Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias
Konferenzbeitrag
2019Diffusion of phosphorus and boron from Atomic Layer Deposition oxides into silicon
Beljakova, Svetlana; Pichler, Peter; Kalkofen, Bodo; Hübner, René
Zeitschriftenaufsatz
2019On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics
Rattmann, Gudrun; Pichler, Peter; Erlbacher, Tobias
Zeitschriftenaufsatz
2019Simulationsgestützte Effizienzoptimierung von industriellen Kaltwassersystemen mit thermischen Speichern
Puls, Philipp
: Pichler, Peter; Müller, Karsten
Dissertation
2018Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations
Hauf, Moritz; Schmidt, Gerhard; Niedernostheide, Franz-Josef; Johnsson, Anna; Pichler, Peter
Konferenzbeitrag
20173D simulation of silicon-based single-electron transistors
Klüpfel, Fabian J.; Pichler, Peter
Konferenzbeitrag
2017Platinum diffusion for advanced silicon power devices
Badr, Elie
: Pichler, Peter; Wellmann, Peter
Dissertation
2017Silicon self-interstitial properties deduced from platinum profiles after annealing with controlled cooling
Johnsson, Anna; Pichler, Peter; Schmidt, Gerhard
Zeitschriftenaufsatz
2016Empirical cluster modeling revisited
Pichler, Peter
Konferenzbeitrag
2016Gettering and defect engineering in semiconductor technology XVI
: Pichler, Peter (Hrsg.)
Tagungsband
2016Modeling the post-implantation annealing of platinum
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Konferenzbeitrag
2016Simulating wafer bow for integrated capacitors using a multiscale approach
Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter
Konferenzbeitrag
2015Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktroyia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Zeitschriftenaufsatz
2015Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus
Wolf, F. Alexander; Martinez-Limia, Alberto; Grote, Daniela; Stichtenoth, Daniel; Pichler, Peter
Zeitschriftenaufsatz
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Zeitschriftenaufsatz
2015Role of defects in the dopant diffusion in Si
Pichler, Peter
Aufsatz in Buch
2015Simulation and modeling of silicon carbide devices
Uhnevionak, Viktroyia
: Pichler, Peter; Weigel, Robert
Dissertation
2015Thermo-mechanical ball bonding simulation with elasto-plastic parameters obtained from nanoindentation and atomic force measurements
Wright, Alan; Koffel, Stephane; Kraft, Silke; Pichler, Peter; Cambieri, Juri; Minixhofer, Rainer; Wachmann, Ewald
Konferenzbeitrag
2014Advanced extra functionality CMOS-based devices
Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W.
Zeitschriftenaufsatz, Konferenzbeitrag
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Zeitschriftenaufsatz
2014Deep energy levels of platinum-hydrogen complexes in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Konferenzbeitrag
2014Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs
Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter
Konferenzbeitrag
2014Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect
Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena
Konferenzbeitrag
2014Modeling platinum diffusion in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Zeitschriftenaufsatz
2014Modeling the annealing of dislocation loops in implanted c-Si solar cells
Wolf, F. Alexander; Martinez-Limia, Alberto; Stichtenoth, Daniel; Pichler, Peter
Zeitschriftenaufsatz
2014On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.
Zeitschriftenaufsatz, Konferenzbeitrag
2014Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species
Voronkov, Vladimir V.; Falster, Robert; Pichler, Peter
Zeitschriftenaufsatz
2014Simulation of the boron build-up formation during melting laser thermal annealing
Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.
Zeitschriftenaufsatz, Konferenzbeitrag
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2014Thermo-mechanical simulation of plastic deformation during temperature cycling of bond wires for power electronic modules
Wright, Alan; Hutzler, Aaron; Schletz, Andreas; Pichler, Peter
Konferenzbeitrag
2013Anomalous impurity segregation and local bonding fluctuation in l-Si
Fisicaro, G.; Huet, K.; Negru, R.; Hackenberg, M.; Pichler, P.; Taleb, N.; La Magna, A.
Zeitschriftenaufsatz
2013Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter
Konferenzbeitrag
2013A comprehensive model for the diffusion of boron in silicon in presence of fluorine
Wolf, F. Alexander; Martinez-Limia, Alberto; Pichler, Peter
Zeitschriftenaufsatz
2013Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach
Fisicaro, G.; Pelaz, L.; Aboy, M.; Lopez, P.; Italia, M.; Huet, K.; Cristiano, F.; Essa, Z.; Yang, Q.; Bedel-Pereira, E.; Hackenberg, M.; Pichler, P.; Quillec, M.; Taleb, N.; La Magna, A.
Konferenzbeitrag
2013Extended model for platinum diffusion in silicon
Badr, E.; Pichler, P.; Schmidt, G.
Konferenzbeitrag
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2013Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts
Hackenberg, M.; Pichler, P.; Baudot, S.; Essa, Z.; Gro-Jean, M.; Tavernier, C.; Schamm-Chardon, S.
Zeitschriftenaufsatz, Konferenzbeitrag
2013Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
Hackenberg, Moritz; Rommel, Mathias; Rumler, M; Lorenz, Jürgen; Pichler, Peter; Huet, Karim; Negru, Razvan; Fisicaro, Giuseppe; Magna, Antonino la; Taleb, Nadjib; Quillec, M.
Konferenzbeitrag
2013On the calculation of hall factors for the characterization of electronic devices
Uhnevionak, V.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
2013On the strain induced by arsenic into silicon
Koffel, Stéphane; Pichler, Peter; Lorenz, Jürgen; Bisognin, Gabriele; Napolitani, Enrico; Salvador, Davide de
Konferenzbeitrag
2013On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs
Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.
Konferenzbeitrag
2013On the thermo-mechanical modelling of a ball bonding process with ultrasonic softening
Wright, A.; Koffel, S.; Pichler, P.; Enichlmair, H.; Minixhofer, R.; Wachmann, E.
Konferenzbeitrag
2013Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Konferenzbeitrag
2012Enthalpy based modeling of pulsed excimer laser annealing for process simulation
Hackenberg, M.; Pichler, P.; Huet, K.; Negru, R.; Venturini, J.; Pakfar, A.; Tavernier, C.; La Magna, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2012Modeling boron profiles in silicon after pulsed excimer laser annealing
Hackenberg, M.; Huet, K.; Negru, R.; Venturini, J.; Fisicaro, G.; La Magna, A.; Pichler, P.
Konferenzbeitrag
2012Precipitation of antimony implanted into silicon
Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation
Burenkov, Alexander; Pichler, Peter; Fröba, Andreas; Rausch, Michael Heinrich; Leipertz, Alfred
Patent
2012Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Vortrag
2011Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium
Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Germanium substrate loss during thermal processing
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz, Konferenzbeitrag
2011On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Simulation of plasma immersion ion implantation
Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.
Konferenzbeitrag
2010Characterization of arsenic segregation at Si/SiO2 interface by 3D atom probe tomography
Ngamo, M.; Duguay, S.; Pichler, P.; Daoud, K.; Pareige, P.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Future challenges in CMOS process modelling
Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag