Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
Ali, T.; Polakowski, P.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Eng, L.M.; Seidel, K.
Konferenzbeitrag
2019Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
Ali, T.; Polakowski, P.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Eng, L.M.; Seidel, K.
Poster
201814nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications
Krivokapic, Z.; Rana, U.; Galatage, R.; Razavieh, A.; Aziz, A.; Liu, J.; Shi, J.; Kim, H.J.; Sporer, R.; Serrao, C.; Busquet, A.; Polakowski, P.; Müller, J.; Kleemeier, W.; Jacob, A.; Brown, D.; Knorr, A.; Carter, R.; Banna, S.
Konferenzbeitrag
2018A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Müller, B.; Melde, T.; Mulaosmanovic, H.; Slesazeck, S.; Müller, S.; Ocker, J.; Noack, M.; Löhr, D.-A.; Polakowski, P.; Müller, J.; Mikolajick, T.; Höntschel, J.; Rice, B.; Pellerin, J.; Beyer, S.
Konferenzbeitrag
2018High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Calvo, J.; Zimmermann, K.; Müller, J.
Zeitschriftenaufsatz
2018Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET
Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Thrun, X.; Hanisch, N.; Steinke, P.; Calvo, J.; Müller, J.
Zeitschriftenaufsatz
2018Tuning parameters and their impact on ferroelectric hafnium oxide
Polakowski, Patrick; Büttner, Teresa; Ali, Tarek Nadi Ismail; Riedel, Stefan; Kämpfe, Thomas; Seidel, Konrad; Müller, Johannes; Pätzold, Björn
Vortrag
2017Ferroelectric HfO2 thin film testing and whole wafer mapping with non-contact corona-Kelvin metrology
Marinskiy, D.; Polakowski, P.; Edelman, P.; Wilson, M.; Lagowski, J.; Metzger, J.; Binder, R.; Müller, J.
Zeitschriftenaufsatz
2017Gewitter im Chip - Resistive Speicher für low-power Anwendungen
Seidel, Konrad; Riedel, Stefan; Kalishettyhalli Ma, Mamathamba; Polakowski, Patrick; Müller, Johannes
Konferenzbeitrag
2017Novel ferroelectric FET based synapse for neuromorphic systems
Mulaosmanovic, H.; Ocker, J.; Müller, S.; Noack, M.; Müller, J.; Polakowski, P.; Mikolajick, T.; Slesazeck, S.
Konferenzbeitrag
2017Properties of ALD ferroelectric Si-doped HfO2 characterized with noncontact Corona-Kelvin metrology
Polakowski, Patrick; Müller, Johannes; Marinskiy, Dmitriy; Findlay, Andrew; Edelman, Piotr; Wilson, Marshall; Lagowski, Jacek; Metzger, Joachim; Binder, Robert
Vortrag
2017Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; Bentum, Ralf van; Mikolajick, Thomas; Slesazeck, Stefan
Zeitschriftenaufsatz
2016A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Trentzsch, M.; Flachowsky, S.; Richter, R.; Paul, J.; Reimer, B.; Utess, D.; Jansen, S.; Mulaosmanovic, H.; Müller, S.; Slesazeck, S.; Ocker, J.; Noack, M.; Müller, J.; Polakowski, P.; Schreiter, J.; Beyer, S.; Mikolajick, T.; Rice, B.
Konferenzbeitrag
2016Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28nm FeFET memory arrays
Mueller, S.; Slesazeck, S.; Henker, S.; Flachowsky, S.; Polakowski, P.; Paul, J.; Smith, E.; Müller, J.; Mikolajick, T.
Zeitschriftenaufsatz, Konferenzbeitrag
2016High endurance strategies for hafnium oxide based ferroelectric field effect transistor
Müller, J.; Polakowski, P.; Müller, S.; Mulaosmanovic, H.; Ocker, J.; Mikolajick, T.; Slesazeck, S.; Flachowsky, S.; Trentzsch, T.
Konferenzbeitrag
2016Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T.
Konferenzbeitrag
2016La-doped ZrO2 based Back End of Line (BEoL) decoupling capacitors
Weinreich, Wenke; Seidel, Konrad; Polakowski, Patrick; Drescher, Maximilian; Gummenscheimer, A.; Nolan, M.G.; Cheng, L.; Triyoso, D.H.
Poster
2016La-doped ZrO2 based BEoL decoupling capacitors
Weinreich, W.; Seidel, K.; Polakowski, P.; Drescher, M.; Gummenscheimer, A.; Nolan, M.G.; Cheng, L.; Triyoso, D.H.
Konferenzbeitrag
2016A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide
Riedel, S.; Polakowski, P.; Müller, J.
Zeitschriftenaufsatz
2015Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects
Müller, J.; Polakowski, P.; Mueller, S.; Mikolajick, T.
Zeitschriftenaufsatz
2015Ferroelectricity in undoped hafnium oxide
Polakowski, P.; Müller, J.
Zeitschriftenaufsatz
2015Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)
Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine
Konferenzbeitrag
2015Next-generation ferroelectric memories based on FE-HfO2
Müller, S.; Slesazeck, S.; Mikolajick, T.; Müller, Johannes; Polakowski, Patrick; Flachowsky, S.
Konferenzbeitrag
2015Scaling and optimization of ferroelectric hafnium oxide for memory applications and beyond
Müller, Johannes; Riedel, Stefan; Polakowski, Patrick
Vortrag
2014ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM
Triyoso, D.H.; Weinreich, W.; Seidel, K.; Nolan, M.G.; Polakowski, P.; Utess, D.; Ohsiek, S.; Dittmar, K.; Weisheit, M.; Liebau, M.; Fox, R.
Konferenzbeitrag
2014ALD ZrO2 processes for BEoL device applications
Weinreich, Wenke; Seidel, Konrad; Polakowski, Patrick; Riedel, Stefan; Wilde, Lutz; Sundqvist, Jonas; Triyoso, Dina H.; Nolan, Mark G.
Konferenzbeitrag
2014Doped hafnium oxide - an enabler for ferroelectric field effect transistors
Mikolajick, T.; Müller, S.; Schenk, T.; Yurchuk, E.; Slesazeck, S.; Schröder, U.; Flachowsky, S.; Bentum, R. van; Kolodinski, S.; Polakowski, P.; Müller, J.
Konferenzbeitrag
2014Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications
Polakowski, Patrick; Riedel, Stefan; Weinreich, Wenke; Rudolf, M.; Sundqvist, Jonas; Seidel, Konrad; Müller, Johannes
Konferenzbeitrag
2014Ferroelectric hafnium oxide based materials and devices
Müller, Johannes; Polakowski, Patrick; Müller, Stefan; Mikolajick, Thomas
Konferenzbeitrag
2014Ferroelectric hafnium oxide: A game changer to FRAM?
Müller, J.; Polakowski, P.; Riedel, S.; Mueller, S.; Yurchuk, E.; Mikolajick, T.
Konferenzbeitrag
2014Impact of different dopants on the switching properties of ferroelectric hafniumoxide
Schroeder, U.; Yurchuk, E.; Müller, J.; Martin, D.; Schenk, T.; Polakowski, P.; Adelmann, C.; Popovici, M.I.; Kalinin, S.V.; Mikolajick, T.
Zeitschriftenaufsatz
2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Konferenzbeitrag
2013Reliability comparison of pure ZrO2 and Al- doped ZrO2 MIM capacitors
Seidel, K.; Weinreich, Wenke; Polakowski, P.; Triyoso, D.H.; Nolan, M.G.; Yiang, K.Y.; Chu, S.
Konferenzbeitrag
2013TEMAZ/O-3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal-insulator-metal capacitors
Weinreich, W.; Tauchnitz, T.; Polakowski, P.; Drescher, M.; Riedel, S.; Sundqvist, J.; Seidel, K.; Shirazi, M.; Elliott, S.D.; Ohsiek, S.; Erben, E.; Trui, B.
Zeitschriftenaufsatz
2012Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T.
Konferenzbeitrag