Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier
Lv, Hua; Leitao, Diana C.; Hou, Zhiwei; Freitas, Paulo P.; Cardoso, Susana; Kämpfe, Thomas; Müller, Johannes; Langer, Juergen; Wrona, Jerzy
Zeitschriftenaufsatz
2018Datenschutz stärken, Innovationen ermöglichen. Policy paper
Roßnagel, Alexander; Bile, Tamer; Geminn, Christian; Grigorjew, Olga; Johannes, Paul C.; Karaboga, Murat; Krämer, Nicole; Maier, Natalie; Martin, Nicholas; Müller, Johannes; Nebel, Maxi; Friedewald, Michael; Bremert, Benjamin
Bericht
2018Tuning parameters and their impact on ferroelectric hafnium oxide
Polakowski, Patrick; Büttner, Teresa; Ali, Tarek Nadi Ismail; Riedel, Stefan; Kämpfe, Thomas; Seidel, Konrad; Müller, Johannes; Pätzold, Björn
Vortrag
2017Capacitance maximization of ultra-thin Si-capacitors by atomic layer deposition of anti-ferroelectric HfO2 in high aspect ratio structures
Riedel, Stefan; Weinreich, Wenke; Mart, Clemens; Müller, Johannes
Vortrag
2017Gewitter im Chip - Resistive Speicher für low-power Anwendungen
Seidel, Konrad; Riedel, Stefan; Kalishettyhalli Ma, Mamathamba; Polakowski, Patrick; Müller, Johannes
Konferenzbeitrag
2017Properties of ALD ferroelectric Si-doped HfO2 characterized with noncontact Corona-Kelvin metrology
Polakowski, Patrick; Müller, Johannes; Marinskiy, Dmitriy; Findlay, Andrew; Edelman, Piotr; Wilson, Marshall; Lagowski, Jacek; Metzger, Joachim; Binder, Robert
Vortrag
2017PVD and ALD process development of advanced oxide-based RRAM-stacks
Kalishetthyhalli Mahadevaiah, Mamathamba
: Müller, Johannes (Gutachter); Lakner, Hubert (Gutachter); Fischer, Wolf-Joachim (Gutachter)
Master Thesis
2017Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; Bentum, Ralf van; Mikolajick, Thomas; Slesazeck, Stefan
Zeitschriftenaufsatz
2016Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories
Yurchuk, Ekaterina; Müller, Johannes; Müller, Stefan; Paul, Jan; Pesic, Milan; Benthum, Ralf van; Schroeder, Uwe; Mikolajick, Thomas
Zeitschriftenaufsatz
2016Development and electrical characterization of a metal-ferroelectric-insulator semiconductor FET test structure
Ali, Tarek
: Müller, Johannes (Betreuer); Lakner, Hubert (Betreuer); Heyns, Marc
Master Thesis
2015Ferroelektrizität in Hafniumdioxid und deren Anwendung in nicht-flüchtigen Halbleiterspeichern
Müller, Johannes
Dissertation
2015Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)
Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine
Konferenzbeitrag
2015New approach for measurement & simulation in sheet metal forming
Ackert, Patrick; Schwarz, Christian; Müller, Johannes; Landgrebe, Dirk
Vortrag
2015Next-generation ferroelectric memories based on FE-HfO2
Müller, S.; Slesazeck, S.; Mikolajick, T.; Müller, Johannes; Polakowski, Patrick; Flachowsky, S.
Konferenzbeitrag
2015The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films
Guan, Yan; Zhou, Dayu; Xu, Jin; Liu, Xiaohua; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schroeder, Uwe
Zeitschriftenaufsatz
2015Scaling and optimization of ferroelectric hafnium oxide for memory applications and beyond
Müller, Johannes; Riedel, Stefan; Polakowski, Patrick
Vortrag
2014Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications
Polakowski, Patrick; Riedel, Stefan; Weinreich, Wenke; Rudolf, M.; Sundqvist, Jonas; Seidel, Konrad; Müller, Johannes
Konferenzbeitrag
2014Ferroelectric hafnium oxide based materials and devices
Müller, Johannes; Polakowski, Patrick; Müller, Stefan; Mikolajick, Thomas
Konferenzbeitrag
2014Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress
Lagger, Peter; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, Andreas; Müller, Johannes; Wilde, Lutz; Sundqvist, Jonas; Pogany, D.
Zeitschriftenaufsatz
2013Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Konferenzbeitrag, Zeitschriftenaufsatz
2012Incipient ferroelectricity in Al-doped HfO2 thin films
Mueller, Stefan; Mueller, Johannes; Singh, Aarti; Riedel, Stefan; Sundqvist, Jonas; Schroeder, Uwe; Mikolajick, Thomas
Zeitschriftenaufsatz