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| 2018 | Taking monocrystalline silicon to the ultimate lifetime limit
Niewelt, Tim; Richter, Armin; Kho, T.C.; Grant, N.E.; Bonilla, R.S.; Steinhauser, Bernd; Polzin, Jana-Isabelle; Feldmann, Frank; Hermle, Martin; Murphy, J.D.; Phang, S.P.; Kwapil, Wolfram; Schubert, Martin C. | Zeitschriftenaufsatz |
| 2017 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
Niewelt, T.; Selinger, M.; Grant, N.; Kwapil, W.M.; Murphy, J.D.; Schubert, M.C. | Zeitschriftenaufsatz |
| 2017 | Superacid-treated silicon surfaces: Extending the limit of carrier lifetime for photovoltaic applications
Grant, N.E.; Niewelt, T.; Wilson, N.R.; Wheeler-Jones, E.C.; Bullock, J.; Al-Amin, M.; Schubert, M.C.; Veen, A.C. van; Javey, A.; Murphy, J.D. | Zeitschriftenaufsatz |
| 2014 | Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime
Blum, A.L.; Swirhun, J.S.; Sinton, R.A.; Yan, F.; Herasimenka, S.; Roth, T.; Lauer, K.; Haunschild, J.; Lim, B.; Bothe, K.; Hameiri, Z.; Seipel, B.; Xiong, R.; Dhamrin, M.; Murphy, J.D. | Zeitschriftenaufsatz |
| 2013 | Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime
Blum, A.L.; Swirhun, J.S.; Sinton, R.A.; Yan, F.; Herasimenka, S.; Roth, T.; Lauer, K.; Haunschild, J.; Lim, B.; Bothe, K.; Hameiri, Z.; Seipel, B.; Xiong, R.; Dhamrin, M.; Murphy, J.D. | Konferenzbeitrag |