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| 2016 | Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2016 | Prospects and limitations of stacked-FET approaches for enhanced output power in voltage-controlled oscillators
Thome, F.; Maroldt, S.; Ambacher, O. | Zeitschriftenaufsatz |
| 2015 | A 200 GHz driver amplifier in metamorphic HEMT technology
Amado-Rey, A.B.; Campos-Roca, Y.; Maroldt, S.; Tessmann, A.; Massler, H.; Leuther, A.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T. | Zeitschriftenaufsatz |
| 2015 | A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Examples of High-speed Harmonic Load Pull Investigations of High-Efficiency GaN Power Transistors
Marchetti, M.; Maier, T.; Carrubba, V.; Maroldt, S.; Mußer, M.; Quay, R. | Konferenzbeitrag |
| 2015 | High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O. | Zeitschriftenaufsatz |
| 2015 | Impact of metallization layer structure on the performance of G-band branch-line couplers
Amado-Rey, A.B.; Campos-Roca, Y.; Weber, R.; Maroldt, S.; Tessmann, A.; Massler, H.; Wagner, S.; Leuther, A.; Ambacher, O. | Zeitschriftenaufsatz |
| 2015 | Investigations of higher order doherty amplifiers for high power-efficiency AlGaN/GaN amplifier design
Krause, S.
: Zwick, T. (Supervisor); Quay, R. (Supervisor); Maroldt, S. (Supervisor) | Master Thesis |
| 2015 | Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2015 | Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers
Thome, F.; Maroldt, S.; Ambacher, O. | Konferenzbeitrag |
| 2015 | With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T. | Konferenzbeitrag |
| 2014 | Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2014 | A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s
Thome, F.; Maroldt, S.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Planar zero bias Schottky diodes on an InGaAs metamorphic HEMT MMIC process
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2014 | Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Raay, F. van; Quay, R.; Ambacher, O.; Wiegner, D.; Seyfried, U.; Bohn, T.; Pascht, A. | Zeitschriftenaufsatz |
| 2014 | Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2014 | Source/load pull investigation of AlGaN/GaN power transistors with ultra-high efficiency
Carrubba, V.; Quay, R.; Maroldt, S.; Musser, M.; Raay, F. van; Ambacher, O. | Konferenzbeitrag |
| 2013 | (In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies
Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O. | Zeitschriftenaufsatz |
| 2013 | Class-BJ power amplifier modes: The IMD behavior of reactive terminations
Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2013 | Class-BJ power amplifier modes: The IMD behavior of reactive terminations
Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2013 | A package-integrated 50W high-efficiency RF CMOS-GaN class-E power amplifier
Heijden, M.P. van der; Acar, M.; Maroldt, S. | Konferenzbeitrag |
| 2013 | QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R. | Konferenzbeitrag |
| 2013 | QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R. | Konferenzbeitrag |
| 2013 | Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation
Krause, S.; Maroldt, S.; Zech, C.; Quay, R.; Hein, M. | Konferenzbeitrag |
| 2012 | Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2012 | Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Maroldt, Stephan
: Ambacher, Oliver | Dissertation |
| 2012 | A high gain SiGe-GaN switching power amplifier in the GHz-range
Heck, S.; Bräckle, A.; Berroth, M.; Maroldt, S.; Quay, R. | Konferenzbeitrag |
| 2012 | An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital transmitters in 100 nm GaN technology
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A. | Konferenzbeitrag |
| 2012 | An integrated 12 Gbps switch-mode driver MMIC with 5 VPP for digital transmitters in 100 nm GaN technology
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A. | Konferenzbeitrag |
| 2012 | Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S. | Zeitschriftenaufsatz |
| 2011 | 900 MHz pulse-width-modulated class-S power amplifier with improved linearity
Maier, S.; Wiegner, D.; Zierdt, M.; Kuebart, W.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R. | Konferenzbeitrag |
| 2011 | Broadband GaN-based switch-mode core MMICs with 20 W output power operating at UHF
Maroldt, S.; Quay, R.; Haupt, C.; Ambacher, O. | Konferenzbeitrag |
| 2011 | Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R. | Konferenzbeitrag |
| 2011 | Design and modelling challenges for advanced class-S digital transmitters
Quay, R.; Maroldt, S. | Konferenzbeitrag |
| 2011 | Design and realisation of a 50 W GaN class-E power amplifier
Sochor, P.-L.; Maroldt, S.; Musser, M.; Walcher, H.; Kalim, D.; Quay, R.; Negra, R. | Konferenzbeitrag |
| 2011 | Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2011 | Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O. | Zeitschriftenaufsatz |
| 2011 | GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O. | Zeitschriftenaufsatz |
| 2011 | A high-power dual-gate GaN switching-amplifier in the GHz-range
Heck, S.; Brackle, A.; Berroth, M.; Maroldt, S.; Quay, R. | Konferenzbeitrag |
| 2011 | Simultaneous transmission of non-contiguous frequency bands for mobile radio using a pulse-width-modulated switch-mode stage
Maier, S.; Wiegner, D.; Zierdt, M.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R. | Konferenzbeitrag |
| 2010 | Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz
Maroldt, S.; Wiegner, D.; Vitanov, S.; Palankovski, V.; Quay, R.; Ambacher, O. | Zeitschriftenaufsatz |
| 2010 | Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Maroldt, S. | Dissertation |
| 2010 | GaN devices for communication applications: Evolution of amplifier architectures
Schmid, U.; Reber, R.; Chartier, S.; Widmer, K.; Oppermann, M.; Heinrich, W.; Meliani, C.; Quay, R.; Maroldt, S. | Zeitschriftenaufsatz |
| 2010 | High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2010 | Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, Wilfried; Kiefer, R.; Maroldt, S.; Müller, Stefan; Quay, Rüdiger; Mikulla, Michael; Ambacher, O. | Konferenzbeitrag |
| 2010 | Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O. | Konferenzbeitrag |
| 2009 | Composition and interface chemistry dependence in ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions
Kolaklieva, L.; Kakanakov, R.; Stefanov, P.; Cimalla, V.; Maroldt, S.; Ambacher, O.; Tonisch, K.; Niebelschütz, F. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2009 | Gallium nitride MMICs for mm-wave power operation
Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A. | Zeitschriftenaufsatz |
| 2009 | Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
Maroldt, S.; Haupt, C.; Pletschen, W.; Müller, S.; Quay, R.; Ambacher, O.; Schippel, C.; Schwierz, F. | Zeitschriftenaufsatz |
| 2009 | High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2009 | High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R. | Konferenzbeitrag |
| 2009 | L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2009 | A simulation study of enhancement-mode AlGaN/GaN HEMTs with recessed gates
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R. | Konferenzbeitrag |
| 2008 | The role of Ti/Al ratio in nanolayered ohmic contacts for GaN/AlGaN HEMTs
Kolaklieva, L.; Kakanakov, R.; Cimalla, V.; Maroldt, S.; Niebelschütz, F.; Tonisch, K.; Ambacher, O. | Konferenzbeitrag |