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| 2019 | Diamond Schottky-Diode in a non-isolated buck converter
Reiner, Richard; Zürbig, Verena; Pinti, Lucas; Reinke, Philipp; Meder, Dirk; Mönch, Stefan; Benkhelifa, Fouad; Quay, Rüdiger; Cimalla, Volker; Nebel, Christoph E.; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2018 | Flexible and Scalable Heterogeneous Integration of GaN HEMTs on Si‐CMOS by Micro‐Transfer‐Printing
Lerner, R.; Eisenbrandt, S.; Fischer, F.; Fecioru, A.; Trindade, A.J.; Bonafede, S.; Bower, C.; Waltereit, P.; Reiner, R.; Czap, H. | Zeitschriftenaufsatz |
| 2018 | A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching
Waltereit, P.; Preschle, M.; Müller, S.; Kirste, L.; Czap, H.; Ruster, J.; Dammann, M.; Reiner, R. | Konferenzbeitrag |
| 2018 | Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2018 | Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2018 | Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | PCB-embedding for GaN-on-Si power devices and ICs
Reiner, Richard; Weiss, Beatrix; Meder, Dirk; Waltereit, Patrick; Vockenberger, C.; Gerrer, Thomas; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Design and characterization of highly-efficient GaN-HEMTs for power applications
Reiner, Richard
: Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent); Quay, Rüdiger (Betreuer) | Dissertation |
| 2017 | Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2017 | Investigation of GaN-HEMTs in reverse conduction
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Pulse robustness of AlGaN/GaN HEMTs with Schottky- and MIS-gates
Unger, Christian; Mocanu, Mariana; Pfost, Martin; Waltereit, Patrick; Reiner, Richard | Konferenzbeitrag |
| 2017 | Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick | Konferenzbeitrag |
| 2017 | Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan | Konferenzbeitrag |
| 2017 | Thermal stability and failure mechanism of schottky gate AlGaN/GaN HEMTs
Mocanu, Manuela; Unger, Christian; Pfost, Martin; Waltereit, Patrick; Reiner, Richard | Zeitschriftenaufsatz |
| 2016 | Analysis and modeling of GaN-based multi field plate Schottky power diodes
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs
Unger, C.; Mocanu, M.; Pfost, M.; Waltereit, P.; Reiner, R. | Konferenzbeitrag |
| 2016 | A GaN-based 10.1MHz class-F-1 300 W continuous wave amplifier targeting industrial power applications
Maier, F.; Krausse, D.; Gruner, D.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Heterogeneous integration of microscale gallium nitride transistors by micro-transfer-printing
Lerner, R.; Eisenbrandt, S.; Bonafede, S.; Meitl, M.A.; Fecioru, A.; Trindade, A.J.; Reiner, R.; Waltereit, P.; Bower, C. | Konferenzbeitrag |
| 2016 | High voltage GaN-based Schottky diodes in non-isolated LED buck converters
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Integration of GaN HEMTs onto silicon CMOS by micro transfer printing
Lerner, R.; Eisenbrandt, S.; Bower, C.; Bonafede, S.; Fecioru, A.; Reiner, R.; Waltereit, P. | Konferenzbeitrag |
| 2016 | LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers
Zibold, A.; Kunzer, M.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Wagner, J.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O. | Konferenzbeitrag |
| 2016 | Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Mikulla, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
Mönch, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Slew rate control of a 600 V 55 mΩ GaN cascode
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L. | Konferenzbeitrag |
| 2016 | Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Sepahvand, A.; Maksimovic, D. | Konferenzbeitrag |
| 2016 | Study on packaging and driver integration with GaN switches for fast switching
Klein, K.; Hoene, E.; Reiner, R.; Quay, R. | Konferenzbeitrag |
| 2016 | Thermal performance of high-temperature stable die-attachments for GaN HEMTs
Bajwa, A.A.; Reiner, R.; Quay, R.; Wilde, J. | Konferenzbeitrag |
| 2016 | Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
Wespel, M.; Polyakov, V.M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2016 | Vergleichende thermische Untersuchungen von Leistungsbauelementen
Grießer, Jan
: Ambacher, O. (Referent); Quay, R. (Referent); Reiner, R. (Betreuer) | Bachelor Thesis |
| 2015 | Assembly and packaging technologies for high-temperature and high-power GaN devices
Bajwa, A.A.; Qin, Yangyang; Reiner, R.; Quay, R.; Wilde, J. | Zeitschriftenaufsatz |
| 2015 | High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Integrated reverse-diodes for GaN-HEMT structures
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications
Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Schaltungsanordnung
Reiner, Richard | Patent |
| 2015 | Schaltungsanordnung
Reiner, Richard | Patent |
| 2015 | Switching frequency modulation for GaN-based power converters
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Mikulla, M.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Assembly and packaging technologies for high-temperature and high-power GaN HEMTs
Bajwa, A.A.; Qin, Y.; Wilde, J.; Reiner, R.; Waltereit, P.; Quay, R. | Konferenzbeitrag |
| 2014 | Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Müller, S.; Benkhelifa, F.; Mikulla, M.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O. | Zeitschriftenaufsatz |
| 2014 | Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2014 | Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Waltereit, P.; Reiner, R.; Wespel, M.; Weiss, B.; Czap, H.; Dammann, M.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Novel layout and packaging for lateral, low-resistance GaN-on-Si power transistors
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Walcher, H.; Quay, R.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Robust gate driver circuit for monolithic integration with GaN-on-Si 600 V power transistor
Mönch, S.
: Quay, R. (Betreuer); Reiner, R. (Betreuer) | Master Thesis |
| 2013 | Application of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier
Cucak, D.; Vasic, M.; Garcia, O.; Oliver, J.; Alou, P.; Cobos, J.A.; Tadjer, M.; Calle, F.; Benkhelifa, F.; Reiner, R.; Waltereit, P.; Müller, S. | Konferenzbeitrag |
| 2013 | Benchmarking of large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2013 | Effiziente Energiewandlung mit GaN-basierter Leistungselektronik
Waltereit, P.; Reiner, R.; Müller, S.; Czap, H.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2013 | GaN HEMTs and MMICs for space applications
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2013 | GaN-based high voltage transistors for efficient power switching
Waltereit, P.; Reiner, R.; Czap, H.; Peschel, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2013 | Recent developments in GaN HEMTs and MMICs for high power electronics
Waltereit, P.; Bronner, W.; Brueckner, P.; Dammann, M.; Reiner, R.; Müller, S.; Kühn, J.; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | AlGaN/GaN power amplifiers for ISM applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2012 | Fractal structures for low-resistance large area AlGaN/GaN power transistors
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Walcher, H.; Wagner, S.; Quay, R.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Is GaN the ideal material for space?
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Novel III-N devices: Progess on GaN-based DC-DC converters for space
Quay, R.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Reverse bias stress test of GaN HEMTs for high-voltage switching applications
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2011 | AlGaN/GaN power amplifiers for ISM frequency applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2011 | Simulation and analysis of low-resistance AlGaN/GaN HFET power switches
Reiner, R.; Benkhelifa, F.; Krausse, D.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2006 | Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Konferenzbeitrag |
| 2006 | GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G. | Zeitschriftenaufsatz |
| 2005 | An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power
Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Konferenzbeitrag |
| 2004 | Aufbau einer breitbandigen Terahertz Strahlungsquelle und Einsatz als Messtechnik
Reiner, R. | Diplomarbeit |