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| 2020 | A 600 V p-GaN gate HEMT with intrinsic freewheeling schottky-diode in a GaN power IC with bootstrapped driver and sensors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2020 | A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2020 | Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2020 | First demonstration of G-band broadband GaN power amplifier MMICs operating beyond 200 GHz
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Krause, Sebastian; Friesicke, Christian; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2020 | A GaN-based currrent sense amplifier for GaN HEMTs with integrated current shunts
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2020 | Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage
Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2020 | Metal-organic chemical vapor deposition of aluminum scandium nitride
Leone, Stefano; Ligl, Jana; Manz, Christian; Kirste, Lutz; Fuchs, Theo; Menner, Hanspeter; Prescher, Mario; Wiegert, Joachim; Zukauskaite, Agne; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2020 | Monolithic integrated AlGaN/GaN power converter topologies on high-voltage AlN/GaN superlattice buffer
Mönch, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2020 | Monolithic integration of inductive components in a GaN-on-Si technology
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2020 | A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2020 | Optimization of metal-organic chemical vapor deposition regrown n-GaN
Leone, Stefano; Brueckner, Peter; Kirste, Lutz; Doering, Philipp; Fuchs, Theo; Müller, Stefan; Prescher, Mario; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2020 | A phase shifter with integrated PA MMIC for Ka-Band frequencies
Neininger, Philipp; Amirpour, Raul; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas | Konferenzbeitrag |
| 2020 | Reliability characteristics of vertical pin diodes on Si and GaN substrates for high-power applications
Gupta, Rohit
: Ambacher, Oliver (Erstprüfer); Quay, Rüdiger (Zweitprüfer); Driad, Rachid (Supervisor) | Master Thesis |
| 2020 | Si-substrate removal for AlGaN/GaN devices on PCB carriers
Reiner, Richard; Gerrer, Thomas; Weiss, Beatrix; Waltereit, Patrick; Mönch, Stefan; Meder, Dirk; Sinnwell, Matthias; Dammann, Michael; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2020 | Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band
Samis, Stanislav; Friesicke, Christian; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne | Konferenzbeitrag |
| 2019 | 190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | 3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond
Gerrer, Thomas; Czap, Heiko; Maier, Thomas; Benkhelifa, Fouad; Müller, Stefan; Nebel, Christoph E.; Waltereit, Patrick; Quay, Rüdiger; Cimalla, Volker | Zeitschriftenaufsatz |
| 2019 | Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers
Gerrer, Thomas; Graff, Andreas; Simon-Najasek, Michél; Czap, Heiko; Maier, Thomas; Benkhelifa, Fouad; Müller, Stefan; Nebel, Christoph E.; Waltereit, Patrick; Quay, Rüdiger; Cimalla, Volker | Zeitschriftenaufsatz |
| 2019 | AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Meder, Dirk; Basler, Michael; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2019 | Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh | Konferenzbeitrag |
| 2019 | D-band and G-band high-performance GaN power amplifier MMICs
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Massler, Hermann; Lozar, Roger; Wagner, Sandrine; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2019 | Deep submicron III-N HEMTs - technological development and reliability
Quay, Rüdiger; Dammann, Michael; Kemmer, Tobias; Brueckner, Peter; Ćwikliński, Maciej; Schwantuschke, Dirk; Krause, Sebastian; Leone, Stefano; Mikulla, Michael | Konferenzbeitrag |
| 2019 | Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
Neininger, Philipp; John, Laurenz; Brueckner, Peter; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas | Konferenzbeitrag |
| 2019 | Diamond Schottky-Diode in a non-isolated buck converter
Reiner, Richard; Zürbig, Verena; Pinti, Lucas; Reinke, Philipp; Meder, Dirk; Mönch, Stefan; Benkhelifa, Fouad; Quay, Rüdiger; Cimalla, Volker; Nebel, Christoph E.; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2019 | A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | High-power-density AlGaN/GaN technology for 100-V operation at L-band frequencies
Krause, Sebastian; Brueckner, Peter; Dammann, Michael; Quay, Rüdiger | Konferenzbeitrag |
| 2019 | High-Q anti-series AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | Integrated 2-b riemann pump RF-DAC in GaN technology for 5G base stations
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2019 | Investigation of the use of MOSHEMT based amplifiers in direct receivers for radiometry applications
Bansal, Nikesh
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent) | Master Thesis |
| 2019 | Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2019 | MBE of III-Nitride Semiconductors for Electronic Devices
Aidam, Rolf; Ambacher, Oliver; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Lim, T.; Quay, Rüdiger; Waltereit, Patrick | Aufsatz in Buch |
| 2019 | Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | A pseudo-complementary GaN-based gate driver with Reduced Static Losses
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | A 5 W AlGaN/GaN power amplifier MMIC for 25-27 GHz downlink applications
Samis, Stanislav; Friesicke, Christian; Feuerschüz, Philip; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, A.F. | Konferenzbeitrag |
| 2018 | A beyond 110 GHz GaN cascode low-noise amplifier with 20.3 dBm output power
Weber, Rainer; Ćwikliński, Maciej; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Brueckner, Peter; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
Schwantuschke, Dirk; Brueckner, Peter; Amirpour, Raul; Tessmann, Axel; Kuri, Michael; Rießle, Markus; Massler, Hermann; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger | Zeitschriftenaufsatz |
| 2018 | Dynamic load modulated low-voltage GaN PA using novel low-loss GaN varactors
Amirpour, Raul; Krause, Sebastian; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | Entwurf und Charakterisierung monolithischintegrierter Logikschaltungen basierend auf einer lateralen 600 V GaN-on-Si Technologie
Basler, Michael
: Kallfass, Ingmar (1. Prüfer); Quay, Rüdiger (2. Prüfer) | Master Thesis |
| 2018 | First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Lozar, Roger; Massler, Hermann; Wagner, Sandrine; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2018 | High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | High-power asymmetrical three-way GaN doherty power amplifier at C-band frequencies
Derguti, Edon; Ture, Erdin; Krause, Sebastian; Schwantuschke, Dirk; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter | Zeitschriftenaufsatz |
| 2018 | Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2018 | Investigation of high-efficiency hybrid power combining for ka-band frequencies
Neininger, Philipp; Meder, Dirk; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas | Konferenzbeitrag |
| 2018 | Investigation of processing modules to establish a mm-wave foundry process for space applications
Brueckner, Peter; Dammann, Michael; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | Investigations of active antenna doherty power amplifier modules under beam-steering mismatch
Gashi, Bersant; Krause, Sebastian; Quay, Rüdiger; Fager, Christian; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2018 | Low-frequency dispersion and state dependency in modern microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael | Konferenzbeitrag |
| 2018 | mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
Schwantuschke, Dirk; Godejohann, Birte-Julia; Brueckner, Peter; Tessmann, Axel; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2018 | Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | A novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | PCB-embedding for GaN-on-Si power devices and ICs
Reiner, Richard; Weiss, Beatrix; Meder, Dirk; Waltereit, Patrick; Vockenberger, C.; Gerrer, Thomas; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | Performance evaluation of commercial GaN RF HEMTs as hybrid topology power switches
Pereira, Aaron; Al-Sarawi, Said; Weste, N.; Abbott, D.; Carrubba, Vincenzo; Quay, Rüdiger | Konferenzbeitrag |
| 2018 | RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Tessmann, Axel; Ohlrogge, Matthias; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | Riemann-pump based RF-power DACs in GaN technology for 5G base stations
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | State dependency, low-frequency dispersion, and thermal effects in microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | Suppression of iron memory effect in GaN epitaxial layers
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Müller, Stefan; Quay, Rüdiger; Stadelmann, Tim | Zeitschriftenaufsatz |
| 2018 | Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Ambacher, Oliver; Quay, Rüdiger | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2018 | Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
Feuerschütz, Philip; Friesicke, Christian; Lozar, Roger; Wagner, Sandrine; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne F. | Konferenzbeitrag |
| 2018 | Voltage- and temperature-dependent degradation of AIN/GaN high electron mobility transistors
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | X-band GaN high power amplifier with integrated power switch for airborne applications
Pereira, Aaron; Al-Sarawi, Said; Weste, N.; Abbott, D.; Kühn, Jutta; Carrubba, Vincenzo; Quay, Rüdiger | Konferenzbeitrag |
| 2017 | AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O. | Zeitschriftenaufsatz |
| 2017 | Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Design and characterization of highly-efficient GaN-HEMTs for power applications
Reiner, Richard
: Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent); Quay, Rüdiger (Betreuer) | Dissertation |
| 2017 | Design, realization, and evaluation of a Riemann pump in GaN technology
Weiß, Markus; Friesicke, Christian; Metzger, Thomas; Schmidhammer, Edgar; Quay, Rüdiger; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2017 | Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar | Konferenzbeitrag |
| 2017 | Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger | Konferenzbeitrag |
| 2017 | Enhancement of the broadband efficiency of a class-j power amplifier with varactor-based dynamic load modulation
Amirpour, Raul; Darraji, Ramzi; Ghannouchi, Fadhel; Quay, Rüdiger | Zeitschriftenaufsatz |
| 2017 | First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick | Konferenzbeitrag |
| 2017 | Investigation of a VDHL implementation of the data preprocessing for a FMCW MIMO mm-wave camera
Goodchild, Chandran
: Reindl, Leonhard (Betreuer); Quay, Rüdiger (Betreuer) | Bachelor Thesis |
| 2017 | Investigation of GaN-HEMTs in reverse conduction
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Investigations of efficient active antenna power amplifier modules for 5G applications under beam control mismatch
Gashi, Bersant
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent); Krause, Sebastian (Betreuer) | Master Thesis |
| 2017 | Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | New concept to control the gain of GaN-cascodes in broadband power amplifiers
Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang | Konferenzbeitrag |
| 2017 | Noise degradation of cascodes in broadband power amplifiers
Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang | Konferenzbeitrag |
| 2017 | Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick | Konferenzbeitrag |
| 2017 | Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M. | Zeitschriftenaufsatz |
| 2017 | A sequential power amplifier at 3.5 GHz for 5G applications
Neininger, Philipp; Friesicke, Christian; Krause, Sebastian; Meder, Dirk; Lozar, Roger; Merkle, Thomas; Quay, Rüdiger; Zwick, Thomas | Konferenzbeitrag |
| 2017 | Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan | Konferenzbeitrag |
| 2017 | Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Nebel, Christoph E.; Quay, Rüdiger | Konferenzbeitrag |
| 2017 | Untersuchung kompakter und effizienter Leistungsverstärker-Module für 5G-MIMO-Antennen-Anwendungen bei 3,5 GHz
Neininger, Philipp
: Zwick, Thomas (Betreuer); Quay, Rüdiger (Betreuer); Friesicke, Christian (Betreuer) | Master Thesis |
| 2016 | Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O. | Konferenzbeitrag |
| 2016 | Security Research Conference. 11th Future Security
: Ambacher, Oliver (Ed.); Wagner, Joachim (Ed.); Quay, Rüdiger (Ed.) | Tagungsband |
| 2015 | Feldeffekttransistor und Verfahren zu seiner Herstellung
Quay, Rüdiger; Köhler, Klaus | Patent |
| 2012 | A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger | Zeitschriftenaufsatz |
| 2010 | Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O. | Zeitschriftenaufsatz |
| 2010 | Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, Wilfried; Kiefer, R.; Maroldt, S.; Müller, Stefan; Quay, Rüdiger; Mikulla, Michael; Ambacher, O. | Konferenzbeitrag |
| 2009 | Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K. | Konferenzbeitrag |