Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2006Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Zeitschriftenaufsatz, Konferenzbeitrag
2005Analysis of the mosaic structure of an ordered (Al,Ga)N layer
Kirste, L.; Pavlov, K.M.; Mudie, S.T.; Punegov, V.I.; Herres, N.
Zeitschriftenaufsatz
2004X-ray fingerprinting routine for cut diamonds
Diehl, R.; Herres, N.
Zeitschriftenaufsatz
2003Gas sensitive behavior and morphology of reactive evaporated V2O5 thin-films
Wöllenstein, J.; Scheulin, M.; Herres, N.; Becker, W.J.; Bottner, H.
Zeitschriftenaufsatz
2003Gas sensitive behaviour and morphology of reactive evaporated V2O5 thin films
Wöllenstein, J.; Scheulin, M.; Herres, N.; Becker, W.J.; Böttner, H.
Zeitschriftenaufsatz
2003SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP
Maier, M.; Serries, D.; Geppert, T.; Köhler, K.; Güllich, H.; Herres, N.
Zeitschriftenaufsatz
20022K PL topography of silicon doped VGf-GaAs wafers
Baeumler, M.; Maier, M.; Herres, N.; Bünger, T.; Stenzenberger, J.; Jantz, W.
Zeitschriftenaufsatz
2002Band-edge aligned quaternary carrier barriers in InGaAs-AlGaAs high-power diode lasers for improved high-temperature operation
Wiedmann, N.; Schmitz, J.; Boucke, K.; Herres, N.; Wagner, J.; Mikulla, M.; Poprawe, R.; Weimann, G.
Zeitschriftenaufsatz
2002Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.
Zeitschriftenaufsatz
2002X-Ray determination of the composition of partially strained group-III nitride layers using the extended bond method
Herres, N.; Kirste, L.; Obloh, H.; Köhler, K.; Wagner, J.; Koidl, P.
Zeitschriftenaufsatz
2001Growth and layer structure optimization of 2.26 µm (AlGaIn)(AsSb) diode lasers for room temperature operation
Simanowski, S.; Mermelstein, C.; Walther, M.; Herres, N.; Kiefer, R.; Rattunde, M.; Schmitz, J.; Wagner, J.; Weimann, G.
Zeitschriftenaufsatz
2001Internal stresses and lifetime evaluation of PECVD isolating layers
Dommann, A.; Herres, N.; Krink, M.; Galiano, J.J.; Stämpfli, B.
Zeitschriftenaufsatz
2001N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Herres, N.
Zeitschriftenaufsatz
2001Optoelectronic properties of Photodiodes for the mid- and far-infrared based on the InAs/GaSB/AlSb materials family
Fuchs, F.; Bürkle, L.; Hamid, R.; Herres, N.; Pletschen, W.; Sah, R.E.; Kiefer, R.; Schmitz, J.
Konferenzbeitrag
2001Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
Rattunde, M.; Mermelstein, C.; Simanowski, S.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Walther, M.; Wagner, J.
Konferenzbeitrag
2000GaAsN interband transitions involving localized and extended states probed by resonant Raman scattering and spectrosopic ellipsometry
Wagner, J.; Köhler, K.; Ganser, P.; Herres, N.
Zeitschriftenaufsatz
2000Growth of metastable GaAsSb for InP-based type-II emitters
Peter, M.; Serries, D.; Herres, N.; Fuchs, F.; Kiefer, R.; Winkler, K.; Bachem, K.-H.; Wagner, J.
Konferenzbeitrag
2000Raman and dielectric function spectra of strained GaAs(1-x)Sb(x) layers on InP
Serries, D.; Peter, M.; Herres, N.; Winkler, K.; Wagner, J.
Zeitschriftenaufsatz
2000The refractive index of Al(x)Ga(1-x)As below the band gap: Accurate determination and empirical modeling
Gehrsitz, S.; Reinhart, F.K.; Gourgon, C.; Herres, N.; Vonlanthan, A.; Sigg, H.
Zeitschriftenaufsatz
2000Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3.-2.7. µm laser structures
Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G.
Zeitschriftenaufsatz
1999Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mu m laser structures on GaSb substrates
Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G.
Zeitschriftenaufsatz
1999Band gaps and band offsets in strained GaAs(1-y)Sb(y) on InP grown by metalorganic chemical vapor deposition
Peter, M.; Herres, N.; Fuchs, F.; Winkler, K.; Bachem, K.H.; Wagner, J.
Zeitschriftenaufsatz
1999Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U.
Zeitschriftenaufsatz
1999Composition dependence of the band gap energy of In(x)Ga(1-x)N layers on GaN(x < = 0.15) grown by metal-organic chemical vapor deposition
Wagner, J.; Ramakrishnan, A.; Behr, D.; Maier, M.; Herres, N.; Kunzer, M.; Obloh, H.; Bachem, K.H.
Konferenzbeitrag
1999Compositional dependence of the elastic constants and the lattice parameter of Al(x)Ga(1-x)As
Gehrsitz, S.; Sigg, H.; Herres, N.; Bachem, K.; Köhler, K.; Reinhart, F.K.
Zeitschriftenaufsatz
1999InAs/Ga(1-x)In(x)Sb infrared superlattice diodes. Correlation between surface morphology and electrical performance
Fuchs, F.; Bürkle, L.; Pletschen, W.; Schmitz, J.; Walther, M.; Güllich, H.; Herres, N.; Müller, S.
Konferenzbeitrag
1999Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate
Peter, M.; Kiefer, R.; Fuchs, F.; Herres, N.; Winkler, K.; Bachem, K.H.; Wagner, J.
Zeitschriftenaufsatz
1999X-ray analysis of the texture of heteroepitaxial gallium nitride films
Herres, N.; Obloh, H.; Bachem, K.H.; Helmig, K.
Zeitschriftenaufsatz
199820 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy
Kiefer, R.; Lösch, R.; Walcher, H.; Walther, M.; Weisser, S.; Czotscher, K.; Benz, W.; Rosenzweig, J.; Herres, N.; Maier, M.; Manz, C.; Pletschen, W.; Braunstein, J.; Weimann, G.
Konferenzbeitrag
1998InAs/(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formation
Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Serries, D.; Grietens, B.; Nemeth, S.; Hoof, C. van; Borghs, G.
Zeitschriftenaufsatz
1998MOCVD growth of (Ga(1-x)In(x)As-GaAs(1-y)Sb(y))superlattices on InP showing type-II emission at wavelengths beyond 2 mu m
Peter, M.; Winkler, K.; Herres, N.; Fuchs, F.; Müller, S.; Bachem, K.H.; Wagner, J.
Konferenzbeitrag
1998Spectroscopic ellipsometry for characterization of InAs/Ga(1-x)In(x)Sb superlattices
Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Walther, M.
Zeitschriftenaufsatz
1997Growth and characterization of InAs/AlSb/GaSb heterostructures
Fuchs, F.; Wagner, J.; Schmitz, J.; Herres, N.; Koidl, P.
Aufsatz in Buch
1997Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide
Kawarada, H.; Wild, C.; Herres, N.; Locher, R.; Koidl, P.; Nagasawa, H.
Zeitschriftenaufsatz
1997InAs/(GaIn)Sb superlattices for infrared detection
Wagner, J.; Fuchs, F.; Schmitz, J.; Pletschen, W.; Weimar, U.; Herres, N.; Walther, M.; Koidl, P.
Konferenzbeitrag
1997InAs/AlSb/GaSb heterostructures
Wagner, J.; Schmitz, J.; Fuchs, F.; Obloh, H.; Herres, N.; Koidl, P.
Aufsatz in Buch
1997Study of composition and critical-point broadening in InAs/Ga(1-x)In(x)Sb superlattices using spectroscopic ellipsometry
Wagner, J.; Schmitz, J.; Herres, N.; Tränkle, G.; Koidl, P.
Zeitschriftenaufsatz
1996Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices
Herres, N.; Fuchs, F.; Schmitz, J.; Pavlov, K.M.; Wagner, J.; Ralston, J.D.; Koidl, P.; Gadaleta, C.; Scamarcio, G.
Zeitschriftenaufsatz
1996Structural characterization of InAs/(GaIn)Sb superlattices for IR optoelectronics
Wagner, J.; Schmitz, J.; Fuchs, F.; Weimar, U.; Herres, N.; Tränkle, G.; Koidl, P.
Konferenzbeitrag
1995Deformatio-induced ferroelectric domain pinning in chromium doped LeNbO3
Bender, G.; Meisen, S.; Herres, N.; Wild, C.; Koidl, P.
Zeitschriftenaufsatz
1995Elastic contants and Poisson ratio in the system AlAs-GaAs
Herres, N.; Köhler, K.; Krieger, M.; Sigg, H.; Bachem, K.H.
Zeitschriftenaufsatz
1995InAs/GaSb Superlattices for infrared detection: Structural characterization and optical Properties
Wagner, J.; Fuchs, F.; Herres, N.; Schmitz, J.; Koidl, P.
Aufsatz in Buch
1995Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy
Schmitz, J.; Wagner, J.; Fuchs, F.; Herres, N.; Koidl, P.; Ralston, J.D.
Zeitschriftenaufsatz
1995Raman scattering by folded longitudinal acoustic phonons in InAs/GaSb superlattices - Resonant enhancement an effect of interfacial bonding
Wagner, J.; Schmitz, J.; Herres, N.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1995Realization and modeling of a pseudomorphic (GaAs(1-x)Sb(x)-In(y)Ga(1-y)As)/GaAs bilayer-quantum well
Peter, M.; Winkler, K.; Maier, N.; Herres, N.; Wagner, J.; Fekete, D.; Bachem, K.H.; Richards, D.
Zeitschriftenaufsatz
1995X-ray curve characterization of homo-epitaxial layers on silicon deposited after DC hydrogen cleaning
Dommann, A.; Herres, N.; Deller, H.R.; Nissen, H.U.; Krüger, D.; Pixley, R.E.; Ramm, J.
Zeitschriftenaufsatz
1994MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R.
Konferenzbeitrag
1994Nitrogen stabilized 100 texture in chemical vapor deposited diamond films
Locher, R.; Wild, C.; Herres, N.; Behr, D.; Koidl, P.
Zeitschriftenaufsatz
1994ODMR studies of MOVPE-grown GaN epitaxial layers.
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J.; Herres, N.; Akasaki, I.; Amano, H.
Zeitschriftenaufsatz
1994Oriented CVD diamond films - twin formation, structure and morphology.
Wild, C.; Kohl, R.; Herres, N.; Müller-Sebert, W.; Koidl, P.
Zeitschriftenaufsatz
1994Resonant Raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces
Behr, D.; Wagner, J.; Schmitz, J.; Herres, N.; Ralston, J.D.; Koidl, P.; Ramsteiner, M.; Schrottke, L.; Jungk, G.
Zeitschriftenaufsatz
1994Structure and morphology of oriented diamond films.
Koidl, P.; Wild, C.; Herres, N.
Konferenzbeitrag
1993Chemical vapour deposition and characterization of smooth -100-faceted diamond films.
Wild, C.; Koidl, P.; Müller-Sebert, W.; Walcher, H.; Kohl, R.; Herres, N.; Locher, R.; Samlenski, R.; Brenn, R.
Zeitschriftenaufsatz
1993Defect and strain redistribution in InxGa1-xAs/GaAs multiple quantum wells studied by resonant Raman scattering.
Larkins, E.C.; Herres, N.; Ralston, J.D.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1992Polycrystalline diamond for optical thin films
Müller-Sebert, W.; Wild, C.; Koidl, P.; Herres, N.; Eckermann, T.; Wagner, J.
Zeitschriftenaufsatz
1991Assessment of mismatched epitaxial layers by X-ray rocking curve measurements and simulations
Neumann, G.; Bender, G.; Herres, N.
Zeitschriftenaufsatz
1991Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices
Kuhn, S.; Evers, J.; Böttner, H.; Herres, N.; Lambrecht, A.; Spanger, B.; Tacke, M.
Zeitschriftenaufsatz
1991Textured growth and twinning in polycrystalline CVD diamond films
Müller-Sebert, W.; Eckermann, T.; Herres, N.; Koidl, P.; Wild, C.
Konferenzbeitrag
1990Elektrische und optische Eigenschaften von ErAs und ErAs/GaAs Vielfachschichten hergestellt mit MBE auf GaAs
Ralston, J.D.; Fuchs, F.; Hiesinger, P.; Schneider, J.; Herres, N.; Ennen, H.; Wennekers, P.
Konferenzbeitrag
1990Structural, electrical and optical characterization of single-crystal ErAs layers grown on GaAs by MBE.
Ralston, J.D.; Hiesinger, P.; Schneider, J.; Müller, H.D.; Rothemund, W.; Fuchs, F.; Schmälzlin, J.; Thonke, K.; Herres, N.; Ennen, H.; Wennekers, P.
Zeitschriftenaufsatz
1990Texture formation in polycrystalline diamond films.
Herres, N.; Koidl, P.; Wild, C.
Zeitschriftenaufsatz
1989Optical and structural characterization of CVD diamond
Herres, N.; Koidl, P.; Wagner, J.; Wild, C.
Konferenzbeitrag
1989Properties of sequentially sputtered tungsten silicide thin films
Pletschen, W.; Maier, M.; Herres, N.; Seelmann-Eggebert, M.; Wagner, J.
Zeitschriftenaufsatz
1988Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy.
Herres, N.; Richter, H.J.; Seelmann-Eggebert, M.; Smith, R.; Wennekers, P.
Zeitschriftenaufsatz