Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Investigation of stress in AIN thin films for piezoelectric MEMS
Sah, R.E.; Kirste, Lutz; Baeumler, Martina; Hiesinger, P.; Cimalla, Volker; Lebedev, Vadim; Knöbber, F.; Bludau, O.; Röhlig, C.-C.; Baumann, H.
Konferenzbeitrag
2010Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering
Sah, R.E.; Kirste, L.; Baeumler, M.; Hiesinger, P.; Cimalla, V.; Lebedev, V.; Baumann, H.; Zschau, H.-E.
Zeitschriftenaufsatz
2000Analysis of peculiar structural defects created in GaAs by diffusion of copper
Frigeri, C.; Weyher, J.; Müller, S.; Hiesinger, P.
Zeitschriftenaufsatz
1999Contactless mapping of mesoscopic resistivity variations in semi-insulating substrates
Stibal, R.; Wickert, M.; Hiesinger, P.; Jantz, W.
Zeitschriftenaufsatz
1999High resolution EL2 and resistivity topography of Si GaAs wafers
Wickert, M.; Stibal, R.; Hiesinger, P.; Jantz, W.; Wagner, J.; Jurisch, M.; Kretzer, U.; Weinert, B.
Konferenzbeitrag
1999A study of defects in LEC GaAs after copper diffusion
Frigeri, C.; Weyher, J.L.; Müller, S.; Hiesinger, P.
Konferenzbeitrag
1995Boron doped diamond films: electrical and optical characterization and the effect of compensating nitrogen
Locher, R.; Wagner, J.; Fuchs, F.; Wild, C.; Hiesinger, P.; Gonon, P.; Koidl, P.
Zeitschriftenaufsatz
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1994Effect on non-ideal delta doping layers in Al0.3Ga0.7As/In0.3Ga0.7As pseudomorphic heterostructures
Fernandez de Avila, S.; Sanchez-Rojas, J.L.; Hiesinger, P.; Gonzalez-Sanz, F.; Calleja, E.; Köhler, K.; Jantz, W.; Munoz, E.
Konferenzbeitrag
1994Improved structural and transport properties of MBE-grown InAs/AlSb QW's with residual As incorporation eliminated via valved cracker
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Hiesinger, P.; Koidl, P.; Ralston, J.D.
Konferenzbeitrag
1994Influence of delta doping profile and interface roughness on the transport properties of pseudomorphic heterostructures.
Fernandez de Avila, S.; Sanchez-Rojas, J.L.; Gonzalez-Sanz, F.; Calleja, E.; Munoz, E.; Hiesinger, P.; Köhler, K.; Jantz, W.
Zeitschriftenaufsatz
1993Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping.
Ramsteiner, M.; Hiesinger, P.; Köhler, K.; Rössler, U.; Wagner, J.
Zeitschriftenaufsatz
1992Anisotropic electrical conduction in GaAs/In 0.2 Ga 0.8 As/Al 0.3 Ga 0.7 As strained heterostructures beyond the critical layer thickness.
Hiesinger, P.; Schweizer, T.; Rothemund, W.; Ganser, P.; Jantz, W.; Köhler, K.
Zeitschriftenaufsatz
1992Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Schweizer, T.; Köhler, K.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1991Influence of Si segregation on the two-dimensional electron gas mobility of inverted HEMT structures.
Hiesinger, P.; Jantz, W.; Köhler, K.; Maier, M.
Zeitschriftenaufsatz
1991Low temperature infrared measurements and photo-induced persistent changes of intersubband transitions in GaAs/AlGaAs multiple quantum wells
Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ralston, J.D.; Ramsteiner, M.
Konferenzbeitrag
1991Overgrowth and strain in MBE-grown GaAs/ErAs/GaAs structures.
Hiesinger, P.; Schmälzlin, J.; Fuchs, F.; Ralston, J.D.; Wagner, J.
Zeitschriftenaufsatz
1990Effects of Si incorporation and electrical activation of intersubband optical absorption in MBE-grown GaAs/AlGaAs multiple quantum well structures
Ralston, J.D.; Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ramsteiner, M.; Ennen, H.
Konferenzbeitrag
1990Elektrische und optische Eigenschaften von ErAs und ErAs/GaAs Vielfachschichten hergestellt mit MBE auf GaAs
Ralston, J.D.; Fuchs, F.; Hiesinger, P.; Schneider, J.; Herres, N.; Ennen, H.; Wennekers, P.
Konferenzbeitrag
1990Structural, electrical and optical characterization of single-crystal ErAs layers grown on GaAs by MBE.
Ralston, J.D.; Hiesinger, P.; Schneider, J.; Müller, H.D.; Rothemund, W.; Fuchs, F.; Schmälzlin, J.; Thonke, K.; Herres, N.; Ennen, H.; Wennekers, P.
Zeitschriftenaufsatz