Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices
Besendörfer, S.; Meissner, E.; Lesnik, A.; Friedrich, J.; Dadgar, A.; Erlbacher, T.
Zeitschriftenaufsatz
2019Theoretical aspects and microstructural investigations on V-pit defects in HVPE grown GaN
Knetzger, M.; Meissner, E.; Schröter, C.; Friedrich, J.
Zeitschriftenaufsatz
2018The GaN trench gate MOSFET with floating islands
Shen, L.; Müller, S.; Cheng, X.; Zhang, D.; Zheng, L.; Xu, D.; Yu, Y.; Meissner, E.; Erlbacher, T.
Zeitschriftenaufsatz
2017A practical example of GaN-LED failure cause analysis by application of combined electron microscopy techniques
Meissner, E.; Haeckel, M.; Friedrich, J.
Zeitschriftenaufsatz
2016Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation
Lehmann, T.; Reimann, C.; Meissner, E.; Friedrich, J.
Zeitschriftenaufsatz
2016Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics
Knetzger, M.; Meissner, E.; Derluyn, J.; Germain, M.; Friedrich, J.
Zeitschriftenaufsatz
2016Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices
Knetzger, M.; Meissner, E.; Derluyn, J.; Germain, M.; Friedrich, J.
Konferenzbeitrag
2016Synthesis of metastable Co4N, Co3N, Co2N, and CoO0.74N0.24 from a single azide precursor and intermediates in CoBr2 ammonolysis
Widenmeyer, M.; Shlyk, L.; Becker, N.; Dronskowski, R.; Meissner, E.; Niewa, R.
Zeitschriftenaufsatz
2015Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips
Fuegl, M.; Mackh, G.; Meissner, E.; Frey, L.
Konferenzbeitrag
2015Response of as grown dislocation structure to temperature and stress treatment in multi-crystalline silicon
Reimann, C.; Friedrich, J.; Meissner, E.; Oriwol, D.; Sylla, L.
Zeitschriftenaufsatz
2015Species transport by natural convection of supercritical ammonia
Seebeck, J.; Savva, P.; Erlekampf, J.; Meissner, E.; Friedrich, J.; Frey, L.
Konferenzbeitrag
2015Structural and optical properties of AlN grown by solid source solution growth method
Kangawa, Y.; Suetsugu, H.; Knetzger, M.; Meissner, E.; Hazu, K.; Chichibu, S.F.; Kajiwara, T.; Tanaka, S.; Iwasaki, Y.; Kakimoto, K.
Zeitschriftenaufsatz
2014Analytical stress characterization after different chip separation methods
Fuegl, M.; Mackh, G.; Meissner, E.; Frey, L.
Zeitschriftenaufsatz
2014Formation and decomposition of iron nitrides observed by in situ powder neutron diffraction and thermal analysis
Widenmeyer, M.; Hansen, T.C.; Meissner, E.; Niewa, R.
Zeitschriftenaufsatz
2014Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth
Carl, E.R.; Danilewsky, A.; Meissner, E.; Geiger, T.
Zeitschriftenaufsatz
2014Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale
Lehmann, T.; Trempa, M.; Meissner, E.; Zschorsch, M.; Reimann, C.; Friedrich, J.
Zeitschriftenaufsatz
2014Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes
Erlekampf, J.; Seebeck, J.; Savva, P.; Meissner, E.; Friedrich, J.; Alt, N.S.A.; Schlücker, E.; Frey, L.
Konferenzbeitrag, Zeitschriftenaufsatz
2014On the formation mechanism of chromium nitrides: An in situ study
Widenmeyer, M.; Meissner, E.; Senyshyn, A.; Niewa, R.
Zeitschriftenaufsatz
2014Preface. 8th International Workshop on Bulk Nitrides Semiconductors, IWBNS 2013
Freitas, J.A.; Meissner, E.; Paskova, T.; Miyake, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2014Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN
Sintonen, S.; Rudziński, M.; Suihkonen, S.; Jussila, H.; Knetzger, M.; Meissner, E.; Danilewsky, A.; Tuomi, T.O.; Lipsanen, H.
Zeitschriftenaufsatz
2012Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN
Meissner, E.; Schweigard, S.; Friedrich, J.; Paskova, T.; Udwary, K.; Leibiger, G.; Habel, F.
Zeitschriftenaufsatz
2012Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy
Rumler, Maximilian; Rommel, Mathias; Erlekampf, Jürgen; Azizi, Maral; Geiger, Tobias; Bauer, Anton J.; Meißner, Elke; Frey, Lothar
Zeitschriftenaufsatz
2012Considerations on the effect of interstitial and precipitated Fe in intentionally Fe-doped mc-silicon
Azizi, M.; Meissner, E.; Friedrich, J.
Konferenzbeitrag
2012Development of a novel in situ monitoring technology for ammonothermal reactors
Alt, N.S.A.; Meissner, E.; Schluecker, E.
Zeitschriftenaufsatz
2012In situ monitoring technologies for ammonthermal reactors
Alt, N.; Meissner, E.; Schlücker, E.; Frey, L.
Zeitschriftenaufsatz
2012Ohmic and rectifying contacts on bulk AlN for radiation detector applications
Erlbacher, Tobias; Bickermann, Matthias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J.; Frey, Lothar
Zeitschriftenaufsatz, Konferenzbeitrag
2011Liquid phase epitaxy (LPE) of GaN on c- and r-faces of AlN substrates
Azizi, M.; Meissner, E.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2010Chapter 11: A brief review on the Na-flux method toward growth of large-size GaN crystal
Ehrentraut, D.; Meissner, E.
Aufsatz in Buch
2010Chapter 12: Low pressure solution growth of gallium nitride
Meissner, E.; Hussy, S.; Friedrich, J.
Aufsatz in Buch
2010Interactions of dislocations during epitaxial growth of SiC and GaN
Friedrich, J.; Kallinger, B.; Berwian, P.; Meissner, E.
Konferenzbeitrag
2010Selective etching of dislocations in GaN grown by low-pressure solution growth
Knoke, I.Y.; Berwian, P.; Meissner, E.; Friedrich, J.; Strunk, H.P.; Müller, G.
Zeitschriftenaufsatz
2010Ultrasound measurement of the position of the growing interface during directional solidification of silicon
Azizi, M.; Meissner, E.; Friedrich, J.
Konferenzbeitrag
2009Properties of TaN thin films produced using PVD linear dynamic deposition technique
Kozlowska, M.; Oechsner, R.; Pfeffer, M.; Bauer, A.J.; Meissner, E.; Pfitzner, L.; Ryssel, H.; Maass, W.; Langer, J.; Ocker, B.; Schmidbauer, S.; Gonchond, J.-P.
Zeitschriftenaufsatz, Konferenzbeitrag
2008Application of a thermogravimetric technique for the determination of low nitrogen solubilities in metals
Sun, G.; Meißner, E.; Berwian, R.; Müller, G.
Zeitschriftenaufsatz
2008Crystal growth of compound semiconductors with low dislocation densities
Friedrich, J.; Kallinger, B.; Knoke, I.; Berwian, P.; Meissner, E.
Konferenzbeitrag
2008Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch
Hussy, S.; Meissner, E.; Berwian, P.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2008On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaN
Hussy, S.; Berwian, P.; Meissner, E.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2008Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets
Wunderer, T.; Hertkorn, J.; Lipski, F.; Brückner, P.; Feneberg, M.; Schirra, M.; Thonke, K.; Knoke, I.; Meissner, E.; Chuvilin, A.; Kaiser, U.; Scholz, F.
Konferenzbeitrag
2008Reduction of the dislocation density in GaN during low-pressure solution growth
Knoke, I.Y.; Meissner, E.; Friedrich, J.; Strunk, H.P.; Müller, G.
Zeitschriftenaufsatz
2008Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material
Kallinger, B.; Meissner, E.; Berwian, P.; Hussy, S.; Friedrich, J.; Mueller, G.
Zeitschriftenaufsatz
2007Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere
Sun, G.; Meissner, E.; Berwian, P.; Müller, G.; Friedrich, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2007Study on the sublimation growth of GaN using different powder sources and investigation on the sublimation behaviour of GaN powder by means of thermogravimetry
Kallinger, B.; Meissner, E.; Seng, D.; Sun, G.; Hussy, S.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2006Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements
Birkmann, B.; Salcianu, C.; Meissner, E.; Hussy, S.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2006Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN
Birkmann, B.; Hussy, S.; Sun, G.; Berwian, P.; Meissner, E.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2006Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia
Sun, G.; Meissner, E.; Hussy, S.; Birkmann, B.; Friedrich, J.; Müller, G.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Morphology and microstructure of a-plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG)
Hussy, S.; Meissner, E.; Birkmann, B.; Brauer, I.; Off, J.; Scholz, F.; Strunk, H.P.; Müller, G.
Zeitschriftenaufsatz
2006Verfahren zur Erhoehung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze
Friedrich, J.; Mueller, G.; Meissner, E.; Birkmann, B.; Hussy, S.
Patent
2006Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
Friedrich, J.; Mueller, G.; Apelt, R.; Meissner, E.; Birkmann, B.; Hussy, S.
Patent
2006Vorrichtung und Verfahren zur Herstellung von Schichten und/oder Kristallen aus Nitriden von Metallen der Gruppe III des PSE sowie entsprechende Einkristalle
Meissner, E.; Müller, G.; Friedrich, J.
Patent
2005Characterisation of GaN crystals and epilayers grown from a solution at room pressure
Meissner, E.; Birkmann, B.; Hussy, S.; Sun, G.; Friedrich, J.; Müller, G.
Zeitschriftenaufsatz
2004Growth of GaN crystals and epilayers from solutions at ambient pressure
Meissner, E.; Sun, G.; Hussy, S.; Birkmann, B.; Friedrich, J.; Müller, G.
Konferenzbeitrag
2002A Process- and Product-Centered Approach to Knowledge Management
Sifaqui, C.; Meißner, E.
Konferenzbeitrag
2002Selected Readings in Computer Graphics 2001. CD-ROM
: Encarnacao, J.L.; Malkewitz, R.; Meißner, E.
Audiovisuelles Material
2001Evaluierung von Dokumentenmanagement-Systemen für den Bedarf eines Forschungsinstitutes mit einer prototypischen Implementierung
Olbrich, M.
: Meissner, E. (Prüfer)
Diplomarbeit
2001Structuring knowledge with XML
Meißner, E.
Konferenzbeitrag
2001XML-Topic-Maps für Verwaltung und Retrieval von Kompetenzen in einem F&E-Institut
Haller, C.
: Meißner, E. (Prüfer)
Diplomarbeit
2000Einsatz von XML zur Optimierung von Geschäftsprozessen
Beyer-Neumann, A.
: Meißner, E. (Prüfer); Neumann, L. (Prüfer)
Diplomarbeit
1999XML-Constraints with Scheme
Meißner, E.
Konferenzbeitrag
1996Sinterverhalten, Gefüge und Eigenschaften von TiC(x)N(1-x)/Si3N4-Verbundwerkstoffen
Herrmann, M.; Schubert, C.; Hermel, W.; Meißner, E.; Ziegler, G.
Zeitschriftenaufsatz
1996Workflow and SGML
Meißner, E.
Konferenzbeitrag
1993Microstructure, mechanical properties and wear of Si3N4/TiN composites
Herrmann, M.; Beger, A.; Schubert, C.; Hermel, W.; Meißner, E.; Ziegler, G.
Konferenzbeitrag