Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2004Microwave sensor based on modulation-doped GaAs/AlGaAs structure
Juozapavicius, A.; Ardaravicius, L.; Suziedelis, A.; Kozic, A.; Gradauskas, J.; Kundrotas, J.; Seliuta, D.; Sirmulis, E.; Asmontas, S.; Valusis, G.; Roskos, H.G.; Köhler, K.
Zeitschriftenaufsatz, Konferenzbeitrag
2003Asymmetrically - shaped diodes for microwave - submillimeter sensing
Asmontas, S.; Ardavicius, L.; Balakauskas, S.; Gradauskas, J.; Kozic, A.; Kundrotas, J.; Köhler, K.; Roskos, H.G.; Sachs, R.; Suziedelis, A.; Seliuta, D.; Sirmulis, E.; Valusis, G.
2003Peculiarities of excitonic photoluminescence of selectively-doped GaAs/Al(0.25)Ga(0.75)As structures
Kundrotas, J.; Asmontas, S.; Suziedelis, A.; Valusis, G.; Roskos, H.G.; Köhler, K.
2003Quenching of transient photoluminescence by strong in-plane electric fields in quantum wells
Kundrotas, J.; Dargys, A.; Asmontas, S.; Valusis, G.; Köhler, K.
2001Alpha particle induced luminescence from multiple quantum wells
Kundrotas, J.; Dargys, A.; Granja, C.; Köhler, K.; Pospísil, S.; Remeikis, V.; Smith, K.M.
2001Changes of MQW photoluminescence under alpha particle irradiation
Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Granja, C.; Pospisil, S.; Köhler, K.
2001Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al(0.35)Ga(0.65)As multiple quantum wells
Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Köhler, K.; Leroy, C.
2000Excitonic photoluminescence quenching by impact ionization of excitons and donors in GaAs/Al(0.35)Ga(0.65)As quantum wells with an in-plane electric field
Kundrotas, J.; Valusis, G.; Cesna, A.; Kundrotaite, A.; Dargys, A.; Suziedelis, A.; Gradauskas, J.; Asmontas, S.; Köhler, K.
1999Influence of Electric Field on Photoluminescence Quenching in GaAs/AlGaAs Quantum Wells
Asmontas, S.; Cesna, A.; Gradauskas, J.; Köhler, K.; Kundrotaite, A.; Kundrotas, J.; Suziedelis, A.; Valusis, G.