Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Adsorption and desorption of hydrogen at nonpolar GaN(1¯100) surfaces: Kinetics and impact on surface vibrational and electronic properties
Lymperakis, Liverios; Neugebauer, Jörg; Himmerlich, Marcel; Krischok, Stefan; Rink, Michael; Kröger, Jörg; Polyakov, Vladimir
Zeitschriftenaufsatz
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Zeitschriftenaufsatz
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Zeitschriftenaufsatz
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Konferenzbeitrag
2016Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions
Schreyvogel, C.; Polyakov, V.; Burk, S.; Fedder, H.; Denisenko, A.; Fávaro de Oliveira, F.; Wunderlich, R.; Meijer, J.; Zürbig, V.; Wrachtrup, J.; Nebel, C.E.
Zeitschriftenaufsatz
2016Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces
Berthold, T.; Rombach, J.; Stauden, T.; Polyakov, V.; Cimalla, V.; Krischok, S.; Bierwagen, O.; Himmerlich, M.
Zeitschriftenaufsatz
2016Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
Wespel, M.; Polyakov, V.M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2015Active charge state control of single NV centres in diamond by in-plane Al-Schottky junctions
Schreyvogel, C.; Polyakov, V.; Wunderlich, R.; Meijer, J.; Nebel, C.E.
Zeitschriftenaufsatz
2015Bias-free lateral terahertz emitters - a simulation study
Granzner, R.; Polyakov, V.M.; Cimalla, V.; Ambacher, O.; Schwierz, F.
Zeitschriftenaufsatz
2015High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2015Large area InN terahertz emitters based on the lateral photo-Dember effect
Wallauer, J.; Grumber, C.; Polyakov, V.; Iannucci, R.; Cimalla, V.; Ambacher, O.; Walther, M.
Zeitschriftenaufsatz
2015Normally-off AlGaN/GaN/AlGaN double heterostructure FETs with a thick undoped GaN gate layer
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Ambacher, O.
Zeitschriftenaufsatz
2015Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Konferenzbeitrag
2014Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Zeitschriftenaufsatz
2014Empirical model for the effective electron mobility in silicon nanowires
Granzner, R.; Polyakov, V.M.; Schippel, C.; Schwierz, F.
Zeitschriftenaufsatz
2014Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Konferenzbeitrag
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2014Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2013Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations
Heidrich, N.; Knöbber, F.; Polyakov, V.M.; Cimalla, V.; Pletschen, W.; Sah, R.E.; Kirste, L.; Leopold, S.; Hampl, S.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz
2012The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
Al Mustafa, N.; Granzner, R.; Polyakov, Vladimir M.; Racko, J.; Mikolasek, M.; Breza, J.; Schwierz, F.
Zeitschriftenaufsatz
2012Electrostatically coupled vibration modes in unimorph complementary mircocantilevers
Lebedev, V.; Heidrich, N.; Knöbber, F.; Sah, R.E.; Pletschen, W.; Raynor, B.; Polyakov, V.M.; Cimalla, V.; Ambacher, O.
Zeitschriftenaufsatz
2012Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2012Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures
Linkohr, S.; Pletschen, W.; Polyakov, V. M.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Kirste, L.; Müller, S.; Ambacher, O.; Cimalla, V.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs
Linkohr, S.; Pletschen, W.; Kirste, L.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Polyakov, V.M.; Müller, S.; Ambacher, O.; Cimalla, V.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F.; Polyakov, V.M.; Baeumler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Cäsar, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Zeitschriftenaufsatz
2011AlGaN/GaN sensors for direct monitoring of nerve cell response to inhibitors
Cimalla, I.; Gebinoga, M.; Schober, A.; Polyakov, V.M.; Lebedev, V.; Cimalla, V.
Aufsatz in Buch
2011Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
Köhler, K.; Müller, S.; Waltereit, P.; Pletschen, W.; Polyakov, V.M.; Lim, T.; Kirste, L.; Menner, H.; Brueckner, P.; Ambacher, O.; Buchheim, C.; Goldhahn, R.
Zeitschriftenaufsatz
2011Electron and hole accumulation in InN/InGaN heterostructures
Lebedev, V.; Polyakov, V.M.; Knübel, A.; Aidam, R.; Kirste, L.; Cimalla, V.; Granzner, R.; Schwierz, F.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2010Impact of Al content on transport properties of two-dimensional electron gas in GaN/Al(x)Ga(1-x)N/GaN heterostructures
Polyakov, V.M.; Cimalla, V.; Lebedev, V.; Köhler, K.; Müller, S.; Waltereit, P.; Ambacher, O.
Zeitschriftenaufsatz
2010Impact of n-type doping on the terahertz surface emission from c-plane InN
Polyakov, V.M.; Cimalla, V.; Lebedev, V.; Schwierz, F.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T.
Zeitschriftenaufsatz
2010Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling
Knübel, A.; Polyakov, V.M.; Kirste, L.; Aidam, R.
Zeitschriftenaufsatz
2010A novel functionalization of AlGaN/GaN-pH-ISFETs for DNA-sensors
Linkohr, S.; Schwarz, S.U.; Krischok, S.; Lorenz, P.; Nakamura, T.; Polyakov, V.M.; Cimalla, V.; Nebel, C.E.; Ambacher, O.
Konferenzbeitrag
2010Transport properties of InN
Cimalla, V.; Lebedev, V.; Ambacher, O.; Polyakov, V.M.; Schwierz, F.; Niebelschütz, F.; Ecke, G.; Myers, T.H.; Schaff, W.J.
Aufsatz in Buch
2010Vertical Design of InN Field Effect Transistors
Granzner, R.; Kittler, M.; Schwierz, F.; Polyakov, V.M.
Konferenzbeitrag
2008Electronic and photoconductive properties of ultrathin InGaN photodetectors
Lebedev, V.; Polyakov, V.M.; Hauguth-Frank, S.; Cimalla, V.; Wang, C.-Y.; Ecke, G.; Schwierz, F.; Schober, A.; Lozano, J.G.; Morales, F.M.; Gonzales, D.; Ambacher, O.
Zeitschriftenaufsatz
1998Comparison of field electron emission from DLC films produced by four different deposition techniques
Karabutov, A.V.; Konov, V.I.; Ralchenko, V.G.; Obraztsova, E.D.; Frolov, V.D.; Uglov, S.A.; Scheibe, H.J.; Strelnitskij, V.E.; Polyakov, V.I.
Zeitschriftenaufsatz
1998Field electron emission from diamond-like carbon films
Karabutov, A.V.; Konov, V.I.; Ralchenko, V.G.; Obraztsova, E.D.; Frolov, V.D.; Uglov, S.A.; Nunuparov, M.S.; Scheibe, H.J.; Strelnitskij, V.E.; Polyakov, V.I.; Rossukanyi, N.M.
Konferenzbeitrag
1997Field electron emission from diamond-like carbon films
Karabutov, A.V.; Konov, V.I.; Ralchenko, V.G.; Obraztsova, E.D.; Frolov, V.D.; Uglov, S.A.; Nunuparov, M.S.; Scheibe, H.J.; Strelnitskij, V.E.; Polyakov, V.I.; Rossukanyi, N.M.
Zeitschriftenaufsatz