Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
Frei, Kathrin; Trejo-Hernández, Raúl; Schütt, Sebastian; Kirste, Lutz; Prescher, Mario; Aidam, Rolf; Müller, Stefan; Waltereit, Patrick; Ambacher, Oliver; Fiederle, Michael
Zeitschriftenaufsatz, Konferenzbeitrag
2019Optical constants and band gap of wurtzite Al₁₋ₓScₓN/Al₂O₃ prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41
Baeumler, Martina; Lu, Yuan; Kurz, Nicolas; Kirste, Lutz; Prescher, Mario; Christoph, Tim; Wagner, Joachim; Zukauskaite, Agne; Ambacher, Oliver
Zeitschriftenaufsatz
2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1-xScxN (up to x = 0.41) thin films
Lu, Yuan; Reusch, Markus; Kurz, Nicolas; Ding, Anli; Christoph, Tim; Prescher, Mario; Kirste, Lutz; Ambacher, Oliver; Zukauskaite, Agne
Zeitschriftenaufsatz
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Zeitschriftenaufsatz
2014Densification of thin aluminum oxide films by thermal treatments
Cimalla, V.; Baeumler, M.; Kirste, L.; Prescher, M.; Christian, B.; Passow, T.; Benkhelifa, F.; Bernhardt, F.; Eichapfel, G.; Himmerlich, M.; Krischok, S.; Pezoldt, J.
Zeitschriftenaufsatz
2013Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65%
Waltereit, P.; Müller, S.; Kirste, L.; Prescher, M.; Storm, S.; Weber, A.; Schauwecker, B.; Hosch, M.; Splettstößer, J.
Konferenzbeitrag