Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2014Electromigration void nucleation and growth analysis using large-scale early failure statistics
Hauschildt, Meike; Gall, Martin; Hennesthal, Christian; Talut, Georg; Aubel, Oliver; Yeap, Kong Boon; Zschech, Ehrenfried
Konferenzbeitrag
2013Electromigration early failure void nucleation and growth phenomena in Cu and Cu(Mn) interconnects
Hauschildt, M.; Hennesthal, C.; Talut, G.; Aubel, O.; Gall, M.; Yeap, K.B.; Zschech, E.
Konferenzbeitrag
2013An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures
Yeap, K.B.; Gall, M.; Sander, C.; Niese, S.; Liao, Z.; Ritz, Y.; Rosenkranz, R.; Mühle, U.; Gluch, J.; Zschech, E.; Aubel, O.; Beyer, A.; Hennesthal, C.; Hauschildt, M.; Talut, G.; Poppe, J.; Vogel, N.; Engelmann, H.-J.; Stauffer, D.; Major, R.; Warren, O.
Konferenzbeitrag
2012Analysis of grain structure by precession electron diffraction and effects on electromigration reliability of Cu interconnects
Cao, L.; Ganesh, K.J.; Zhang, L.; Aubel, O.; Hennesthal, C.; Zschech, E.; Ferreira, P.J.; Ho, P.S.
Konferenzbeitrag
2011Grain structure effect on electromigration reliability of Cu interconnects with CoWP capping
Zhang, L.J.; Ho, P.S.; Aubel, O.; Hennesthal, C.; Zschech, E.
Zeitschriftenaufsatz
2010Cap layer and grain size effects on electromigration reliability in Cu/low-k interconnects
Zhang, L.; Kraatz, M.; Aubel, O.; Hennesthal, C.; Im, J.; Zschech, E.; Ho, P.S.
Konferenzbeitrag
2010Effects of cap layer and grain structure on electromigration reliability of Cu/low-k interconnects for 45 nm technology node
Zhang, L.; Zhou, J.P.; Im, J.; Ho, P.S.; Aubel, O.; Hennesthal, C.; Zschech, E.
Konferenzbeitrag
2010Grain size and cap layer effects on electromigration reliability of Cu interconnects: Experiments and simulation
Zhang, L.; Kraatz, M.; Aubel, O.; Hennesthal, C.; Zschech, E.; Ho, P.S.
Konferenzbeitrag