Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Zeitschriftenaufsatz
2018Voltage- and temperature-dependent degradation of AIN/GaN high electron mobility transistors
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects
Zibold, Andreas; Dammann, Michael; Schmidt, Ralf; Konstanzer, Helmer; Kunzer, Michael
Zeitschriftenaufsatz
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Zeitschriftenaufsatz
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Zeitschriftenaufsatz
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Konferenzbeitrag
2014Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2012Near-field characteristics of broad area diode lasers during catastrophic optical damage failure
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsässer, T.
Konferenzbeitrag
2012Near-field evolution in strongly pumped broad area diode lasers
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsässer, T.
Konferenzbeitrag
2012Reverse bias stress test of GaN HEMTs for high-voltage switching applications
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2011Near-field dynamics of broad area diode laser at very high pump levels
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.
Zeitschriftenaufsatz
2011Next generation 8xx nm laser bars and single emitters
Strauss, U.; Müller, M.; Swietlik, T.; Fehse, R.; Lauer, C.; Grönninger, G.; König, H.; Keidler, M.; Fillardet, T.; Kohl, A.; Stoiber, M.; Scholl, I.; Biesenbach, J.; Baeumler, M.; Konstanzer, H.
Konferenzbeitrag
2010Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T.
Zeitschriftenaufsatz
2010Reliability status of GaN transistors and MMICs in Europe
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K.
Konferenzbeitrag
2009Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.
Konferenzbeitrag
2004Reliability of 70 nm metamorphic HEMTs
Dammann, M.; Leuther, A.; Quay, R.; Meng, M.; Konstanzer, H.; Jantz, W.; Mikulla, M.
Zeitschriftenaufsatz
2002Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers
Rinner, F.; Rogg, J.; Wiedmann, N.; Konstanzer, H.; Dammann, M.; Mikulla, M.; Poprawe, R.; Weimann, G.
Konferenzbeitrag
2002High-reliability MOCVD-grown quantum dot laser
Sellin, R.L.; Ribbat, C.; Bimberg, D.; Rinner, F.; Konstanzer, H.; Kelemen, M.T.; Mikulla, M.
Zeitschriftenaufsatz
2001Effect of gate metal on reliability of metamorphic HEMTs
Dammann, M.; Leuther, A.; Konstanzer, H.; Jantz, W.
Konferenzbeitrag