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| 2020 | Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping
Kocher, Matthias; Schlichting, Holger; Kallinger, Birgit; Rommel, Matthias; Bauer, Anton J.; Erlbacher, Tobias | Konferenzbeitrag |
| 2019 | Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by using PL scanning
Kocher, Matthias; Schlichting, Holger; Kallinger, Birgit; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias | Poster |
| 2019 | Lifetime engineering in 4H-SiC materials and devices
Rommel, Mathias; Erlekampf, Jürgen; Kallinger, Birgit; Weiße, Julietta; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias | Vortrag |
| 2018 | Defects and carrier lifetime in 4H-Silicon Carbide
Kallinger, Birgit; Erlekampf, Jürgen; Rommel, Mathias; Berwian, Patrick; Friedrich, J.; Matthus, Christian D. | Vortrag |
| 2018 | Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Rosshirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar | Konferenzbeitrag |
| 2018 | Influence of substrate properties on the defectivity and minority carrier lifetime in 4H-SiC homoepitaxial layers
Kallinger, Birgit; Erlekampf, Jürgen; Roßhirt, Katharina; Berwian, Patrick; Stockmeier, Matthias; Vogel, Michael; Hens, Philip; Wischmeyer, Frank | Vortrag |
| 2018 | Principle of lifetime-engineering in 4H-SiC by ion implantation
Erlekampf, Jürgen; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen; Frey, Lothar; Erlbacher, Tobias | Poster |
| 2017 | Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar | Poster |
| 2017 | Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J. | Poster |
| 2017 | Optical stressing of 4H-SiC material and devices
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen | Poster |
| 2016 | Imaging defect luminescence of 4H-SiC by ultraviolet-photoluminescence
Berwian, Patrick; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael | Konferenzbeitrag |
| 2016 | Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen | Konferenzbeitrag |
| 2015 | Defect Luminescence Scanner (DLS): Scientific and industrial-scale defect analysis
Oppel, Steffen; Schneider, Adrian; Schütz, Michael; Kaminzky, Daniel; Kallinger, Birgit; Weber, Jonas; Krieger, Michael | Vortrag |
| 2015 | Imaging defect luminescence measurements of 4H-SiC by UV-PL
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael | Vortrag |
| 2015 | Imaging defect luminescence of 4H-SiC by UV-photoluminescence
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael | Vortrag |
| 2015 | Improvement of 4H-SiC material quality
Kallinger, Birgit; Kaminzky, Daniel; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen | Vortrag |
| 2015 | Influence of growth temperature on the defect density for 4H-SiC homoepitaxy
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen | Poster |
| 2015 | Modelling of effective minority carrier lifetimes in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen | Poster |
| 2015 | Quality control of SiC materials by optical detection of defects
Kallinger, Birgit; Kaminzky, Daniel; Roßhirt, Katharina; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen | Vortrag |
| 2015 | Thermal simulation of paralleled SiC PiN diodes in a module designed for 6.5 kV/1 kA
Bayer, Christoph Friedrich; Bär, Eberhard; Kallinger, Birgit; Berwian, Patrick | Konferenzbeitrag |
| 2014 | Comparison of carrier lifetime measurements and mapping in 4H SiC using time resolved photoluminescence and μ-PCD
Kallinger, Birgit; Rommel, Mathias; Lilja, Louise; Hassan, Jawad ul; Booker, Ian; Janzen, Erik; Bergman, Peder | Konferenzbeitrag |
| 2014 | Defektlumineszenz in 4H-SiC
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schütz, Michael | Vortrag |
| 2014 | HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen | Konferenzbeitrag |
| 2014 | New Defect Luminescence Scanner for Inline Control of Material Quality
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Oppel, Steffen; Schütz, Michael; Schneider, Adrian; Krieger, Michael; Weber, Jonas; Friedrich, Jochen | Poster |
| 2014 | Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Friedrich, Jochen; Rommel, Mathias | Vortrag |
| 2013 | Comparison of carrier lifetime measurements and mapping using time resolved photoluminescence and µ-PCD
Kallinger, Birgit; Rommel, Mathias; Lilja, L.; Hassan, J.; Booker, Ian; Janzen, Erik; Bergman, J.P. | Poster |
| 2013 | Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friedrich, Jochen; Danilewsky, A.N. | Zeitschriftenaufsatz |
| 2013 | Fehlpassung bei der Homo- und Heteroepitaxie
Kallinger, Birgit | Vortrag |
| 2013 | HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen | Poster |
| 2013 | Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter | Konferenzbeitrag |
| 2013 | Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Thomas, Bernd | Zeitschriftenaufsatz |
| 2013 | SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd | Konferenzbeitrag |
| 2012 | Analysis of threading dislocations in 4H-SiC by defect selective etching and X-ray topography
Kallinger, Birgit; Berwian, P.; Friedrich, J.; Danilewsky, A.; Wehrhahn, A.; Weber, A.-D. | Vortrag |
| 2012 | Doping induced lattice misfit in 4H-SiC homoepitaxy
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Müller, Georg; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann; Thomas, Bernd | Zeitschriftenaufsatz |
| 2012 | Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter | Poster |
| 2012 | Ohmic and rectifying contacts on bulk AlN for radiation detector applications
Erlbacher, Tobias; Bickermann, Matthias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J.; Frey, Lothar | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2012 | SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd | Poster |
| 2011 | Homoepitaxial growth and defect characterization of 4H-SiC epilayers
Kallinger, Birgit; Thomas, Bernd; Berwian, Patrick; Friedrich, Jochen; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann | Vortrag |
| 2011 | Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)
Kallinger, Birgit | Dissertation |