Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1998A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure
Mörl, L.; Bornholdt, C.; Hoffmann, D.; Matzen, K.; Mekonnen, G.G.; Reier, F.W.
Konferenzbeitrag
1997MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Morl, L.; Weinert, C.M.
Konferenzbeitrag
1997Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Mörl, L.; Weinert, C.M.
Konferenzbeitrag
1996Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
Reier, F.W.; Bornholdt, C.; Hoffmann, D.; Kappe, F.; Mörl, L.
Konferenzbeitrag
199435 GHz bandwidth photonic space switch with travelling wave electrodes on InP
Kappe, F.; Mekonnen, G.G.; Bornholdt, C.; Reier, F.W.; Hoffman, D.
Zeitschriftenaufsatz
1994Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.
Zeitschriftenaufsatz
1993Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures
Agrawal, N.; Reier, F.W.; Bornholdt, C.; Weinert, C.M.; Li, K.C.; Harde, P.; Langenhorst, R.; Grosskopf, G.; Berger, L.; Wegener, M.
Zeitschriftenaufsatz
1993Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R.
Konferenzbeitrag
1992MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications
Reier, F.W.; Harde, P.; Kaiser, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1989Very high purity InP layers grown by adduct-MOVPE
Wolfram, P.; Reier, F.W.; Franke, D.; Schumann, H.
Zeitschriftenaufsatz
1988A novel organo-lithium based production method for trimethylindium
Reier, F.W.; Wolfram, P.; Schumann, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1987Verfahren zur Herstellung von Trimethylphosphin
Reier, F.W.; Wolfram, P.; Schumann, H.
Patent