Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Konferenzbeitrag
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Zeitschriftenaufsatz
2016Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O.
Konferenzbeitrag
2012A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
Zeitschriftenaufsatz
2010Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, Wilfried; Kiefer, R.; Maroldt, S.; Müller, Stefan; Quay, Rüdiger; Mikulla, Michael; Ambacher, O.
Konferenzbeitrag
2009Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.
Konferenzbeitrag