Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018A 5 W AlGaN/GaN power amplifier MMIC for 25-27 GHz downlink applications
Samis, Stanislav; Friesicke, Christian; Feuerschüz, Philip; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, A.F.
Konferenzbeitrag
2018A beyond 110 GHz GaN cascode low-noise amplifier with 20.3 dBm output power
Weber, Rainer; Ćwikliński, Maciej; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Brueckner, Peter; Quay, Rüdiger
Konferenzbeitrag
2018Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
Schwantuschke, Dirk; Brueckner, Peter; Amirpour, Raul; Tessmann, Axel; Kuri, Michael; Rießle, Markus; Massler, Hermann; Quay, Rüdiger
Konferenzbeitrag
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Zeitschriftenaufsatz
2018Dynamic load modulated low-voltage GaN PA using novel low-loss GaN varactors
Amirpour, Raul; Krause, Sebastian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Entwurf und Charakterisierung monolithischintegrierter Logikschaltungen basierend auf einer lateralen 600 V GaN-on-Si Technologie
Basler, Michael
: Kallfass, Ingmar (1. Prüfer); Quay, Rüdiger (2. Prüfer)
Master Thesis
2018First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Lozar, Roger; Massler, Hermann; Wagner, Sandrine; Quay, Rüdiger
Konferenzbeitrag
2018Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger
Konferenzbeitrag
2018High-power asymmetrical three-way GaN doherty power amplifier at C-band frequencies
Derguti, Edon; Ture, Erdin; Krause, Sebastian; Schwantuschke, Dirk; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter
Zeitschriftenaufsatz
2018Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2018Investigation of high-efficiency hybrid power combining for ka-band frequencies
Neininger, Philipp; Meder, Dirk; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Konferenzbeitrag
2018Investigation of processing modules to establish a mm-wave foundry process for space applications
Brueckner, Peter; Dammann, Michael; Quay, Rüdiger
Konferenzbeitrag
2018Investigations of active antenna doherty power amplifier modules under beam-steering mismatch
Gashi, Bersant; Krause, Sebastian; Quay, Rüdiger; Fager, Christian; Ambacher, Oliver
Zeitschriftenaufsatz
2018Low-frequency dispersion and state dependency in modern microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael
Konferenzbeitrag
2018mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
Schwantuschke, Dirk; Godejohann, Birte-Julia; Brueckner, Peter; Tessmann, Axel; Quay, Rüdiger
Konferenzbeitrag
2018Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger
Konferenzbeitrag
2018Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018A novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018PCB-embedding for GaN-on-Si power devices and ICs
Reiner, Richard; Weiss, Beatrix; Meder, Dirk; Waltereit, Patrick; Vockenberger, C.; Gerrer, Thomas; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Performance evaluation of commercial GaN RF HEMTs as hybrid topology power switches
Pereira, Aaron; Al-Sarawi, Said; Weste, N.; Abbott, D.; Carrubba, Vincenzo; Quay, Rüdiger
Konferenzbeitrag
2018RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Tessmann, Axel; Ohlrogge, Matthias; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Riemann-pump based RF-power DACs in GaN technology for 5G base stations
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018State dependency, low-frequency dispersion, and thermal effects in microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2018Suppression of iron memory effect in GaN epitaxial layers
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Müller, Stefan; Quay, Rüdiger; Stadelmann, Tim
Zeitschriftenaufsatz
2018Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Ambacher, Oliver; Quay, Rüdiger
Zeitschriftenaufsatz, Konferenzbeitrag
2018Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
Feuerschütz, Philip; Friesicke, Christian; Lozar, Roger; Wagner, Sandrine; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne F.
Konferenzbeitrag
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Zeitschriftenaufsatz
2017Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Design and characterization of highly-efficient GaN-HEMTs for power applications
Reiner, Richard
: Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent); Quay, Rüdiger (Betreuer)
Dissertation
2017Design, realization, and evaluation of a Riemann pump in GaN technology
Weiß, Markus; Friesicke, Christian; Metzger, Thomas; Schmidhammer, Edgar; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2017Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Konferenzbeitrag
2017Enhancement of the broadband efficiency of a class-j power amplifier with varactor-based dynamic load modulation
Amirpour, Raul; Darraji, Ramzi; Ghannouchi, Fadhel; Quay, Rüdiger
Zeitschriftenaufsatz
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick
Konferenzbeitrag
2017Investigation of a VDHL implementation of the data preprocessing for a FMCW MIMO mm-wave camera
Goodchild, Chandran
: Reindl, Leonhard (Betreuer); Quay, Rüdiger (Betreuer)
Bachelor Thesis
2017Investigation of GaN-HEMTs in reverse conduction
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Investigations of efficient active antenna power amplifier modules for 5G applications under beam control mismatch
Gashi, Bersant
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent); Krause, Sebastian (Betreuer)
Master Thesis
2017Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017New concept to control the gain of GaN-cascodes in broadband power amplifiers
Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang
Konferenzbeitrag
2017Noise degradation of cascodes in broadband power amplifiers
Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang
Konferenzbeitrag
2017Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick
Konferenzbeitrag
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Zeitschriftenaufsatz
2017A sequential power amplifier at 3.5 GHz for 5G applications
Neininger, Philipp; Friesicke, Christian; Krause, Sebastian; Meder, Dirk; Lozar, Roger; Merkle, Thomas; Quay, Rüdiger; Zwick, Thomas
Konferenzbeitrag
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Konferenzbeitrag
2017Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Nebel, Christoph E.; Quay, Rüdiger
Konferenzbeitrag
2017Untersuchung kompakter und effizienter Leistungsverstärker-Module für 5G-MIMO-Antennen-Anwendungen bei 3,5 GHz
Neininger, Philipp
: Zwick, Thomas (Betreuer); Quay, Rüdiger (Betreuer); Friesicke, Christian (Betreuer)
Master Thesis
2016Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O.
Konferenzbeitrag
2016Security Research Conference. 11th Future Security
: Ambacher, Oliver (Ed.); Wagner, Joachim (Ed.); Quay, Rüdiger (Ed.)
Tagungsband
2015Feldeffekttransistor und Verfahren zu seiner Herstellung
Quay, Rüdiger; Köhler, Klaus
Patent
2012A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
Zeitschriftenaufsatz
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Zeitschriftenaufsatz
2010Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, Wilfried; Kiefer, R.; Maroldt, S.; Müller, Stefan; Quay, Rüdiger; Mikulla, Michael; Ambacher, O.
Konferenzbeitrag
2009Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.
Konferenzbeitrag