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| 2017 | Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger | Konferenzbeitrag |
| 2017 | Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M. | Zeitschriftenaufsatz |
| 2016 | Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power
Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O. | Konferenzbeitrag |
| 2016 | Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Mikulla, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
Wespel, M.; Polyakov, V.M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2015 | Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T. | Zeitschriftenaufsatz |
| 2015 | High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power
Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2015 | High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Integrated reverse-diodes for GaN-HEMT structures
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Switching frequency modulation for GaN-based power converters
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Mikulla, M.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2015 | With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T. | Konferenzbeitrag |
| 2014 | Advanced GaN/(In)AlGaN MMICs for applications in space from K-band to W-band frequencies
Quay, R.; Schwantuschke, D.; Brueckner, P.; Chéron, J.; Dammann, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Müller, S.; Benkhelifa, F.; Mikulla, M.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O. | Zeitschriftenaufsatz |
| 2014 | Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2014 | Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Waltereit, P.; Reiner, R.; Wespel, M.; Weiss, B.; Czap, H.; Dammann, M.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Manga: Manufacturable GaN SiC substates and GaN Epi-Wafer supply chain
Mikulla, M.; Stockmeier, M.; Magnussen, B.; Poisson, M.-A.; Zanoni, E.; Kuball, M. | Konferenzbeitrag |
| 2014 | Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain
Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Zanoni, E.; Kuball, M. | Konferenzbeitrag |
| 2014 | A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage
Waltereit, P.; Leuther, A.; Rüster, J.; Czap, H.; Preschle, M.; Iannucci, R.; Müller, S.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Q- and E-band amplifier MMICs for satellite communication
Schwantuschke, D.; Aja, B.; Seelmann-Eggebert, M.; Quay, R.; Leuther, A.; Brueckner, P.; Schlechtweg, M.; Mikulla, M.; Kallfass, I.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2013 | A 67 GHz GaN voltage-controlled oscillator MMIC with high output power
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I. | Zeitschriftenaufsatz |
| 2013 | Benchmarking of large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2013 | Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition
Sah, R.E.; Tegenkamp, C.; Baeumler, M.; Bernhardt, F.; Driad, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2013 | Deep-level characterization in GaN HEMTs. Pt.I: Advantages and limitations of drain current transient measurements
Bisi, D.; Meneghini, M.; Santi, C. de; Chini, A.; Dammann, M.; Brueckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E. | Zeitschriftenaufsatz |
| 2013 | Effiziente Energiewandlung mit GaN-basierter Leistungselektronik
Waltereit, P.; Reiner, R.; Müller, S.; Czap, H.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2013 | A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs
Schwantuschke, D.; Seelmann-Eggebert, M.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I. | Konferenzbeitrag |
| 2013 | GaN HEMTs and MMICs for space applications
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2013 | GaN-based high voltage transistors for efficient power switching
Waltereit, P.; Reiner, R.; Czap, H.; Peschel, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2013 | High-gain millimeter-wave AlGaN/GaN transistors
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2013 | High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
Mikulla, M.; Leuther, A.; Brueckner, P.; Schwantuschke, D.; Tessmann, A.; Schlechtweg, M.; Ambacher, O.; Caris, M. | Konferenzbeitrag |
| 2013 | Individual source vias for GaN HEMT power bars
Musser, M.; Raay, F. van; Brueckner, P.; Bronner, W.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2013 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
Sah, R.E.; Driad, R.; Bernhardt, F.; Kirste, L.; Leancu, C.-C.; Czap, H.; Benkhelifa, F.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2013 | Recent developments in GaN HEMTs and MMICs for high power electronics
Waltereit, P.; Bronner, W.; Brueckner, P.; Dammann, M.; Reiner, R.; Müller, S.; Kühn, J.; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Advances on GaN mm-wave power amplifiers to 100 GHz
Quay, R.; Brueckner, P.; Heijningen, M. van; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2012 | GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2012 | Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation
Driad, R.; Schmidt, R.; Kirste, L.; Lösch, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2012 | High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours
Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J. | Konferenzbeitrag |
| 2012 | High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 105 hours
Waltereit, P.; Kuhn, J.; Quay, R.; Raay, F. van; Dammann, M.; Casar, M.; Muller, S.; Mikulla, M.; Ambacher, O.; Latti, J.; Rostewitz, M.; Hirche, K.; Daubler, J. | Konferenzbeitrag |
| 2012 | A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger | Zeitschriftenaufsatz |
| 2012 | Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2012 | Is GaN the ideal material for space?
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs
Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M. | Konferenzbeitrag |
| 2012 | Novel III-N devices: Progess on GaN-based DC-DC converters for space
Quay, R.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F.; Polyakov, V.M.; Baeumler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Cäsar, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O. | Zeitschriftenaufsatz |
| 2012 | Reverse bias stress test of GaN HEMTs for high-voltage switching applications
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2012 | A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I. | Konferenzbeitrag |
| 2012 | A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I. | Konferenzbeitrag |
| 2011 | A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brueckner, P.; Seelmann-Eggebert, M.; Mikulla, M.; Kallfass, I.; Quay, R. | Konferenzbeitrag |
| 2011 | Analysis of GaN HEMTs for broadband high-power amplifier design
Musser, M.; Quay, R.; Raay, F. van; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2011 | Atomic layer deposition of aluminum oxide for surface passivation of InGaAs/InP heterojunction bipolar transistors
Driad, R.; Benkhelifa, F.; Kirste, L.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2011 | Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2011 | Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2011 | Effect of chemical surface pre-treatment on reliability of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2011 | From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2011 | InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2011 | Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, W.; Kiefer, R.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2011 | Manga: Manufacturable GaN
Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Janzen, E.; Zanoni, E.; Kuball, M. | Konferenzbeitrag |
| 2011 | Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
Dammann, M.; Baeumler, M.; Gütle, F.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M. | Konferenzbeitrag |
| 2011 | Surface passivation of InGaAs/InP HBTs using atomic layer deposited Al(2)O(3)
Driad, R.; Benkhelifa, F.; Kirste, L.; Lösch, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2010 | AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2010 | AlGaN/GaN HEMTs for high voltage applications
Benkhelifa, F.; Krausse, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2010 | Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2010 | Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O. | Zeitschriftenaufsatz |
| 2010 | Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2010 | Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Zeitschriftenaufsatz |
| 2010 | Gallium nitride RF-devices. An overview on the development activities in Europe
Quay, R.; Mikulla, M. | Konferenzbeitrag |
| 2010 | GaN power FETs for next generation mobile communication systems
Musser, M.; Walcher, H.; Maier, T.; Quay, R.; Dammann, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2010 | High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2010 | Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, Wilfried; Kiefer, R.; Maroldt, S.; Müller, Stefan; Quay, Rüdiger; Mikulla, Michael; Ambacher, O. | Konferenzbeitrag |
| 2010 | Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R. | Zeitschriftenaufsatz |
| 2010 | Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T. | Zeitschriftenaufsatz |
| 2010 | Metamorphic HEMT technology for submillimeterwave MMIC applications
Leuther, A.; Tessmann, A.; Kallfass, I.; Massler, H.; Lösch, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2010 | Reliability status of GaN transistors and MMICs in Europe
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K. | Konferenzbeitrag |
| 2009 | Design of highly-efficient GaN x-band-power-amplifier MMICs
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Maier, T.; Stibal, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Konferenzbeitrag |
| 2009 | Design of X-band GaN MMICs using field plates
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Peschel, D.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Konferenzbeitrag |
| 2009 | Development of AlGaN/GaN HEMTS with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Musser, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2009 | Gallium nitride MMICs for future reconnaissance and imaging applications
Quay, R.; Mikulla, M.; Waltereit, P.; Raay, F. van; Dammann, M.; Kühn, J.; Ambacher, O.; Schuh, P. | Konferenzbeitrag |
| 2009 | GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Zeitschriftenaufsatz |
| 2009 | L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2009 | Metamorphic HEMT technology for low-noise applications
Leuther, A.; Tessmann, A.; Kallfass, I.; Lösch, R.; Seelmann-Eggebert, M.; Wadefalk, N.; Schäfer, F.; Gallego Puyol, J.D.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2009 | Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2009 | Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K. | Konferenzbeitrag |
| 2009 | X-band T/R-module front-end based on GaN MMICs
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M. | Zeitschriftenaufsatz |
| 2008 | 10 W high-efficiency high-brightness tapered diode lasers at 976 nm
Ostendorf, R.; Kaufel, G.; Moritz, R.; Mikulla, M.; Ambacher, O.; Kelemen, M.; Gilly, J. | Konferenzbeitrag |
| 2008 | 35 nm metamorphic HEMT MMIC technology
Leuther, A.; Tessmann, A.; Massler, H.; Lösch, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2008 | Balanced microstrip AlGaN/GaN HEMT power amplifier MMIC for X-band applications
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thumm, M. | Konferenzbeitrag |
| 2008 | Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T. | Konferenzbeitrag |
| 2008 | GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M. | Konferenzbeitrag |
| 2008 | High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2008 | High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Rijs, F. van; Rödle, T.; Riepe, K. | Konferenzbeitrag |
| 2008 | Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö. | Konferenzbeitrag |
| 2008 | A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al. | Konferenzbeitrag |
| 2007 | 50 nm MHEMT technology for G- and H-band MMICs
Leuther, A.; Tessmann, A.; Dammann, M.; Schwörer, C.; Schlechtweg, M.; Mikulla, M.; Lösch, R.; Weimann, G. | Konferenzbeitrag |
| 2007 | GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Konferenzbeitrag |
| 2007 | High-power high-brightness lasers
Kelemen, M.T.; Weber, J.; Kaufel, G.; Moritz, R.; Mikulla, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2007 | Recessed gate processing for GaN/AlGaN-HEMTs
Pletschen, W.; Kiefer, R.; Raynor, B.; Müller, S.; Benkhelifa, F.; Quay, R.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Konferenzbeitrag |
| 2006 | 14xx-nm high brightness tapered diode lasers grown by solid-source MBE
Kallenbach, S.; Aidam, R.; Lösch, R.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2006 | 8 W high-efficiency high-brightness tapered diode lasers at 976 nm
Kelemen, M.T.; Weber, J.; Kaufel, G.; Moritz, R.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2006 | Advanced high power amplifier chain for X-band T/R-modules based on GaN MMICs
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2006 | Advanced millimeter-wave ICs using metamorphic HEMT technology
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Schwörer, C.; Massler, H.; Mikulla, M.; Walther, M.; Lösch, R. | Zeitschriftenaufsatz |
| 2006 | Comparison between 50 W tapered laser arrays and tapered single emitters
Scholz, C.; Boucke, K.; Poprawe, R.; Kelemen, M.T.; Weber, J.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2006 | Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section
Pfahler, C.; Eichhorn, M.; Kelemen, M.T.; Kaufel, G.; Mikulla, M.; Schmitz, J.; Wagner, J. | Zeitschriftenaufsatz |
| 2006 | GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G. | Zeitschriftenaufsatz |
| 2006 | GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power
Pfahler, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Rattunde, M.; Schmitz, J.; Wagner, J. | Zeitschriftenaufsatz |
| 2006 | High-power 1.9-µm diode laser arrays with reduced far field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J. | Zeitschriftenaufsatz |
| 2006 | High-power diode laser arrays emitting at 2 µm with reduced far-field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.; Pfahler, C. | Konferenzbeitrag |
| 2006 | InP DHBT based IC technology for over 80 Gbit/s data communications
Driad, R.; Makon, R.E.; Schneider, K.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2006 | X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs
Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | 5 W high-efficiency high-brightness tapered diode lasers at 980 nm
Weber, J.; Kelemen, M.T.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | Advanced mm-wave ICs and applications
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Schwörer, C.; Massler, H.; Mikulla, M.; Walther, M.; Riessle, M. | Konferenzbeitrag |
| 2005 | An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power
Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Benkhelifa, F.; Raynor, B.; Pletschen, W.; Kuri, M.; Massler, H.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2005 | GaSb-based 1.9-2.4 µm quantum-well diode lasers with low-beam divergence
Rattunde, M.; Geerlings, E.; Schmitz, J.; Kaufel, G.; Weber, J.; Mikulla, M.; Wagner, J. | Konferenzbeitrag |
| 2005 | High-brightness GaSb-based tapered diode-lasers emitting at 1.9 µm
Pfahler, C.; Manz, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Wagner, J. | Konferenzbeitrag |
| 2005 | High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices
Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G. | Konferenzbeitrag |
| 2005 | High-power diode laser arrays at 2 µm for materials processing
Kelemen, M.T.; Weber, J.; Rattunde, M.; Pfahler, C.; Kaufel, G.; Moritz, R.; Manz, C.; Mikulla, M.; Wagner, J. | Konferenzbeitrag |
| 2005 | High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm
Kallenbach, S.; Kelemen, M.T.; Aidam, R.; Lösch, R.; Kaufel, G.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | High-power high-brightness tapered diode lasers and amplifiers
Kelemen, M.T.; Weber, J.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | InP DHBT-based IC technology for high-speed data communications
Driad, R.; Schneider, K.; Makon, R.E.; Lang, M.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M. | Konferenzbeitrag |
| 2005 | Metamorphic 50 nm InAs-Channel HEMT
Leuther, A.; Weber, R.; Dammann, M.; Schlechtweg, M.; Mikulla, M.; Walther, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Fehrenbach, W.; Bronner, W.; Kuri, M.; Benkhelifa, F.; Massler, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz
Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2005 | Reliability of 50 nm low-noise metamorphic HEMTs and LNAs
Dammann, M.; Leuther, A.; Tessmann, A.; Massler, H.; Mikulla, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2005 | Tapered diode lasers at 976nm with 8 W nearly diffraction limited output power
Kelemen, M.T.; Weber, J.; Kaufel, G.; Bihlmann, G.; Moritz, R.; Mikulla, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2004 | Astigmatism and beam quality of high-brightness tapered diode lasers
Kelemen, M.T.; Weber, J.; Kallenbach, S.; Pfahler, C.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2004 | High-power high-brightness tapered diode lasers and amplifiers for eye-safe operation
Kallenbach, S.; Kelemen, M.T.; Aidam, R.; Lösch, R.; Kaufel, G.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2004 | High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9µm
Pfahler, C.; Manz, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Wagner, J. | Konferenzbeitrag |
| 2004 | Reliability of 70 nm metamorphic HEMTs
Dammann, M.; Leuther, A.; Quay, R.; Meng, M.; Konstanzer, H.; Jantz, W.; Mikulla, M. | Zeitschriftenaufsatz |
| 2004 | Robust GaN HEMT low-noise amplifier MMICs for X-band applications
Krausse, D.; Quay, R.; Kiefer, R.; Tessmann, A.; Massler, H.; Leuther, A.; Merkle, T.; Müller, S.; Schwörer, C.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Konferenzbeitrag |
| 2003 | 70 nm low-noise metamorphic HEMT technology on 4 Inch GaAs wafers
Leuther, A.; Tessmann, A.; Dammann, M.; Reinert, W.; Schlechtweg, M.; Mikulla, M.; Walther, M.; Weimann, G. | Konferenzbeitrag |
| 2003 | Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2003 | Developments in tapered lasers at 980 nm to 1060 nm
Mikulla, M.; Kelemen, M.T.; Weber, J.; Walther, M.; Weimann, G. | Konferenzbeitrag |
| 2003 | Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
Rinner, F.; Rogg, J.; Kelemen, M.T.; Mikulla, M.; Weimann, G.; Tomm, J.W.; Thamm, E.; Poprawe, R. | Zeitschriftenaufsatz |
| 2003 | High-brightness 1040 nm tapered diode laser
Kelemen, M.T.; Weber, J.; Rinner, F.; Rogg, J.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2003 | Improved brightness using tapered diode lasers
Kelemen, M.T.; Weber, J.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2003 | Silicon nitride films deposited using ECR-PECVD technique for coating InGaAlAs high power laser facets
Sah, R.E.; Rinner, F.; Baumann, H.; Kiefer, R.; Mikulla, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2002 | AlGaN/GaN HEMTs on SiC operating at 40 GHz
Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Konferenzbeitrag |
| 2002 | AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2002 | Band-edge aligned quaternary carrier barriers in InGaAs-AlGaAs high-power diode lasers for improved high-temperature operation
Wiedmann, N.; Schmitz, J.; Boucke, K.; Herres, N.; Wagner, J.; Mikulla, M.; Poprawe, R.; Weimann, G. | Zeitschriftenaufsatz |
| 2002 | Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers
Kelemen, M.T.; Weber, J.; Rogg, J.; Rinner, F.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2002 | Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers
Rinner, F.; Rogg, J.; Wiedmann, N.; Konstanzer, H.; Dammann, M.; Mikulla, M.; Poprawe, R.; Weimann, G. | Konferenzbeitrag |
| 2002 | High-density plasma deposited silicon nitride films for coating InGaAlAs high-power lasers
Sah, R.E.; Rinner, F.; Kiefer, R.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2002 | High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm
Kelemen, M.T.; Rinner, F.; Rogg, J.; Wiedmann, N.; Kiefer, R.; Walther, M.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2002 | High-reliability MOCVD-grown quantum dot laser
Sellin, R.L.; Ribbat, C.; Bimberg, D.; Rinner, F.; Konstanzer, H.; Kelemen, M.T.; Mikulla, M. | Zeitschriftenaufsatz |
| 2002 | Large area MSM photodiode array for 0.85µm wavelength 10 Gbit/s per channel parallel optical links
Hurm, V.; Bronner, W.; Benz, W.; Köhler, K.; Kropp, J.-R.; Lösch, R.; Ludwig, M.; Mann, G.; Mikulla, M.; Rosenzweig, J.; Schlechtweg, M.; Walther, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2002 | Longitudinal carrier density measurement of high power broad area laser diodes
Rinner, F.; Rogg, J.; Friedmann, P.; Mikulla, M.; Weimann, G.; Poprawe, R. | Zeitschriftenaufsatz |
| 2002 | Near-diffraction-limited high power diode laser tunable from 895 to 960 nm
Kelemen, M.T.; Rinner, F.; Rogg, J.; Kiefer, R.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2002 | Potential of metamorphic HEMT with 0.25µm refractory metal gate for power application in Ka-Band
Benkhelifa, F.; Quay, R.; Lösch, R.; Schäuble, K.; Dammann, M.; Mikulla, M.; Weimann, G. | Konferenzbeitrag |
| 2001 | Etch-depth dependence of laser diodes using angular filtering by total reflection
Rogg, J.; Boucke, K.; Kelemen, M.T.; Rinner, F.; Pletschen, W.; Kiefer, R.; Walther, M.; Mikulla, M.; Poprawe, R.; Weimann, G. | Konferenzbeitrag |
| 2001 | High Power 980 nm Laser Diodes by MBE
Mikulla, M.; Kelemen, M.T.; Walther, M.; Kiefer, R.; Moritz, R.; Weimann, G. | Konferenzbeitrag |
| 2001 | High-brightness laser diodes using angular filtering by total reflection
Rogg, J.; Boucke, K.; Kelemen, M.T.; Rinner, F.; Pletschen, W.; Kiefer, R.; Walther, M.; Mikulla, M.; Poprawe, R.; Weimann, G. | Konferenzbeitrag |
| 2001 | Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers
Wiedmann, N.; Jandeleit, J.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Poprawe, R.; Weimann, G. | Konferenzbeitrag |
| 2001 | Thermally induced stress changes in high-density plasma deposited silicon nitride films
Sah, R.E.; Baumann, H.; Mikulla, M.; Kiefer, R.; Weimann, G. | Konferenzbeitrag |
| 2000 | 267-W cw AlGaAs/GaInAs diode laser bars
Braunstein, J.; Mikulla, M.; Kiefer, R.; Walther, M.; Jandeleit, J.; Brandenburg, W.; Loosen, P.; Poprawe, R.; Weimann, G. | Konferenzbeitrag |
| 2000 | Diode lasers now compete with solid-state systems
Mikulla, M.; Braunstein, J. | Zeitschriftenaufsatz |
| 2000 | High-efficiency high-power InAlGaAs laser diodes at 980 nm
Mikulla, M.; Schmitt, A.; Bihlmann, G.; Weber, B.; Moritz, R.; Müller, S.; Braunstein, J.; Weimann, G. | Konferenzbeitrag |
| 2000 | High-power diode laser bars >250 W
Mikulla, M.; Walther, M.; Kiefer, R.; Jandeleit, J.; Brandenburg, P.; Loosen, P.; Poprawe, R.; Weimann, G. | Konferenzbeitrag |
| 2000 | Improved high-temperature operation of InGaAs/AlGaAs high-power quantum well lasers by short-period superlattice barriers
Wiedmann, N.; Jandeleit, J.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Poprawe, R.; Weimann, G. | Konferenzbeitrag |
| 2000 | Modeling of the performance of high-brightness tapered lasers
Mariojouls, S.; Morgott, S.; Schmitt, A.; Mikulla, M.; Braunstein, J.; Weimann, G.; Lozes, F.; Bonnefont, S. | Konferenzbeitrag |
| 2000 | Tapered high-power, high-brightness diode lasers: Design and performance
Mikulla, M. | Aufsatz in Buch |
| 1999 | 25-W CW high-brightness tapered semiconductor laser-array
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G. | Zeitschriftenaufsatz |
| 1999 | High-efficiency and high-brightness 980-nm AlGaAs/InGaAs diode lasers
Braunstein, J.; Mikulla, M.; Schmitt, A.; Kiefer, R.; Walther, M.; Weimann, G. | Konferenzbeitrag |
| 1999 | High-power InAlGaAs laser diodes with high efficiency at 980 nm
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Moritz, R.; Müller, S.; Sah, R.E.; Braunstein, J.; Weimann, G. | Konferenzbeitrag |
| 1999 | Stability of the beam quality of 0.98 mu m InGaAlAs tapered laser oscillators
Schmitt, A.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G. | Konferenzbeitrag |
| 1998 | Diodenlaser-Oszillator oder- Verstaerker mit wenigstens einer lichtleitenden Halbleiterschicht
Mikulla, M.; Chazan, P. | Patent |
| 1998 | High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures
Mikulla, M.; Chazan, P.; Schmitt, A.; Morgott, S.; Wetzel, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G. | Zeitschriftenaufsatz |
| 1998 | High-power (> 25 W cw) tapered laser bars with high brightness at 980 nm
Braunstein, J.; Mikulla, M.; Schmitt, A.; Schleife, J.; Bihlmann, G. | Konferenzbeitrag |
| 1998 | High-power near-diffraction-limited external cavity laser, tunable from 1030 to 1085 nm
Morgott, S.; Chazan, P.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G. | Zeitschriftenaufsatz |
| 1998 | Improved beam quality for high power tapered laser diodes with LMG (Low Modal Gain) epitaxial layer structures
Mikulla, M.; Schmitt, A.; Chazan, P.; Wetzel, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G. | Konferenzbeitrag |
| 1997 | Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
Arias, J.; Esquivias, I.; Bürkner, S.; Chazan, P.; Ralston, J.D.; Larkins, E.C.; Mikulla, M.; Weisser, S.; Rosenzweig, J. | Konferenzbeitrag |
| 1997 | Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers
Chazan, P.; Morgott, S.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Moritz, R.; Daleiden, J.; Braunstein, J.; Weimann, G. | Konferenzbeitrag |
| 1996 | Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J. | Konferenzbeitrag |
| 1996 | High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy
Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A. | Konferenzbeitrag |