Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1  μm
Stevenson, N.K.; Brown, C.T.A.; Hopkins, J.-M.; Dawson, M.D.; Kränkel, C.; Lagatsky, A.A.
Zeitschriftenaufsatz
2018Ultrafast diode-pumped Ti:sapphire laser with broad tunability
Coyle, J.C.E.; Kemp, A.J.; Hopkins, J.-M.; Lagatsky, A.A.
Zeitschriftenaufsatz
20171.9 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu2O3 ceramic
Morris, J.; Stevenson, N.K.; Bookey, H.T.; Kar, A.K.; Brown, C.T.A.; Hopkins, J.-M.; Dawson, M.D.; Lagatsky, A.A.
Zeitschriftenaufsatz
2017A broadly tunable ultrafast diode-pumped Ti:sapphire laser
Coyle, J.C.E.; Kemp, A.J.; Hopkins, J.-M.; Lagatsky, A.A.
Konferenzbeitrag
2017Waveguide Tm:Lu2O3 ceramic laser fabricated by ultrafast laser inscription
Stevenson, N.K.; Morris, J.; Bookey, H.; Kar, A.K.; Brown, C.T.A.; Hopkins, J.-M.; Dawson, M.D.; Lagatsky, A.A.
Konferenzbeitrag
2016Diode-pumped femtosecond Tm-doped Lu2O3 ceramic laser
Lagatsky, A.A.; Hopkins, J.-M.
Konferenzbeitrag
2015Low-repetition-rate (112 MHz) high-peak-power modelocked semiconductor disk laser in a multipass cavity geometry
McKnight, L.J.; Schlosser, P.J.; Lagatsky, A.A.; Dawson, M.D.; Hopkins, J.-M.
Konferenzbeitrag
2015Tm:YAP pumped intracavity pulsed OPO based on orientation-patterned gallium arsenide (OP-GaAs)
Kane, D.; Hopkins, J.-M.; Dunn, M.H.; Schunemann, P.G.; Stothard, D.J.M.
Konferenzbeitrag
2014Improved laser ablation model for asteroid deflection
Vasile, M.; Gibbings, A.; Watson, I.; Hopkins, J.-M.
Zeitschriftenaufsatz
2013Current challenges for high-power semiconductor disk lasers
McKnight, L.J.; Bennett, T.E.; Kane, D.J.; Hamilton, C.J.; Malcolm, G.P.A.; Stothard, D.J.M.; Hopkins, J.-M.; Dawson, M.D.
Konferenzbeitrag
201020W, quasi-cw GaSb-based semiconductor disk laser
Hempler, N.; Hopkins, J.-M.; Kemp, A.; Rösener, B.; Rattunde, M.; Wagner, J.; Burns, D.
Konferenzbeitrag
2010Long-wavelength GaSb disk lasers
Rösener, B.; Rattunde, M.; Hopkins, J.-M.; Burns, D.; Wagner, J.
Aufsatz in Buch
2010Toward 3 micron wavelength semiconductor disk lasers
Rösener, B.; Rattunde, M.; Manz, C.; Wagner, J.; Hopkins, J.-M.; Burns, D.; Scholle, K.
Zeitschriftenaufsatz
2009Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
Rattunde, M.; Rösener, B.; Hempler, N.; Hopkins, J.-M.; Burns, D.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2009Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J.
Konferenzbeitrag
2009Semiconductor disk laser pumped Cr2+:Znse lasers
Hempler, N.; Hopkins, J.-M.; Rösener, B.; Rattunde, M.; Wagner, J.; Fedorov, V.V.; Moskalev, I.S.; Mirov, S.B.; Burns, D.
Zeitschriftenaufsatz
2009Tuning and brightness optimization of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm
Hempler, N.; Hopkins, J.-M.; Rattunde, M.; Rösener, B.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Konferenzbeitrag
20085W Mid-IR optically-pumped semiconductor disk laser
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Konferenzbeitrag
2008High-brightness long-wavelength semiconductor disk lasers
Schulz, N.; Hopkins, J.-M.; Rattunde, M.; Burns, D.; Wagner, J.
Zeitschriftenaufsatz
2008High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range
Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.
Konferenzbeitrag
2008High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Zeitschriftenaufsatz
2008Semiconductor disk laser pumped Cr2+:chalcogenide lasers
Hempler, N.; Hopkins, J.-M.; Rösener, B.; Schulz, N.; Rattunde, M.; Wagner, J.; Roy, U.N.; Burger, A.; Burns, D.
Konferenzbeitrag
2008Thermal management in 2.3-mu m semiconductor disk lasers: A finite element analysis
Kemp, A.J.; Hopkins, J.-M.; Maclean, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Burns, D.
Zeitschriftenaufsatz
2008Two-micron semiconductor disk lasers achieve higher powers
Rattunde, M.; Rösener, B.; Schulz, N.; Manz, C.; Hopkins, J.-M.; Burns, D.; Wagner, J.
Zeitschriftenaufsatz
2007High-power, high-brightness, tunable GaSb-based VECSEL at 2.X µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Kemp, A.J.; Maclean, A.J.; Dawson, M.D.; Burns, D.
Konferenzbeitrag
2007Pulsed pumping of a 2.3m InGaAsSb semiconductor disk laser
Hempler, N.; Hopkins, J.-M.; Kemp, A.; Dawson, M.; Burns, D.; Shultz, N.; Rattunde, M.; Wagner, J.
Konferenzbeitrag
2007Pulsed pumping of semiconductor disk lasers
Hempler, N.; Hopkins, J.-M.; Kemp, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Dawson, M.D.; Burns, D.
Zeitschriftenaufsatz
2007Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regime
Schulz, N.; Rattunde, M.; Manz, C.; Kohler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.
Konferenzbeitrag
2007Tunable, single-frequency, diode-pumped 2.3 µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Riis, E.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
2006Tunable, single-frequency, diode-pumped 2.3µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Konferenzbeitrag