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| 2017 | Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2016 | Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier
Mußer, M.
: Ambacher, O. (Referent); Manoli, Y. (Betreuer) | Dissertation |
| 2015 | A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Examples of High-speed Harmonic Load Pull Investigations of High-Efficiency GaN Power Transistors
Marchetti, M.; Maier, T.; Carrubba, V.; Maroldt, S.; Mußer, M.; Quay, R. | Konferenzbeitrag |
| 2015 | High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O. | Zeitschriftenaufsatz |
| 2015 | Micro-system: Gallium nitride RF-broad-band high-power amplifier
Mußer, M.
: Ambacher, O. (Referent); Manoli, Y. (Betreuer) | Dissertation |
| 2014 | Analysis and performance of drain bias "in-dependent" class-J power amplifier
Carrubba, V.; Ture, E.; Quay, R.; Raay, F. van; Musser, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Raay, F. van; Quay, R.; Ambacher, O.; Wiegner, D.; Seyfried, U.; Bohn, T.; Pascht, A. | Zeitschriftenaufsatz |
| 2014 | Source/load pull investigation of AlGaN/GaN power transistors with ultra-high efficiency
Carrubba, V.; Quay, R.; Maroldt, S.; Musser, M.; Raay, F. van; Ambacher, O. | Konferenzbeitrag |
| 2013 | (In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies
Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O. | Zeitschriftenaufsatz |
| 2013 | GaN HEMTs and MMICs for space applications
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2013 | Individual source vias for GaN HEMT power bars
Musser, M.; Raay, F. van; Brueckner, P.; Bronner, W.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2013 | Recent developments in GaN HEMTs and MMICs for high power electronics
Waltereit, P.; Bronner, W.; Brueckner, P.; Dammann, M.; Reiner, R.; Müller, S.; Kühn, J.; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2012 | GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2012 | Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2012 | Is GaN the ideal material for space?
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2011 | Analysis of GaN HEMTs for broadband high-power amplifier design
Musser, M.; Quay, R.; Raay, F. van; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2011 | Design and realisation of a 50 W GaN class-E power amplifier
Sochor, P.-L.; Maroldt, S.; Musser, M.; Walcher, H.; Kalim, D.; Quay, R.; Negra, R. | Konferenzbeitrag |
| 2011 | From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2010 | Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O. | Zeitschriftenaufsatz |
| 2010 | GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
Sledzik, H.; Reber, R.; Bunz, B.; Schuh, P.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Quay, R. | Konferenzbeitrag |
| 2010 | GaN power FETs for next generation mobile communication systems
Musser, M.; Walcher, H.; Maier, T.; Quay, R.; Dammann, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2010 | GaN-based amplifiers for wideband applications
Schuh, P.; Sledzik, H.; Reber, R.; Widmer, K.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Kiefer, R. | Zeitschriftenaufsatz |
| 2009 | Development of AlGaN/GaN HEMTS with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Musser, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2009 | GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Zeitschriftenaufsatz |
| 2009 | L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2008 | Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T. | Konferenzbeitrag |