| | |
|---|
| 2012 | Correlation-aware analysis of the impact of process variations on circuit behavior
Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian | Konferenzbeitrag |
| 2012 | Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
| 2011 | Challenges in TCAD simulations of tunneling field effect transistors
Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen | Konferenzbeitrag |
| 2011 | Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2011 | Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium
Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2011 | Hierarchical simulation of process variations and their impact on circuits and systems: Methodology
Lorenz, J.; Bär, E.; Clees, T.; Jancke, R.; Salzig, C.P.J; Selberherr, S. | Zeitschriftenaufsatz |
| 2011 | Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S. | Zeitschriftenaufsatz |
| 2011 | On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2011 | Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J. | Konferenzbeitrag |
| 2011 | Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen | Poster |
| 2011 | Self-heating effects in nano-scaled MOSFETs and thermal aware compact models
Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 2011 | Simulation of plasma immersion ion implantation
Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F. | Konferenzbeitrag |
| 2011 | TCAD challenges and some Fraunhofer solutions
Lorenz, J. | Konferenzbeitrag |
| 2010 | Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines
Baer, E.; Kunder, D.; Evanschitzky, P.; Lorenz, J. | Konferenzbeitrag |
| 2010 | Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric
Baer, E.; Kunder, D.; Lorenz, J.; Sekowski, M.; Paschen, U. | Konferenzbeitrag |
| 2010 | Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD)
Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J. | Konferenzbeitrag |
| 2010 | FD SOI MOSFET compact modeling including process variations
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2010 | Future challenges in CMOS process modelling
Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2010 | Hierarchischer Ansatz für die Monte-Carlo-Simulation komplexer Mixed-Signal-Schaltungen
Jancke, R.; Kampen, C.; Kilic, O.; Lorenz, J. | Konferenzbeitrag |
| 2010 | Impact of technological options for 22 nm SOI CMOS transistors on IC performance
Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J. | Konferenzbeitrag |
| 2010 | Lithography induced layout variations in 6-T SRAM cells
Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 2010 | On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 2009 | Impact of lithography variations on advanced CMOS devices
Lorenz, J.; Kampen, C.; Burenkov, A.; Fühner, T. | Konferenzbeitrag |
| 2009 | Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A. | Zeitschriftenaufsatz |
| 2008 | Application-driven simulation of nanoscaled CMOS transistors and circuits
Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 2008 | On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2007 | Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H. | Abstract, Konferenzbeitrag |
| 2006 | Modeling and simulation - Simulation of process and advanced memories
Lorenz, J.; Hane, M. | Konferenzbeitrag |
| 2006 | Process-induced diffusion phenomena in advanced CMOS technologies
Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F. | Konferenzbeitrag |
| 2005 | Von der Wettbewerbsstrategie zur Umsetzung
Lorenz, J.; Uffmann, J. | Zeitschriftenaufsatz |
| 2004 | 3D feature-scale simulation of sputter etching with coupling to equipment simulation
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2004 | 3D simulation of process effects limiting FinFET performance and scalability
Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 2004 | Adaptive surface triangulations for 3D process simulation
Nguyen, P.-H.; Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 2004 | Genetic algorithm for optimization and calibration in process simulation
Fühner, T.; Erdmann, A.; Ortiz, C.J.; Lorenz, J. | Konferenzbeitrag |
| 2004 | Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation
Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2004 | Three-dimensional simulation of ionized metal plasma vapor deposition
Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2003 | Corner effect in double and triple gate FinFETs
Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 2003 | Figures of merit for CMOS switching speed
Burenkov, A.; Gund, C.; Lorenz, J. | Konferenzbeitrag |
| 2003 | On the role of corner effect in FinFETs
Lorenz, J.; Burenkov, A. | Konferenzbeitrag |
| 2003 | Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2002 | Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers
Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 2002 | Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 2001 | Konzeption eines intramedullären Verriegelungsnagelsystems und Untersuchungen zu dessen Optimierung
Lorenz, J. | Diplom-Arbeit |
| 2000 | 3D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 2000 | A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Zeitschriftenaufsatz |
| 2000 | Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
| 2000 | Diskretisierung und Gittergeneration für die mehrdimensionale Simulation von Implantation und Diffusion
Lorenz, J. | Dissertation |
| 2000 | Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation
Burenkov, A.; Tietzel, K.; Lorenz, J. | Zeitschriftenaufsatz |
| 2000 | Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 1999 | A computationally efficient method for three-dimensional simulation of ion implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Konferenzbeitrag |
| 1999 | Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Bär, E.; Lorenz, J. | Konferenzbeitrag |
| 1999 | Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U. | Konferenzbeitrag |
| 1999 | Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U. | Konferenzbeitrag |
| 1999 | Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology
Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1998 | Coupled 3D process and device simulation of advanced MOSFETs
Tietzel, K.; Burenkov, A.; Lorenz, J. | Konferenzbeitrag |
| 1998 | Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1998 | Integrated three-dimensional topography simulation and its application to dual-damascene processing
Bär, E.; Henke, W.; List, S.; Lorenz, J. | Konferenzbeitrag |
| 1998 | Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Zeitschriftenaufsatz |
| 1998 | Optimization of critical ion implantation steps in 0.18 mu m CMOS technology
Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1998 | Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 1998 | Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1997 | 3D simulation for sub-micron metallization
Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 1997 | 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1997 | 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1997 | Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1997 | Integrated three-dimensional topography simulation of contact hole processing
Bär, E.; Benvenuti, A.; Henke, W.; Jünemann, B.; Kalus, C.; Niedermaier, P.; Lorenz, J. | Konferenzbeitrag |
| 1997 | Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Konferenzbeitrag |
| 1997 | The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes
Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
| 1997 | Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1997 | Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1997 | Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H. | Konferenzbeitrag |
| 1996 | 3-D simulation of LPCVD using segment-based topography discretization
Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
| 1996 | 3D simulation of LPCVD using segment based topography discretization
Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
| 1996 | Experimental verification of three-dimensional simulations of LTO layer deposition using geometries prepared with anisotropic wet-etching of silicon with KOH
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1996 | Fortschrittliche Prozeßmodelle für 0,25 µm CMOS Technologien
Lorenz, J.; Bauer, H.; Burenkov, A.; List, S.; Pichler, P. | Aufsatz in Buch |
| 1996 | Mehrdimensionale Simulation halbleitertechnologischer Fertigungsschritte
Lorenz, J.; Bär, E.; Burenkov, A.; Tietzel, K. | Aufsatz in Buch |
| 1996 | Three-dimensional process simulation
Lorenz, J.; Baccus, B.; Henke, W. | Zeitschriftenaufsatz |
| 1996 | Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1996 | Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1996 | Three-dimensional simulation of low-pressure chemical vapour deposition
Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1995 | 3-dimensional process simulation
Lorenz, J. | Konferenzbeitrag |
| 1995 | 3-dimensional process simulation
: Lorenz, J. | Buch |
| 1995 | 3D simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M. | Konferenzbeitrag |
| 1995 | 3D simulation of tungsten low-pressure chemical vapor deposition in contact holes
Bär, E.; Lorenz, J. | Konferenzbeitrag |
| 1995 | Analytical model for phosphorus large angle tilted implantation
Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Konferenzbeitrag |
| 1995 | Analytical modeling of lateral implantation profiles
Lorenz, J.; Ryssel, H.; Wierzbicki, R.J. | Zeitschriftenaufsatz |
| 1995 | Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon
Simionescu, A.; Herzog, S.; Hobler, G.; Schork, R.; Lorenz, J.; Tian, C.; Stingeder, G. | Zeitschriftenaufsatz |
| 1995 | On the implantation models for simulation of the FOND devices
Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1995 | Physical models in semiconductor process simulation and resulting numerical requirements
Lorenz, J. | Konferenzbeitrag |
| 1995 | Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Konferenzbeitrag |
| 1995 | The STORM technology CAD system
Lorenz, J.; Hill, C.; Jaouen, H.; Lombardi, C.; Lyden, C.; Meyer, K. de; Pelka, J.; Poncet, A.; Rudan, M.; Solmi, S. | Zeitschriftenaufsatz |
| 1995 | Three-dimensional simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M. | Aufsatz in Buch |
| 1995 | Trajectory split method for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. | Zeitschriftenaufsatz |
| 1994 | 3D Simulation of Low Pressure Chemical Vapor Deposition
Bär, E.; Lorenz, J. | Konferenzbeitrag |
| 1994 | Reflection approach for the analytical description of light ion implantation into bilayer structures
Wierzbicki, R.J.; Biersack, J.P.; Barthel, A.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 1993 | STORM - A European platform for sub-micron technology simulation and optimization
Jones, S.K.; Lombardi, C.; Poncet, A.; Lorenz, J.; Hill, C.; Jaonen, H.; Lyden, C.; Meyer, K. de; Pelka, J.; Rudem, M.; Soleni, S. | Konferenzbeitrag |
| 1989 | Improvements in simulation at 2d implantation profiles
Gong, L.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1989 | One- and two-dimensional process simulation with ICECREM and COMPLAN.
Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1989 | Process simulation at FhG-AIS
Lorenz, J. | Konferenzbeitrag |
| 1989 | Programs for VLSI process simulation
Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H. | Konferenzbeitrag |
| 1989 | Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik
Lorenz, J.; Pelka, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 1989 | Simulation of complete process step sequences in silicon technology
Pichler, P.; Lorenz, J. | Konferenzbeitrag |
| 1989 | Simulation of ion implantation into multilayer structures
Wierzbicki, R.J.; Barthel, A.; Lorenz, J. | Konferenzbeitrag |
| 1989 | Simulation of the lateral spread of implanted ions - experiments
Gong, L.; Barthel, A.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
| 1989 | Simulation of the lateral spread of implanted ions - theory
Barthel, A.; Krüger, W.; Lorenz, J. | Konferenzbeitrag |
| 1989 | Two-dimensional simulation of ion implantation profiles using a personal computer
Barthel, A.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 1988 | ASWR - method for the simulation of dopant redistribution in silicon
Lorenz, J.; Svoboda, M. | Konferenzbeitrag |
| 1987 | Comparison of Monte Carlo simulations and analytical models for the calculation of implantation profiles in multilayer targets
Krueger, W.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 1987 | Ion implantation into non-planar targets - Monto Carlo simulations and analytical models
Krueger, W.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 1987 | Monte Carlo ion implantation and COMPOSITE
Lorenz, J.; Ryssel, H.; Barthel, A. | Konferenzbeitrag |
| 1987 | Prozeßsimulation für die Entwicklung mikroelektronischer Schaltkreise
Lorenz, J.; Pelka, J. | Zeitschriftenaufsatz |
| 1986 | Models for implantation into multilayer targets
Ryssel, H.; Lorenz, J.; Hoffmann, K. | Zeitschriftenaufsatz |
| 1985 | COMPOSITE - A complete modelling program of silicon technology
Pelka, J.; Lorenz, J.; Ryssel, H.; Sachs, A.; Seidl, S.; Svoboda, M. | Zeitschriftenaufsatz |