Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Characterisation of thin boron-doped diamond films using raman spectroscopy and chemometrics
Knittel, Peter; Stach, Robert; Yoshikawa, Taro; Kirste, Lutz; Mizaikoff, Boris; Kranz, Christine; Nebel, Christoph E.
Zeitschriftenaufsatz
2019Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth
Lebedev, Vadim; Yoshikawa, Taro; Giese, Christian; Kirste, Lutz; Zukauskaite, Agne; Graff, Andreas; Meyer, Frank; Burmeister, Frank; Ambacher, Oliver
Zeitschriftenaufsatz
2019High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared
Müller, Raphael; Gramich, Vera; Wauro, Matthias; Niemasz, Jasmin; Kirste, Lutz; Daumer, Volker; Janaszek, A.; Jureńczyk, J.; Rehm, Robert
Zeitschriftenaufsatz
2019Industrialization of type-II superlattice infrared detector technology at Fraunhofer IAF
Walther, Martin; Daumer, Volker; Rutz, Frank; Stadelmann, Tim; Klinger, Vera; Wörl, Andreas; Niemasz, Jasmin; Kirste, Lutz; Rehm, Robert
Konferenzbeitrag
2019Measurement of internal polarization by QCSE induced level shift in AlGaN quantum cascade emitters
Hofstetter, Daniel; Beck, Hans; Kirste, Lutz; Bour, David P.
Zeitschriftenaufsatz
2018Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
Hahn, Lars; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Passow, Thorsten; Köhler, Klaus; Rehm, Robert; Ambacher, Oliver
Zeitschriftenaufsatz
2018Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices
Monachon, C.; Zielinski, M.S.; Berney, J.; Poppitz, David; Graff, Andreas; Breuer, Steffen; Kirste, Lutz
Konferenzbeitrag
2018Determination of elastic and piezoelectric properties of Al0.84Sc0.16N thin films
Kurz, Nicolas; Parsapour, Fazel; Pashchenko, Vladimir; Kirste, Lutz; Lebedev, Vadim; Pascal, Nicolay; Muralt, Paul; Ambacher, Oliver
Konferenzbeitrag
2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1-xScxN (up to x = 0.41) thin films
Lu, Yuan; Reusch, Markus; Kurz, Nicolas; Ding, Anli; Christoph, Tim; Prescher, Mario; Kirste, Lutz; Ambacher, Oliver; Zukauskaite, Agne
Zeitschriftenaufsatz
2018Electrical properties of schottky-diodes based on B doped diamond
Erlbacher, T.; Huerner, A.; Zhu, Y.; Bach, L.; Schletz, A.; Zürbig, Verena; Pinti, Lucas; Kirste, Lutz; Giese, Christian; Nebel, Christoph E.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2018High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger
Konferenzbeitrag
2018A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching
Waltereit, P.; Preschle, M.; Müller, S.; Kirste, L.; Czap, H.; Ruster, J.; Dammann, M.; Reiner, R.
Konferenzbeitrag
2018Microstructural investigations of polycrystalline Ti2AlN prepared by physical vapor deposition of Ti-AlN multilayers
Gröner, Lukas; Kirste, Lutz; Oeser, Sabine; Fromm, Alexander; Wirth, Marco; Meyer, Frank; Burmeister, Frank; Eberl, Chris
Zeitschriftenaufsatz
2018Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger
Konferenzbeitrag
2018Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substrates
Sinusía Lozano, M.; Pérez-Campos, A.; Reusch, Markus; Kirste, Lutz; Fuchs, Theo; Zukauskaite, Agne; Chen, Z.; Iriarte, G.F.
Zeitschriftenaufsatz
2018Pulsed laser deposition of ferroelectric potassium tantalate-niobate optical waveguiding thin films
Jia, Yuechen; Winkler, Markus; Cheng, Chen; Chen, Feng; Kirste, Lutz; Cimalla, Volker; Zukauskaite, Agne; Szabados, Jan; Breunig, Ingo; Buse, Karsten
Zeitschriftenaufsatz
2018Suppression of iron memory effect in GaN epitaxial layers
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Müller, Stefan; Quay, Rüdiger; Stadelmann, Tim
Zeitschriftenaufsatz
2018Surface morphology and microstructure of pulsed DC magnetron sputtered piezoelectric AlN and AlScN thin films
Lu, Yuan; Reusch, Markus; Kurz, Nicolas; Ding, Anli; Christoph, Tim; Kirste, Lutz; Lebedev, Vadim; Zukauskaite, Agne
Zeitschriftenaufsatz
2018Temperature dependence of the pyroelectric coefficient of AlScN thin films
Kurz, Nicolas; Lu, Yuan; Kirste, Lutz; Reusch, Markus; Zukauskaite, Agne; Lebedev, Vadim; Ambacher, Oliver
Zeitschriftenaufsatz
2018Type II superlattice infrared photodetector research at Fraunhofer IAF
Stadelmann, Tim; Daumer, Volker; Gramich, Vera; Hugger, Tsvetelina; Kirste, Lutz; Klinger, Vera; Kohn, Norbert; Luppold, Wolfgang; Müller, Raphael; Niemasz, Jasmin; Rehm, Robert; Rutz, Frank; Schmidt, Johannes; Walther, Martin; Wauro, Matthias; Wörl, Andreas
Konferenzbeitrag
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Zeitschriftenaufsatz
2017Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV
Shokhovets, Sviatoslav; Kirste, Lutz; Leach, Jacob H.; Krischok, S.; Himmerlich, Marcel
Zeitschriftenaufsatz
2017Failure analysis and defect inspection of electronic devices by high resolution cathodoluminescence
Monachon, C.; Zielinskl, M.S.; Gachet, D.; Sonderegger, S.; Muckenhirn, S.; Barney, J.; Poppitz, D.; Graff, A.; Breuer, S.; Kirste, L.
Konferenzbeitrag
2017Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices
Reusch, Markus; Cherneva, Sabina; Lu, Yuan; Zukauskaite, A.; Kirste, L.; Holc, K.; Datcheva, M.; Stoychev, D.; Lebedev, V.; Ambacher, O.
Zeitschriftenaufsatz
2017Potassium tantalate-niobate mixed crystal thin films for applications in nonlinear integrated optics
Jia, Yuechen; Winkler, Markus; Szabados, Jan; Breunig, Ingo; Kirste, Lutz; Cimalla, Volker; Zukauskaite, Agne; Buse, Karsten
Konferenzbeitrag
2017Potassium-tantalate-niobate mixed crystal thin films for applications in nonlinear integrated optics
Jia, Yuechen; Szabados, Jan; Winkler, Markus; Breunig, Ingo; Cimalla, Volker; Kirste, Lutz; Zukauskaite, Agne; Buse, Karsten
Konferenzbeitrag
2017Structural and electron transport properties of single-crystalline In2o3 films compensated by Ni acceptors
Papadogianni, Alexandra; Kirste, Lutz; Bierwagen, Oliver
Zeitschriftenaufsatz
2016Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices
Reusch, M.; Holc, K.; Pletschen, W.; Kirste, L.; Zukauskaité, A.; Yoshikawa, T.; Iankov, D.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz
2016Doping behavior of (112‾2) GaN grown on patterned sapphire substrates
Meisch, T.; Zeller, R.; Schörner, S.; Thonke, K.; Kirste, L.; Fuchs, T.; Scholz, F.
Zeitschriftenaufsatz
2016Piezoelectric AlN films for FPW sensors with improved device performance
Reusch, M.; Holc, K.; Kirste, L.; Katus, P.; Reindl, L.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz, Konferenzbeitrag
2016Piezoelectric AlN films for FPW sensors with improved device performance
Reusch, M.; Holc, K.; Kirste, L.; Katus, P.; Reindl, L.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz, Konferenzbeitrag
2016Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
Hartmann, C.; Wollweber, J.; Sintonen, S.; Dittmar, A.; Kirste, L.; Kollowa, S.; Irmscher, K.; Bickermann, M.
Zeitschriftenaufsatz
2016The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films
Rombach, J.; Papadogianni, A.; Mischo, M.; Cimalla, V.; Kirste, L.; Ambacher, O.; Berthold, T.; Krischok, S.; Himmerlich, M.; Selve, S.; Bierwagen, O.
Zeitschriftenaufsatz
2015Aluminium nitride membranes with embedded buried IDT electrodes for novel flexural plate wave devices
Reusch, M.; Katus, P.; Holc, K.; Pletschen, W.; Kirste, L.; Zürbig, V.; Iankov, D.; Reindl, L.; Ambacher, O.; Lebedev, V.
Konferenzbeitrag
2015Aluminiumnitrid membranen mit vergrabenen IDT für neuartige membranbiegeschwinger
Reusch, M.; Katus, P.; Schilling, C.; Holc, K.; Pletschen, W.; Kirste, L.; Ambacher, O.; Reindl, L.; Lebedev, V.
Konferenzbeitrag
2015Birefringence and refractive indices of wurtzite GaN in the transparency range
Shokhovets, S.; Himmerlich, M.; Kirste, L.; Leach, J.H.; Krischok, S.
Zeitschriftenaufsatz
2015Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment
Pletschen, W.; Linkohr, S.; Kirste, L.; Cimalla, V.; Müller, S.; Himmerlich, M.; Krischok, S.; Ambacher, O.
Konferenzbeitrag
2015Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates
Kirste, L.; Danilewsky, A.N.; Sochacki, T.; Köhler, K.; Zajac, M.; Kucharski, R.; Bockowski, M.; McNally, P.J.
Konferenzbeitrag
2014Densification of thin aluminum oxide films by thermal treatments
Cimalla, V.; Baeumler, M.; Kirste, L.; Prescher, M.; Christian, B.; Passow, T.; Benkhelifa, F.; Bernhardt, F.; Eichapfel, G.; Himmerlich, M.; Krischok, S.; Pezoldt, J.
Zeitschriftenaufsatz
2014Elastic properties of ultrathin diamond/AlN membranes
Zürbig, V.; Hees, J.; Pletschen, W.; Sah, R.E.; Wolfer, M.; Kirste, L.; Heidrich, N.; Nebel, C.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz
2014Growth and doping of semipolar GaN grown on patterned sapphire substrates
Scholz, F.; Meisch, T.; Caliebe, M.; Schörner, S.; Thonke, K.; Kirste, L.; Bauer, S.; Lazarev, S.; Baumbach, T.
Zeitschriftenaufsatz
2014Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications
Aidam, R.; Diwo, E.; Godejohann, B.-J.; Kirste, L.; Quay, R.; Ambacher, O.
Zeitschriftenaufsatz
2014Infrared photodetector development at Fraunhofer IAF
Rutz, F.; Kleinow, P.; Walther, M.; Aidam, R.; Bronner, W.; Kirste, L.; Niemasz, J.; Rehm, R.; Schmitz, J.; Stadelmann, T.; Wauro, M.; Wörl, A.; Sieck, A.; Ziegler, J.
Konferenzbeitrag
2014Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
Däubler, J.; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.
Zeitschriftenaufsatz
2014Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures
Hofstetter, D.; Bour, D.P.; Kirste, L.
Zeitschriftenaufsatz
2013AlGaN ultraviolet A and ultraviolet C photodetectors with very high specific detectivity D*
Albrecht, B.; Kopta, S.; John, O.; Kirste, L.; Driad, R.; Köhler, K.; Walther, M.; Ambacher, O.
Zeitschriftenaufsatz
2013Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations
Heidrich, N.; Knöbber, F.; Polyakov, V.M.; Cimalla, V.; Pletschen, W.; Sah, R.E.; Kirste, L.; Leopold, S.; Hampl, S.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz
2013Crystallographic texture of submicron thin aluminum nitride films on molybdenum electrode for suspended micro and nanosystems
Sah, R.E.; Kirste, L.; Kirmse, H.; Mildner, M.; Wilde, L.; Kopta, S.; Knöbber, F.; Krieg, M.; Cimalla, V.; Lebedev, V.; Ambacher, O.
Zeitschriftenaufsatz
2013Defects and noise in type-II superlattice infrared detectors
Walther, M.; Wörl, A.; Daumer, V.; Rehm, R.; Kirste, L.; Rutz, F.; Schmitz, J.
Konferenzbeitrag
2013Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65%
Waltereit, P.; Müller, S.; Kirste, L.; Prescher, M.; Storm, S.; Weber, A.; Schauwecker, B.; Hosch, M.; Splettstößer, J.
Konferenzbeitrag
2013Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and Al(x)Ga(1-x)N
Köhler, K.; Gutt, R.; Wiegert, J.; Kirste, L.
Zeitschriftenaufsatz
2013Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN
Binder, J.; Korona, K.P.; Wysmolek, A.; Kamiska, M.; Köhler, K.; Kirste, L.; Ambacher, O.; Zajac, M.; Dwilinski, R.
Zeitschriftenaufsatz
2013Enhanced mechanical performance of AlN/nanodiamond micro-resonators
Heidrich, N.; Iankov, D.; Hees, J.; Pletschen, W.; Sah, R.E.; Kirste, L.; Zuerbig, V.; Nebel, C.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz
2013Four-component superlattice empirical pseudopotential method for InAs/GaSb superlattices
Masur, J.-M.; Rehm, R.; Schmitz, J.; Kirste, L.; Walther, M.
Zeitschriftenaufsatz
2013Grain size dependent physical and chemical properties of thick CVD diamond films for high energy density physics experiments
Dawedeit, C.; Kucheyev, S.O.; Shin, S.J.; Willey, T.M.; Bagge-Hansen, M.; Braun, T.; Wang, Y.M.; El-Dasher, B.S.; Teslich, N.E.; Biener, M.M.; Ye, J.; Kirste, L.; Röhlig, C.-C.; Wolfer, M.; Wörner, E.; Buuren, A.W. van; Hamza, A.V.; Wild, C.; Biener, J.
Zeitschriftenaufsatz
2013High power efficiency AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2013InGaAs infrared detector development for SWIR imaging applications
Rutz, F.; Kleinow, P.; Aidam, R.; Bronner, W.; Kirste, L.; Walther, M.
Konferenzbeitrag
2013Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
Sah, R.E.; Driad, R.; Bernhardt, F.; Kirste, L.; Leancu, C.-C.; Czap, H.; Benkhelifa, F.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2013N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
Himmerlich, M.; Knübel, A.; Aidam, R.; Kirste, L.; Eisenhardt, A.; Krischok, S.; Pezoldt, J.; Schley, P.; Sakalauskas, E.; Goldhahn, R.; Félix, R.; Mánuel, J.M.; Morales, F.M.; Carvalho, D.; Ben, T.; García, R.; Koblmüller, G.
Zeitschriftenaufsatz
2013Nano-diamond vacuum MEMS for RF applications
Heidrich, N.; Hees, J.; Zürbig, V.; Iankov, D.; Pletschen, W.; Sah, R.E.; Raynor, B.; Kirste, L.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Konferenzbeitrag
2013Piezo-actuated tunable diamond/AlN micro lenses
Zürbig, V.; Pätz, D.; Pletschen, W.; Hees, J.; Sah, R.E.; Kirste, L.; Heidrich, N.; Cimalla, V.; Nebel, C.; Ambacher, O.; Lebedev, V.
Konferenzbeitrag
2013Piezoelectrically actuated diamond cantilevers for high-frequency applications
Heidrich, N.; Zürbig, V.; Iankov, D.; Pletschen, W.; Sah, R.E.; Raynor, B.; Kirste, L.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz
2013Transparent diamond electrodes for tunable micro-optical devices
Zürbig, V.; Pletschen, W.; Hees, J.; Sah, R.E.; Kirste, L.; Heidrich, N.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz
2012An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition
Subannajui, K.; Güder, F.; Danhof, J.; Menzel, A.; Yang, Y.; Kirste, L.; Wang, C.Y.; Cimalla, V.; Schwarz, U.; Zacharias, M.
Zeitschriftenaufsatz
2012AlGaN-based 355 nm UV light-emitting diodes with high power efficiency
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2012Diamond nanophotonics
Beha, K.; Fedder, H.; Wolfer, M.; Becker, M.C.; Siyushev. P.; Jamali, M.; Batalov, A.; Hinz, C.; Hees, J.; Kirste, L.; Obloh, H.; Gheeraert, E.; Naydenov, B.; Jakobi, I.; Dolde, F.; Pezzagna, S.; Twittchen, D.; Markham, M.; Dregely, D.; Giessen, H.; Meijer, J.; Jelezko, F.; Nebel, C.E.; Bratschitsch, R.; Leitenstorfer, A.; Wrachtrup, J.
Zeitschriftenaufsatz
2012Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2012First principle studies on molecular doping of ZnO thin films by As2O3
Sorgenfrei, T.; Bachem, K.-H.; Schneider, J.; Kirste, L.; Kunzer, M.; Fiederle, M.
Zeitschriftenaufsatz
2012GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2012Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation
Driad, R.; Schmidt, R.; Kirste, L.; Lösch, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2012Halbleiterbauelement mit einer orienterten Schicht und Verfahren zu seiner Herstellung
Kirste, Lutz; Cimalla, Volker; Aidam, R.
Patent
2012Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2012Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures
Linkohr, S.; Pletschen, W.; Polyakov, V. M.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Kirste, L.; Müller, S.; Ambacher, O.; Cimalla, V.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide
Driad, R.; Sah, R.E.; Schmidt, R.; Kirste, L.
Zeitschriftenaufsatz
2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs
Linkohr, S.; Pletschen, W.; Kirste, L.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Polyakov, V.M.; Müller, S.; Ambacher, O.; Cimalla, V.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Sputtered p-type Sb2Te3/(Bi,Sb)2Te3 soft superlattices created by nanoalloying
Winkler, M.; Liu, X.; König, J.; Kirste, L.; Böttner, H.; Bensch, W.; Kienle, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy
Aidam, R.; Diwo, E.; Rollbühler, N.; Kirste, L.; Benkhelifa, F.
Zeitschriftenaufsatz
2012Substrate removal of dual-colour InAs/GaSb superlattice focal plane arrays
Rehm, R.; Walther, M.; Schmitz, J.; Wauro, M.; Luppold, W.; Niemasz, J.; Rutz, F.; Wörl, A.; Masur, J.-M.; Kirste, L.; Scheibner, R.; Wendler, J.; Ziegler, J.
Zeitschriftenaufsatz
2012Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
Manuel, J.M.; Morales, F.M.; Garcia, R.; Aidam, R.; Kirste, L.; Ambacher, O.
Zeitschriftenaufsatz
2011Absorption and emission properties of light emitting diode structures containing GaInN/GaN QWs
Binder, J.; Korona, K.P.; Borysiuk, J.; Wysmolek, A.; Baeumler, M.; Köhler, K.; Kirste, L.
Zeitschriftenaufsatz
2011AlN based microgenerators for powering implantable sensor devices
Bludau, O.; Röhlig, C.-C.; Knöbber, F.; Kirste, L.; Sah, R.E.; Driad, R.; Pletschen, W.; Lebedev, V.; Cimalla, V.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Atomic layer deposition of aluminum oxide for surface passivation of InGaAs/InP heterojunction bipolar transistors
Driad, R.; Benkhelifa, F.; Kirste, L.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2011Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors
Gutt, R.; Himmerlich, M.; Fenske, M.; Müller, S.; Lim, T.; Kirste, L.; Waltereit, P.; Köhler, K.; Krischok, S.; Fladung, T.
Zeitschriftenaufsatz
2011Controlling the Mg doping profile in MOVPE-grown GaN/Al(0.2)Ga(0.8)N light-emitting diodes
Gutt, R.; Köhler, K.; Wiegert, J.; Kirste, L.; Passow, T.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Current developments for type-II superlattice imaging systems
Rutz, F.; Rehm, R.; Walther, M.; Kirste, L.; Masur, J.-M.; Wörl, A.; Schmitz, J.; Wauro, M.; Niemasz, J.; Scheibner, R.; Ziegler, J.
Konferenzbeitrag
2011Defect density reduction in InAs/GaSb type II superlattice focal plane array infrared detectors
Walther, M.; Rehm, R.; Schmitz, J.; Niemasz, J.; Rutz, F.; Wörl, A.; Kirste, L.; Scheibner, R.; Wendler, J.; Ziegler, J.
Konferenzbeitrag
2011Dual-color InAs/GaSb superlattice infrared imagers
Rehm, R.; Walther, M.; Rutz, F.; Schmitz, J.; Luppold, W.; Wauro, M.; Niemasz, J.; Wörl, A.; Masur, J.-M.; Kirste, L.; Scheibner, R.; Ziegler, J.
Konferenzbeitrag
2011Dynamic characterization of thin aluminum nitride microstructures
Knöbber, F.; Bludau, O.; Röhlig, C.-C.; Sah, R.E.; Williams, O.A.; Kirste, L.; Leopold, S.; Pätz, D.; Cimalla, V.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2011Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
Köhler, K.; Müller, S.; Waltereit, P.; Pletschen, W.; Polyakov, V.M.; Lim, T.; Kirste, L.; Menner, H.; Brueckner, P.; Ambacher, O.; Buchheim, C.; Goldhahn, R.
Zeitschriftenaufsatz
2011Electron and hole accumulation in InN/InGaN heterostructures
Lebedev, V.; Polyakov, V.M.; Knübel, A.; Aidam, R.; Kirste, L.; Cimalla, V.; Granzner, R.; Schwierz, F.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Growth and characterization of InAlN layers nearly lattice-matched to GaN
Mánuel, J.M.; Morales, F.M.; Lozano, J.G.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Growth mechanism and electronic properties of epitaxial In(2)O(3) films on sapphire
Wang, C.Y.; Kirste, L.; Morales, F.M.; Mánuel, J.M.; Röhlig, C.-C.; Köhler, K.; Cimalla, V.; García, R.; Ambacher, O.
Zeitschriftenaufsatz
2011Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers
Kunzer, M.; Gutt, R.; Kirste, L.; Passow, T.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs
Mánuel, J.M.; Morales, F.M.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
Zeitschriftenaufsatz
2011InAs/GaSb superlattice technology
Rutz, F.; Rehm, R.; Walther, M.; Schmitz, J.; Kirste, L.; Wörl, A.; Masur, J.-M.; Schreibner, R.; Ziegler, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Low-temperature grown high-quality piezoelectric AIN Film for sensor application
Sah, R.E.; Bludau, O.; Röhlig, C.-C.; Kirste, L.; Cimalla, V.; Lebedev, V.
Konferenzbeitrag
2011Metamorphic Te-doped Al(0.4)In(0.6)Sb/Ga(0.4)In(0.6)Sb HEMT structures for low power and high frequency applications
Lösch, R.; Aidam, R.; Kirste, L.; Leuther, A.
Konferenzbeitrag
2011Metamorphic Te-doped Al 0.4In 0.6Sb/Ga 0.4In 0.6Sb HEMT structures for low power and high frequency applications
Loesch, R.; Aidam, R.; Kirste, L.; Leuther, A.
Konferenzbeitrag
2011Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications
Lösch, R.; Aidam, R.; Kirste, L.; Leuther, A.
Zeitschriftenaufsatz
2011Quaternary barriers for improved performance of GaN-based HEMTs
Lim, T.; Aidam, R.; Waltereit, P.; Pletschen, W.; Quay, R.; Kirste, L.; Ambacher, O.
Zeitschriftenaufsatz
2011Reactor dependent starting transients of doping profiles in MOVPE grown GaN
Köhler, K.; Gutt, R.; Müller, S.; Wiegert, J.; Menner, H.; Kirste, L.; Protzmann, H.; Heuken, M.
Zeitschriftenaufsatz
2011Surface passivation of InGaAs/InP HBTs using atomic layer deposited Al(2)O(3)
Driad, R.; Benkhelifa, F.; Kirste, L.; Lösch, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2011Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
Rogowsky, S.; Baeumler, M.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Stolz, W.; Volz, K.; Kunert, B.
Zeitschriftenaufsatz
2010AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Zeitschriftenaufsatz
2010Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures
Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Müller, S.; Ambacher, O.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Diamond/AlN thin films for optical applications
Knöbber, F.; Bludau, O.; Williams, O.A.; Sah, R.E.; Kirste, L.; Baeumler, M.; Leopold, S.; Pätz, D.; Nebel, C.E.; Ambacher, O.; Cimalla, V.; Lebedev, V.
Konferenzbeitrag
2010Doping of single crystalline diamond with nickel
Wolfer, M.; Obloh, H.; Williams, O.A.; Leancu, C.-C.; Kirste, L.; Gheeraert, E.; Nebel, C.E.
Zeitschriftenaufsatz
2010GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O.
Zeitschriftenaufsatz
2010InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors
Walther, M.; Rehm, R.; Schmitz, J.; Fleissner, J.; Rutz, F.; Kirste, L.; Scheibner, R.; Wendler, J.; Ziegler, J.
Konferenzbeitrag
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Zeitschriftenaufsatz
2010Investigation of stress in AIN thin films for piezoelectric MEMS
Sah, R.E.; Kirste, Lutz; Baeumler, Martina; Hiesinger, P.; Cimalla, Volker; Lebedev, Vadim; Knöbber, F.; Bludau, O.; Röhlig, C.-C.; Baumann, H.
Konferenzbeitrag
2010Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling
Knübel, A.; Polyakov, V.M.; Kirste, L.; Aidam, R.
Zeitschriftenaufsatz
2010Optical investigation of the BGaP/GaP/Si material system
Baeumler, M.; Rogowsky, S.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Kunert, B.; Stolz, W.
Konferenzbeitrag
2010Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Gutt, R.; Kirste, L.; Passow, T.; Kunzer, M.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
Aidam, R.; Waltereit, P.; Kirste, L.; Dammann, M.; Quay, R.
Zeitschriftenaufsatz
2010Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering
Sah, R.E.; Kirste, L.; Baeumler, M.; Hiesinger, P.; Cimalla, V.; Lebedev, V.; Baumann, H.; Zschau, H.-E.
Zeitschriftenaufsatz
2010Size-dependent reactivity of diamond nanoparticles
Williams, O.A.; Hees, J.J.; Dieker, C.; Jäger, W.; Kirste, L.; Nebel, C.E.
Zeitschriftenaufsatz
2010Sputtered n-type soft super lattice thermoelectric layers based on Bi2Te3/(Bi,Sb)2Te3 created by nanoalloying
Winkler, M.; Ebling, D.; Böttner, H.; Kirste, L.
Konferenzbeitrag
2010Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
Manuel, J.M.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
Zeitschriftenaufsatz
2010Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures
Kirste, L.; Lim, T.; Aidam, R.; Müller, S.; Waltereit, P.; Ambacher, O.
Zeitschriftenaufsatz
2009Determination of surface potential of GaN:Si
Köhler, K.; Maier, M.; Kirste, L.; Wiegert, J.; Menner, H.
Zeitschriftenaufsatz, Konferenzbeitrag
2009Growth and electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content
Köhler, K.; Müller, S.; Waltereit, P.; Kirste, L.; Menner, H.; Bronner, W.; Quay, R.
Zeitschriftenaufsatz
2009Halbleiterstruktur
Lim, T.; Aidam, R.; Kirste, L.; Quay, R.
Patent
2009Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
Waltereit, P.; Müller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; Köhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O.
Zeitschriftenaufsatz
2009Influence of group IV-Te alloying on nanocomposite structure and thermoelectric properties of Bi2Te3 compounds
Ebling, D.G.; Jacquot, A.; Böttner, H.; Kirste, L.; Schmidt, J.; Aguirre, M.
Zeitschriftenaufsatz
2009Optical and mass spectrometric investigation of the interaction of hydrogen with nitrogen In (In)GaAsN layers
Alt, H.C.; Messerer, P.; Köhler, K.; Riechert, H.; Kirste, L.
Konferenzbeitrag
2009Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J.
Zeitschriftenaufsatz
2009Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study
Bläsing, J.; Krost, A.; Hertkorn, J.; Scholz, F.; Kirste, L.; Chuvilin, A.; Kaiser, U.
Zeitschriftenaufsatz
2009Piezoelectrically actuated AlN and Nanodiamond microstructures
Knöbber, F.; Sillero, E.; Röhlig, C.-C.; Williams, O.A.; Sah, R.E.; Kirste, L.; Cimalla, V.; Nebel, C.E.; Calle, F.; Lebedev, V.
Konferenzbeitrag
2009Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K.
Zeitschriftenaufsatz, Konferenzbeitrag
2009Reduced non-thermal roll-over in violet-emitting GaInN wide-well LEDs grown on low-dislocation-density substrates
Maier, M.; Passow, T.; Kunzer, M.; Schirmacher, W.; Pletschen, W.; Kirste, L.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2009Reduction of the threading edge disclocation density in AlGaN epilayers by GaN nucleation
Gutt, R.; Kirste, L.; Wiegert, J.; Luick, D.; Köhler, K.
Konferenzbeitrag
2009Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)
Knübel, A.; Aidam, R.; Cimalla, V.; Kirste, L.; Baeumler, M.; Leancu, C.-C.; Lebedev, V.; Wallauer, J.; Walther, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2008Growth of thick films CdTe from the vapor phase
Sorgenfrei, R.; Greiffenberg, D.; Bachem, K.H.; Kirste, L.; Zwerger, A.; Fiederle, M.
Zeitschriftenaufsatz
2008Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P.
Zeitschriftenaufsatz
2008SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Kirste, L.; Köhler, K.; Maier, M.; Kunzer, M.; Maier, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2008The surface potential of GaN:Si
Köhler, K.; Wiegert, J.; Menner, H.P.; Maier, M.; Kirste, L.
Zeitschriftenaufsatz
2007Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasers
Manz, C.; Yang, Q.K.; Kirste, L.; Köhler, K.
Konferenzbeitrag, Zeitschriftenaufsatz
2007Structural and mechanical properties of spark plasma sintered n- and p-type bismuth telluride alloys
Böttner, H.; Ebling, D.G.; Jacquot, A.; König, J.; Kirste, L.; Schmidt, J.
Zeitschriftenaufsatz
2007Structural investigations of epitaxial InN by x-ray photoelectron diffraction and x-ray diffraction
Hofstetter, D.; Despont, L.; Garnier, M.G.; Baumann, E.; Giorgetta, F.R.; Aebi, P.; Kirste, L.; Lu, H.; Schaff, W.J.
Zeitschriftenaufsatz
2007Structure and thermoelectric properties of nanocomposite bismuth telluride prepared by melt spinning or by partially alloying with IV-VI compounds
Ebling, D.G.; Jacquot, A.; Jägle, M.; Böttner, H.; Kühn, U.; Kirste, L.
Zeitschriftenaufsatz
2007Wide angle X-ray dynamical diffraction by deformed crystals: Recurrence relations
Pavlov, K.M.; Paganin, D.M.; Vine, D.J.; Kirste, L.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Molecular beam epitaxy and doping of AlN at high growth temperatures
Boger, R.; Fiederle, M.; Kirste, L.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
2006Near infrared absorption and room temperature photovoltaic response in AIN/GaN superlattices grown by metal-organic vapor-phase epitaxy
Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Golka, S.; Schrenk, W.; Strasser, G.; Kirste, L.; Nicolay, S.; Feltin, E.; Carlin, J.F.; Grandjean, N.
Zeitschriftenaufsatz
2006Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Zeitschriftenaufsatz, Konferenzbeitrag
2005Analysis of the mosaic structure of an ordered (Al,Ga)N layer
Kirste, L.; Pavlov, K.M.; Mudie, S.T.; Punegov, V.I.; Herres, N.
Zeitschriftenaufsatz
2005Chemically ordered Al(x)Ga(1-x)N alloys: Spontaneous formation of natural quantum wells
Albrecht, M.; Lymperakis, L.; Neugebauer, J.; Northrup, J.E.; Kirste, L.; Leroux, M.; Grzegory, I.; Porowski, S.; Strunk, H.P.
Zeitschriftenaufsatz
2005GaInAs/AlAsSb quantum-cascade lasers operating up to 400 K
Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Kirste, L.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2005GaInAs/AlGaAsSb quantum-cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Kirste, L.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2005Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L.
Zeitschriftenaufsatz
2005High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
Manz, C.; Yang, Q.K.; Köhler, K.; Maier, M.; Kirste, L.; Wagner, J.; Send, W.; Gerthsen, D.
Zeitschriftenaufsatz
2005Resonant tunnelling and intersubband absorption in AlN - GaN superlattices
Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Wu, H.; Schaff, W.J.; Eastman, L.F.; Kirste, L.
Zeitschriftenaufsatz
2005Tunneling effects and intersubband absorption in AlN/GaN superlattices
Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Wu, H.; Schaff, J.; Eastman, L.F.; Kirste, L.
Zeitschriftenaufsatz
2004Epitaxy and characterisation of dilute III-As(1-y)N(y) on GaAs and InP
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, M.; Kirste, L.
Konferenzbeitrag, Zeitschriftenaufsatz
2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.
Konferenzbeitrag
2004The realization of long-wavelength (lambda <= 2.3 µm) Ga(1-x)In(x)As(1-y)N(y) quantum wells on InP by molecular-beam epitaxy
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, T.; Kirste, L.
Zeitschriftenaufsatz
2002X-Ray determination of the composition of partially strained group-III nitride layers using the extended bond method
Herres, N.; Kirste, L.; Obloh, H.; Köhler, K.; Wagner, J.; Koidl, P.
Zeitschriftenaufsatz