| | |
|---|
| 2020 | InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates
Thome, Fabian; Heinz, Felix; Leuther, Arnulf | Zeitschriftenaufsatz |
| 2020 | Noise performance of Sub-100-nm metamorphic HEMT technologies
Heinz, Felix; Thome, Fabian; Leuther, Arnulf; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | 20-nm In₀.₈Ga₀.₂As MOSHEMT MMIC technology on silicon
Tessmann, Axel; Leuther, Arnulf; Heinz, Felix; Bernhardt, Frank; John, Laurenz; Massler, Hermann; Czornomaz, Lukas; Merkle, Thomas | Zeitschriftenaufsatz |
| 2019 | Highly scalable distributed high electron mobility transistor model
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | RF-noise model extraction procedure for distributed multiport models
Heinz, Felix; Schwantuschke, Dirk; Ohlrogge, Matthias; Leuther, Arnulf; Ambacher, Oliver | Konferenzbeitrag |
| 2019 | W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology
Thome, Fabian; Leuther, Arnulf; Heinz, Felix; Ambacher, Oliver | Konferenzbeitrag |
| 2018 | High gain 220 - 275 GHz amplifier MMICs based on metamorphic 20 nm InGaAs MOSFET technology
Tessmann, Axel; Leuther, Arnulf; Heinz, Felix; Bernhardt, Frank; Massler, Hermann | Konferenzbeitrag |
| 2018 | RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Tessmann, Axel; Ohlrogge, Matthias; Quay, Rüdiger; Ambacher, Oliver | Konferenzbeitrag |
| 2017 | Untersuchung des Hochfrequenzrauschens von InGaAs-Transistoren
Heinz, Felix
: Ambacher, Oliver (Referent); Schwantuschke, Dirk (Betreuer) | Master Thesis |