W.; Berking, M.; Bronner, W.; Hülsmann, A.; Köhler, K.; Ludwig, M.; Massler, H.; Rosenzweig, J.; Schlechtweg, M.; Sohn, J.; Walcher, H.; Weimann, G.
Konferenzbeitrag
1999Carrier capture and escape processes in In(0.25)Ga(0.75)As-GaAs quantum-well lasers
Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J.
Zeitschriftenaufsatz
1999Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1999Intensity modulation and chirp of 1.55-mu m multiple-quantum well laser diodes. Modeling and experimental verification
Czotscher, K.; Weisser, S.; Leven, A.; Rosenzweig, J.
Zeitschriftenaufsatz
1999Millimeter-wave long-wavelength integrated optical receivers grown on GaAs
Baeyens, Y.; Leven, A.; Bronner, W.; Hurm, V.; Reuter, R.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.
Zeitschriftenaufsatz
199820 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy
Kiefer, R.; Lösch, R.; Walcher, H.; Walther, M.; Weisser, S.; Czotscher, K.; Benz, W.; Rosenzweig, J.; Herres, N.; Maier, M.; Manz, C.; Pletschen, W.; Braunstein, J.; Weimann, G.
Konferenzbeitrag
199820-Gb/s 14-k ohm transimpedance long-wavelength MSM-HEMT photoreceiver OEIC
Lao, Z.; Hurm, V.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Zeitschriftenaufsatz
199840 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Konferenzbeitrag
199840 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Zeitschriftenaufsatz
1998GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m
Leven, A.; Baeyens, Y.; Benz, W.; Bronner, W.; Hülsmann, A.; Hurm, V.; Jakobus, T.; Köhler, K.; Ludwig, M.; Reuter, R.; Rosenzweig, J.; Schlechtweg, M.
Konferenzbeitrag
199710 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Dammann, M.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.
Zeitschriftenaufsatz
199720 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Windscheif, J.
Zeitschriftenaufsatz
1997Carrier escape time in quantum well lasers: dependence on injection level, doping concentration, and temperature
Romero, B.; Esquivias, I.; Arias, J.; Batko, G.; Weisser, S.; Rosenzweig, J.
Konferenzbeitrag
1997Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
Arias, J.; Esquivias, I.; Bürkner, S.; Chazan, P.; Ralston, J.D.; Larkins, E.C.; Mikulla, M.; Weisser, S.; Rosenzweig, J.
Konferenzbeitrag
1997Chirp characteristics of 1.55 mu m InGaAs/InGaAlAs multiple quantum well laser diodes
Czotscher, K.; Weisser, S.; Länge, R.; Benz, W.; Burkhard, H.; Hillmer, H.; Steinhagen, F.; Kiefer, R.; Lösch, R.; Pletschen, W.; Walcher, H.; Walther, M.; Rosenzweig, J.
Konferenzbeitrag
1997High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Windscheif, J.
Konferenzbeitrag
1997Lateral carrier profile for mesa-structured InGaAs/GaAs lasers
Torre, M.S.; Esquivias, I.; Romero, B.; Czotscher, K.; Weisser, S.; Ralston, J.D.; Larkins, E.; Benz, W.; Rosenzweig, J.
Zeitschriftenaufsatz
1997Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S.
Konferenzbeitrag
1997Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
199610 Gbit/s long-wavelength monolithic integrated optoelectronic receeiver grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Fink, T.; Haupt, M.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.
Zeitschriftenaufsatz
199620 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Ludwig, M.; Olander, E.; Raynor, B.; Rosenzweig, J.
Zeitschriftenaufsatz
1996Carrier capture and escape times in In(0,35)Ga(0,65)As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1996Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J.
Konferenzbeitrag
1996Carrier profile for In(0.35)Ga(0.65)As/GaAs multiquantum well lasers from capacitance-voltage measurements
Arias, J.; Esquivias, I.; Ralston, J.D.; Larkins, E.C.; Weisser, S.; Rosenzweig, J.; Schönfelder, A.; Maier, M.
Zeitschriftenaufsatz
1996Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.
Zeitschriftenaufsatz
1996High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy
Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A.
Konferenzbeitrag
1996Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes
Schönfelder, A.; Ralston, J.D.; Czotscher, K.; Weisser, S.; Rosenzweig, J.; Larkins, E.C.
Zeitschriftenaufsatz
1996Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
Czotscher, K.; Weisser, S.; Larkins, E.C.; Fleissner, J.; Ralston, J.D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I.
Zeitschriftenaufsatz
1996Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Konferenzbeitrag
19951.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J.
Zeitschriftenaufsatz
199537 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with c-doped active regions
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Konferenzbeitrag
1995CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions
Weisser, S.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.
Aufsatz in Buch
1995Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Zeitschriftenaufsatz
1995Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes
Schönfelder, A.; Weisser, S.; Larkins, E.C.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Czotscher, K.; Rosenzweig, J.
Konferenzbeitrag
1995Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion
Bürkner, S.; Ralston, J.D.; Weisser, S.; Sah, R.E.; Fleissner, J.; Larkins, E.C.; Rosenzweig, J.
Zeitschriftenaufsatz
19941.3 mym monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J.
Konferenzbeitrag
1994Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.; Arias, J.
Konferenzbeitrag
1994DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping
Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J.
Konferenzbeitrag
1994Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Bronner, W.; Hornung, J.; Köhler, K.
Konferenzbeitrag
1994Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers - influence of strain and p-doping
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1994Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K.
Konferenzbeitrag
1994Impedance characteristics of quantum-wells lasers
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Romero, B.; Rosenzweig, J.
Zeitschriftenaufsatz
1994Impedance, modulation response, and equivalent circuit of ultra-high-speed In0.35Ga0.65As/MQW lasers with p-doping
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1994Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J.
Konferenzbeitrag
1994Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K.
Zeitschriftenaufsatz
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Konferenzbeitrag
1994Optical response of a pseudomorphic HFET photodetector up to 10 GHz. TH1D-6
Bangert, A.; Rosenzweig, J.; Ludwig, M.; Bronner, W.; Hofmann, P.; Köhler, K.
Konferenzbeitrag
1994Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors.
Klingenstein, M.; Kuhl, J.; Rosenzweig, J.; Moglestue, C.; Hülsmann, A.; Schneider, J.; Köhler, K.
Zeitschriftenaufsatz
1994Theoretical investigation of gain enhancements in strained In0.35Ga0.65As/Gas MQW lasers via p-doping.
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1994Voltage dependence of the optical response of a pseudomorphic HFET-photodetector
Bangert, A.; Rosenzweig, J.; Bosch, R.; Bronner, W.; Köhler, K.; Raynor, B.
Konferenzbeitrag
199314 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver.
Hurm, V.; Ludwig, M.; Rosenzweig, J.; Benz, W.; Berroth, M.; Bosch, R.; Bronner, W.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Zeitschriftenaufsatz
199330 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Konferenzbeitrag
1993Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J.
Konferenzbeitrag
1993Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1993Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Zeitschriftenaufsatz
1993Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices.
Ralston, J.D.; Larkins, E.C.; Rothemund, W.; Esquivias, I.; Weisser, S.; Rosenzweig, J.; Fleissner, J.
Zeitschriftenaufsatz
1993Experimentelle Modellierung von ultraschnellen MSM-Photodioden mit hoher Modellparameter-Extraktionsschärfe
Stolze, A.; Novotny, M.; Kompa, G.; Rosenzweig, J.; Bosch, R.; Ludwig, M.
Konferenzbeitrag
1993Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers
Weisser, S.; Tasker, P.J.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.
Konferenzbeitrag
1993Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Konferenzbeitrag
1993Optical control of pseudomorphic HEMT-based MMIC oscillators.
Bangert, A.; Rosenzweig, J.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Schneider, J.
Zeitschriftenaufsatz
1993P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J.
Zeitschriftenaufsatz
1993Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.
Konferenzbeitrag
1993Time-resolved photocurrent response of metal-semiconductor-metal photodetectors to double-pulse excitation.
Klingenstein, M.; Kuhl, J.; Rosenzweig, J.; Moglestue, C.; Hülsmann, A.; Schneider, J.
Zeitschriftenaufsatz
199216 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.
Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P.
Konferenzbeitrag
1992Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J.
Konferenzbeitrag
1992Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Rosenzweig, J.; Fleissner, J.
Konferenzbeitrag
1992Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Zeitschriftenaufsatz
1992Electro-optic and photoconductive sampling of ultrafast photodiodes with femtosecond laser pulses.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Aufsatz in Buch
1992High-frequency characterization of 30 GHz p-type modulation-doped In0.35Ga0.65As/GaAs MQW lasers
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Konferenzbeitrag
1992Indirect optically controlled pseudomorphic HEMT based MMIC oscillator
Bangert, A.; Benz, W.; Hülsmann, A.; Hurm, V.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Rosenzweig, J.
Konferenzbeitrag
1992Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Schönfelder, A.; Larkins, E.C.; Fleissner, J.
Konferenzbeitrag
1992Laser beam testing - fast switches for generation of picosecond electrical pulses.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Zeitschriftenaufsatz
1992Modelling and characterization of high-speed GaAs and In0.35Ga0.65As multiple-quantum-well laser diodes
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Gallagher, D.F.G.
Konferenzbeitrag
1992Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping.
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Konferenzbeitrag
1992Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.
Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Fleissner, J.; Larkins, E.C.; Ralston, J.D.; Rosenzweig, J.
Konferenzbeitrag
1992Picosecond electron and hole transport in metal-semiconductor-metal photodetectors.
Kuhl, J.; Klingenstein, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Zeitschriftenaufsatz
1992Picosecond photodetectors fabricated on low temperature GaAs
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Ploog, K.; Rosenzweig, J.; Moglestue, C.; Schneider, J.; Hülsmann, A.; Köhler, K.
Konferenzbeitrag
1992Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs.
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Hülsmann, A.; Schneider, J.; Köhler, K.; Moglestue, C.; Ploog, K.; Rosenzweig, J.
Zeitschriftenaufsatz
1992X-ray detectors based on semi-insulating GaAs substrate.
Benz, K.W.; Irsigler, R.; Ludwig, J.; Rosenzweig, J.; Runge, K.; Schäfer, F.; Schneider, J.; Webel, M.
Zeitschriftenaufsatz
199110 Gbit/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver.
Hurm, V.; Ludwig, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Rosenzweig, J.
Konferenzbeitrag
199110 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Axmann, A.; Berroth, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Konferenzbeitrag
19918.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mym recessed-gate AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Benz, W.; Huelsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Zeitschriftenaufsatz
1991Characterization of picosecond GaAs metal-semiconductor-metal photodetectors.
Axmann, A.; Schneider, J.; Hülsmann, A.; Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Leier, H.; Forchel, A.; Moglestue, C.; Rosenzweig, J.
Konferenzbeitrag
1991The hot-carrier light emission for GaAs MESFETs
Koch, F.; Herzog, M.; Moglestue, C.; Schneider, J.; Rosenzweig, J.
Konferenzbeitrag
1991Limitations of the impulse response of GaAs metal-semiconductor metal photodetectors.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Moglestue, C.; Axmann, A.; Schneider, J.; Hülsmann, A.; Rosenzweig, J.
Konferenzbeitrag
1991Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors.
Moglestue, C.; Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Schneider, J.; Hülsmann, A.; Rosenzweig, J.
Zeitschriftenaufsatz
1991Subpicosecond carrier lifetimes in radiation-damaged GaAs.
Lambsdorff, M.; Kuhl, J.; Axmann, A.; Schneider, J.; Rosenzweig, J.
Zeitschriftenaufsatz
1991Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes
Lambsdorff, M.; Klingenstein, M.; Kuhl, J.; Moglestue, C.; Rosenzweig, J.; Axmann, A.; Schneider, J.; Hülsmann, A.; Leier, H.; Forchel, A.
Zeitschriftenaufsatz
1991Transit time limited response of GaAs metal-semiconductor-metal photodiodes.
Klingenstein, M.; Kuhl, J.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Zeitschriftenaufsatz
1990Direct observation of the electron and hole contributions in the impulse response of a metal-semiconductor-metal Schottky diode.
Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Moglestue, C.; Axmann, A.; Schneider, J.; Leier, H.; Forchel, A.; Rosenzweig, J.
Konferenzbeitrag
1990Monte Carlo particle calculation and direct observation of the electron and hole contribution to the response of a GaAs-metal semiconductor-metal-Schottky diode to a short light pulse
Moglestue, C.; Axmann, A.; Schneider, J.; Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Leier, H.; Forchel, A.; Rosenzweig, J.
Konferenzbeitrag
1989Acoustoelectric characterization of wide Gap II-VI semiconductors in the case of bipolar photoconduction.
Rosenzweig, J.
Aufsatz in Buch
1989Electromagnetic radiation from hot carriers in FET-devices.
Herzog, M.; Schels, M.; Koch, F.; Moglestue, C.; Rosenzweig, J.
Zeitschriftenaufsatz