Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Process variability - technological challenge and design issue for nanoscale devices
Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping
Zeitschriftenaufsatz
2018The effect of etching and deposition processes on the width of spacers created during self-aligned double patterning
Baer, Eberhard; Lorenz, Juergen
Konferenzbeitrag
2018Elektronik
Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin
Aufsatz in Buch
2018Pinpointed stimulation of EphA2 receptors via DNA-templated oligovalence
Möser, Christin; Lorenz, Jessica S.; Sajfutdinow, Martin; Smith, David M.
Zeitschriftenaufsatz
2018Process variability for devices at and beyond the 7 nm node
Lorenz, Jürgen; Asenov, Asen; Bär, Eberhard; Barraud, Sylvain; Millar, Campbell; Nedjalkov, Mihail
Konferenzbeitrag
2018Process variability for devices at and beyond the 7 nm node
Lorenz, Juergen; Asenov, Asen; Baer, Eberhard; Barraud, Sylvain; Kluepfel, Fabian; Millar, Campbell; Nedjalkov, Mihail
Zeitschriftenaufsatz
2018Strukturierungsverfahren
Fader, Robert; Lorenz, Jürgen; Rommel, Mathias; Baum, Mario; Danylyuk, Serhiy; Gillner, Arnold; Stollenwerk, Jochen; Bläsi, Benedikt
Aufsatz in Buch
2018Synthetic transient crosslinks program the mechanics of soft, biopolymer-based materials
Lorenz, Jessica; Schnauß, Jörg; Glaser, Martin; Sajfutdinow, Martin; Schuldt, Carsten; Käs, Josef A.; Smith, David M.
Zeitschriftenaufsatz
2017DNA nanotubes as a versatile tool to study semiflexible polymers
Schnauß, J.; Glaser, M.; Lorenz, J.S.; Schuldt, C.; Möser, C.; Sajfutdinow, M.; Händler, T.; Käs, J.A.; Smith, D.M.
Zeitschriftenaufsatz
2017Rab7 - A novel redox target that modulates inflammatory pain processing
Kallenborn-Gerhardt, W.; Möser, C.V.; Lorenz, J.E.; Steger, M.; Heidler, J.; Scheving, R.; Petersen, J.; Kennel, L.; Flauaus, C.; Lu, R.; Edinger, A.L.; Tegeder, I.; Geisslinger, G.; Heide, H.; Wittig, I.; Schmidtko, A.
Zeitschriftenaufsatz
2016A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact
Burenkov, Alex; Lorenz, Juergen
Konferenzbeitrag
2016Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations
Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen
Konferenzbeitrag
2016Simulation of process variations in FinFET transistor patterning
Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen
Konferenzbeitrag
2016Simulation of silicon-dot-based single-electron memory devices
Klüpfel, Fabian Johannes; Burenkov, Alexander; Lorenz, Jürgen
Konferenzbeitrag
2016Simulation of thermo-mechanical effect in bulk-silicon FinFETs
Burenkov, Alex; Lorenz, Jürgen
Zeitschriftenaufsatz, Konferenzbeitrag
2016Tuning synthetic semiflexible networks by bending stiffness
Schuldt, Carsten; Schnauß, Jörg; Händler, Tina; Glaser, Martin; Lorenz, Jessica; Golde, Tom; Käs, Josef A.; Smith, David M.
Zeitschriftenaufsatz
2015Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Minixhofer, Rainer; Filipovic, Lado; Orio, Roberto de; Selberherr, Siegfried
Zeitschriftenaufsatz, Konferenzbeitrag
2015Hierarchical variability-aware compact models of 20nm bulk CMOS
Wang, Xingsheng; Reid, D.; Wang, Liping; Burenkov, A.; Millar, C.; Lorenz, J.; Asenov, A.
Konferenzbeitrag
2015Numerical evaluation of the ITRS transistor scaling
Nagy, R.; Burenkov, A.; Lorenz, J.
Zeitschriftenaufsatz
2015Simulation of plasma immersion ion implantation into silicon
Burenkov, A.; Lorenz, J.; Spiegel, Y.; Torregrosa, F.
Konferenzbeitrag
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Zeitschriftenaufsatz
2014Nox2-dependent signaling between macrophages and sensory neurons contributes to neuropathic pain hypersensitivity
Kallenborn-Gerhardt, W.; Hohmann, S.W.; Syhr, K.M.J.; Schröder, K.; Sisignano, M.; Weigert, A.; Lorenz, J.E.; Lu, R.R.; Brüne, B.; Brandes, R.P.; Geisslinger, G.; Schmidtko, A.
Zeitschriftenaufsatz
2014Oxidant-induced activation of cGMP-dependent protein kinase Iα contributes to neuropathic pain processing after nerve injury
Kallenborn-Gerhardt, W.; Lorenz, J.E.; Lu, R.; Eaton, P.; Geisslinger, G.; Schmidtko, A.
Abstract
2014Oxidant-Induced Activation of cGMP-Dependent Protein Kinase Iα Mediates Neuropathic Pain After Peripheral Nerve Injury
Lorenz, J.E.; Kallenborn-Gerhard, W.; Lu, R.; Syhr, K.M.J.; Eaton, P.; Geisslinger, G.; Schmidtko, A.
Zeitschriftenaufsatz
2014Phosphodiesterase 2A Localized in the Spinal Cord Contributes to Inflammatory Pain Processing
Kallenborn-Gerhard, W.; Lu, R.; Bothe, A.; Thomas, D.; Schlaudraff, J.; Lorenz, J.E.; Lippold, N.; Real, C.I.; Ferreirós, N.; Geisslinger, G.; Turco, D. Del; Schmidtko, A.
Zeitschriftenaufsatz
2014Simulation for statistical variability in realistic 20nm MOSFET
Wang, L.; Brown, A.R.; Millar, C.; Burenkov, A.; Wang, X.; Asenov, A.; Lorenz, J.
Konferenzbeitrag
2014Simulation of AsH3 plasma immersion ion implantation into silicon
Burenkov, Alex; Lorenz, Jürgen; Spiegel, Yohann; Torregrosa, Frank
Konferenzbeitrag
2014Simultaneous simulation of systematic and stochastic process variations
Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David
Konferenzbeitrag
2014Three-dimensional simulation for the reliability and electrical performance of through-silicon vias
Filipovic, Lado; Rudolf, Florian; Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Singulani, Anderson; Minixhofer, Rainer; Selberherr, Siegfried
Konferenzbeitrag
2014Variability-aware compact model strategy for 20-nm bulk MOSFETs
Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen
Konferenzbeitrag
2013Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter
Konferenzbeitrag
2013Double patterning: Simulating a variability challenge for advanced transistors
Evanschitzky, Peter; Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
2013Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
Hackenberg, Moritz; Rommel, Mathias; Rumler, M; Lorenz, Jürgen; Pichler, Peter; Huet, Karim; Negru, Razvan; Fisicaro, Giuseppe; Magna, Antonino la; Taleb, Nadjib; Quillec, M.
Konferenzbeitrag
2013On the strain induced by arsenic into silicon
Koffel, Stéphane; Pichler, Peter; Lorenz, Jürgen; Bisognin, Gabriele; Napolitani, Enrico; Salvador, Davide de
Konferenzbeitrag
2013Self-Heating Effects in Nano-Scaled MOSFETs and Thermal-Aware Compact Models for the SOI CMOS Generation of 2015
Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
2013Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations
Burenkov, Alex; Belko, Viktor; Lorenz, Jürgen
Konferenzbeitrag
2013Technology computer aided design
Lorenz, J.
Aufsatz in Buch
2013Verfahren und Vorrichtung zum parallelen Trennen eines Werkstücks in mehrere Teilstücke
Lorenz, Jürgen; Koitzsch, Matthias; Schellenberger, Martin; Lewke, Dirk; Gumprecht, Thomas
Patent
2012Correlation-aware analysis of the impact of process variations on circuit behavior
Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian
Konferenzbeitrag
2012Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
2011Challenges in TCAD simulations of tunneling field effect transistors
Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
2011Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium
Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Hierarchical simulation of process variations and their impact on circuits and systems: Methodology
Lorenz, J.; Bär, E.; Clees, T.; Jancke, R.; Salzig, C.P.J; Selberherr, S.
Zeitschriftenaufsatz
2011Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.
Zeitschriftenaufsatz
2011On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Konferenzbeitrag
2011Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen
Poster
2011Self-heating effects in nano-scaled MOSFETs and thermal aware compact models
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2011Simulation of plasma immersion ion implantation
Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.
Konferenzbeitrag
2011TCAD challenges and some Fraunhofer solutions
Lorenz, J.
Konferenzbeitrag
2010Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines
Baer, E.; Kunder, D.; Evanschitzky, P.; Lorenz, J.
Konferenzbeitrag
2010Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric
Baer, E.; Kunder, D.; Lorenz, J.; Sekowski, M.; Paschen, Uwe
Konferenzbeitrag
2010Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD)
Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.
Konferenzbeitrag
2010FD SOI MOSFET compact modeling including process variations
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2010Future challenges in CMOS process modelling
Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Hierarchischer Ansatz für die Monte-Carlo-Simulation komplexer Mixed-Signal-Schaltungen
Jancke, R.; Kampen, C.; Kilic, O.; Lorenz, J.
Konferenzbeitrag
2010Impact of technological options for 22 nm SOI CMOS transistors on IC performance
Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.
Konferenzbeitrag
2010Lithography induced layout variations in 6-T SRAM cells
Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2010On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2009Impact of lithography variations on advanced CMOS devices
Lorenz, J.; Kampen, C.; Burenkov, A.; Fühner, T.
Konferenzbeitrag
2009Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.
Zeitschriftenaufsatz
2008Application-driven simulation of nanoscaled CMOS transistors and circuits
Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
2008On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2007Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Abstract
2006Modeling and simulation - Simulation of process and advanced memories
Lorenz, J.; Hane, M.
Konferenzbeitrag
2006Process-induced diffusion phenomena in advanced CMOS technologies
Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F.
Konferenzbeitrag
2005Von der Wettbewerbsstrategie zur Umsetzung
Lorenz, J.; Uffmann, J.
Zeitschriftenaufsatz
20043D feature-scale simulation of sputter etching with coupling to equipment simulation
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
20043D simulation of process effects limiting FinFET performance and scalability
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2004Adaptive surface triangulations for 3D process simulation
Nguyen, P.-H.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2004Genetic algorithm for optimization and calibration in process simulation
Fühner, T.; Erdmann, A.; Ortiz, C.J.; Lorenz, J.
Konferenzbeitrag
2004Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation
Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2004Three-dimensional simulation of ionized metal plasma vapor deposition
Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2003Corner effect in double and triple gate FinFETs
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2003Figures of merit for CMOS switching speed
Burenkov, A.; Gund, C.; Lorenz, J.
Konferenzbeitrag
2003On the role of corner effect in FinFETs
Lorenz, J.; Burenkov, A.
Konferenzbeitrag
2003Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2002Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
2002Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2001Konzeption eines intramedullären Verriegelungsnagelsystems und Untersuchungen zu dessen Optimierung
Lorenz, J.
Diplomarbeit
20003D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2000A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
2000Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
2000Diskretisierung und Gittergeneration für die mehrdimensionale Simulation von Implantation und Diffusion
Lorenz, J.
Dissertation
2000Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation
Burenkov, A.; Tietzel, K.; Lorenz, J.
Zeitschriftenaufsatz
2000Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
1999A computationally efficient method for three-dimensional simulation of ion implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1999Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Bär, E.; Lorenz, J.
Konferenzbeitrag
1999Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Konferenzbeitrag
1999Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Konferenzbeitrag
1999Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology
Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1998Coupled 3D process and device simulation of advanced MOSFETs
Tietzel, K.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
1998Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1998Integrated three-dimensional topography simulation and its application to dual-damascene processing
Bär, E.; Henke, W.; List, S.; Lorenz, J.
Konferenzbeitrag
1998Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
1998Optimization of critical ion implantation steps in 0.18 mu m CMOS technology
Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1998Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
1998Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
19973D simulation for sub-micron metallization
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz, Konferenzbeitrag
19973D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
19973D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Integrated three-dimensional topography simulation of contact hole processing
Bär, E.; Benvenuti, A.; Henke, W.; Jünemann, B.; Kalus, C.; Niedermaier, P.; Lorenz, J.
Konferenzbeitrag
1997Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1997The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
1997Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
19963-D simulation of LPCVD using segment-based topography discretization
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
19963D simulation of LPCVD using segment based topography discretization
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
1996Experimental verification of three-dimensional simulations of LTO layer deposition using geometries prepared with anisotropic wet-etching of silicon with KOH
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1996Fortschrittliche Prozeßmodelle für 0,25 µm CMOS Technologien
Lorenz, J.; Bauer, H.; Burenkov, A.; List, S.; Pichler, P.
Aufsatz in Buch
1996Mehrdimensionale Simulation halbleitertechnologischer Fertigungsschritte
Lorenz, J.; Bär, E.; Burenkov, A.; Tietzel, K.
Aufsatz in Buch
1996Three-dimensional process simulation
Lorenz, J.; Baccus, B.; Henke, W.
Zeitschriftenaufsatz
1996Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1996Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1996Three-dimensional simulation of low-pressure chemical vapour deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
19953-dimensional process simulation
Lorenz, J.
Konferenzbeitrag
19953-dimensional process simulation
: Lorenz, J.
Buch
19953D simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.
Konferenzbeitrag
19953D simulation of tungsten low-pressure chemical vapor deposition in contact holes
Bär, E.; Lorenz, J.
Konferenzbeitrag
1995Analytical model for phosphorus large angle tilted implantation
Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1995Analytical modeling of lateral implantation profiles
Lorenz, J.; Ryssel, H.; Wierzbicki, R.J.
Zeitschriftenaufsatz
1995Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon
Simionescu, A.; Herzog, S.; Hobler, G.; Schork, R.; Lorenz, J.; Tian, C.; Stingeder, G.
Zeitschriftenaufsatz
1995On the implantation models for simulation of the FOND devices
Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1995Physical models in semiconductor process simulation and resulting numerical requirements
Lorenz, J.
Konferenzbeitrag
1995Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1995The STORM technology CAD system
Lorenz, J.; Hill, C.; Jaouen, H.; Lombardi, C.; Lyden, C.; Meyer, K. de; Pelka, J.; Poncet, A.; Rudan, M.; Solmi, S.
Zeitschriftenaufsatz
1995Three-dimensional simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.
Aufsatz in Buch
1995Trajectory split method for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
19943D Simulation of Low Pressure Chemical Vapor Deposition
Bär, E.; Lorenz, J.
Konferenzbeitrag
1994Reflection approach for the analytical description of light ion implantation into bilayer structures
Wierzbicki, R.J.; Biersack, J.P.; Barthel, A.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
1993STORM - A European platform for sub-micron technology simulation and optimization
Jones, S.K.; Lombardi, C.; Poncet, A.; Lorenz, J.; Hill, C.; Jaonen, H.; Lyden, C.; Meyer, K. de; Pelka, J.; Rudem, M.; Soleni, S.
Konferenzbeitrag
1989Improvements in simulation at 2d implantation profiles
Gong, L.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1989One- and two-dimensional process simulation with ICECREM and COMPLAN.
Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1989Process simulation at FhG-AIS
Lorenz, J.
Konferenzbeitrag
1989Programs for VLSI process simulation
Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.
Konferenzbeitrag
1989Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik
Lorenz, J.; Pelka, J.; Ryssel, H.
Zeitschriftenaufsatz
1989Simulation of complete process step sequences in silicon technology
Pichler, P.; Lorenz, J.
Konferenzbeitrag
1989Simulation of ion implantation into multilayer structures
Wierzbicki, R.J.; Barthel, A.; Lorenz, J.
Konferenzbeitrag
1989Simulation of the lateral spread of implanted ions - experiments
Gong, L.; Barthel, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1989Simulation of the lateral spread of implanted ions - theory
Barthel, A.; Krüger, W.; Lorenz, J.
Konferenzbeitrag
1989Two-dimensional simulation of ion implantation profiles using a personal computer
Barthel, A.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz, Konferenzbeitrag
1988ASWR - method for the simulation of dopant redistribution in silicon
Lorenz, J.; Svoboda, M.
Konferenzbeitrag
1987Comparison of Monte Carlo simulations and analytical models for the calculation of implantation profiles in multilayer targets
Krueger, W.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
1987Ion implantation into non-planar targets - Monto Carlo simulations and analytical models
Krueger, W.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
1987Monte Carlo ion implantation and COMPOSITE
Lorenz, J.; Ryssel, H.; Barthel, A.
Konferenzbeitrag
1987Prozeßsimulation für die Entwicklung mikroelektronischer Schaltkreise
Lorenz, J.; Pelka, J.
Zeitschriftenaufsatz
1986Models for implantation into multilayer targets
Ryssel, H.; Lorenz, J.; Hoffmann, K.
Zeitschriftenaufsatz
1985COMPOSITE - A complete modelling program of silicon technology
Pelka, J.; Lorenz, J.; Ryssel, H.; Sachs, A.; Seidl, S.; Svoboda, M.
Zeitschriftenaufsatz