Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Rosshirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar
Konferenzbeitrag
2017Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar
Poster
2017Optical stressing of 4H-SiC material and devices
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen
Poster
2016Imaging defect luminescence of 4H-SiC by ultraviolet-photoluminescence
Berwian, Patrick; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Konferenzbeitrag
2016Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Konferenzbeitrag
2015Defect Luminescence Scanner (DLS): Scientific and industrial-scale defect analysis
Oppel, Steffen; Schneider, Adrian; Schütz, Michael; Kaminzky, Daniel; Kallinger, Birgit; Weber, Jonas; Krieger, Michael
Vortrag
2015Imaging defect luminescence measurements of 4H-SiC by UV-PL
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Vortrag
2015Imaging defect luminescence of 4H-SiC by UV-photoluminescence
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Vortrag
2015Improvement of 4H-SiC material quality
Kallinger, Birgit; Kaminzky, Daniel; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen
Vortrag
2015Influence of growth temperature on the defect density for 4H-SiC homoepitaxy
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen
Poster
2015Modelling of effective minority carrier lifetimes in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Poster
2015Quality control of SiC materials by optical detection of defects
Kallinger, Birgit; Kaminzky, Daniel; Roßhirt, Katharina; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen
Vortrag
2014Defektlumineszenz in 4H-SiC
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schütz, Michael
Vortrag
2014New Defect Luminescence Scanner for Inline Control of Material Quality
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Oppel, Steffen; Schütz, Michael; Schneider, Adrian; Krieger, Michael; Weber, Jonas; Friedrich, Jochen
Poster