Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018C-V characterization technique for four-terminal GaN-on-Si HEMTs based on 3-port S-parameter measurements
Salcines, Cristino; Mönch, Stefan; Spudic, Boris; Kallfass, Ingmar
Konferenzbeitrag
2018Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2018Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger
Konferenzbeitrag
2018Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2017Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag